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    • 1. 发明授权
    • Methods of hyperdoping semiconductor materials and hyperdoped semiconductor materials and devices
    • 超掺杂半导体材料和超掺杂半导体材料和器件的方法
    • US07179329B2
    • 2007-02-20
    • US10277352
    • 2002-10-22
    • Thomas BooneEric S. HarmonRobert D. KoudelkaDavid B. SalzmanJerry M. Woodall
    • Thomas BooneEric S. HarmonRobert D. KoudelkaDavid B. SalzmanJerry M. Woodall
    • C30B9/00
    • H01L33/025C30B23/02C30B25/02C30B29/40C30B29/403C30B29/406H01L21/02395H01L21/02538H01L21/02546H01L21/02573H01L21/02579H01L21/02631H01L29/207H01L29/36H01L29/66318H01L29/66462H01L29/66924H01L29/7371H01L29/7785H01L29/802
    • Methods are disclosed for producing highly doped semiconductor materials. Using the invention, one can achieve doping densities that exceed traditional, established carrier saturation limits without deleterious side effects. Additionally, highly doped semiconductor materials are disclosed, as well as improved electronic and optoelectronic devices/components using said materials. The innovative materials and processes enabled by the invention yield significant performance improvements and/or cost reductions for a wide variety of semiconductor-based microelectronic and optoelectronic devices/systems.Materials are grown in an anion-rich environment, which, in the preferred embodiment, are produced by moderate substrate temperatures during growth in an oxygen-poor environment. The materials exhibit fewer non-radiative recombination centers at higher doping concentrations than prior art materials, and the highly doped state of matter can exhibit a minority carrier lifetime dominated by radiative recombination at higher doping levels and higher majority carrier concentrations than achieved in prior art materials. Important applications enabled by these novel materials include high performance electronic or optoelectronic devices, which can be smaller and faster, yet still capture or emit light efficiently, and high performance electronics, such as transistors, which can be smaller and faster, yet cooler.
    • 公开了用于生产高掺杂半导体材料的方法。 使用本发明,可以实现超过传统的已建立的载流子饱和极限而没有有害的副作用的掺杂密度。 此外,公开了高度掺杂的半导体材料,以及使用所述材料的改进的电子和光电子器件/部件。 通过本发明实现的创新材料和工艺为各种基于半导体的微电子和光电子器件/系统产生显着的性能改进和/或降低成本。 材料在富含阴离子的环境中生长,在优选的实施方案中,其在贫氧环境中生长期间由适度的底物温度产生。 与现有技术材料相比,这些材料在较高的掺杂浓度下表现出较少的非辐射复合中心,并且高度掺杂的物质状态可以表现出在较高的掺杂水平和较高的多数载流子浓度的情况下以辐射复合为主的少数载流子寿命, 。 这些新型材料所能实现的重要应用包括高性能电子或光电子器件,可以更小更快地捕获或发光,而高性能电子器件(如可以更小更快更冷却的晶体管)。
    • 2. 发明申请
    • Methods of hyperdoping semiconductor materials and hyperdoped semiconductor materials and devices
    • 超掺杂半导体材料和超掺杂半导体材料和器件的方法
    • US20090064922A1
    • 2009-03-12
    • US11708652
    • 2007-02-20
    • Thomas D. BooneEric S. HarmonRobert D. KoudelkaDavid B. SalzmanJerry M. Woodall
    • Thomas D. BooneEric S. HarmonRobert D. KoudelkaDavid B. SalzmanJerry M. Woodall
    • C30B15/14C30B23/02
    • H01L33/025C30B23/02C30B25/02C30B29/40C30B29/403C30B29/406H01L21/02395H01L21/02538H01L21/02546H01L21/02573H01L21/02579H01L21/02631H01L29/207H01L29/36H01L29/66318H01L29/66462H01L29/66924H01L29/7371H01L29/7785H01L29/802
    • Methods are disclosed for producing highly doped semiconductor materials. Using the invention, one can achieve doping densities that exceed traditional, established carrier saturation limits without deleterious side effects. Additionally, highly doped semiconductor materials are disclosed, as well as improved electronic and optoelectronic devices/components using said materials. The innovative materials and processes enabled by the invention yield significant performance improvements and/or cost reductions for a wide variety of semiconductor-based microelectronic and optoelectronic devices/systems.Materials are grown in an anion-rich environment, which, in the preferred embodiment, are produced by moderate substrate temperatures during growth in an oxygen-poor environment. The materials exhibit fewer non-radiative recombination centers at higher doping concentrations than prior art materials, and the highly doped state of matter can exhibit a minority carrier lifetime dominated by radiative recombination at higher doping levels and higher majority carrier concentrations than achieved in prior art materials. Important applications enabled by these novel materials include high performance electronic or optoelectronic devices, which can be smaller and faster, yet still capture or emit light efficiently, and high performance electronics, such as transistors, which can be smaller and faster, yet cooler.
