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1. 发明授权

US08839670B2 Anchor-tilt cancelling accelerometer 有权
标题翻译：锚定倾斜消除加速度计
公开(公告)号：US08839670B2
公开(公告)日：2014-09-23
申请号：US13249902
申请日：2011-09-30
申请人： Jin Qiu , Joe Seeger , Alexander Castro , Igor Tchertkov , Richard Li
发明人： Jin Qiu , Joe Seeger , Alexander Castro , Igor Tchertkov , Richard Li
IPC分类号： G01P15/125 , G01P21/00
CPC分类号： G01P15/125 , G01P15/02 , G01P21/00
摘要： Described herein is an accelerometer that can be sensitive to acceleration, but not anchor motion due to sources other than acceleration. The accelerometer can employ a set of electrodes and/or transducers that can register motion of the proof mass and support structure and employ and output-cancelling mechanism so that the accelerometer can distinguish between acceleration and anchor motion due to sources other than acceleration. For example, the effects of anchor motion can be cancelled from an output signal of the accelerometer so that the accelerometer exhibits sensitivity to only acceleration.
摘要翻译：这里描述的是加速度计，其可以对加速度敏感，但是不是由于加速度以外的源而是锚定运动。加速度计可以使用一组电极和/或换能器，其可以记录检测质量块和支撑结构的运动并采用和输出消除机构，使得加速度计能够区分由加速度以外的源而导致的加速度和锚运动。例如，可以从加速度计的输出信号中消除锚定运动的影响，使得加速度计仅对加速度表现出灵敏度。

2. 发明申请

US20120125104A1 ANCHOR-TILT CANCELLING ACCELEROMETER 有权
标题翻译：锚固器取消加速度计
公开(公告)号：US20120125104A1
公开(公告)日：2012-05-24
申请号：US13249902
申请日：2011-09-30
申请人： Jin Qiu , Joe Seeger , Alexander Castro , Igor Tchertkov , Richard Li
发明人： Jin Qiu , Joe Seeger , Alexander Castro , Igor Tchertkov , Richard Li
IPC分类号： G01P15/125 , G01P15/00
CPC分类号： G01P15/125 , G01P15/02 , G01P21/00
摘要： Described herein is an accelerometer that can be sensitive to acceleration, but not anchor motion due to sources other than acceleration. The accelerometer can employ a set of electrodes and/or transducers that can register motion of the proof mass and support structure and employ and output-cancelling mechanism so that the accelerometer can distinguish between acceleration and anchor motion due to sources other than acceleration. For example, the effects of anchor motion can be cancelled from an output signal of the accelerometer so that the accelerometer exhibits sensitivity to only acceleration.
摘要翻译：这里描述的是加速度计，其可以对加速度敏感，但是不是由于加速度以外的源而是锚定运动。加速度计可以使用一组电极和/或换能器，其可以记录检测质量块和支撑结构的运动并采用和输出消除机构，使得加速度计能够区分由加速度以外的源而导致的加速度和锚运动。例如，可以从加速度计的输出信号中消除锚定运动的影响，使得加速度计仅对加速度表现出灵敏度。

3. 发明授权

US08367451B2 Method and structures for fabricating MEMS devices on compliant layers 有权
标题翻译：在柔性层上制造MEMS器件的方法和结构
公开(公告)号：US08367451B2
公开(公告)日：2013-02-05
申请号：US12178563
申请日：2008-07-23
申请人： Jin Qiu
发明人： Jin Qiu
IPC分类号： H01L21/00
CPC分类号： B81C1/00095 , B81B3/0072 , B81C2203/0728 , B81C2203/0771
摘要： Methods and structures for fabricating MEMS devices on compliant layers are provided. In particular, disclosed are methods and structures that can include the use of a sacrificial layer composed of a material having material properties relative to one or more other layers. These methods and structures can reduce final device shape sensitivity to process parameters, deposition temperature differences, specific material, time, and/or geometry. Further, such methods and structures can improve the final as-built shape of released devices, reduce variability in the as-built shape, eliminate decoupling of the deposited layers from the substrate, and reduce variability across a product array, die, or wafer.
摘要翻译：提供了在兼容层上制造MEMS器件的方法和结构。特别地，公开了可以包括使用由具有相对于一个或多个其它层的材料性质的材料构成的牺牲层的方法和结构。这些方法和结构可以减少对工艺参数，沉积温度差，特定材料，时间和/或几何形状的最终器件形状敏感性。此外，这样的方法和结构可以改善释放装置的最终构造形状，减少所构造的形状的可变性，消除沉积的层与衬底的去耦合，并且减少跨越产品阵列，管芯或晶片的可变性。

