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1. 发明申请

US20080226840A1 Process for synthesizing uniform nanocrystalline films 审中-公开
标题翻译：合成均匀纳米晶膜的方法
公开(公告)号：US20080226840A1
公开(公告)日：2008-09-18
申请号：US11729332
申请日：2007-03-28
申请人： Jes Asmussen , Wen-Shin Huang
发明人： Jes Asmussen , Wen-Shin Huang
IPC分类号： C23C16/513
CPC分类号： C23C16/272 , C23C16/0254 , C23C16/274
摘要： A CVD process for producing nanocrystalline films using a plasma (56, 312) created by an argon atmosphere (at least about 90 percent by volume) containing methane (preferably about at least about 1% by volume) and optionally hydrogen (preferably 0.001 to 2% by volume) is described. Strictly controlled gas purity and an apparatus which excludes oxygen and nitrogen from being introduced from outside of the chamber (40, 305) are used. The films are coated on various substrates to provide seals, optical applications such as on lenses and as a substrate material for surface acoustic wave (SAW) devices.
摘要翻译：使用由含有甲烷（优选约至少约1体积％）和任选的氢（优选0.001至2）的氩气气氛（至少约90体积％）产生的等离子体（56,312）制备纳米晶体膜的CVD方法％）。使用严格控制的气体纯度和排除从室（40,305）外部引入氧和氮的装置。膜被涂覆在各种基底上以提供密封，光学应用，例如在透镜上以及用作表面声波（SAW）器件的基底材料。

2. 发明授权

US06858969B2 Surface acoustic wave devices based on unpolished nanocrystalline diamond 失效
标题翻译：基于未抛光纳米晶体金刚石的表面声波器件
公开(公告)号：US06858969B2
公开(公告)日：2005-02-22
申请号：US10341514
申请日：2003-01-13
申请人： Baokang Bi , Brage Golding , Wen-Shin Huang , Jes Asmussen
发明人： Baokang Bi , Brage Golding , Wen-Shin Huang , Jes Asmussen
IPC分类号： H03H9/02 , H01L41/08
CPC分类号： H03H9/02582
摘要： Surface Acoustic Wave (SAW) devices with an unpolished or nominally polished nanocrystalline diamond film, metal electrodes and piezoelectric composition coatings are described. The devices are used as radio frequency and microwave filters.
摘要翻译：描述了具有未抛光或名义抛光的纳米晶金刚石膜，金属电极和压电组合物涂层的表面声波（SAW）器件。这些设备用作射频和微波滤波器。

3. 发明授权

US08316797B2 Microwave plasma reactors 有权
标题翻译：微波等离子体反应器
公开(公告)号：US08316797B2
公开(公告)日：2012-11-27
申请号：US12456388
申请日：2009-06-16
申请人： Jes Asmussen , Timothy Grotjohn , Donnie K. Reinhard , Thomas Schuelke , M. Kagan Yaran , Kadek W. Hemawan , Michael Becker , David King , Yajun Gu , Jing Lu
发明人： Jes Asmussen , Timothy Grotjohn , Donnie K. Reinhard , Thomas Schuelke , M. Kagan Yaran , Kadek W. Hemawan , Michael Becker , David King , Yajun Gu , Jing Lu
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： C23C16/511 , C23C16/274 , C23C16/279 , C30B25/105 , C30B25/16 , C30B29/04 , C30B35/00 , H01J37/32256 , H05H1/46
摘要： New and improved microwave plasma assisted reactors, for example chemical vapor deposition (MPCVD) reactors, are disclosed. The disclosed microwave plasma assisted reactors operate at pressures ranging from about 10 Torr to about 760 Torr. The disclosed microwave plasma assisted reactors include a movable lower sliding short and/or a reduced diameter conductive stage in a coaxial cavity of a plasma chamber. For a particular application, the lower sliding short position and/or the conductive stage diameter can be variably selected such that, relative to conventional reactors, the reactors can be tuned to operate over larger substrate areas, operate at higher pressures, and discharge absorbed power densities with increased diamond synthesis rates (carats per hour) and increased deposition uniformity.
摘要翻译：公开了新的和改进的微波等离子体辅助反应器，例如化学气相沉积（MPCVD）反应器。所公开的微波等离子体辅助反应器在约10托至约760托的压力下工作。所公开的微波等离子体辅助反应器包括在等离子体室的同轴空腔中的可移动的较低滑动短路径和/或直径减小的导电平台。对于特定应用，可以可变地选择较低的滑动短位置和/或导电平台直径，使得相对于常规的反应器，可以将反应器调整为在更大的衬底区域上操作，在更高的压力下操作，并且放电吸收的功率具有增加的金刚石合成速率（克拉每小时）和增加的沉积均匀性的密度。

