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1. 发明申请

US20080150003A1 Electron blocking layers for electronic devices 审中-公开
标题翻译：电子器件用电子阻挡层
公开(公告)号：US20080150003A1
公开(公告)日：2008-06-26
申请号：US11641956
申请日：2006-12-20
申请人： Jian Chen , Xiangfeng Duan , Karen Cruden , Chao Liu , Madhuri L. Nallabolu , Srikanth Ranganathan , Francisco Leon , J. Wallace Parce
发明人： Jian Chen , Xiangfeng Duan , Karen Cruden , Chao Liu , Madhuri L. Nallabolu , Srikanth Ranganathan , Francisco Leon , J. Wallace Parce
IPC分类号： H01L29/792 , H01L21/336
CPC分类号： H01L29/7881 , H01L29/42324 , H01L29/42332 , H01L29/517
摘要： Methods and apparatuses for electronic devices such as non-volatile memory devices are described. The memory devices include a multi-layer control dielectric, such as a double or triple layer. The multi-layer control dielectric includes a combination of high-k dielectric materials such as aluminum oxide (Al2O3), hafnium oxide (HfO2), and/or hybrid films of hafnium aluminum oxide. The multi-layer control dielectric provides enhanced characteristics, including increased charge retention, enhanced memory program/erase window, improved reliability and stability, with feasibility for single or multistate (e.g., two, three or four bit) operation.
摘要翻译：描述诸如非易失性存储器件的电子设备的方法和装置。存储器件包括多层控制电介质，例如双层或三层。多层控制电介质包括高k电介质材料如氧化铝（Al 2 O 3），氧化铪（HfO 2）和/或铪铝氧化物的混合膜的组合。多层控制电介质提供增强的特性，包括增加的电荷保留，增强的存储器编程/擦除窗口，改进的可靠性和稳定性，具有单或多（例如二，三或四位）操作的可行性。

2. 发明申请

US20080150004A1 Electron Blocking Layers for Electronic Devices 审中-公开
公开(公告)号：US20080150004A1
公开(公告)日：2008-06-26
申请号：US11688087
申请日：2007-03-19
申请人： Jian Chen , Xiangfeng Duan , Karen Cruden , Chao Liu , Madhuri L. Nallabolu , Srikanth Ranganathan , Francisco Leon , J. Wallace Parce
发明人： Jian Chen , Xiangfeng Duan , Karen Cruden , Chao Liu , Madhuri L. Nallabolu , Srikanth Ranganathan , Francisco Leon , J. Wallace Parce
IPC分类号： H01L29/792 , H01L21/336
CPC分类号： H01L29/42332 , H01L29/517 , H01L29/7881
摘要： Methods and apparatuses for electronic devices such as non-volatile memory devices are described. The memory devices include a multi-layer control dielectric, such as a double or triple layer. The multi-layer control dielectric includes a combination of high-k dielectric materials such as aluminum oxide (Al2O3), hafnium oxide (HfO2), and/or hybrid films of hafnium aluminum oxide. The multi-layer control dielectric provides enhanced characteristics, including increased charge retention, enhanced memory program/erase window, improved reliability and stability, with feasibility for single or multistate (e.g., two, three or four bit) operation.

