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1. 发明授权

US07442649B2 Etch with photoresist mask 失效
标题翻译：刻蚀光刻胶掩模
公开(公告)号：US07442649B2
公开(公告)日：2008-10-28
申请号：US11094559
申请日：2005-03-29
申请人： Jisoo Kim , Sangheon Lee , Binet A. Worsham , Robert Charatan , S.M. Reza Sadjadi
发明人： Jisoo Kim , Sangheon Lee , Binet A. Worsham , Robert Charatan , S.M. Reza Sadjadi
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/31116
摘要： A method for etching a dielectric layer over a substrate is provided. A photoresist mask is formed over the dielectric layer. The substrate is placed in a plasma processing chamber. An etchant gas comprising NF3 is provided into the plasma chamber. A plasma is formed from the NF3 gas. The dielectric layer is etched through the photoresist mask with the plasma from the NF3 gas.
摘要翻译：提供了一种在衬底上蚀刻电介质层的方法。在电介质层上形成光致抗蚀剂掩模。将基板放置在等离子体处理室中。包含NF 3 N的蚀刻剂气体被提供到等离子体室中。从NF 3 N气体形成等离子体。通过来自NF 3 N 3气体的等离子体通过光致抗蚀剂掩模蚀刻电介质层。

2. 发明授权

US07789991B1 Lag control 有权
标题翻译：滞后控制
公开(公告)号：US07789991B1
公开(公告)日：2010-09-07
申请号：US11810929
申请日：2007-06-07
申请人： Binet A. Worsham , Sean S. Kang , David Wei , Vinay Pohray , Bi Ming Yen
发明人： Binet A. Worsham , Sean S. Kang , David Wei , Vinay Pohray , Bi Ming Yen
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01L21/31116 , H01L21/31138
摘要： A method for etching features in a silicon oxide based dielectric layer over a substrate, comprising performing an etch cycle. A lag etch partially etching features in the silicon oxide based dielectric layer is performed, comprising providing a lag etchant gas, forming a plasma from the lag etchant gas, and etching the etch layer with the lag etchant gas, so that smaller features are etched slower than wider features. A reverse lag etch further etching the features in the silicon oxide based dielectric layer is performed comprising providing a reverse lag etchant gas, which is different from the lag etchant gas and is more polymerizing than the lag etchant gas, forming a plasma from the reverse lag etchant gas, and etching the silicon oxide based dielectric layer with the plasma formed from the reverse lag etchant gas, so that smaller features are etched faster than wider features.
摘要翻译：一种用于在衬底上蚀刻基于氧化硅的电介质层中的特征的方法，包括执行蚀刻循环。执行基于氧化硅的电介质层中部分蚀刻部分蚀刻特征的延迟蚀刻，包括提供滞后的蚀刻剂气体，从滞后的蚀刻剂气体形成等离子体，并用滞后的蚀刻剂气体蚀刻蚀刻层，使得较小的特征被蚀刻更慢比更广泛的功能。执行反向延迟蚀刻进一步蚀刻基于氧化硅的电介质层中的特征，其包括提供与滞后蚀刻剂气体不同的反向滞后蚀刻剂气体，并且比滞后蚀刻剂气体更聚合，从逆向滞后形成等离子体蚀刻气体，并用由反向滞后蚀刻剂气体形成的等离子体蚀刻基于氧化硅的电介质层，从而比较宽的特征蚀刻更小的特征。

3. 发明授权

US07307025B1 Lag control 有权
标题翻译：滞后控制
公开(公告)号：US07307025B1
公开(公告)日：2007-12-11
申请号：US11104733
申请日：2005-04-12
申请人： Binet A. Worsham , Sean S. Kang , David Wei , Vinay Pohray , Bi Ming Yen
发明人： Binet A. Worsham , Sean S. Kang , David Wei , Vinay Pohray , Bi Ming Yen
IPC分类号： H01L21/302
CPC分类号： H01L21/31116 , H01L21/31138
摘要： A method for etching features in a silicon oxide based dielectric layer over a substrate, comprising performing an etch cycle. A lag etch partially etching features in the silicon oxide based dielectric layer is performed, comprising providing a lag etchant gas, forming a plasma from the lag etchant gas, and etching the etch layer with the lag etchant gas, so that smaller features are etched slower than wider features. A reverse lag etch further etching the features in the silicon oxide based dielectric layer is performed comprising providing a reverse lag etchant gas, which is different from the lag etchant gas and is more polymerizing than the lag etchant gas, forming a plasma from the reverse lag etchant gas, and etching the silicon oxide based dielectric layer with the plasma formed from the reverse lag etchant gas, so that smaller features are etched faster than wider features.
摘要翻译：一种用于在衬底上蚀刻基于氧化硅的电介质层中的特征的方法，包括执行蚀刻循环。执行基于氧化硅的电介质层中部分蚀刻部分蚀刻特征的延迟蚀刻，包括提供滞后的蚀刻剂气体，从滞后的蚀刻剂气体形成等离子体，并用滞后的蚀刻剂气体蚀刻蚀刻层，使得较小的特征被蚀刻更慢比更广泛的功能。执行反向延迟蚀刻进一步蚀刻基于氧化硅的电介质层中的特征，其包括提供与滞后蚀刻剂气体不同的反向滞后蚀刻剂气体，并且比滞后蚀刻剂气体更聚合，从逆向滞后形成等离子体蚀刻气体，并用由反向滞后蚀刻剂气体形成的等离子体蚀刻基于氧化硅的电介质层，从而比较宽的特征蚀刻更小的特征。

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