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1. 发明授权

US07938879B2 Power generation from solid aluminum 有权
标题翻译：固体铝发电
公开(公告)号：US07938879B2
公开(公告)日：2011-05-10
申请号：US11747706
申请日：2007-05-11
申请人： Jerry M. Woodall , Eric S. Harmon , Kurt C. Koehler , Jeffrey T. Ziebarth , Charles R. Allen , Yuan Zheng , Jong-Hyeok Jeon , George H. Goble , David B. Salzman
发明人： Jerry M. Woodall , Eric S. Harmon , Kurt C. Koehler , Jeffrey T. Ziebarth , Charles R. Allen , Yuan Zheng , Jong-Hyeok Jeon , George H. Goble , David B. Salzman
IPC分类号： C22B11/10
CPC分类号： C01B3/08 , C22C21/00 , C22C28/00 , Y02E60/36 , Y02P20/133
摘要： A fuel for splitting water into hydrogen and an oxide component comprises a substantially solid pellet formed from a solid-like mixture of a solid-state source material capable of oxidizing in water to form hydrogen and a passivation surface layer of the oxide component, and a passivation preventing agent that is substantially inert to water in an effective amount to prevent passivation of the solid-state material during oxidation. The pellets may be introduced into water or other suitable oxidizer in a controlled rate to control the rate of reaction of the source material with the oxidizer, and thereby control the rate of formation of hydrogen. Methods are described for producing the solid-like mixture in varying weight percent of source material to passivation preventing agent.
摘要翻译：用于将水分解成氢气和氧化物组分的燃料包括由能够在水中氧化形成氢气的固态源材料的固体状混合物形成的基本上固体的颗粒和氧化物组分的钝化表面层，钝化防止剂，其在有效量下对水基本上是惰性的，以防止在氧化过程中固态材料的钝化。颗粒可以以受控的速率引入水或其它合适的氧化剂中以控制源材料与氧化剂的反应速率，从而控制氢的形成速率。描述了用于以不同重量百分比的源材料生成固体状混合物以防止钝化剂的方法。

2. 发明申请

US20090064922A1 Methods of hyperdoping semiconductor materials and hyperdoped semiconductor materials and devices 审中-公开
标题翻译：超掺杂半导体材料和超掺杂半导体材料和器件的方法
公开(公告)号：US20090064922A1
公开(公告)日：2009-03-12
申请号：US11708652
申请日：2007-02-20
申请人： Thomas D. Boone , Eric S. Harmon , Robert D. Koudelka , David B. Salzman , Jerry M. Woodall
发明人： Thomas D. Boone , Eric S. Harmon , Robert D. Koudelka , David B. Salzman , Jerry M. Woodall
IPC分类号： C30B15/14 , C30B23/02
CPC分类号： H01L33/025 , C30B23/02 , C30B25/02 , C30B29/40 , C30B29/403 , C30B29/406 , H01L21/02395 , H01L21/02538 , H01L21/02546 , H01L21/02573 , H01L21/02579 , H01L21/02631 , H01L29/207 , H01L29/36 , H01L29/66318 , H01L29/66462 , H01L29/66924 , H01L29/7371 , H01L29/7785 , H01L29/802
摘要： Methods are disclosed for producing highly doped semiconductor materials. Using the invention, one can achieve doping densities that exceed traditional, established carrier saturation limits without deleterious side effects. Additionally, highly doped semiconductor materials are disclosed, as well as improved electronic and optoelectronic devices/components using said materials. The innovative materials and processes enabled by the invention yield significant performance improvements and/or cost reductions for a wide variety of semiconductor-based microelectronic and optoelectronic devices/systems.Materials are grown in an anion-rich environment, which, in the preferred embodiment, are produced by moderate substrate temperatures during growth in an oxygen-poor environment. The materials exhibit fewer non-radiative recombination centers at higher doping concentrations than prior art materials, and the highly doped state of matter can exhibit a minority carrier lifetime dominated by radiative recombination at higher doping levels and higher majority carrier concentrations than achieved in prior art materials. Important applications enabled by these novel materials include high performance electronic or optoelectronic devices, which can be smaller and faster, yet still capture or emit light efficiently, and high performance electronics, such as transistors, which can be smaller and faster, yet cooler.
摘要翻译：公开了用于生产高掺杂半导体材料的方法。使用本发明，可以实现超过传统的已建立的载流子饱和极限而没有有害的副作用的掺杂密度。此外，公开了高度掺杂的半导体材料，以及使用所述材料的改进的电子和光电子器件/部件。通过本发明实现的创新材料和工艺为各种基于半导体的微电子和光电子器件/系统产生显着的性能改进和/或降低成本。材料在富含阴离子的环境中生长，在优选的实施方案中，其在贫氧环境中生长期间由适度的底物温度产生。与现有技术材料相比，这些材料在较高的掺杂浓度下表现出较少的非辐射复合中心，并且高度掺杂的物质状态可以表现出在较高的掺杂水平和较高的多数载流子浓度的情况下以辐射复合为主的少数载流子寿命，。这些新型材料所能实现的重要应用包括高性能电子或光电子器件，可以更小更快地捕获或发光，而高性能电子器件（如可以更小更快更冷却的晶体管）。