4. 发明授权

US4943345A Plasma reactor apparatus and method for treating a substrate 失效
标题翻译：等离子体反应器装置及其处理方法
公开(公告)号：US4943345A
公开(公告)日：1990-07-24
申请号：US328017
申请日：1989-03-23
申请人： Jes Asmussen , Donnie K. Reinhard
发明人： Jes Asmussen , Donnie K. Reinhard
IPC分类号： B01J19/08 , C23C16/27 , C23C16/452 , C23C16/50 , C23C16/505 , C23C16/511 , C23C16/52 , H01J37/32
CPC分类号： H01J37/32357 , C23C16/452 , C23C16/505 , C23C16/511
摘要： An apparatus and method for treating a substrate with an excited species removed from a plasma (15, 15a, 31, 52, 53) is described. The apparatus includes closed or open end tubes (13, 22, 30, 54 and 55) with apparatus or nozzles (16, 32, 56 and 57) for directing the excited species at a substrate (17, 33, 59) and a tunable plate or sliding short (11, 38, 39, 40) internal or external of the tubes for positioning the plasma in the tube during operation of the apparatus. Tuning or nozzle position or power variations are used. The method and apparatus is useful for depositing films, etching and the like.

5. 发明授权

US4630566A Microwave or UHF plasma improved apparatus 失效
标题翻译：微波或UHF等离子体改进装置
公开(公告)号：US4630566A
公开(公告)日：1986-12-23
申请号：US798309
申请日：1985-11-15
申请人： Jes Asmussen , Donnie K. Reinhard
发明人： Jes Asmussen , Donnie K. Reinhard
IPC分类号： H01J27/16 , H01J37/32 , C23C13/08 , H01J7/46
CPC分类号： H01J37/32256 , H01J27/16 , H01J37/32192 , H01J37/32284 , H01J37/32678
摘要： A method for etching or chemically treating a surface of an article utilizing a radio frequency wave ion generating apparatus which provides a thin disk shaped plasma is described. The plasma disks can have a relatively large diameter (on the order of magnitude 50 centimeters). The plasma disks can be created without using a static magnetic field. The radio frequency waves are preferably microwaves or UHF. The method is particularly useful for ion or free radical irradiation of the surface provided in the plasma or for irradiation of the surface by ions accelerated outside a cavity containing the plasma. Disk plasmas are created over a wide pressure range (10.sup.-4 Torr to 1 atmosphere) and are highly ionized at low pressures. An apparatus adapted for treating a surface of an article with ions from a plasma is also described. The method and apparatus are preferably used for treating a surface forming part of an integrated circuit.
摘要翻译：描述了利用提供薄盘形等离子体的射频波离子产生装置对制品的表面进行蚀刻或化学处理的方法。等离子盘可以具有相对大的直径（大约50厘米数量级）。可以在不使用静态磁场的情况下创建等离子体盘。射频最好是微波或UHF。该方法对于提供在等离子体中的表面的离子或自由基照射或通过在包含等离子体的空腔外加速的离子照射表面特别有用。在宽压力范围（10-4乇至1个大气压）下产生盘等离子体，并在低压下高度电离。还描述了适于用来自等离子体的离子处理制品的表面的装置。该方法和装置优选用于处理形成集成电路部分的表面。

