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    • 6. 发明申请
    • DEPOSITION TOOL CLEANING PROCESS HAVING A MOVING PLASMA ZONE
    • 具有移动等离子体区域的沉积工具清洁工艺
    • US20060254515A1
    • 2006-11-16
    • US11459819
    • 2006-07-25
    • Ignacio BlancoJin ZhaoNathan Kruse
    • Ignacio BlancoJin ZhaoNathan Kruse
    • C23C16/00H01L21/306
    • H01J37/32082B08B7/0035C23C16/4405H01J2237/335Y10S438/905
    • The present invention provides, in one embodiment, a process for cleaning a deposition chamber (100). The process includes a step (100) of forming a reactive plasma cleaning zone by dissociating a gaseous fluorocompound introduced into a deposition chamber having an interior surface and in a presence of a plasma. The process (100) further includes a step (120) of ramping a flow rate of said gaseous fluorocompound to move the reactive plasma cleaning zone throughout the deposition chamber, thereby preventing a build-up of localized metal compound deposits on the interior surface. Other embodiments advantageously incorporate the process (100) into a system (200) for cleaning a deposition chamber (205) and a method of manufacturing semiconductor devices (300).
    • 在一个实施例中,本发明提供了一种用于清洁沉积室(100)的方法。 该方法包括通过使引入到具有内表面并且存在等离子体的沉积室中的气态氟化合物离解形成反应性等离子体清洗区的步骤(100)。 方法(100)还包括使所述气体氟化合物的流速升高以使整个沉积室中的反应性等离子体清洗区域移动的步骤(120),从而防止局部金属化合物沉积在内表面上。 其他实施例有利地将工艺(100)并入到用于清洁沉积室(205)的系统(200)和制造半导体器件(300)的方法中。
    • 7. 发明授权
    • Method of manufacturing semiconductor devices comprising a deposition tool cleaning process having a moving plasma zone
    • 包括具有移动等离子体区域的沉积工具清洁工艺的半导体器件的制造方法
    • US07112546B2
    • 2006-09-26
    • US10653661
    • 2003-09-02
    • Ignacio BlancoJin ZhaoNathan Kruse
    • Ignacio BlancoJin ZhaoNathan Kruse
    • B08B9/00B08B7/00H01L21/31H01L21/469
    • H01J37/32082B08B7/0035C23C16/4405H01J2237/335Y10S438/905
    • The present invention provides, in one embodiment, a method of manufacturing semiconductor devices. The method comprises transferring one or more substrate into a deposition chamber and depositing material layers on the substrate. The chamber has an interior surface. The method further includes, between the transfers, cleaning the deposition chamber using an in situ ramped cleaning process when material layer deposits in the deposition chamber reaches a predefined thickness. The in situ ramped cleaning process comprises forming a reactive plasma cleaning zone by dissociating a gaseous fluorocompound introduced into a deposition chamber in a presence of a plasma. The cleaning process further includes ramping a flow rate of the gaseous fluorocompound in a presence of the plasma to move the reactive plasma cleaning zone throughout the deposition chamber, thereby preventing a build-up of localized metal compound deposits on the interior surface.
    • 本发明在一个实施例中提供一种制造半导体器件的方法。 该方法包括将一个或多个衬底转移到沉积室中并在衬底上沉积材料层。 该室具有内表面。 所述方法还包括在所述转移之间,当所述沉积室中的材料层沉积达到预定厚度时,使用原位斜面清洁过程清洁所述沉积室。 原位斜化清洗工艺包括通过在存在等离子体的情况下将引入到沉积室中的气态氟化合物解离来形成反应性等离子体清洗区。 清洁过程还包括在存在等离子体的情况下使气态氟化合物的流速升高,以使整个沉积室中的反应性等离子体清洗区域移动,从而防止局部金属化合物沉积在内表面上。
    • 8. 发明申请
    • Calcium supplement
    • 钙补充剂
    • US20060165784A1
    • 2006-07-27
    • US11081780
    • 2005-03-17
    • Jin Zhao
    • Jin Zhao
    • A61K9/20A61K33/10
    • A61K9/2072A61K33/06A61K33/10A61K33/14A61K2300/00
    • A dissoluble oral tablet of calcium supplement and the method of making the product are provided. This calcium supplement comprises an exposure area and a coating covered area. The surface ratio between the exposure area and the coating covered area is about 1:1 to 1:12. The exposure area can be a hole, an opening, or their combination. The preferred samples contain about CaCO3 200-600 mg with MgCL2 50-150 mg or MgSO4 50-100 mg. The favorable CaCO3 tablet reaction with stomach acid is: CaCO3+2HCL=CaCL2+H2CO3=Ca+++2CL−+H2O+CO2 ↑. The CO2 is the natural bubble broker. The stomach HCL is the natural CaCL2 maker.
    • 提供钙补充剂的可溶性口服片剂和制备该产品的方法。 该钙补充剂包括曝光区域和涂覆覆盖区域。 曝光面积和涂层覆盖面积之间的表面比为约1:1至1:12。 曝光区域可以是孔,开口或它们的组合。 优选的样品含有约200-600mg的CaCO 3,MgCl 2为50-150mg或MgSO 4为50-100mg。 与胃酸有利的CaCO3片剂反应为:CaCO3 + 2HCL = CaCL2 + H2CO3 = Ca ++ + 2CL + + H2O + CO2↑。 二氧化碳是天然气泡沫经纪人。 胃HCL是天然CaCL2制造商。