专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06734099B2 System for preventing excess silicon consumption in ultra shallow junctions 有权
标题翻译：用于防止超浅结的多余硅消耗的系统
公开(公告)号：US06734099B2
公开(公告)日：2004-05-11
申请号：US10315499
申请日：2002-12-10
申请人： Jin Zhao , Jiong-Ping Lu , Yuqing Xu
发明人： Jin Zhao , Jiong-Ping Lu , Yuqing Xu
IPC分类号： H01L2144
CPC分类号： H01L21/324 , H01L21/28518 , H01L29/665
摘要： The present invention provides a system for preventing excess silicon consumption in a semiconductor wafer by depositing a metal layer (114) on top of a native oxide layer above a silicide layer (110) of the semiconductor wafer and then reducing the native oxide layer to form low resistance contacts. The native oxide layer is reduced using a rapid thermal annealing process within a temperature range to preserve the integrity of the silicide layer (110) and reduce excess silicon consumption. The temperature range can be greater than 350° C. and less than 615° C., but is optimal between 485° C. to 550° C.
摘要翻译：本发明提供了一种用于通过在半导体晶片的硅化物层（110）上方的自然氧化物层的顶部上沉积金属层（114）并且然后还原天然氧化物层形成来防止半导体晶片中多余的硅消耗的系统低电阻触点。在温度范围内使用快速热退火工艺来还原天然氧化物层以保持硅化物层（110）的完整性并减少多余的硅消耗。温度范围可以大于350℃且小于615℃，但在485℃至550℃之间是最佳的。

2. 发明授权

US06630394B2 System for reducing silicon-consumption through selective deposition 有权
标题翻译：通过选择性沉积降低硅消耗的系统
公开(公告)号：US06630394B2
公开(公告)日：2003-10-07
申请号：US10131162
申请日：2002-04-24
申请人： Jiong-Ping Lu , Jin Zhao , Yuqing Xu
发明人： Jiong-Ping Lu , Jin Zhao , Yuqing Xu
IPC分类号： H01L21336
CPC分类号： H01L29/41783 , H01L21/28518 , H01L29/665 , H01L29/7834
摘要： Disclosed is a system for fabricating a semiconductor device (100). A layer of cobalt (32) is deposited onto a silicon region (104, 106, 108) and annealed to form a cobalt silicide layer (118, 120, 122). Silicon layers (124, 126, 128) are selectively deposited onto the cobalt silicide layers (118, 120, 122). The semiconductor device (100) is annealed to form disilicide layers (130, 132, 134) from the cobalt silicide layers (118, 120, 122) and the silicon contained in silicon regions (104, 106, 108) and silicon layers (124, 126, 128).
摘要翻译：公开了一种用于制造半导体器件（100）的系统。一层钴（32）沉积在硅区（104,106,108）上并退火以形成硅化钴层（118,120,122）。硅层（124,126,128）被选择性地沉积在钴硅化物层（118,120,122）上。半导体器件（100）被退火以形成来自硅化钴层（118,120,122）的二硅化物层（130,132,134）和包含在硅区域（104,106,108）和硅层（124）中的硅，126,128）。

3. 发明授权

US09353197B2 Catalyst component for olefin polymerization and preparation method thereof 有权
标题翻译：烯烃聚合用催化剂组分及其制备方法
公开(公告)号：US09353197B2
公开(公告)日：2016-05-31
申请号：US13502508
申请日：2010-04-19
申请人： Xianzhi Xia , Jin Zhao , Yuexiang Liu , Jigui Zhang , Weili Li , Yang Tan , Suzhen Qiao , Renqi Peng , Ping Gao , Maoping Yin , Tianyi Zhang
发明人： Xianzhi Xia , Jin Zhao , Yuexiang Liu , Jigui Zhang , Weili Li , Yang Tan , Suzhen Qiao , Renqi Peng , Ping Gao , Maoping Yin , Tianyi Zhang
IPC分类号： C08F4/76 , C08F4/654 , C08F4/658 , C08F4/649 , C08F10/00 , C08F110/06
CPC分类号： C08F10/00 , C08F110/06 , Y02P20/52 , C08F4/6543 , C08F4/651
摘要： A catalyst component for olefin polymerization is disclosed, which comprises at least one diol ester type electron donor compound (a) and at least one diether type electron donor compound (b) among others, wherein the molar ratio of a to b is 0.55-50. A preparation method of the catalyst component, a catalyst comprising the catalyst component, and an olefin polymerization method using the catalyst which can especially be used for preparation of polypropylenes of low ash contents are also disclosed.
摘要翻译：公开了一种用于烯烃聚合的催化剂组分，其包含至少一种二醇酯型电子给体化合物（a）和至少一种二醚型电子给体化合物（b）等，其中a与b的摩尔比为0.55-50 。还公开了催化剂组分的制备方法，包含催化剂组分的催化剂和使用该催化剂的烯烃聚合方法，其可特别用于制备低灰分含量的聚丙烯。