3. 发明申请

US20080032134A1 Post-deposition encapsulation of nanostructures: compositions, devices and systems incorporating same 有权
标题翻译：纳米结构的沉积后包封：组合物，包含其的装置和系统
公开(公告)号：US20080032134A1
公开(公告)日：2008-02-07
申请号：US11706730
申请日：2007-02-13
申请人： Jeffery Whiteford , Rhett Brewer , Mihai Buretea , Jian Chen , Karen Cruden , Xiangfeng Duan , William Freeman , David Heald , Francisco Leon , Chao Liu , Andreas Meisel , Kyu Min , J. Parce , Erik Scher
发明人： Jeffery Whiteford , Rhett Brewer , Mihai Buretea , Jian Chen , Karen Cruden , Xiangfeng Duan , William Freeman , David Heald , Francisco Leon , Chao Liu , Andreas Meisel , Kyu Min , J. Parce , Erik Scher
IPC分类号： B32B5/16 , B32B15/04 , B32B17/06
CPC分类号： C09C1/3081 , B82Y30/00 , C01P2004/16 , C01P2004/45 , C01P2004/54 , C01P2004/64 , C01P2006/10 , C01P2006/40 , C01P2006/60 , C09C3/006 , C09C3/063 , C09C3/12 , H01G4/14 , Y10S977/773 , Y10T428/2982 , Y10T428/2989 , Y10T428/2991 , Y10T428/2993 , Y10T428/2995 , Y10T428/2996 , Y10T428/2998
摘要： Ligand compositions for use in preparing discrete coated nanostructures are provided, as well as the coated nanostructures themselves and devices incorporating same. Methods for post-deposition shell formation on a nanostructure and for reversibly modifying nanostructures are also provided. The ligands and coated nanostructures of the present invention are particularly useful for close packed nanostructure compositions, which can have improved quantum confinement and/or reduced cross-talk between nanostructures.
摘要翻译：提供了用于制备离散涂层纳米结构的配体组合物，以及涂覆的纳米结构本身和结合其的装置。还提供了在纳米结构上沉积后壳形成和用于可逆修饰纳米结构的方法。本发明的配体和包被的纳米结构对于紧密堆积的纳米结构组合物是特别有用的，其可以改进纳米结构的量子限制和/或减少的串扰。

4. 发明申请

US20060040103A1 Post-deposition encapsulation of nanostructures: compositions, devices and systems incorporating same 有权
公开(公告)号：US20060040103A1
公开(公告)日：2006-02-23
申请号：US11147670
申请日：2005-06-07
申请人： Jeffery Whiteford , Rhett Brewer , Mihai Buretea , Jian Chen , Karen Cruden , Xiangfeng Duan , William Freeman , David Heald , Francisco Leon , Chao Liu , Andreas Meisel , Kyu Min , J. Parce , Erik Scher
发明人： Jeffery Whiteford , Rhett Brewer , Mihai Buretea , Jian Chen , Karen Cruden , Xiangfeng Duan , William Freeman , David Heald , Francisco Leon , Chao Liu , Andreas Meisel , Kyu Min , J. Parce , Erik Scher
IPC分类号： B32B5/16
CPC分类号： C09C1/3081 , B82Y30/00 , C01P2004/16 , C01P2004/45 , C01P2004/54 , C01P2004/64 , C01P2006/10 , C01P2006/40 , C01P2006/60 , C09C3/006 , C09C3/063 , C09C3/12 , H01G4/14 , Y10S977/773 , Y10T428/2982 , Y10T428/2989 , Y10T428/2991 , Y10T428/2993 , Y10T428/2995 , Y10T428/2996 , Y10T428/2998
摘要： Ligand compositions for use in preparing discrete coated nanostructures are provided, as well as the coated nanostructures themselves and devices incorporating same. Methods for post-deposition shell formation on a nanostructure and for reversibly modifying nanostructures are also provided. The ligands and coated nanostructures of the present invention are particularly useful for close packed nanostructure compositions, which can have improved quantum confinement and/or reduced cross-talk between nanostructures.

5. 发明授权

US08252164B2 Methods for nanowire alignment and deposition 有权
标题翻译：纳米线对准和沉积的方法
公开(公告)号：US08252164B2
公开(公告)日：2012-08-28
申请号：US13113680
申请日：2011-05-23
申请人： Samuel Martin , Xiangfeng Duan , Katsumasa Fujii , James M. Hamilton , Hiroshi Iwata , Francisco Leon , Jeffrey Miller , Tetsu Negishi , Hiroshi Ohki , J. Wallace Parce , Cheri X. Y. Pereira , Paul John Schuele , Akihide Shibata , David P. Stumbo , Yasunobu Okada
发明人： Samuel Martin , Xiangfeng Duan , Katsumasa Fujii , James M. Hamilton , Hiroshi Iwata , Francisco Leon , Jeffrey Miller , Tetsu Negishi , Hiroshi Ohki , J. Wallace Parce , Cheri X. Y. Pereira , Paul John Schuele , Akihide Shibata , David P. Stumbo , Yasunobu Okada
IPC分类号： C25D13/02
CPC分类号： H01L29/0665 , B82B3/00 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L29/0673 , Y10S977/883
摘要： The present invention provides methods and systems for nanowire alignment and deposition. Energizing (e.g., an alternating current electric field) is used to align and associate nanowires with electrodes. By modulating the energizing, the nanowires are coupled to the electrodes such that they remain in place during subsequent wash and drying steps. The invention also provides methods for transferring nanowires from one substrate to another in order to prepare various device substrates. The present invention also provides methods for monitoring and controlling the number of nanowires deposited at a particular electrode pair, as well as methods for manipulating nanowires in solution.
摘要翻译：本发明提供了用于纳米线对准和沉积的方法和系统。使用通电（例如，交流电场）来使纳米线与电极对准和关联。通过调节激励，纳米线耦合到电极，使得它们在随后的洗涤和干燥步骤期间保持在适当的位置。本发明还提供了将纳米线从一个衬底转移到另一个衬底以便制备各种器件衬底的方法。本发明还提供了用于监测和控制在特定电极对上沉积的纳米线的数量的方法，以及用于操纵溶液中的纳米线的方法。

