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1. 发明授权

US07572645B2 Magnetic tunnel junction structure and method 失效
标题翻译：磁隧道结结构及方法
公开(公告)号：US07572645B2
公开(公告)日：2009-08-11
申请号：US11601129
申请日：2006-11-15
申请人： Jijun Sun , Renu W. Dave , Jason A. Janesky , Jon M. Slaughter
发明人： Jijun Sun , Renu W. Dave , Jason A. Janesky , Jon M. Slaughter
IPC分类号： H01L29/76
CPC分类号： G01R33/093 , B82Y25/00 , B82Y40/00 , G01R33/098 , G11C11/16 , H01F10/3254 , H01F10/3272 , H01F41/302 , H01L43/08
摘要： Methods and apparatus are provided for magnetic tunnel junctions (MTJs) (10, 50) employing synthetic antiferromagnet (SAF) free layers (14, 14′). The MTJ (10, 50) comprises a pinned ferromagnetic (FM) layer (32, 18), the SAF (14) and a tunneling barrier (16) therebetween. The SAF (14) has a first higher spin polarization FM layer (30) proximate the tunneling barrier (16) and a second FM layer (26) desirably separated from the first FM layer (30) by a coupling layer (28), with magnetostriction adapted to compensate the magnetostriction of the first FM layer (30). Such compensation reduces the net magnetostriction of the SAF (14) to near zero even with high spin polarization proximate the tunneling barrier (16). Higher magnetoresistance ratios (MRs) are obtained without adverse affect on other MTJ (10, 50) properties. NiFe combinations are desirable for the first (30) and second (26) free FM layers, with more Fe in the first (30) free layer and less Fe in the second (26) free layer. CoFeB and NiFeCo are also useful in the free layers.
摘要翻译：提供了使用合成反铁磁（SAF）自由层（14,14'）的磁隧道结（MTJ）（10,50）的方法和装置。 MTJ（10,50）包括钉扎铁磁（FM）层（32,18），SAF（14）和它们之间的隧道势垒（16）。 SAF（14）具有靠近隧道势垒（16）的第一高自旋极化FM层（30）和期望地通过耦合层（28）从第一FM层（30）分离的第二FM层（26），其中，磁致伸缩适于补偿第一FM层（30）的磁致伸缩。即使在靠近隧道势垒（16）的高自旋极化下，这种补偿也将SAF（14）的净磁致伸缩降低到接近于零。获得更高的磁阻比（MRs），而不影响其他MTJ（10,50）性能。对于第一（30）和第二（26）自由的FM层，NiFe组合是理想的，在第一（30）自由层中具有更多的Fe，在第二（26）自由层中具有更少的Fe。 CoFeB和NiFeCo也可用于自由层。

2. 发明申请

US20080113220A1 Magnetic tunnel junction structure and method 失效
标题翻译：磁隧道结结构及方法
公开(公告)号：US20080113220A1
公开(公告)日：2008-05-15
申请号：US11601129
申请日：2006-11-15
申请人： Jijun Sun , Renu W. Dave , Jason A. Janesky , Jon M. Slaughter
发明人： Jijun Sun , Renu W. Dave , Jason A. Janesky , Jon M. Slaughter
IPC分类号： G11B5/33 , B05D5/12
CPC分类号： G01R33/093 , B82Y25/00 , B82Y40/00 , G01R33/098 , G11C11/16 , H01F10/3254 , H01F10/3272 , H01F41/302 , H01L43/08
摘要： Methods and apparatus are provided for magnetic tunnel junctions (MTJs) (10, 50) employing synthetic antiferromagnet (SAF) free layers (14, 14′). The MTJ (10, 50) comprises a pinned ferromagnetic (FM) layer (32, 18), the SAF (14) and a tunneling barrier (16) therebetween. The SAF (14) has a first higher spin polarization FM layer (30) proximate the tunneling barrier (16) and a second FM layer (26) desirably separated from the first FM layer (30) by a coupling layer (28), with magnetostriction adapted to compensate the magnetostriction of the first FM layer (30). Such compensation reduces the net magnetostriction of the SAF (14) to near zero even with high spin polarization proximate the tunneling barrier (16). Higher magnetoresistance ratios (MRs) are obtained without adverse affect on other MTJ (10, 50) properties. NiFe combinations are desirable for the first (30) and second (26) free FM layers, with more Fe in the first (30) free layer and less Fe in the second (26) free layer. CoFeB and NiFeCo are also useful in the free layers.
摘要翻译：提供了使用合成反铁磁（SAF）自由层（14,14'）的磁隧道结（MTJ）（10,50）的方法和装置。 MTJ（10,50）包括钉扎铁磁（FM）层（32,18），SAF（14）和它们之间的隧道势垒（16）。 SAF（14）具有靠近隧道势垒（16）的第一高自旋极化FM层（30）和期望地通过耦合层（28）从第一FM层（30）分离的第二FM层（26），其中，磁致伸缩适于补偿第一FM层（30）的磁致伸缩。即使在靠近隧道势垒（16）的高自旋极化下，这种补偿也将SAF（14）的净磁致伸缩降低到接近于零。获得更高的磁阻比（MRs），而不影响其他MTJ（10,50）性能。对于第一（30）和第二（26）自由的FM层，NiFe组合是理想的，在第一（30）自由层中具有更多的Fe，在第二（26）自由层中具有更少的Fe。 CoFeB和NiFeCo也可用于自由层。