    • 公开了用于生产高掺杂半导体材料的方法。 使用本发明,可以实现超过传统的已建立的载流子饱和极限而没有有害的副作用的掺杂密度。 此外,公开了高度掺杂的半导体材料,以及使用所述材料的改进的电子和光电子器件/部件。 通过本发明实现的创新材料和工艺为各种基于半导体的微电子和光电子器件/系统产生显着的性能改进和/或降低成本。 材料在富含阴离子的环境中生长,在优选的实施方案中,其在贫氧环境中生长期间由适度的底物温度产生。 与现有技术材料相比,这些材料在较高的掺杂浓度下表现出较少的非辐射复合中心,并且高度掺杂的物质状态可以表现出在较高的掺杂水平和较高的多数载流子浓度的情况下以辐射复合为主的少数载流子寿命, 。 这些新型材料所能实现的重要应用包括高性能电子或光电子器件,可以更小更快地捕获或发光,而高性能电子器件(如可以更小更快更冷却的晶体管)。
    • 3. 发明授权
    • High modulation frequency light emitting device exhibiting spatial relocation of minority carriers to a non-radiative recombination region
    • 显示了将少数载流子空间重定位到非辐射复合区域的高调制频率发光器件
    • US06607932B2
    • 2003-08-19
    • US10229809
    • 2002-08-28
    • Jerry M. WoodallRobert D. Koudelka
    • Jerry M. WoodallRobert D. Koudelka
    • H01L2100
    • H01L33/02B82Y10/00B82Y20/00H01S5/041H01S5/2009
    • A light emitting device providing a first part that includes a source of excess minority carriers including excess electron-hole pairs; a second part, coupled to the first part, that includes a minority carrier barrier; and a third part, coupled to the second part, that includes a region that exhibits a low radiative recombination efficiency and a short minority carrier lifetime. In response to a first stimulus minority carriers are constrained by the second part to remain in the first part, leading to an increase of minority carrier radiative recombination in the first part and an increase in light emission; while in response to a second stimulus the minority carriers are enabled to cross the minority carrier barrier of the second part to enter the third part, leading to a decrease of minority carrier radiative recombination in the first part and a decrease in light emission.
    • 一种提供第一部分的发光器件,该第一部分包括包含多余电子 - 空穴对的过剩少数载流子源; 第二部分,包括第一部分,包括少数载体障碍; 以及耦合到第二部分的第三部分,其包括呈现低辐射复合效率和少量载流子寿命的区域。 响应于第一次刺激,少数载流子被第二部分约束,保留在第一部分,导致第一部分少数载流子辐射复合增加,光发射增加; 而响应于第二次刺激,少数载流子能够跨越第二部分的少数载流子势垒进入第三部分,导致第一部分中少数载流子辐射复合的减少和光发射的减少。
    • 4. 发明授权
    • High modulation frequency light emitting device exhibiting spatial relocation of minority carriers to a non-radiative recombination region
    • US06448582B1
    • 2002-09-10
    • US09666231
    • 2000-09-21
    • Jerry M. WoodallRobert D. Koudelka
    • Jerry M. WoodallRobert D. Koudelka
    • H01L2715
    • H01L33/02B82Y10/00B82Y20/00H01S5/041H01S5/2009
    • A light emitting device is constructed so as to provide a first part that includes a source of excess minority carriers including excess electron-hole pairs; a second part, coupled to the first part, that includes a minority carrier barrier; and a third part, coupled to the second part, that includes a region that exhibits a low radiative recombination efficiency and a short minority carrier lifetime. In response to a first stimulus minority carriers are constrained by the second part to remain in the first part, leading to an increase of minority carrier radiative recombination in the first part and an increase in light emission; while in response to a second stimulus the minority carriers are enabled to cross the minority carrier barrier of the second part to enter the third part, leading to a decrease of minority carrier radiative recombination in the first part and a decrease in light emission. In certain embodiments the first stimulus includes an absence of an electrical signal applied between the second part and the third part, and the second stimulus comprises a presence of the electrical signal applied between the second part and the third part. In other embodiments the first stimulus includes a change in an electric field in the second part that is generated by optically induced electron-hole pairs in the second part, and the second stimulus includes an absence of the change in the electric field. In another embodiment the reverse is true. In certain embodiments the first or second stimulus can be the presence of modulating light incident on the second part and a resultant decrease in band bending. The first part can include, by example, a light emitting diode, a laser diode, a resonant cavity LED, or a vertical cavity surface emitting laser device. In another, all optical embodiment the first part includes a material that, in response to optical pumping, provides a photoluminescent emission. The second part can include a resonant tunneling structure or a potential barrier structure formed by compositional grading or impurity concentration grading. The third part can include a low temperature grown material and/or a Schottky barrier contact. It is shown that embodiments of this invention are capable of exhibiting optical gain, and an optical semiconductor light emitting device with optical gain (SLEDOG) is thus made possible.