6. 发明授权

US07968474B2 Methods for nanowire alignment and deposition 有权
标题翻译：纳米线对准和沉积的方法
公开(公告)号：US07968474B2
公开(公告)日：2011-06-28
申请号：US11979949
申请日：2007-11-09
申请人： Samuel Martin , Xiangfeng Duan , Katsumasa Fujii , James M. Hamilton , Hiroshi Iwata , Francisco Leon , Jeffrey Miller , Tetsu Negishi , Hiroshi Ohki , J. Wallace Parce , Cheri X. Y. Pereira , Paul John Schuele , Akihide Shibata , David P. Stumbo , Yasunobu Okada
发明人： Samuel Martin , Xiangfeng Duan , Katsumasa Fujii , James M. Hamilton , Hiroshi Iwata , Francisco Leon , Jeffrey Miller , Tetsu Negishi , Hiroshi Ohki , J. Wallace Parce , Cheri X. Y. Pereira , Paul John Schuele , Akihide Shibata , David P. Stumbo , Yasunobu Okada
IPC分类号： H01L21/71
CPC分类号： H01L29/0665 , B82B3/00 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L29/0673 , Y10S977/883
摘要： The present invention provides methods and systems for nanowire alignment and deposition. Energizing (e.g., an alternating current electric field) is used to align and associate nanowires with electrodes. By modulating the energizing, the nanowires are coupled to the electrodes such that they remain in place during subsequent wash and drying steps. The invention also provides methods for transferring nanowires from one substrate to another in order to prepare various device substrates. The present invention also provides methods for monitoring and controlling the number of nanowires deposited at a particular electrode pair, as well as methods for manipulating nanowires in solution.
摘要翻译：本发明提供了用于纳米线对准和沉积的方法和系统。使用通电（例如，交流电场）来使纳米线与电极对准和关联。通过调节激励，纳米线耦合到电极，使得它们在随后的洗涤和干燥步骤期间保持在适当的位置。本发明还提供了将纳米线从一个衬底转移到另一个衬底以便制备各种器件衬底的方法。本发明还提供了用于监测和控制在特定电极对上沉积的纳米线的数量的方法，以及用于操纵溶液中的纳米线的方法。