3. 发明授权

US07179329B2 Methods of hyperdoping semiconductor materials and hyperdoped semiconductor materials and devices 失效
标题翻译：超掺杂半导体材料和超掺杂半导体材料和器件的方法
公开(公告)号：US07179329B2
公开(公告)日：2007-02-20
申请号：US10277352
申请日：2002-10-22
申请人： Thomas Boone , Eric S. Harmon , Robert D. Koudelka , David B. Salzman , Jerry M. Woodall
发明人： Thomas Boone , Eric S. Harmon , Robert D. Koudelka , David B. Salzman , Jerry M. Woodall
IPC分类号： C30B9/00
CPC分类号： H01L33/025 , C30B23/02 , C30B25/02 , C30B29/40 , C30B29/403 , C30B29/406 , H01L21/02395 , H01L21/02538 , H01L21/02546 , H01L21/02573 , H01L21/02579 , H01L21/02631 , H01L29/207 , H01L29/36 , H01L29/66318 , H01L29/66462 , H01L29/66924 , H01L29/7371 , H01L29/7785 , H01L29/802
摘要： Methods are disclosed for producing highly doped semiconductor materials. Using the invention, one can achieve doping densities that exceed traditional, established carrier saturation limits without deleterious side effects. Additionally, highly doped semiconductor materials are disclosed, as well as improved electronic and optoelectronic devices/components using said materials. The innovative materials and processes enabled by the invention yield significant performance improvements and/or cost reductions for a wide variety of semiconductor-based microelectronic and optoelectronic devices/systems.Materials are grown in an anion-rich environment, which, in the preferred embodiment, are produced by moderate substrate temperatures during growth in an oxygen-poor environment. The materials exhibit fewer non-radiative recombination centers at higher doping concentrations than prior art materials, and the highly doped state of matter can exhibit a minority carrier lifetime dominated by radiative recombination at higher doping levels and higher majority carrier concentrations than achieved in prior art materials. Important applications enabled by these novel materials include high performance electronic or optoelectronic devices, which can be smaller and faster, yet still capture or emit light efficiently, and high performance electronics, such as transistors, which can be smaller and faster, yet cooler.
摘要翻译：公开了用于生产高掺杂半导体材料的方法。使用本发明，可以实现超过传统的已建立的载流子饱和极限而没有有害的副作用的掺杂密度。此外，公开了高度掺杂的半导体材料，以及使用所述材料的改进的电子和光电子器件/部件。通过本发明实现的创新材料和工艺为各种基于半导体的微电子和光电子器件/系统产生显着的性能改进和/或降低成本。材料在富含阴离子的环境中生长，在优选的实施方案中，其在贫氧环境中生长期间由适度的底物温度产生。与现有技术材料相比，这些材料在较高的掺杂浓度下表现出较少的非辐射复合中心，并且高度掺杂的物质状态可以表现出在较高的掺杂水平和较高的多数载流子浓度的情况下以辐射复合为主的少数载流子寿命，。这些新型材料所能实现的重要应用包括高性能电子或光电子器件，可以更小更快地捕获或发光，而高性能电子器件（如可以更小更快更冷却的晶体管）。