4. 发明授权

US07244970B2 Low capacitance two-terminal barrier controlled TVS diodes 有权
标题翻译：低电容两端势垒控制TVS二极管
公开(公告)号：US07244970B2
公开(公告)日：2007-07-17
申请号：US11020507
申请日：2004-12-22
申请人： Adrian I. Cogan , Jin Qiu , Richard A. Blanchard
发明人： Adrian I. Cogan , Jin Qiu , Richard A. Blanchard
IPC分类号： H01L29/72
CPC分类号： H01L29/66136 , H01L27/0255 , H01L29/861
摘要： A two-terminal barrier controlled TVS diode has a depletion region barrier blocking majority carrier flow through the channel region at the vicinity of the cathode region at bias levels below the predetermined clamping voltage applied between the anode electrode and the cathode electrode, and may be arranged such that the anode region provides conductivity modulation by injecting minority carriers into the channel region during conduction of the semiconductor structure. In presently preferred form the majority carriers are electrons and the minority carriers are holes. Fabrication methods are described.
摘要翻译：两端势垒控制TVS二极管具有消耗区域阻挡阻挡多数载流子流过阴极区附近的沟道区域，该偏压电平低于施加在阳极电极和阴极电极之间的预定钳位电压的偏置电平，并且可布置使得阳极区域在半导体结构的导通期间通过将少数载流子注入沟道区域来提供导电性调制。在目前优选的形式中，多数载流子是电子，而少数载流子是空穴。描述制造方法。

5. 外观设计

USD975334S1 Wall lamp 有权
公开(公告)号：USD975334S1
公开(公告)日：2023-01-10
申请号：US29775277
申请日：2021-03-22
申请人： Jin Qiu
设计人： Jin Qiu

6. 发明申请

US20090134513A1 METHOD AND STRUCTURES FOR FABRICATING MEMS DEVICES ON COMPLIANT LAYERS 有权
标题翻译：用于在合适层上制造MEMS器件的方法和结构
公开(公告)号：US20090134513A1
公开(公告)日：2009-05-28
申请号：US12178563
申请日：2008-07-23
申请人： Jin Qiu
发明人： Jin Qiu
IPC分类号： H01L23/48 , H01L21/46
CPC分类号： B81C1/00095 , B81B3/0072 , B81C2203/0728 , B81C2203/0771
摘要： Methods and structures for fabricating MEMS devices on compliant layers are provided. In particular, disclosed are methods and structures that can include the use of a sacrificial layer composed of a material having material properties relative to one or more other layers. These methods and structures can reduce final device shape sensitivity to process parameters, deposition temperature differences, specific material, time, and/or geometry. Further, such methods and structures can improve the final as-built shape of released devices, reduce variability in the as-built shape, eliminate decoupling of the deposited layers from the substrate, and reduce variability across a product array, die, or wafer.
摘要翻译：提供了在兼容层上制造MEMS器件的方法和结构。特别地，公开了可以包括使用由具有相对于一个或多个其它层的材料性质的材料构成的牺牲层的方法和结构。这些方法和结构可以减少对工艺参数，沉积温度差，特定材料，时间和/或几何形状的最终器件形状敏感性。此外，这样的方法和结构可以改善释放装置的最终构造形状，减少所构造的形状的可变性，消除沉积的层与衬底的去耦合，并且减少跨越产品阵列，管芯或晶片的可变性。

7. 发明授权

US08606937B2 Information providing method, home gateway, and home network system 有权
标题翻译：信息提供方式，家庭网关和家庭网络系统
公开(公告)号：US08606937B2
公开(公告)日：2013-12-10
申请号：US13338498
申请日：2011-12-28
申请人： Guofeng Qian , Shuxiang Wang , Zhiwang Zhao , Huihuang Chen , Jin Qiu , Lei Zhang
发明人： Guofeng Qian , Shuxiang Wang , Zhiwang Zhao , Huihuang Chen , Jin Qiu , Lei Zhang
IPC分类号： G06F15/16
CPC分类号： H04L65/1036 , H04L12/2874 , H04L12/2898 , H04L41/5022 , H04L61/20 , H04L61/2015 , H04L61/6059
摘要： Embodiments of the present invention provide an information providing method, a home gateway, and a home network system. The method includes: obtaining an IPv6 address or an IPv6 prefix of a client and a service type of the client; establishing a mapping between the IPv6 address or the IPv6 prefix of the client and the service type of the client; sending the mapping between the IPv6 address or the IPv6 prefix of the client and the service type of the client to a Broadband Remote Access Server (BRAS), so that the BRAS dispatches and manages a service of the client according to the mapping between the IPv6 address or the IPv6 prefix of the client and the service type of the client.
摘要翻译：本发明的实施例提供了一种信息提供方法，家庭网关和家庭网络系统。该方法包括：获取客户端的IPv6地址或IPv6前缀以及客户端的服务类型; 建立客户端的IPv6地址或IPv6前缀与客户端的服务类型之间的映射关系; 将客户端的IPv6地址或IPv6前缀与客户端的服务类型之间的映射发送给宽带远程访问服务器（BRAS），以便BRAS根据IPv6的映射方式对客户端的业务进行调度和管理地址或客户端的IPv6前缀和客户端的服务类型。