7. 发明申请

US20080224123A1 Methods for nanowire alignment and deposition 有权
标题翻译：纳米线对准和沉积的方法
公开(公告)号：US20080224123A1
公开(公告)日：2008-09-18
申请号：US11979949
申请日：2007-11-09
申请人： Samuel Martin , Xiangfeng Duan , Katsumasa Fujii , James M. Hamilton , Hiroshi Iwata , Francisco Leon , Jeffrey Miller , Tetsu Negishi , Hiroshi Ohki , J. Wallace Parce , Cheri X.Y. Pereira , Paul John Schuele , Akihide Shibata , David P. Stumbo , Yasunobu Okada
发明人： Samuel Martin , Xiangfeng Duan , Katsumasa Fujii , James M. Hamilton , Hiroshi Iwata , Francisco Leon , Jeffrey Miller , Tetsu Negishi , Hiroshi Ohki , J. Wallace Parce , Cheri X.Y. Pereira , Paul John Schuele , Akihide Shibata , David P. Stumbo , Yasunobu Okada
IPC分类号： H01L31/00 , H01L21/326
CPC分类号： H01L29/0665 , B82B3/00 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L29/0673 , Y10S977/883
摘要： The present invention provides methods and systems for nanowire alignment and deposition. Energizing (e.g., an alternating current electric field) is used to align and associate nanowires with electrodes. By modulating the energizing, the nanowires are coupled to the electrodes such that they remain in place during subsequent wash and drying steps. The invention also provides methods for transferring nanowires from one substrate to another in order to prepare various device substrates. The present invention also provides methods for monitoring and controlling the number of nanowires deposited at a particular electrode pair, as well as methods for manipulating nanowires in solution.
摘要翻译：本发明提供了用于纳米线对准和沉积的方法和系统。使用通电（例如，交流电场）来使纳米线与电极对准和关联。通过调节激励，纳米线耦合到电极，使得它们在随后的洗涤和干燥步骤期间保持在适当的位置。本发明还提供了将纳米线从一个衬底转移到另一个衬底以便制备各种器件衬底的方法。本发明还提供了用于监测和控制在特定电极对上沉积的纳米线的数量的方法，以及用于操纵溶液中的纳米线的方法。

8. 发明申请

US20110284380A1 Methods for Nanowire Alignment and Deposition 有权
标题翻译：纳米线对准和沉积方法
公开(公告)号：US20110284380A1
公开(公告)日：2011-11-24
申请号：US13113680
申请日：2011-05-23
申请人： Samuel MARTIN , Xiangfeng Duan , Katsumasa Fujii , James M. Hamilton , Hiroshi Iwata , Francisco Leon , Jeffrey Miller , Tetsu Negishi , Hiroshi Ohki , J. Wallace Parce , Cheri X.Y. Pereira , Paul John Schuele , Akihide Shibata , David P. Stumbo , Yasunobu Okada
发明人： Samuel MARTIN , Xiangfeng Duan , Katsumasa Fujii , James M. Hamilton , Hiroshi Iwata , Francisco Leon , Jeffrey Miller , Tetsu Negishi , Hiroshi Ohki , J. Wallace Parce , Cheri X.Y. Pereira , Paul John Schuele , Akihide Shibata , David P. Stumbo , Yasunobu Okada
IPC分类号： C25D15/00 , B82Y30/00
CPC分类号： H01L29/0665 , B82B3/00 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L29/0673 , Y10S977/883
摘要： The present invention provides methods and systems for nanowire alignment and deposition. Energizing (e.g., an alternating current electric field) is used to align and associate nanowires with electrodes. By modulating the energizing, the nanowires are coupled to the electrodes such that they remain in place during subsequent wash and drying steps. The invention also provides methods for transferring nanowires from one substrate to another in order to prepare various device substrates. The present invention also provides methods for monitoring and controlling the number of nanowires deposited at a particular electrode pair, as well as methods for manipulating nanowires in solution.
摘要翻译：本发明提供了用于纳米线对准和沉积的方法和系统。使用通电（例如，交流电场）来使纳米线与电极对准和关联。通过调节激励，纳米线耦合到电极，使得它们在随后的洗涤和干燥步骤期间保持在适当的位置。本发明还提供了将纳米线从一个衬底转移到另一个衬底以便制备各种器件衬底的方法。本发明还提供了用于监测和控制在特定电极对上沉积的纳米线的数量的方法，以及用于操纵溶液中的纳米线的方法。