4. 发明申请

US20130236512A1 NOVEL CELLULOSE ETHERS AND THEIR USE 有权
标题翻译：新颖的纤维素及其使用
公开(公告)号：US20130236512A1
公开(公告)日：2013-09-12
申请号：US13825697
申请日：2011-10-06
申请人： Roland Adden , Meinolf Brackhagen , Matthias Knarr , Jin Zhao
发明人： Roland Adden , Meinolf Brackhagen , Matthias Knarr , Jin Zhao
IPC分类号： C08B11/02
CPC分类号： C08B11/02 , A61J3/077 , A61K9/4816 , A61K9/4866 , A61K47/38 , C08B11/193 , C08L1/284
摘要： Cellulose ethers are described herein which are useful in capsules or in coatings for dosage forms. In these cellulose ethers the ether substituents are methyl groups, hydroxyalkyl groups, and optionally alkyl groups being different from methyl, the cellulose ether has an MS (hydroxyalkyl) of 0.05 to 1.00, and hydroxy groups of anhydroglucose units are substituted with methyl groups such that [s23/s26−0.2*MS(hydroxyalkyl)] is 0.35 or less, wherein s23 is the molar fraction of anhydroglucose units wherein only the two hydroxy groups in the 2- and 3-positions of the anhydroglucose unit are substituted with methyl groups and wherein s26 is the molar fraction of anhydroglucose units wherein only the two hydroxy groups in the 2- and 6-positions of the anhydroglucose unit are substituted with methyl groups.
摘要翻译：本文描述了纤维素醚，其可用于胶囊或用于剂型的包衣。在这些纤维素醚中，醚取代基是甲基，羟基烷基和任选的不同于甲基的烷基，纤维素醚具有0.05至1.00的MS（羟基烷基），脱水葡萄糖单元的羟基被甲基取代，使得 [s23 / s26-0.2 * MS（羟烷基）]为0.35以下，其中s23为脱水葡萄糖单元的摩尔分数，其中脱水葡萄糖单元的2-和3-位上的两个羟基仅被甲基取代，其中s26是脱水葡萄糖单元的摩尔分数，其中脱水葡萄糖单元的2-和6-位中的两个羟基仅被甲基取代。

5. 发明申请

US20120264590A1 CARRIER FOR OLEFIN POLYMERIZATION CATALYST, PREPARATION METHOD AND APPLICATION THEREOF 有权
标题翻译：烯烃聚合催化剂载体，其制备方法和应用
公开(公告)号：US20120264590A1
公开(公告)日：2012-10-18
申请号：US13501850
申请日：2010-10-18
申请人： Weili Li , Xianzhi Xia , Yuexiang Liu , Jigui Zhang , Suzhen Qiao , Jin Zhao , Ping Gao , Xinsheng Wang , Yang Tan , Zhihui Zhang , Linna Yang , Ruilin Duan , Renqi Peng
发明人： Weili Li , Xianzhi Xia , Yuexiang Liu , Jigui Zhang , Suzhen Qiao , Jin Zhao , Ping Gao , Xinsheng Wang , Yang Tan , Zhihui Zhang , Linna Yang , Ruilin Duan , Renqi Peng
IPC分类号： C08F4/02
CPC分类号： C08F10/00 , C07F3/003 , C08F110/06 , C08F2500/12 , C08F2500/24 , C08F4/651 , C08F4/6543 , C08F4/022
摘要： A spheric magnesium compound comprises a reaction product of at least the following components: (a) a magnesium halide having a formula of MgX2-nRn, wherein X is independently chloride or bromide, R is a C1-C14 alkyl, a C6-C14 aryl, a C1-C14 alkoxy, or a C6-C14 aryloxy, and n is 0 or 1; (b) an alcohol compound; and (c) an epoxy compound having a general formula (1), wherein R2 and R3 are independently hydrogen, a C1-C5 linear or branched alkyl, or a C1-C5 linear or branched haloalkyl. The magnesium compound has characteristic DSC curve and X-ray diffraction pattern, and can be used as a carrier for olefin polymerization catalyst. stereoregularity of polymer having high melt index, and low content of polymer fines.
摘要翻译：球形镁化合物包含至少以下组分的反应产物：（a）具有式MgX 2 -nRn的卤化镁，其中X独立地是氯或溴，R是C 1 -C 14烷基，C 6 -C 14芳基，C 1 -C 14烷氧基或C 6 -C 14芳氧基，n为0或1; （b）醇化合物; 和（c）具有通式（1）的环氧化合物，其中R2和R3独立地是氢，C1-C5直链或支链烷基或C1-C5直链或支链卤代烷基。镁化合物具有特征的DSC曲线和X射线衍射图，可用作烯烃聚合催化剂的载体。具有高熔体指数的聚合物的立构规整性和聚合物细粉的含量低。

