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    • 3. 发明授权
    • Methods and circuits for optimizing performance and power consumption in a design and circuit employing lower threshold voltage (LVT) devices
    • 用于在采用较低阈值电压(LVT)器件的设计和电路中优化性能和功耗的方法和电路
    • US08924902B2
    • 2014-12-30
    • US12683075
    • 2010-01-06
    • Lew G. Chua-Eoan
    • Lew G. Chua-Eoan
    • G06F17/50
    • G06F17/5068G06F17/5045G06F17/505G06F2217/78G06F2217/84
    • Methods and circuits for optimizing performance and power consumption in a circuit design and circuit employing one or more lower threshold voltage (Lvt) cells or devices are described. A base supply voltage amplitude is determined for providing operating power for the circuit. The base supply voltage amplitude is a low or lowest voltage level that still satisfies a performance specification for the circuit. Providing a low or lowest base supply voltage level reduces or minimizes the standby (i.e., non-switching) power consumption in the Lvt device(s) since current leakage is reduced as the supply voltage level is reduced. Reducing the supply voltage level used to power the Lvt device(s) also reduces active power consumption for the circuit as well. Thus, total power consumption is optimized or reduced while still receiving the benefit of using Lvt devices to optimize or increase performance of a circuit layout and circuit.
    • 描述了在采用一个或多个下阈值电压(Lvt)单元或设备的电路设计和电路中优化性能和功耗的方法和电路。 确定基本电源电压幅度以提供电路的工作功率。 基本电源电压幅度是仍然满足电路性能规格的低或最低电压电平。 提供低或最低基准电压电平降低或最小化Lvt装置中的待机(即非切换)功率消耗,因为随着电源电压电平的降低,电流泄漏减小。 降低用于为Lvt设备供电的电源电压也可以降低电路的有功功耗。 因此,总功耗被优化或降低,同时仍然受益于使用Lvt设备来优化或增加电路布局和电路的性能的益处。
    • 5. 发明申请
    • Low Voltage Temperature Sensor and use Thereof for Autonomous Multiprobe Measurement Device
    • 低电压温度传感器及其自动多点测量装置的使用
    • US20110234300A1
    • 2011-09-29
    • US12731455
    • 2010-03-25
    • Junmou ZhangLew G. Chua-Eoan
    • Junmou ZhangLew G. Chua-Eoan
    • G01K7/01
    • G01K7/01G01K2215/00G05F3/30
    • A bandgap sensor which measures temperatures within an integrated circuit is presented. The sensor may include a first transistor having an emitter node coupled in series to a first resistor and a first current source, wherein a PTAT current flows through the first resistor, and a second transistor having a base node coupled to a base node of the first transistor, and a collector node coupled to a collector node of the first transistor, further wherein the first and second transistors are diode connected. The sensor may further include a first operational amplifier providing negative feedback to the first current source, wherein the negative feedback is related to a difference in the base-emitter voltages of the first and second transistors, and a second operational amplifier which couples the base-emitter voltage of the second transistor across a second resistor, wherein a CTAT current flows through the second resistor.
    • 提出了一种测量集成电路内温度的带隙传感器。 传感器可以包括具有与第一电阻器和第一电流源串联耦合的发射极节点的第一晶体管,其中PTAT电流流过第一电阻器,以及第二晶体管,具有耦合到第一电阻器的基极节点的基极节点 晶体管和耦合到第一晶体管的集电极节点的集电极节点,其中第一和第二晶体管是二极管连接的。 传感器还可以包括向第一电流源提供负反馈的第一运算放大器,其中所述负反馈与所述第一和第二晶体管的基极 - 发射极电压的差异相关;以及第二运算放大器, 跨越第二电阻器的第二晶体管的发射极电压,其中CTAT电流流过第二电阻器。
    • 6. 发明授权
    • On-chip low voltage capacitor-less low dropout regulator with Q-control
    • 具有Q控制功能的片上低电压无电容低压差稳压器
    • US08872492B2
    • 2014-10-28
    • US13091715
    • 2011-04-21
    • Junmou ZhangLew G. Chua-Eoan
    • Junmou ZhangLew G. Chua-Eoan
    • G05F1/40G05F1/575
    • G05F1/575
    • Systems and method for a capacitor-less Low Dropout (LDO) voltage regulator. An error amplifier is configured to amplify a differential between a reference voltage and a regulated LDO voltage. Without including an external capacitor in the LDO voltage regulator, a Miller amplifier is coupled to an output of the error amplifier, wherein the Miller amplifier is configured to amplify a Miller capacitance formed at an input node of the Miller amplifier. A capacitor coupled to the output of the error amplifier creates a positive feedback loop for decreasing a quality factor (Q), such that system stability is improved.
    • 无电容低压差(LDO)稳压器的系统和方法。 误差放大器被配置为放大参考电压和调节LDO电压之间的差分。 在LDO稳压器中不包括外部电容器的情况下,米勒放大器耦合到误差放大器的输出端,其中,米勒放大器被配置为放大在米勒放大器的输入节点处形成的米勒电容。 耦合到误差放大器的输出的电容器产生用于降低质量因子(Q)的正反馈回路,从而提高系统稳定性。
    • 7. 发明授权
    • Gate level reconfigurable magnetic logic
    • 门级可重构磁逻辑
    • US08295082B2
    • 2012-10-23
    • US12192386
    • 2008-08-15
    • Lew G. Chua-EoanXiaochun ZhuZhi Zhu
    • Lew G. Chua-EoanXiaochun ZhuZhi Zhu
    • G11C11/14H03K19/177
    • G11C11/16
    • A re-programmable gate logic includes a plurality of non-volatile re-configurable resistance state-based memory circuits in parallel, wherein the circuits are re-configurable to implement or change a selected gate logic, and the plurality of non-volatile re-configurable resistance state-based memory circuits are each adapted to receive a logical input signal. An evaluation switch in series with the plurality of parallel non-volatile re-configurable resistance state-based memory circuits is configured to provide an output signal based on the programmed states of the memory circuits. A sensor is configured to receive the output signal and provide a logical output signal on the basis of the output signal and a reference signal provided to the sensor. The reconfigurable logic may be implemented based on using spin torque transfer (STT) magnetic tunnel junction (MTJ) magnetoresistance random access memory (MRAM) as the re-programmable memory elements. The logic configuration is retained without power.
    • 可再编程门逻辑并行包括多个非易失性可重新配置的基于电阻状态的存储器电路,其中电路可重新配置以实现或改变所选择的门逻辑, 可配置电阻状态的存储器电路各自适于接收逻辑输入信号。 与多个并行非易失性可重配置电阻状态存储电路串联的评估开关被配置为基于存储器电路的编程状态提供输出信号。 传感器被配置为接收输出信号并且基于输出信号和提供给传感器的参考信号来提供逻辑输出信号。 可重构逻辑可以基于使用自旋转矩传递(STT)磁性隧道结(MTJ)磁阻随机存取存储器(MRAM)作为可再编程存储器元件来实现。 逻辑配置在没有电源的情况下保留。