8. 发明申请

US20120102213A1 INFORMATION PROVIDING METHOD, HOME GATEWAY, AND HOME NETWORK SYSTEM 有权
标题翻译：信息提供方法，家庭网关和家庭网络系统
公开(公告)号：US20120102213A1
公开(公告)日：2012-04-26
申请号：US13338498
申请日：2011-12-28
申请人： Guofeng QIAN , Shuxiang Wang , Zhiwang Zhao , Huihuang Chen , Jin Qiu , Lei Zhang
发明人： Guofeng QIAN , Shuxiang Wang , Zhiwang Zhao , Huihuang Chen , Jin Qiu , Lei Zhang
IPC分类号： G06F15/16
CPC分类号： H04L65/1036 , H04L12/2874 , H04L12/2898 , H04L41/5022 , H04L61/20 , H04L61/2015 , H04L61/6059
摘要： Embodiments of the present invention provide an information providing method, a home gateway, and a home network system. The method includes: obtaining an IPv6 address or an IPv6 prefix of a client and a service type of the client; establishing a mapping between the IPv6 address or the IPv6 prefix of the client and the service type of the client; sending the mapping between the IPv6 address or the IPv6 prefix of the client and the service type of the client to a Broadband Remote Access Server (BRAS), so that the BRAS dispatches and manages a service of the client according to the mapping between the IPv6 address or the IPv6 prefix of the client and the service type of the client.
摘要翻译：本发明的实施例提供了一种信息提供方法，家庭网关和家庭网络系统。该方法包括：获取客户端的IPv6地址或IPv6前缀以及客户端的服务类型; 建立客户端的IPv6地址或IPv6前缀与客户端的服务类型之间的映射关系; 将客户端的IPv6地址或IPv6前缀与客户端的服务类型之间的映射发送给宽带远程访问服务器（BRAS），以便BRAS根据IPv6的映射方式对客户端的业务进行调度和管理地址或客户端的IPv6前缀和客户端的服务类型。

9. 发明授权

US07544544B2 Low capacitance two-terminal barrier controlled TVS diodes 有权
标题翻译：低电容两端势垒控制TVS二极管
公开(公告)号：US07544544B2
公开(公告)日：2009-06-09
申请号：US11879424
申请日：2007-07-17
申请人： Adrian I. Cogan , Jin Qiu , Richard A. Blanchard
发明人： Adrian I. Cogan , Jin Qiu , Richard A. Blanchard
IPC分类号： H01L21/332
CPC分类号： H01L29/66136 , H01L27/0255 , H01L29/861
摘要： A two-terminal barrier controlled TVS diode has a depletion region barrier blocking majority carrier flow through the channel region at the vicinity of the cathode region at bias levels below the predetermined clamping voltage applied between the anode electrode and the cathode electrode, and may be arranged such that the anode region provides conductivity modulation by injecting minority carriers into the channel region during conduction of the semiconductor structure. In presently preferred form the majority carriers are electrons and the minority carriers are holes. Fabrication methods are described.
摘要翻译：两端势垒控制TVS二极管具有消耗区域阻挡阻挡多数载流子流过阴极区附近的沟道区域，该偏压电平低于施加在阳极电极和阴极电极之间的预定钳位电压的偏置电平，并且可布置使得阳极区域在半导体结构的导通期间通过将少数载流子注入沟道区域来提供导电性调制。在目前优选的形式中，多数载流子是电子，而少数载流子是空穴。描述制造方法。

10. 发明申请

US20080032462A1 Low capacitance two-terminal barrier controlled TVS diodes 有权
标题翻译：低电容两端势垒控制TVS二极管
公开(公告)号：US20080032462A1
公开(公告)日：2008-02-07
申请号：US11879424
申请日：2007-07-17
申请人： Adrian Cogan , Jin Qiu , Richard Blanchard
发明人： Adrian Cogan , Jin Qiu , Richard Blanchard
IPC分类号： H01L21/329
CPC分类号： H01L29/66136 , H01L27/0255 , H01L29/861
摘要： A two-terminal barrier controlled TVS diode has a depletion region barrier blocking majority carrier flow through the channel region at the vicinity of the cathode region at bias levels below the predetermined clamping voltage applied between the anode electrode and the cathode electrode, and may be arranged such that the anode region provides conductivity modulation by injecting minority carriers into the channel region during conduction of the semiconductor structure. In presently preferred form the majority carriers are electrons and the minority carriers are holes. Fabrication methods are described.
摘要翻译：两端势垒控制TVS二极管具有消耗区域阻挡阻挡多数载流子流过阴极区附近的沟道区域，该偏压电平低于施加在阳极电极和阴极电极之间的预定钳位电压的偏置电平，并且可布置使得阳极区域在半导体结构的导通期间通过将少数载流子注入沟道区域来提供导电性调制。在目前优选的形式中，多数载流子是电子，而少数载流子是空穴。描述制造方法。

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