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1. 发明申请

US20050026420A1 Method of manufacturing a semiconductor device using a polysilicon etching mask 失效
标题翻译：使用多晶硅蚀刻掩模制造半导体器件的方法
公开(公告)号：US20050026420A1
公开(公告)日：2005-02-03
申请号：US10818266
申请日：2004-04-02
申请人： Jeong-Nam Han , Woo-Gwan Shim , Woo-Sung Han , Chang-Ki Hong , Sang-Jun Choi
发明人： Jeong-Nam Han , Woo-Gwan Shim , Woo-Sung Han , Chang-Ki Hong , Sang-Jun Choi
IPC分类号： H01L21/28 , H01L21/311 , H01L21/3213 , H01L21/60 , H01L21/768 , H01L23/485 , H01L21/44 , H01L21/50 , H01L21/8222
CPC分类号： H01L21/76897 , H01L21/31144 , H01L21/32134 , H01L21/32137 , H01L21/76802 , H01L23/485 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a semiconductor device using a polysilicon layer as an etching mask includes: (a) forming an interlayer dielectric over a semiconductor substrate; (b) forming a polysilicon layer pattern over the interlayer dielectric; (c) forming a contact hole in the interlayer dielectric by etching the interlayer dielectric using the polysilicon layer pattern as an etching mask; (d) removing the polysilicon layer pattern by an etching process that has a large etching selectivity of the polisilicon layer with respect to the interlayer dielectric and about 3% or less etching uniformity; and (e) forming a contact by filling the contact hole with a conductive material.
摘要翻译：使用多晶硅层作为蚀刻掩模制造半导体器件的方法包括：（a）在半导体衬底上形成层间电介质; （b）在层间电介质上形成多晶硅层图案; （c）通过使用多晶硅层图案作为蚀刻掩模蚀刻层间电介质，在层间电介质中形成接触孔; （d）通过蚀刻工艺去除多晶硅层图案，所述蚀刻工艺对于硅酸盐层相对于层间电介质具有大的蚀刻选择性，蚀刻均匀性为约3％以下; 和（e）通过用导电材料填充接触孔来形成接触。

2. 发明授权

US07122478B2 Method of manufacturing a semiconductor device using a polysilicon etching mask 失效
标题翻译：使用多晶硅蚀刻掩模制造半导体器件的方法
公开(公告)号：US07122478B2
公开(公告)日：2006-10-17
申请号：US10818266
申请日：2004-04-02
申请人： Jeong-Nam Han , Woo-Gwan Shim , Woo-Sung Han , Chang-Ki Hong , Sang Jun Choi
发明人： Jeong-Nam Han , Woo-Gwan Shim , Woo-Sung Han , Chang-Ki Hong , Sang Jun Choi
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/76897 , H01L21/31144 , H01L21/32134 , H01L21/32137 , H01L21/76802 , H01L23/485 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a semiconductor device using a polysilicon layer as an etching mask includes: (a) forming an interlayer dielectric over a semiconductor substrate; (b) forming a polysilicon layer pattern over the interlayer dielectric; (c) forming a contact hole in the interlayer dielectric by etching the interlayer dielectric using the polysilicon layer pattern as an etching mask; (d) removing the polysilicon layer pattern by an etching process that has a large etching selectivity of the polisilicon layer with respect to the interlayer dielectric and about 3% or less etching uniformity; and (e) forming a contact by filling the contact hole with a conductive material.
摘要翻译：使用多晶硅层作为蚀刻掩模制造半导体器件的方法包括：（a）在半导体衬底上形成层间电介质; （b）在层间电介质上形成多晶硅层图案; （c）通过使用多晶硅层图案作为蚀刻掩模蚀刻层间电介质，在层间电介质中形成接触孔; （d）通过蚀刻工艺去除多晶硅层图案，所述蚀刻工艺对于硅酸盐层相对于层间电介质具有大的蚀刻选择性，蚀刻均匀性为约3％以下; 和（e）通过用导电材料填充接触孔来形成接触。

3. 发明授权

US07309683B2 Cleaning composition and method of cleaning a semiconductor device using the same 有权
标题翻译：使用该半导体器件的清洁组合物和清洁半导体器件的方法
公开(公告)号：US07309683B2
公开(公告)日：2007-12-18
申请号：US11038585
申请日：2005-01-19
申请人： Chang-Sup Mun , Chang-Ki Hong , Sang-Jun Choi , Woo-Sung Han
发明人： Chang-Sup Mun , Chang-Ki Hong , Sang-Jun Choi , Woo-Sung Han
IPC分类号： C11D1/12
CPC分类号： H01L21/02071 , C11D1/146 , C11D3/0073 , C11D3/2031 , C11D3/2055 , C11D3/3409 , C11D3/3427 , C11D11/0047
摘要： A cleaning composition comprises an alkali solution, pure water, and a surfactant represented by the following chemical formula: R1-OSO3—HA+ wherein R1 is one selected from a group consisting of a butyl group, an isobutyl group, an isooctyl group, a nonyl phenyl group, an octyl phenyl group, a decyl group, a tridecyl group, a lauryl group, a myristyl group, a cetyl group, a stearyl group, an oleyl group, a licenoleyl group and a behnyl group, and A is one selected from a group consisting of ammonia, ethanol amine, diethanol amine and triethanol amine.
摘要翻译：清洁组合物包含碱溶液，纯水和由以下化学式表示的表面活性剂：其中R 1是选自下列化学式的一种：由丁基，异丁基，异辛基，壬基苯基，辛基苯基，癸基，十三烷基，月桂基，肉豆蔻基，鲸蜡基，硬脂基，油基基团，丙烯酰基和苯丙基，A是选自氨，乙醇胺，二乙醇胺和三乙醇胺中的一种。