9. 发明授权

US07365395B2 Artificial dielectrics using nanostructures 失效
标题翻译：使用纳米结构的人造电介质
公开(公告)号：US07365395B2
公开(公告)日：2008-04-29
申请号：US11203432
申请日：2005-08-15
申请人： David P. Stumbo , Stephen A. Empedocles , Francisco Leon , J. Wallace Parce
发明人： David P. Stumbo , Stephen A. Empedocles , Francisco Leon , J. Wallace Parce
IPC分类号： H01L29/72
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y30/00 , G11C2213/16 , G11C2213/81 , H01L29/0673 , H01L29/4908 , H01L51/0537 , Y10S977/743 , Y10S977/745 , Y10S977/762 , Y10S977/813 , Y10S977/936
摘要： Artificial dielectrics using nanostructures, such as nanowires, are disclosed. In embodiments, artificial dielectrics using other nanostructures, such as nanorods, nanotubes or nanoribbons and the like are disclosed. The artificial dielectric includes a dielectric material with a plurality of nanowires (or other nanostructures) embedded within the dielectric material. Very high dielectric constants can be achieved with an artificial dielectric using nanostructures. The dielectric constant can be adjusted by varying the length, diameter, carrier density, shape, aspect ratio, orientation and density of the nanostructures. Additionally, a controllable artificial dielectric using nanostructures, such as nanowires, is disclosed in which the dielectric constant can be dynamically adjusted by applying an electric field to the controllable artificial dielectric. A wide range of electronic devices can use artificial dielectrics with nanostructures to improve performance. Example devices include, capacitors, thin film transistors, other types of thin film electronic devices, microstrip devices, surface acoustic wave (SAW) filters, other types of filters, and radar attenuating materials (RAM).
摘要翻译：公开了使用纳米结构的人造电介质，例如纳米线。在实施例中，公开了使用其他纳米结构的人造电介质，例如纳米棒，纳米管或纳米带等。人造电介质包括具有嵌入电介质材料内的多个纳米线（或其他纳米结构）的电介质材料。使用纳米结构的人造电介质可以实现非常高的介电常数。可以通过改变纳米结构的长度，直径，载流子密度，形状，纵横比，取向和密度来调节介电常数。此外，公开了使用纳米结构的可控人造电介质，例如纳米线，其中可以通过向可控人造电介质施加电场来动态地调整介电常数。各种电子器件可以使用具有纳米结构的人造电介质来提高性能。示例性器件包括电容器，薄膜晶体管，其他类型的薄膜电子器件，微带器件，表面声波（SAW）滤波器，其它类型的滤波器以及雷达衰减材料（RAM）。

10. 发明授权

US07473943B2 Gate configuration for nanowire electronic devices 失效
标题翻译：纳米线电子器件的栅极配置
公开(公告)号：US07473943B2
公开(公告)日：2009-01-06
申请号：US11233398
申请日：2005-09-22
申请人： Shahriar Mostarshed , Jian Chen , Francisco Leon , Yaoling Pan , Linda T. Romano
发明人： Shahriar Mostarshed , Jian Chen , Francisco Leon , Yaoling Pan , Linda T. Romano
IPC分类号： H01L29/80
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L29/42384 , H01L29/42392 , H01L29/775 , H01L29/785 , H01L29/78645 , H01L29/78681 , H01L29/7869 , Y10S977/762 , Y10S977/932 , Y10S977/938
摘要： Methods, systems, and apparatuses for electronic devices having improved gate structures are described. An electronic device includes at least one nanowire. A gate contact is positioned along at least a portion of a length of the at least one nanowire. A dielectric material layer is between the gate contact and the at least one nanowire. A source contact and a drain contact are in contact with the at least one nanowire. At least a portion of the source contact and/or the drain contact overlaps with the gate contact along the nanowire the length. In another aspect, an electronic device includes a nanowire having a semiconductor core surrounded by an insulating shell layer. A ring shaped first gate region surrounds the nanowire along a portion of the length of the nanowire. A second gate region is positioned along the length of the nanowire between the nanowire and the substrate. A source contact and a drain contact are coupled to the semiconductor core of the nanowire at respective exposed portions of the semiconductor core.
摘要翻译：描述了具有改进的门结构的电子设备的方法，系统和装置。电子装置包括至少一个纳米线。栅极接触沿至少一个纳米线的长度的至少一部分定位。介电材料层在栅极接触和至少一个纳米线之间。源极触点和漏极触点与至少一个纳米线接触。源极触点和/或漏极触点的至少一部分沿着该纳米线的长度与栅极触点重叠。另一方面，一种电子器件包括具有被绝缘壳层包围的半导体芯的纳米线。环形第一栅极区域沿着纳米线长度的一部分包围纳米线。第二栅极区沿着纳米线和衬底之间的纳米线的长度定位。源极触点和漏极触点在半导体芯的相应的暴露部分处耦合到纳米线的半导体芯。

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