4. 发明申请

US20120085021A1 POWER GENERATION FROM SOLID ALUMINUM 审中-公开
标题翻译：从固体铝发电
公开(公告)号：US20120085021A1
公开(公告)日：2012-04-12
申请号：US13311674
申请日：2011-12-06
申请人： Jerry M. Woodall , Charles R. Allen , Jeffrey T. Ziebarth
发明人： Jerry M. Woodall , Charles R. Allen , Jeffrey T. Ziebarth
IPC分类号： C10L5/40
CPC分类号： C01B3/08 , C10L5/00 , C22C21/00 , C22C28/00 , Y02E50/30 , Y02E60/36
摘要： A fuel for splitting water into hydrogen and an oxide component comprises a substantially solid pellet formed from a solid-like mixture of a solid-state source material capable of oxidizing in water to form hydrogen and a passivation surface layer of the oxide component, and a passivation preventing agent that is substantially inert to water in an effective amount to prevent passivation of the solid-state material during oxidation. The pellets are brought into contact with an alloy of the passivation preventing agent having a melting point temperature below that of the solid-like mixture to initiate the hydrogen-producing reaction at a lower temperature.
摘要翻译：用于将水分解成氢气和氧化物组分的燃料包括由能够在水中氧化形成氢气的固态源材料的固体状混合物形成的基本上固体的颗粒和氧化物组分的钝化表面层，钝化防止剂，其在有效量下对水基本上是惰性的，以防止在氧化过程中固态材料的钝化。使颗粒与熔点温度低于固体混合物的钝化防止剂的合金接触，以在较低温度下引发产氢反应。

5. 发明授权

US08080233B2 Power generation from solid aluminum 有权
标题翻译：固体铝发电
公开(公告)号：US08080233B2
公开(公告)日：2011-12-20
申请号：US11850457
申请日：2007-09-05
申请人： Jerry M. Woodall , Charles R. Allen , Jeffrey T. Ziebarth
发明人： Jerry M. Woodall , Charles R. Allen , Jeffrey T. Ziebarth
IPC分类号： C01B3/08
CPC分类号： C01B3/08 , C10L5/00 , C22C21/00 , C22C28/00 , Y02E50/30 , Y02E60/36
摘要： A fuel for splitting water into hydrogen and an oxide component comprises a substantially solid pellet formed from a solid-like mixture of a solid-state source material capable of oxidizing in water to form hydrogen and a passivation surface layer of the oxide component, and a passivation preventing agent that is substantially inert to water in an effective amount to prevent passivation of the solid-state material during oxidation. The pellets are brought into contact with an alloy of the passivation preventing agent having a melting point temperature below that of the solid-like mixture to initiate the hydrogen-producing reaction at a lower temperature.
摘要翻译：用于将水分解成氢气和氧化物组分的燃料包括由能够在水中氧化形成氢气的固态源材料的固体状混合物形成的基本上固体的颗粒和氧化物组分的钝化表面层，钝化防止剂，其在有效量下对水基本上是惰性的，以防止在氧化过程中固态材料的钝化。使颗粒与熔点温度低于固体混合物的钝化防止剂的合金接触，以在较低温度下引发产氢反应。

