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1. 发明授权

US6077787A Method for radiofrequency wave etching 失效
标题翻译：射频波蚀刻方法
公开(公告)号：US6077787A
公开(公告)日：2000-06-20
申请号：US533562
申请日：1995-09-25
申请人： Donnie K. Reinhard , Rabindra N. Chakraborty , Jes Asmussen , Paul D. Goldman
发明人： Donnie K. Reinhard , Rabindra N. Chakraborty , Jes Asmussen , Paul D. Goldman
IPC分类号： H05H1/46 , C23F4/00 , C30B33/12 , H01J37/32 , H01L21/302 , H01L21/3065 , H01L21/311
CPC分类号： H01J37/32266 , H01J37/32192 , H01J2237/3344 , Y10S438/964
摘要： A method for selective controlled etching of a material particularly by sequentially switching between two (2) or more modes of radiofrequency waves and/or by distance from a source of the microwaves. The modes and/or distance are selected depending upon the surface of the material to be etched. The etching is rapidly conducted at 0.5 mtorr to 10 torr, preferably using microwave plasma etching.
摘要翻译：一种用于选择性控制蚀刻材料的方法，特别是通过在两（2）个或更多个射频波模式和/或距离微波源的距离之间顺序切换。根据待蚀刻材料的表面选择模式和/或距离。蚀刻在0.5mtorr至10torr下快速进行，优选使用微波等离子体蚀刻。

2. 发明授权

US5736818A Resonant radiofrequency wave plasma generating apparatus with improved stage 失效
标题翻译：共振射频波等离子体发生装置，具有改进的阶段
公开(公告)号：US5736818A
公开(公告)日：1998-04-07
申请号：US616349
申请日：1996-03-15
申请人： Michael J. Ulczynski , Donnie K. Reinhard , Jes Asmussen
发明人： Michael J. Ulczynski , Donnie K. Reinhard , Jes Asmussen
IPC分类号： H01J37/32 , H05H1/46
CPC分类号： H01J37/32532 , H01J37/32192 , H01J37/32834
摘要： A plasma (56, 333) generating apparatus (10, 320, 450) wherein a stage (250, 300, 300A, 350, 400, 425) is constructed to keep the plasma on the substrate (S). A pair of electrically, non-conductive tubes (252, 252A, 303, 305, 303A, 305A 403, 405) are mounted on a conductive base plate (253,306,406) having holes (255, 306B) for gas flow and one of the tubes supports a conductive support plate (251, 301, 351, 401) for a substrate (S). An electrically conductive disk (304, 404) between the tubes is provided. An outer conductive tube (307, 418) is preferably used with larger diameter chambers. The stage is designed to prevent the plasma from falling below conductive support plate which preferably mounts a graphite insert (302, 352, 402) which supports the substrate.
摘要翻译：一种等离子体（56,333）发生装置（10,320,450），其中构造了用于将等离子体保持在衬底（S）上的级（250,3300,300,400,450）。一对电不导电管（252,252A，303,305,303A，305A，403,405）安装在具有用于气流的孔（255,306B）的导电基板（253,306,406）上，并且其中一个管支撑用于衬底（S）的导电支撑板（251,301,351,401）。提供了管之间的导电盘（304,404）。外导电管（307,418）优选用于较大直径的腔室。该台被设计成防止等离子体落在导电支撑板之下，其优选地安装支撑衬底的石墨插入件（302,352,402）。

3. 发明授权

US5711698A Method of synthetic diamond ablation with an oxygen plasma and synthetic diamonds etched accordingly 失效
标题翻译：用氧等离子体和合成金刚石进行合成金刚石烧蚀的方法相应地蚀刻
公开(公告)号：US5711698A
公开(公告)日：1998-01-27
申请号：US437102
申请日：1995-05-05
申请人： Rabindra N. Chakraborty , Michael J. Ferrecchia , Paul D. Goldman , Donnie K. Reinhard
发明人： Rabindra N. Chakraborty , Michael J. Ferrecchia , Paul D. Goldman , Donnie K. Reinhard
IPC分类号： B01J19/08 , C04B41/00 , C04B41/53 , C04B41/80 , C04B41/91 , C30B29/04 , C30B33/00 , H01L21/3065 , B24B1/00
CPC分类号： C04B41/009 , C04B41/0054 , C04B41/5346 , C04B41/80 , C04B41/91 , C30B29/04 , C30B33/00 , H01L21/3065 , C04B2111/00844
摘要： A method for ablating a synthetic diamond having a pitted surface includes applying a colloidal graphite to the surface of the diamond and subjecting it to an oxygen plasma so that preferably approximately 50 microns are removed from the surface of the synthetic diamond. The resulting surface of the diamond is virtually pit free. Preferably, the diamond is then mechanically lapped for finishing.
摘要翻译：用于烧蚀具有凹坑表面的合成金刚石的方法包括将胶体石墨施加到金刚石的表面并使其经受氧等离子体，使得优选地从合成金刚石的表面除去约50微米。所得到的钻石表面实际上是无空隙的。优选地，将金刚石机械研磨以进行精加工。