6. 发明申请

US20120226004A1 CATALYST COMPONENT FOR OLEFIN POLYMERIZATION AND PREPARATION METHOD THEREOF 有权
标题翻译：用于烯烃聚合的催化剂组分及其制备方法
公开(公告)号：US20120226004A1
公开(公告)日：2012-09-06
申请号：US13502508
申请日：2010-04-19
申请人： Xianzhi Xia , Jin Zhao , Yuexiang Liu , Jigui Zhang , Weili Li , Yang Tan , Suzhen Qiao , Renqi Peng , Ping Gao , Maoping Yin , Tianyi Zhang
发明人： Xianzhi Xia , Jin Zhao , Yuexiang Liu , Jigui Zhang , Weili Li , Yang Tan , Suzhen Qiao , Renqi Peng , Ping Gao , Maoping Yin , Tianyi Zhang
IPC分类号： C08F4/76 , C08F4/654 , C08F4/658 , C08F4/649
CPC分类号： C08F10/00 , C08F110/06 , Y02P20/52 , C08F4/6543 , C08F4/651
摘要： A catalyst component for olefin polymerization is disclosed, which comprises at least one diol ester type electron donor compound (a) and at least one diether type electron donor compound (b) among others, wherein the molar ratio of a to b is 0.55-50. A preparation method of the catalyst component, a catalyst comprising the catalyst component, and an olefin polymerization method using the catalyst which can especially be used for preparation of polypropylenes of low ash contents are also disclosed.
摘要翻译：公开了一种用于烯烃聚合的催化剂组分，其包含至少一种二醇酯型电子给体化合物（a）和至少一种二醚型电子给体化合物（b）等，其中a与b的摩尔比为0.55-50 。还公开了催化剂组分的制备方法，包含催化剂组分的催化剂和使用该催化剂的烯烃聚合方法，其可特别用于制备低灰分含量的聚丙烯。

7. 发明申请

US20090258888A1 Pyrimidine Derivatives 审中-公开
标题翻译：嘧啶衍生物
公开(公告)号：US20090258888A1
公开(公告)日：2009-10-15
申请号：US11918016
申请日：2006-04-07
申请人： Dhanapalan Nagarathnam , Yuanwei Chen , Wenlang Fu , Donald Bierer , Ming Wang , Michael Brands , Yamin Wang , Brian R. Bear , Aaron Schmitt , Eric Mull , David Miller , Jin Zhao
发明人： Dhanapalan Nagarathnam , Yuanwei Chen , Wenlang Fu , Donald Bierer , Ming Wang , Michael Brands , Yamin Wang , Brian R. Bear , Aaron Schmitt , Eric Mull , David Miller , Jin Zhao
IPC分类号： A61K31/506 , C07D239/46 , A61P35/00
CPC分类号： C07D401/12
摘要： This invention relates to novel compounds and processes for their preparation, methods of treating diseases, particularly cancer, comprising administering said compounds, and methods of making pharmaceutical compositions for the treatment or prevention of disorders, particularly cancer.
摘要翻译：本发明涉及新化合物及其制备方法，治疗疾病，特别是癌症的方法，包括给药所述化合物，以及制备用于治疗或预防病症，特别是癌症的药物组合物的方法。