6. 发明授权

US4585668A Method for treating a surface with a microwave or UHF plasma and improved apparatus 失效
标题翻译：用微波或UHF等离子体处理表面的方法和改进的装置
公开(公告)号：US4585668A
公开(公告)日：1986-04-29
申请号：US641190
申请日：1984-08-16
申请人： Jes Asmussen , Donnie K. Reinhard
发明人： Jes Asmussen , Donnie K. Reinhard
IPC分类号： H01J27/16 , H01J37/32 , B05D3/06
CPC分类号： H01J37/32256 , H01J27/16 , H01J37/32192 , H01J37/32284 , H01J37/32678
摘要： A method for etching or chemically treating a surface of an article utilizing a radio frequency wave ion generating apparatus which provides a thin disk shaped plasma is described. The plasma disks can have a relatively large diameter (on the order of magnitude 50 centimeters). The plasma disks can be created without using a static magnetic field. The radio frequency waves are preferably microwaves or UHF. The method is particularly useful for ion or free radical irradiation of the surface provided in the plasma or for irradiation of the surface by ions accelerated outside a cavity containing the plasma. Disk plasmas are created over a wide pressure range (10.sup.-4 Torr to 1 atmosphere) and are highly ionized at low pressures. An apparatus adapted for treating a surface of an article with ions from a plasma is also described. The method and apparatus are preferably used for treating a surface forming part of an integrated circuit.
摘要翻译：描述了利用提供薄盘形等离子体的射频波离子产生装置对制品的表面进行蚀刻或化学处理的方法。等离子盘可以具有相对大的直径（大约50厘米数量级）。可以在不使用静态磁场的情况下创建等离子体盘。射频最好是微波或UHF。该方法对于提供在等离子体中的表面的离子或自由基照射或通过在包含等离子体的空腔外加速的离子照射表面特别有用。在宽压力范围（10-4乇至1个大气压）下产生盘等离子体，并在低压下高度电离。还描述了适于用来自等离子体的离子处理制品的表面的装置。该方法和装置优选用于处理形成集成电路部分的表面。

7. 发明申请

US20090239078A1 Process and apparatus for diamond synthesis 有权
标题翻译：金刚石合成工艺和设备
公开(公告)号：US20090239078A1
公开(公告)日：2009-09-24
申请号：US12381270
申请日：2009-03-10
申请人： Jes Asmussen , Timothy Grotjohn , Donnie Reinhard , Rahul Ramamurti , M. Kagan Yaran , Thomas Schuelke , Michael Becker , David King
发明人： Jes Asmussen , Timothy Grotjohn , Donnie Reinhard , Rahul Ramamurti , M. Kagan Yaran , Thomas Schuelke , Michael Becker , David King
IPC分类号： C23C16/27 , H05H1/46 , B32B9/00
CPC分类号： C30B25/105 , C23C16/274 , C23C16/278 , C23C16/4585 , C23C16/4586 , C30B25/08 , C30B25/12 , C30B29/04 , H01J37/32192 , Y10T428/30
摘要： The present invention relates to a microwave plasma deposition process and apparatus for producing diamond, preferably as single crystal diamond (SCD). The process and apparatus enables the production of multiple layers of the diamond by the use of an extending device to increase the length and the volume of a recess in a holder containing a SCD substrate as layers of diamond are deposited. The diamond is used for abrasives, cutting tools, gems, electronic substrates, heat sinks, electrochemical electrodes, windows for high power radiation and electron beams, and detectors.
摘要翻译：本发明涉及微波等离子体沉积工艺和用于生产金刚石，优选为单晶金刚石（SCD）的设备。该方法和装置能够通过使用延伸装置来生产多层金刚石，以增加包含SCD衬底的保持器中的凹槽的长度和体积，因为沉积了金刚石层。金刚石用于磨料，切割工具，宝石，电子基板，散热片，电化学电极，大功率辐射窗和电子束以及探测器。