4. 发明申请

US20100034984A1 Microwave plasma reactors 有权
标题翻译：微波等离子体反应器
公开(公告)号：US20100034984A1
公开(公告)日：2010-02-11
申请号：US12456388
申请日：2009-06-16
申请人： Jes Asmussen , Timothy Grotjohn , Donnie K. Reinhard , Thomas Schuelke , M. Kagan Yaran , Kadek W. Hemawan , Michael Becker , David King , Yajun Gu , Jing Lu
发明人： Jes Asmussen , Timothy Grotjohn , Donnie K. Reinhard , Thomas Schuelke , M. Kagan Yaran , Kadek W. Hemawan , Michael Becker , David King , Yajun Gu , Jing Lu
IPC分类号： C23C16/511 , C23C16/00
CPC分类号： C23C16/511 , C23C16/274 , C23C16/279 , C30B25/105 , C30B25/16 , C30B29/04 , C30B35/00 , H01J37/32256 , H05H1/46
摘要： New and improved microwave plasma assisted reactors, for example chemical vapor deposition (MPCVD) reactors, are disclosed. The disclosed microwave plasma assisted reactors operate at pressures ranging from about 10 Torr to about 760 Torr. The disclosed microwave plasma assisted reactors include a movable lower sliding short and/or a reduced diameter conductive stage in a coaxial cavity of a plasma chamber. For a particular application, the lower sliding short position and/or the conductive stage diameter can be variably selected such that, relative to conventional reactors, the reactors can be tuned to operate over larger substrate areas, operate at higher pressures, and discharge absorbed power densities with increased diamond synthesis rates (carats per hour) and increased deposition uniformity.
摘要翻译：公开了新的和改进的微波等离子体辅助反应器，例如化学气相沉积（MPCVD）反应器。所公开的微波等离子体辅助反应器在约10托至约760托的压力下工作。所公开的微波等离子体辅助反应器包括在等离子体室的同轴空腔中的可移动的下滑动短路径和/或直径减小的导电平台。对于特定应用，可以可变地选择较低的滑动短位置和/或导电平台直径，使得相对于常规的反应器，可以将反应器调整为在更大的衬底区域上操作，在更高的压力下操作，并且放电吸收的功率具有增加的金刚石合成速率（克拉每小时）和增加的沉积均匀性的密度。

5. 发明授权

US4727293A Plasma generating apparatus using magnets and method 失效
标题翻译：使用磁体的等离子体发生装置及方法
公开(公告)号：US4727293A
公开(公告)日：1988-02-23
申请号：US849052
申请日：1986-04-07
申请人： Jes Asmussen , Donnie K. Reinhard , Mahmoud Dahimene
发明人： Jes Asmussen , Donnie K. Reinhard , Mahmoud Dahimene
IPC分类号： H01J27/16 , H01J37/32 , H01J7/24 , H05B31/26
CPC分类号： H01J37/32256 , H01J27/16 , H01J37/32192 , H01J37/32284 , H01J37/32678
摘要： An improved ion generating apparatus for producing a plasma disk using magnets 34 and 35 around a region 16 in a chamber 15 positioned in a microwave cavity is described. The apparatus is particularly operated at a microwave frequency such that electron cyclotron resonance is produced in the plasma to create an accelerating surface for the electrons around and inside of the plasma. The apparatus can be operated to treat an article 100 in the plasma or a holder 39, with a grid 51 to withdraw particles or with a magnets 47 around an opening 48 forming a nozzle which with electron cyclotron resonance produces a neutral beam of charged particles. The apparatus is particularly useful as a plasma source especially for oxidation, etching and deposition.
摘要翻译：描述了一种改进的离子产生装置，用于使用位于微波腔中的腔室15中的区域16周围的磁体34和35来产生等离子体盘。该装置特别地以微波频率操作，使得在等离子体中产生电子回旋共振以产生等离子体周围和内部的电子的加速表面。该装置可以操作以处理等离子体中的物品100或保持器39，栅格51用于取出颗粒或围绕形成喷嘴的开口48周围的磁体47，电子回旋共振产生带电粒子的中性束。该装置特别用作等离子体源，特别用于氧化，蚀刻和沉积。