8. 发明申请

US20080076227A1 METHOD FOR FORMING A PRE-METAL DIELECTRIC LAYER USING AN ENERGY BEAM TREATMENT 审中-公开
标题翻译：使用能量束处理形成预金属介电层的方法
公开(公告)号：US20080076227A1
公开(公告)日：2008-03-27
申请号：US11533795
申请日：2006-09-21
申请人： Puneet Kohli , Manoj Mehrotra , Jin Zhao , Sameer Ajmera
发明人： Puneet Kohli , Manoj Mehrotra , Jin Zhao , Sameer Ajmera
IPC分类号： H01L21/336
CPC分类号： H01L29/6656 , H01L21/2686 , H01L21/76224 , H01L21/76825 , H01L29/6659 , H01L29/7843
摘要： The present invention provides a method for manufacturing a semiconductor device. The method for manufacturing the semiconductor device includes, among other steps, forming a gate structure over a substrate, the gate structure having source/drain regions proximate thereto and in, on or over the substrate, forming a pre-metal dielectric layer over the gate structure and source/drain regions, and subjecting the pre-metal dielectric layer to an energy beam treatment, the energy beam treatment configured to change a stress of the pre-metal dielectric layer, and thus change a stress in the substrate therebelow.
摘要翻译：本发明提供一种制造半导体器件的方法。除了其他步骤之外，用于制造半导体器件的方法包括在衬底上形成栅极结构，栅极结构具有靠近其的源极/漏极区域，并且在衬底上，衬底上或上方，在栅极上形成预金属电介质层结构和源极/漏极区域，并且对金属前介电层进行能量束处理，所述能量束处理被配置为改变预金属介电层的应力，从而改变其下的衬底中的应力。

9. 发明授权

US06998275B2 Hydrogen-less CVD TiN process for FeRAM VIA0 barrier application 有权
标题翻译：用于FeRAM VIA0屏障应用的无氢CVD TiN工艺
公开(公告)号：US06998275B2
公开(公告)日：2006-02-14
申请号：US10410091
申请日：2003-04-09
申请人： Jin Zhao , M. Grant Albrecht , Qidu Jiang , Linlin Chen
发明人： Jin Zhao , M. Grant Albrecht , Qidu Jiang , Linlin Chen
IPC分类号： H01L21/20 , H01L21/44 , H01L21/26 , H01L21/00
CPC分类号： H01L28/75 , C23C16/34 , C23C16/56 , H01L21/28568
摘要： The present invention is directed to a method of forming a diffusion barrier layer for a FeRAM capacitor, which includes depositing a chemical vapor deposited titanium nitride layer in a via, and treating the chemical vapor deposited titanium nitride layer using a plasma treatment substantially excluding hydrogen.
摘要翻译：本发明涉及一种形成用于FeRAM电容器的扩散阻挡层的方法，其包括在通孔中沉积化学气相沉积的氮化钛层，以及使用基本上不含氢气的等离子体处理来处理化学气相沉积的氮化钛层。

10. 发明申请

US20050274955A1 Bi-layer etch stop process for defect reduction and via stress migration improvement 有权
标题翻译：用于缺陷减少和经过应力迁移改善的双层蚀刻停止工艺
公开(公告)号：US20050274955A1
公开(公告)日：2005-12-15
申请号：US10857150
申请日：2004-05-28
申请人： Tae Kim , Jin Zhao , Nathan Kruse , August Fischer , Ralf Willecke
发明人： Tae Kim , Jin Zhao , Nathan Kruse , August Fischer , Ralf Willecke
IPC分类号： H01L21/30 , H01L21/768
CPC分类号： H01L21/76801 , H01L21/76822 , H01L21/76832
摘要： A method of forming a film stack in an integrated circuit, said method comprising depositing a layer of silicon carbide adjacent a first layer of dielectric material, depositing a layer of silicon nitride adjacent the layer of silicon carbide, and depositing a second layer of dielectric material adjacent the layer of silicon nitride.
摘要翻译：一种在集成电路中形成膜堆叠的方法，所述方法包括在第一绝缘材料层附近淀积一层碳化硅，在该碳化硅层附近沉积一层氮化硅，以及沉积第二层介电材料邻近氮化硅层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式