8. 发明授权

US5645645A Method and apparatus for plasma treatment of a surface 失效
标题翻译：用于等离子体处理表面的方法和装置
公开(公告)号：US5645645A
公开(公告)日：1997-07-08
申请号：US672456
申请日：1996-06-28
申请人： Jie Zhang , Jes Asmussen
发明人： Jie Zhang , Jes Asmussen
IPC分类号： H05H1/46 , B23P15/32 , C23C16/26 , C23C16/27 , C23C16/50 , C23C16/511 , C23F4/00 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31 , C23C16/00
CPC分类号： C23C16/274 , C23C16/511 , H01J37/32284 , H01J2237/3327
摘要： A radiofrequency wave apparatus and method which provides a relatively high concentration of reactive species from a plasma for the treatment of a surface particularly of a substrate (31) with a complex geometry in a holder (62) which masks a portion of the substrate. The radiofrequency waves are preferably microwaves or UHF waves. The apparatus and method is particularly useful for rapid plasma assisted chemical vapor deposition of diamond on a portion of the substrate, particularly on surfaces of objects with complex geometries such as a drill (60) or a seal ring (64).
摘要翻译：一种射频波装置和方法，其提供来自等离子体的相对高浓度的反应物质，用于处理具有复杂几何形状的基底（31）的表面，所述基底（31）具有掩模基底的一部分的保持器（62）。射频波优选地是微波或UHF波。该设备和方法特别适用于在基底的一部分上，特别是具有复杂几何形状的物体（例如钻头）或密封环（64）的金刚石的快速等离子体辅助化学气相沉积。

9. 发明授权

US5311103A Apparatus for the coating of material on a substrate using a microwave or UHF plasma 失效
标题翻译：用于使用微波或UHF等离子体在基板上涂覆材料的装置
公开(公告)号：US5311103A
公开(公告)日：1994-05-10
申请号：US890877
申请日：1992-06-01
申请人： Jes Asmussen , Jie Zhang
发明人： Jes Asmussen , Jie Zhang
IPC分类号： C23C16/505 , C23C16/511 , H01J37/32 , H01J7/24
CPC分类号： H01J37/32449 , C23C16/505 , C23C16/511 , H01J37/32256 , H01J2237/3325
摘要： An improved radiofrequency wave apparatus (10) which provides a relatively large diameter (on the order of magnitude 500 millimeters) plasma (56) for the coating of a material on a surface of a substrate (50) is described. The apparatus has a movable stage (54), which is used to change the position of the substrate with respect to the plasma. The radiofrequency waves are preferably microwaves or UHF waves (2.45 GHz or 915 MHg). The apparatus has a probe (30) which is mounted along the longitudinal axis (A--A) through a sliding short (16). The apparatus operates in the TM mode and is particularly useful for uniformly coating a relatively large surface of the substrate (or a number of smaller surfaces of substrates at the same time) with a material which is formed in the plasma. The apparatus has been used for depositing diamond films on a number of substrates (Si, Si.sub.3 N.sub.4 and the like).
摘要翻译：描述了提供用于在基板（50）的表面上涂覆材料的等离子体（56）的相对较大直径（大约500毫米数量级）的改进的射频波装置（10）。该装置具有可移动台（54），用于改变基板相对于等离子体的位置。射频波优选地是微波或UHF波（2.45GHz或915MHz）。该装置具有通过滑动短路（16）沿纵向轴线（A-A）安装的探头（30）。该装置以TM模式工作，并且特别适用于在等离子体中形成的材料均匀地涂覆基板的相对大的表面（或同时涂覆基板的多个较小表面）。该装置已经用于在许多基底（Si，Si 3 N 4等）上沉积金刚石膜。

10. 发明授权

US4792772A Microwave apparatus 失效
标题翻译：微波炉
公开(公告)号：US4792772A
公开(公告)日：1988-12-20
申请号：US88377
申请日：1987-08-24
申请人： Jes Asmussen
发明人： Jes Asmussen
IPC分类号： H01P7/06 , H05H7/18
CPC分类号： H01P7/06
摘要： An apparatus 10 with gears (22a, 22b, 22c, 25) for adjusting the position of a plate (13) in a cavity (12) and a rack (51) and gear (53) for moving a probe (15) into and out of the cavity is described. The apparatus includes knobs (34, 55) for controlling the movement of the plate and probe. Micrometers (37, 52) measure the precise position of the plate and probe in the cavity. The apparatus allows very precise tuning for selection of a mode of radiofrequency wave in the cavity and fine tuning within the mode.
摘要翻译：具有用于调节空腔（12）中的板（13）的位置和齿条（51）的齿轮（22a，22b，22c，25）的装置10和齿轮（53），用于将探针（15）移动到描述了空腔。该装置包括用于控制板和探针运动的旋钮（34,55）。千分尺（37,52）测量板和探针在腔中的精确位置。该装置允许非常精确的调谐以选择腔内的射频波模式，并在该模式内进行微调。

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