6. 发明授权

US5508829A LTG AlGaAs non-linear optical material and devices fabricated therefrom 失效
标题翻译： LTG AlGaAs非线性光学材料及其制造的器件
公开(公告)号：US5508829A
公开(公告)日：1996-04-16
申请号：US264177
申请日：1994-06-22
申请人： John L. Freeouf , Rodney T. Hodgson , Peter D. Kirchner , Michael R. Melloch , Jerry M. Woodall , David D. Nolte
发明人： John L. Freeouf , Rodney T. Hodgson , Peter D. Kirchner , Michael R. Melloch , Jerry M. Woodall , David D. Nolte
IPC分类号： G02F1/355 , G02F1/015 , G02F1/35 , H01L31/0232
CPC分类号： G02F1/3551 , G02F2202/101 , G03H2001/0264
摘要： A light responsive device (10) has a body (12) that includes a matrix comprised of Group III-V material, the matrix having inclusions (14) comprised of a Group V material contained therein. The body is responsive to a presence of a light beam that has a spatially varying intensity for modifying in a corresponding spatially varying manner a distribution of trapped photoexcited charge carriers within the body. The distribution of trapped charge carriers induces a corresponding spatial variation in at least one optical property of the Group III-V material, such as the index of refraction of the Group III-V material and/or an absorption coefficient of the Group III-V material. The Group III-V material is comprised of LTG GaAs:As or LTG AlGaAs:As. In an optical storage medium embodiment of the invention the spatial variation in the intensity of the light beam results from a simultaneous application of a first light beam (LB1) and a second light beam (LB2) to the body, and from interference fringes resulting from an intersection of said first and second light beams.
摘要翻译：光响应装置（10）具有主体（12），其包括由III-V族材料构成的基体，所述基体具有由其中所含的V族材料构成的夹杂物（14）。身体响应于存在具有空间变化的强度的光束，以便以对应的空间变化的方式修改被俘获的光激发电荷载体在体内的分布。捕获的电荷载体的分布在III-V族材料的至少一种光学性质中引起相应的空间变化，例如III-V族材料的折射率和/或III-V族的吸收系数材料。 III-V族材料由LTG GaAs：As或LTG AlGaAs：As组成。在本发明的光学存储介质的实施例中，光束的强度的空间变化是由于将第一光束（LB1）和第二光束（LB2）同时施加到主体，并且由干涉条纹所述第一和第二光束的交叉。

7. 发明授权

US5132746A Biaxial-stress barrier shifts in pseudomorphic tunnel devices 失效
标题翻译： PSEUDMORPHIC隧道设备中的双向应力障碍物移位
公开(公告)号：US5132746A
公开(公告)日：1992-07-21
申请号：US637397
申请日：1991-01-04
申请人： Emilio E. Mendez , Theoren P. Smith, III , Jerry M. Woodall
发明人： Emilio E. Mendez , Theoren P. Smith, III , Jerry M. Woodall
IPC分类号： H01L29/205 , H01L29/12 , H01L29/737 , H01L29/76 , H01L29/88 , H01L31/10
CPC分类号： B82Y10/00 , H01L29/122 , H01L29/7376 , H01L29/7606
摘要： Resonant tunneling devices having improved peak-to-valley current ratios are disclosed. The resonant tunneling device comprises a quantum well layer surrounded by first and second barrier layers, the first and second barrier layers being comprised of an indirect first III-V compound semiconductor. The first barrier layer being formed on a substrate of a second III-V compound semiconductor having a lattice constant larger than the lattice constant of the first barrier layer thereby inducing a biaxial stress in the first barrier layer. The biaxial stress results in an energy shift at resonance that increases the peak to valley current ratio of the device.

8. 发明授权

US4920069A Submicron dimension compound semiconductor fabrication using thermal etching 失效
标题翻译：亚微米尺寸化学半导体制造采用热蚀刻
公开(公告)号：US4920069A
公开(公告)日：1990-04-24
申请号：US183489
申请日：1988-04-15
申请人： Eric R. Fossum , Peter D. Kirchner , George D. Pettit , Alan C. Warren , Jerry M. Woodall
发明人： Eric R. Fossum , Peter D. Kirchner , George D. Pettit , Alan C. Warren , Jerry M. Woodall
IPC分类号： H01L21/20 , H01L21/263
CPC分类号： H01L21/2633 , H01L21/02395 , H01L21/02543 , H01L21/02546 , H01L21/02639 , Y10S148/017 , Y10S148/05 , Y10S148/065 , Y10S148/135 , Y10S148/169
摘要： Submicron structure fabrication is accomplished by providing vapor chemical erosion of a compound crystal by suppressing the more volatile elements so that the less volatile element is provided with an anti-agglomeration and erosion rate limiting capability which can be followed by subsequent regrowth in the same environment. The erosion is sensitive to crystallographic orientation.
摘要翻译：亚微米结构的制造是通过抑制更多的挥发性元素来提供化合物晶体的蒸汽化学腐蚀来实现的，从而使挥发性较低的元件具有抗附聚和侵蚀速率限制能力，随后可以在相同的环境中随后再生长。侵蚀对晶体取向敏感。