3. 发明申请

US20070278547A1 MRAM synthetic anitferomagnet structure 有权
标题翻译： MRAM合成非铁磁结构
公开(公告)号：US20070278547A1
公开(公告)日：2007-12-06
申请号：US11444089
申请日：2006-05-31
申请人： Srinivas V. Pietambaram , Bengt J. Akerman , Renu W. Dave , Jason A. Janesky , Nicholas D. Rizzo , Jon M. Slaughter
发明人： Srinivas V. Pietambaram , Bengt J. Akerman , Renu W. Dave , Jason A. Janesky , Nicholas D. Rizzo , Jon M. Slaughter
IPC分类号： H01L29/94
CPC分类号： H01L43/08 , G11C11/161 , H01L27/222 , H01L43/02 , H01L43/10
摘要： An MRAM bit (10) includes a free magnetic region (15), a fixed magnetic region (17) comprising an antiferromagnetic material, and a tunneling barrier (16) comprising a dielectric layer positioned between the free magnetic region (15) and the fixed magnetic region (17). The MRAM bit (10) avoids a pinning layer by comprising a fixed magnetic region exhibiting a well-defined high Hflop using a combination of high Hk (uniaxial anisotropy), high Hsat (saturation field), and ideal soft magnetic properties exhibiting well-defined easy and hard axes.
摘要翻译： MRAM位（10）包括自由磁区（15），包括反铁磁材料的固定磁区（17）和隧道势垒（16），其包括位于自由磁区（15）和固定磁区（17）。 MRAM位（10）通过使用高H H k（单轴各向异性）的组合，包括表现出明确定义的高电平触发器的固定磁场来避免钉扎层，高饱和场（饱和磁场），理想的软磁特性表现出明确的容易和硬轴。

4. 发明授权

US08497538B2 MRAM synthetic antiferromagnet structure 有权
标题翻译： MRAM合成反铁磁结构
公开(公告)号：US08497538B2
公开(公告)日：2013-07-30
申请号：US11444089
申请日：2006-05-31
申请人： Srinivas V. Pietambaram , Bengt J. Akerman , Renu W. Dave , Jason A. Janesky , Nicholas D. Rizzo , Jon M. Slaughter
发明人： Srinivas V. Pietambaram , Bengt J. Akerman , Renu W. Dave , Jason A. Janesky , Nicholas D. Rizzo , Jon M. Slaughter
IPC分类号： H01L29/94
CPC分类号： H01L43/08 , G11C11/161 , H01L27/222 , H01L43/02 , H01L43/10
摘要： An MRAM bit (10) includes a free magnetic region (15), a fixed magnetic region (17) comprising an antiferromagnetic material, and a tunneling barrier (16) comprising a dielectric layer positioned between the free magnetic region (15) and the fixed magnetic region (17). The MRAM bit (10) avoids a pinning layer by comprising a fixed magnetic region exhibiting a well-defined high Hflop using a combination of high Hk (uniaxial anisotropy), high Hsat (saturation field), and ideal soft magnetic properties exhibiting well-defined easy and hard axes.
摘要翻译： MRAM位（10）包括自由磁区（15），包括反铁磁材料的固定磁区（17）和隧道势垒（16），其包括位于自由磁区（15）和固定磁区（17）。 MRAM位（10）通过使用高Hk（单轴各向异性），高Hsat（饱和磁场）和显示明确定义的理想软磁性质的组合，包括表现出明确的高Hflop的固定磁区，避免了钉扎层容易和坚硬的轴。