6. 发明授权

US4691662A Dual plasma microwave apparatus and method for treating a surface 失效
标题翻译：双等离子体微波装置和处理表面的方法
公开(公告)号：US4691662A
公开(公告)日：1987-09-08
申请号：US873694
申请日：1986-06-12
申请人： Thaddeus A. Roppel , Jes Asmussen , Donnie K. Reinhard
发明人： Thaddeus A. Roppel , Jes Asmussen , Donnie K. Reinhard
IPC分类号： C23C14/02 , H01J27/16 , H01J27/18 , H01J37/32 , C23C14/00 , B05D3/06
CPC分类号： H01J37/32357 , H01J27/16 , H01J27/18 , H01J37/32256 , H01J37/32284 , H01J37/32678
摘要： A plasma apparatus which generates a radio frequency (UHF or microwave) disk plasma 16 and a hybrid plasma 45 derived from the disk plasma. The microwave plasma acts as a source of excited ion and free radical species and electrons for the second plasma which is hybrid in that it contains species from both microwave and dc (or rf depending on bias) excitation. The hybrid plasma can be used to treat an article 43 with different species than are present in the disk plasma and provides more control in this regard than a single plasma.
摘要翻译：一种产生射频（UHF或微波）盘等离子体16的等离子体装置和衍生自盘等离子体的混合等离子体45。微波等离子体作为第二等离子体的激发离子和自由基物质和电子的来源，其混合在一起，因为它包含来自微波和直流（或rf取决于偏置）激发的物质。混合等离子体可用于处理具有不同于盘等离子体中的物质的物品43，并且在这方面提供比单个等离子体更多的控制。

7. 发明授权

US08316797B2 Microwave plasma reactors 有权
标题翻译：微波等离子体反应器
公开(公告)号：US08316797B2
公开(公告)日：2012-11-27
申请号：US12456388
申请日：2009-06-16
申请人： Jes Asmussen , Timothy Grotjohn , Donnie K. Reinhard , Thomas Schuelke , M. Kagan Yaran , Kadek W. Hemawan , Michael Becker , David King , Yajun Gu , Jing Lu
发明人： Jes Asmussen , Timothy Grotjohn , Donnie K. Reinhard , Thomas Schuelke , M. Kagan Yaran , Kadek W. Hemawan , Michael Becker , David King , Yajun Gu , Jing Lu
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： C23C16/511 , C23C16/274 , C23C16/279 , C30B25/105 , C30B25/16 , C30B29/04 , C30B35/00 , H01J37/32256 , H05H1/46
摘要： New and improved microwave plasma assisted reactors, for example chemical vapor deposition (MPCVD) reactors, are disclosed. The disclosed microwave plasma assisted reactors operate at pressures ranging from about 10 Torr to about 760 Torr. The disclosed microwave plasma assisted reactors include a movable lower sliding short and/or a reduced diameter conductive stage in a coaxial cavity of a plasma chamber. For a particular application, the lower sliding short position and/or the conductive stage diameter can be variably selected such that, relative to conventional reactors, the reactors can be tuned to operate over larger substrate areas, operate at higher pressures, and discharge absorbed power densities with increased diamond synthesis rates (carats per hour) and increased deposition uniformity.
摘要翻译：公开了新的和改进的微波等离子体辅助反应器，例如化学气相沉积（MPCVD）反应器。所公开的微波等离子体辅助反应器在约10托至约760托的压力下工作。所公开的微波等离子体辅助反应器包括在等离子体室的同轴空腔中的可移动的较低滑动短路径和/或直径减小的导电平台。对于特定应用，可以可变地选择较低的滑动短位置和/或导电平台直径，使得相对于常规的反应器，可以将反应器调整为在更大的衬底区域上操作，在更高的压力下操作，并且放电吸收的功率具有增加的金刚石合成速率（克拉每小时）和增加的沉积均匀性的密度。

8. 发明授权

US4943345A Plasma reactor apparatus and method for treating a substrate 失效
标题翻译：等离子体反应器装置及其处理方法
公开(公告)号：US4943345A
公开(公告)日：1990-07-24
申请号：US328017
申请日：1989-03-23
申请人： Jes Asmussen , Donnie K. Reinhard
发明人： Jes Asmussen , Donnie K. Reinhard
IPC分类号： B01J19/08 , C23C16/27 , C23C16/452 , C23C16/50 , C23C16/505 , C23C16/511 , C23C16/52 , H01J37/32
CPC分类号： H01J37/32357 , C23C16/452 , C23C16/505 , C23C16/511
摘要： An apparatus and method for treating a substrate with an excited species removed from a plasma (15, 15a, 31, 52, 53) is described. The apparatus includes closed or open end tubes (13, 22, 30, 54 and 55) with apparatus or nozzles (16, 32, 56 and 57) for directing the excited species at a substrate (17, 33, 59) and a tunable plate or sliding short (11, 38, 39, 40) internal or external of the tubes for positioning the plasma in the tube during operation of the apparatus. Tuning or nozzle position or power variations are used. The method and apparatus is useful for depositing films, etching and the like.