9. 发明授权

US4807006A Heterojunction interdigitated schottky barrier photodetector 失效
标题翻译：异质结交叉肖特基势垒光电探测器
公开(公告)号：US4807006A
公开(公告)日：1989-02-21
申请号：US64186
申请日：1987-06-19
申请人： Dennis L. Rogers , Jerry M. Woodall , George D. Pettit , David T. McInturff
发明人： Dennis L. Rogers , Jerry M. Woodall , George D. Pettit , David T. McInturff
IPC分类号： H01L31/09 , G01J1/02 , H01L31/00 , H01L31/0304 , H01L31/108 , H01L31/109 , H01L27/14
CPC分类号： H01L31/03046 , H01L31/1085 , H01L31/109 , Y02E10/544 , Y02P70/521
摘要： A semiconductor photodetector is formed of interdigitated, metal-semiconductor-metal electrodes disposed on a surface of semi-insulating semiconductor material, gallium arsenide. Radiation such as infra-red or visible light is converted to an electric current flowing between the electrodes upon application of a bias voltage between the electrodes. A Schottky barrier at the junction of each electrode surface and the semiconductor surface limits current flow to that produced by photons. Tunneling of charge carriers of the current under the Schottky barrier, which tunneling results from the entrapment of charge carriers on the semiconductor surface, is inhibited by the production of a heterojunction surface layer upon the foregoing surface between the electrodes to repulse the charge carriers and prevent their entrapment at the surface. The heterojunction layer may be doped to enhance the repulsion of charge carriers. The heterojunction surface layer is of sufficient thickness to prevent tunneling of photogenerated carriers to a noncontacted region of the surface of the heterojunction layer and to also permit efficient repulsion of charge carriers from the surface. Longer wavelength photodetectors may also be formed in this way by providing misfit dislocation regions between the interaction region, which may be GaInAs, and a GaAs substrate, thereby providing a pseudo-morphic interaction region which is graded back to a heterojunction layer at the surface.

10. 发明授权

US4757369A Group III-V semiconductor electrical contact 失效
标题翻译： III-V族半导体电接触
公开(公告)号：US4757369A
公开(公告)日：1988-07-12
申请号：US60700
申请日：1987-06-10
申请人： Thomas N. Jackson , Peter D. Kirchner , George D. Pettit , Richard F. Rutz , Jerry M. Woodall
发明人： Thomas N. Jackson , Peter D. Kirchner , George D. Pettit , Richard F. Rutz , Jerry M. Woodall
IPC分类号： H01L21/338 , H01L21/28 , H01L21/285 , H01L29/41 , H01L29/43 , H01L29/45 , H01L29/80 , H01L29/812 , H01L29/167 , H01L23/48 , H01L29/161 , H01L29/62
CPC分类号： H01L21/28581 , H01L21/28575 , H01L29/452
摘要： A layer of an amphoteric dopant on the surface of a group III-V intermetallic semiconductor crystal will diffuse into the crystal surface in a heating cycle forming a stable contact. The contact can be ohmic or rectifying depending on the localized presence of an excess of one crystal ingredient. A layer of Si on GaAs upon heating forms a rectifying contact. When the layer of Si contains As, the contact is ohmic.
摘要翻译：在III-V族金属间半导体晶体表面上的两性掺杂剂层将在形成稳定接触的加热循环中扩散到晶体表面。接触可以是欧姆的或整流的，这取决于过量的一种晶体成分的局部存在。在加热时GaAs上的Si层形成整流接触。当Si层含有As时，接触是欧姆的。

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