5. 发明授权

US07329935B2 Low power magnetoresistive random access memory elements 有权
公开(公告)号：US07329935B2
公开(公告)日：2008-02-12
申请号：US11581951
申请日：2006-10-16
申请人： Nicholas D. Rizzo , Renu W. Dave , Bradley N. Engel , Jason A. Janesky , JiJun Sun
发明人： Nicholas D. Rizzo , Renu W. Dave , Bradley N. Engel , Jason A. Janesky , JiJun Sun
IPC分类号： H01L29/82 , H01L43/00
CPC分类号： G11C11/16 , H01L27/222 , H01L43/08
摘要： Low power magnetoresistive random access memory elements and methods for fabricating the same are provided. In one embodiment, a magnetoresistive random access device has an array of memory elements. Each element comprises a fixed magnetic portion, a tunnel barrier portion, and a free SAF structure. The array has a finite magnetic field programming window Hwin represented by the equation Hwin≈(Hsat−σsat)−(Hsw+σsw), where Hsw is a mean switching field for the array, Hsat is a mean saturation field for the array, and Hsw for each memory element is represented by the equation HSW≅√{square root over (HkHSAT)}, where Hk represents a total anisotropy and HSAT represents an anti-ferromagnetic coupling saturation field for the free SAF structure of each memory element. N is an integer greater than or equal to 1. Hk, HSAT, and N for each memory element are selected such that the array requires current to operate that is below a predetermined current value.

6. 发明授权

US07129098B2 Reduced power magnetoresistive random access memory elements 有权
公开(公告)号：US07129098B2
公开(公告)日：2006-10-31
申请号：US10997118
申请日：2004-11-24
申请人： Nicholas D. Rizzo , Renu W. Dave , Bradley N. Engel , Jason A. Janesky , JiJun Sun
发明人： Nicholas D. Rizzo , Renu W. Dave , Bradley N. Engel , Jason A. Janesky , JiJun Sun
IPC分类号： H01L21/00
CPC分类号： G11C11/16 , H01L27/222 , H01L43/08
摘要： Low power magnetoresistive random access memory elements and methods for fabricating the same are provided. In one embodiment, a magnetoresistive random access device has an array of memory elements. Each element comprises a fixed magnetic portion, a tunnel barrier portion, and a free SAF structure. The array has a finite magnetic field programming window Hwin represented by the equation Hwin≈(Hsat−Nσsat)−(Hsw+Nσsw), where Hsw is a mean switching field for the array, Hsat is a mean saturation field for the array, and Hsw for each memory element is represented by the equation HSW≅√{square root over (HkHSAT)}, where Hk represents a total anisotropy and HSAT represents an anti-ferromagnetic coupling saturation field for the free SAF structure of each memory element. N is an integer greater than or equal to 1. Hk, HSAT, and N for each memory element are selected such that the array requires current to operate that is below a predetermined current value.

7. 发明授权

US07226796B2 Synthetic antiferromagnet structures for use in MTJs in MRAM technology 失效
标题翻译：在MRAM技术中用于MTJ的合成反铁磁体结构
公开(公告)号：US07226796B2
公开(公告)日：2007-06-05
申请号：US11182149
申请日：2005-07-15
申请人： Srinivas V. Pietambaram , Renu W. Dave , Jon M. Slaughter , Jijun Sun
发明人： Srinivas V. Pietambaram , Renu W. Dave , Jon M. Slaughter , Jijun Sun
IPC分类号： H01L21/00 , H01L29/76
CPC分类号： G11C11/16 , H01L43/08 , Y10T428/1121
摘要： A magnetic tunnel junction (MTJ), which is useful in magnetoresistive random access memories (MRAMs), has a free layer which is a synthetic antiferromagnet (SAF) structure. This SAF is composed of two ferromagnetic layers that are separated by a coupling layer. The coupling layer has a base material that is non-magnetic and also other materials that improve thermal endurance, control of the coupling strength of the SAF, and magnetoresistance ratio (MR). The preferred base material is ruthenium and the preferred other material is tantalum. Furthering these benefits, cobalt-iron is added at the interface between the tantalum and one of the ferromagnetic layers. Also the coupling layer can have even more layers and the materials used can vary. Also the coupling layer itself can be an alloy.
摘要翻译：在磁阻随机存取存储器（MRAM）中有用的磁隧道结（MTJ）具有作为合成反铁磁体（SAF）结构的自由层。该SAF由被耦合层隔开的两个铁磁层组成。耦合层具有非磁性的基体材料以及改善耐热性，SAF的耦合强度的控制和磁阻比（MR）的其它材料。优选的基材是钌，优选的其它材料是钽。进一步提高这些优点，在钽和铁磁层之一的界面处加入钴铁。此外，耦合层可以具有甚至更多的层，并且所使用的材料可以变化。耦合层本身也可以是合金。