9. 发明授权

US4630566A Microwave or UHF plasma improved apparatus 失效
标题翻译：微波或UHF等离子体改进装置
公开(公告)号：US4630566A
公开(公告)日：1986-12-23
申请号：US798309
申请日：1985-11-15
申请人： Jes Asmussen , Donnie K. Reinhard
发明人： Jes Asmussen , Donnie K. Reinhard
IPC分类号： H01J27/16 , H01J37/32 , C23C13/08 , H01J7/46
CPC分类号： H01J37/32256 , H01J27/16 , H01J37/32192 , H01J37/32284 , H01J37/32678
摘要： A method for etching or chemically treating a surface of an article utilizing a radio frequency wave ion generating apparatus which provides a thin disk shaped plasma is described. The plasma disks can have a relatively large diameter (on the order of magnitude 50 centimeters). The plasma disks can be created without using a static magnetic field. The radio frequency waves are preferably microwaves or UHF. The method is particularly useful for ion or free radical irradiation of the surface provided in the plasma or for irradiation of the surface by ions accelerated outside a cavity containing the plasma. Disk plasmas are created over a wide pressure range (10.sup.-4 Torr to 1 atmosphere) and are highly ionized at low pressures. An apparatus adapted for treating a surface of an article with ions from a plasma is also described. The method and apparatus are preferably used for treating a surface forming part of an integrated circuit.
摘要翻译：描述了利用提供薄盘形等离子体的射频波离子产生装置对制品的表面进行蚀刻或化学处理的方法。等离子盘可以具有相对大的直径（大约50厘米数量级）。可以在不使用静态磁场的情况下创建等离子体盘。射频最好是微波或UHF。该方法对于提供在等离子体中的表面的离子或自由基照射或通过在包含等离子体的空腔外加速的离子照射表面特别有用。在宽压力范围（10-4乇至1个大气压）下产生盘等离子体，并在低压下高度电离。还描述了适于用来自等离子体的离子处理制品的表面的装置。该方法和装置优选用于处理形成集成电路部分的表面。

10. 发明授权

US4585668A Method for treating a surface with a microwave or UHF plasma and improved apparatus 失效
标题翻译：用微波或UHF等离子体处理表面的方法和改进的装置
公开(公告)号：US4585668A
公开(公告)日：1986-04-29
申请号：US641190
申请日：1984-08-16
申请人： Jes Asmussen , Donnie K. Reinhard
发明人： Jes Asmussen , Donnie K. Reinhard
IPC分类号： H01J27/16 , H01J37/32 , B05D3/06
CPC分类号： H01J37/32256 , H01J27/16 , H01J37/32192 , H01J37/32284 , H01J37/32678
摘要： A method for etching or chemically treating a surface of an article utilizing a radio frequency wave ion generating apparatus which provides a thin disk shaped plasma is described. The plasma disks can have a relatively large diameter (on the order of magnitude 50 centimeters). The plasma disks can be created without using a static magnetic field. The radio frequency waves are preferably microwaves or UHF. The method is particularly useful for ion or free radical irradiation of the surface provided in the plasma or for irradiation of the surface by ions accelerated outside a cavity containing the plasma. Disk plasmas are created over a wide pressure range (10.sup.-4 Torr to 1 atmosphere) and are highly ionized at low pressures. An apparatus adapted for treating a surface of an article with ions from a plasma is also described. The method and apparatus are preferably used for treating a surface forming part of an integrated circuit.
摘要翻译：描述了利用提供薄盘形等离子体的射频波离子产生装置对制品的表面进行蚀刻或化学处理的方法。等离子盘可以具有相对大的直径（大约50厘米数量级）。可以在不使用静态磁场的情况下创建等离子体盘。射频最好是微波或UHF。该方法对于提供在等离子体中的表面的离子或自由基照射或通过在包含等离子体的空腔外加速的离子照射表面特别有用。在宽压力范围（10-4乇至1个大气压）下产生盘等离子体，并在低压下高度电离。还描述了适于用来自等离子体的离子处理制品的表面的装置。该方法和装置优选用于处理形成集成电路部分的表面。

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