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    • 6. 发明授权
    • Circuit method for reducing parasitic bipolar effects during electrostatic discharges
    • 静电放电时减少寄生双极效应的电路方法
    • US06373104B1
    • 2002-04-16
    • US09559354
    • 2000-04-27
    • Jeremy C. Smith
    • Jeremy C. Smith
    • H01L2972
    • H01L27/0277H01L27/0251
    • A semiconductor device include a current source having a first node coupled to a first voltage reference node, and a second node for extracting a current in response to an electrostatic discharge (ESD) on a terminal. The device further includes a transistor having a well and a control electrode, a first current electrode coupled to a second voltage reference node, and a second current electrode coupled to the second node of the current source, and includes a resistive element is coupled to the terminal and the second node of the current source. The transistor of the semiconductor device is biased by detecting a positive voltage event (such as an ESD) at the first current electrode of the transistor, and biasing the first current electrode of the transistor in response to detecting the positive voltage event, wherein the biasing of the first current electrode is for preventing a forward biasing of an n-p junction associated with the transistor.
    • 半导体器件包括具有耦合到第一电压参考节点的第一节点的电流源和用于响应于终端上的静电放电(ESD))提取电流的第二节点。 该器件还包括晶体管,其具有阱和控制电极,耦合到第二电压参考节点的第一电流电极和耦合到电流源的第二节点的第二电流电极,并且包括电阻元件耦合到 终端和当前源的第二个节点。 通过检测晶体管的第一电流电极处的正电压事件(例如ESD)来偏置半导体器件的晶体管,并且响应于检测到正电压事件而偏置晶体管的第一电流电极,其中偏置 的第一电流电极用于防止与晶体管相关联的np结的正向偏置。
    • 10. 发明授权
    • Circuit and method for reducing parasitic bipolar effects during eletrostatic discharges
    • 用于减少静电放电期间寄生双极效应的电路和方法
    • US06329692B1
    • 2001-12-11
    • US09201392
    • 1998-11-30
    • Jeremy C. Smith
    • Jeremy C. Smith
    • H01L2972
    • H01L27/0277H01L27/0251
    • A circuit (20) includes a resistor (26) and a current source (32) for raising the voltage of the source of the N-channel transistor in order to keep the base-emitter voltage of the parasitic bipolar device from forward biasing to prevent conduction in the parasitic bipolar device. In one embodiment, a relatively small resistor (26) is coupled between the source of an N-channel transistor (24) and ground. The current source (32) is used to direct some of the ESD current from a positive ESD event through the small source resistor (26) so that the source of the N-channel transistor (24) is elevated during the event, thus preventing snapback of the parasitic bipolar device.
    • 电路(20)包括用于提高N沟道晶体管的源极的电压(26)和电流源(32),以便保持寄生双极型器件的基极 - 发射极电压不被正向偏置以防止 寄生双极器件中的导通。 在一个实施例中,相对小的电阻器(26)耦合在N沟道晶体管(24)的源极和地之间。 电流源(32)用于将来自正的ESD事件的一些ESD电流引导通过小的源极电阻(26),使得N沟道晶体管(24)的源在事件期间升高,从而防止突发 的寄生双极器件。