8. 发明授权

US06946697B2 Synthetic antiferromagnet structures for use in MTJs in MRAM technology 有权
标题翻译：在MRAM技术中用于MTJ的合成反铁磁体结构
公开(公告)号：US06946697B2
公开(公告)日：2005-09-20
申请号：US10740338
申请日：2003-12-18
申请人： Srinivas V. Pietambaram , Renu W. Dave , Jon M. Slaughter , Jijun Sun
发明人： Srinivas V. Pietambaram , Renu W. Dave , Jon M. Slaughter , Jijun Sun
IPC分类号： G11C11/16 , H01L29/76 , H01L31/113 , H01L43/08
CPC分类号： G11C11/16 , H01L43/08 , Y10T428/1121
摘要： A magnetic tunnel junction (MTJ), which is useful in magnetoresistive random access memories (MRAMs), has a free layer which is a synthetic antiferromagnet (SAF) structure. This SAF is composed of two ferromagnetic layers that are separated by a coupling layer. The coupling layer has a base material that is non-magnetic and also other materials that improve thermal endurance, control of the coupling strength of the SAF, and magnetoresistance ratio (MR). The preferred base material is ruthenium and the preferred other material is tantalum. Furthering these benefits, cobalt-iron is added at the interface between the tantalum and one of the ferromagnetic layers. Also the coupling layer can have even more layers and the materials used can vary. Also the coupling layer itself can be an alloy.
摘要翻译：在磁阻随机存取存储器（MRAM）中有用的磁隧道结（MTJ）具有作为合成反铁磁体（SAF）结构的自由层。该SAF由两个被耦合层隔开的铁磁层组成。耦合层具有非磁性的基体材料以及改善耐热性，SAF的耦合强度的控制和磁阻比（MR）的其它材料。优选的基材是钌，优选的其它材料是钽。进一步提高这些优点，在钽和铁磁层之一的界面处加入钴铁。此外，耦合层可以具有甚至更多的层，并且所使用的材料可以变化。耦合层本身也可以是合金。

9. 发明授权

US06801415B2 Nanocrystalline layers for improved MRAM tunnel junctions 有权
公开(公告)号：US06801415B2
公开(公告)日：2004-10-05
申请号：US10232111
申请日：2002-08-30
申请人： Jon M. Slaughter , Renu W. Dave , Jijun Sun
发明人： Jon M. Slaughter , Renu W. Dave , Jijun Sun
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y40/00 , H01F10/3254 , H01F10/3268 , H01F10/3272 , H01F41/302 , Y10T29/49044
摘要： An improved and novel device and fabrication method for a magnetic element, and more particularly a magnetic element with a crystallographically disordered seed layer and/or template layer seeding the nanocrystalline growth of subsequent layers, including a pinning layer, a pinned layer, and fixed layer.

10. 发明授权

US07684161B2 Methods and apparatus for a synthetic anti-ferromagnet structure with reduced temperature dependence 有权
标题翻译：具有降低温度依赖性的合成反铁磁体结构的方法和装置
公开(公告)号：US07684161B2
公开(公告)日：2010-03-23
申请号：US11406566
申请日：2006-04-18
申请人： Srinivas V. Pietambaram , Renu W. Dave , Jon M. Slaughter , JiJun Sun
发明人： Srinivas V. Pietambaram , Renu W. Dave , Jon M. Slaughter , JiJun Sun
IPC分类号： G11B5/39 , G11B5/127
CPC分类号： B82Y25/00 , B82Y40/00 , G11B5/3906 , H01F10/3204 , H01F10/3254 , H01F10/3272 , H01F41/302 , H01L43/10 , Y10T428/1121 , Y10T428/1129 , Y10T428/1143 , Y10T428/1193
摘要： A synthetic antiferromagnet (SAF) structure includes a first ferromagnetic layer, a first insertion layer, a coupling layer, a second insertion layer, and a second ferromagnetic layer. The insertion layers comprise materials selected such that SAF exhibits reduced temperature dependence of antiferromagnetic coupling strength. The insertion layers may include CoFe or CoFeX alloys. The thickness of the insertion layers is selected such that they do not increase the uniaxial anisotropy or deteriorate any other properties.
摘要翻译：合成反铁磁体（SAF）结构包括第一铁磁层，第一插入层，耦合层，第二插入层和第二铁磁层。插入层包括选择的材料，使得SAF显示降低的反铁磁耦合强度的温度依赖性。插入层可以包括CoFe或CoFeX合金。选择插入层的厚度使得它们不增加单轴各向异性或劣化任何其它性质。

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