4. 发明申请

US20050170981A1 Cleaning composition and method of cleaning a semiconductor device using the same 有权
标题翻译：使用该半导体器件的清洁组合物和清洁半导体器件的方法
公开(公告)号：US20050170981A1
公开(公告)日：2005-08-04
申请号：US11038585
申请日：2005-01-19
申请人： Chang-Sup Mun , Chang-Ki Hong , Sang-Jun Choi , Woo-Sung Han
发明人： Chang-Sup Mun , Chang-Ki Hong , Sang-Jun Choi , Woo-Sung Han
IPC分类号： C11D1/12 , C11D1/14 , C11D3/00 , C11D3/20 , C11D3/34 , C11D11/00 , C11D1/00
CPC分类号： H01L21/02071 , C11D1/146 , C11D3/0073 , C11D3/2031 , C11D3/2055 , C11D3/3409 , C11D3/3427 , C11D11/0047
摘要： A cleaning composition comprises an alkali solution, pure water, and a surfactant represented by the following chemical formula: R1-OSO3—HA+ wherein R1 is one selected from a group consisting of a butyl group, an isobutyl group, an isooctyl group, a nonyl phenyl group, an octyl phenyl group, a decyl group, a tridecyl group, a lauryl group, a myristyl group, a cetyl group, a stearyl group, an oleyl group, a licenoleyl group and a behnyl group, and A is one selected from a group consisting of ammonia, ethanol amine, diethanol amine and triethanol amine.
摘要翻译：清洁组合物包含碱溶液，纯水和由以下化学式表示的表面活性剂：其中R 1是选自下列化学式的一种：由丁基，异丁基，异辛基，壬基苯基，辛基苯基，癸基，十三烷基，月桂基，肉豆蔻基，十六烷基，硬脂基，油基基团，丙烯酰基和苯丙基，A是选自氨，乙醇胺，二乙醇胺和三乙醇胺中的一种。

5. 发明授权

US09119304B2 Light emitting device including a light emitting element mounted on a sub-mount 有权
标题翻译：发光装置，其包括安装在副安装座上的发光元件
公开(公告)号：US09119304B2
公开(公告)日：2015-08-25
申请号：US13566291
申请日：2012-08-03
申请人： Yu-Sik Kim , Woo-Sung Han
发明人： Yu-Sik Kim , Woo-Sung Han
IPC分类号： H05K1/11 , H05K1/14 , H05K1/02 , H01L25/075
CPC分类号： H05K1/0295 , H01L25/0753 , H01L2224/16225 , H05K2201/09227 , H05K2201/09254 , H05K2201/09318 , H05K2201/0949 , H05K2201/09663 , H05K2201/09954 , H05K2201/10106 , H05K2203/173
摘要： A sub-mount adapted for AC and DC operation of devices mountable thereon, light emitting devices including such a sub-mount, and methods of manufacturing such a sub-mount are provided. The sub-mount includes a base substrate having first and second surfaces, a conductive pattern on the first surface, first and second pairs of first and second electrodes on the second surface and vias extending through the base substrate between the first and second surfaces. The conductive pattern includes a first set of mounting portions and two via portions along a first electrical path between the first pair of first and second electrodes, and a second set of mounting portions and two via portions along a second electrical path between the second pair of first and second electrodes, the via portions connecting respective portions of the conductive pattern to respective electrodes.
摘要翻译：提供一种适用于可安装在其上的设备的AC和DC操作的子座，包括这种子座的发光设备以及制造这种子座的方法。子座包括具有第一表面和第二表面的基底基底，第一表面上的导电图案，第二表面上的第一和第二对第一和第二电极以及在第一和第二表面之间延伸穿过基底的通孔。导电图案包括第一组安装部分和沿着第一对第一和第二电极之间的第一电路径的两个通孔部分，以及第二组安装部分和沿第二电路的第二组电路之间的两个通孔部分第一和第二电极，通孔部分将导电图案的各个部分连接到相应的电极。

6. 发明申请

US20050083518A1 Mask for use in measuring flare, method of manufacturing the mask, method of identifying flare-affected region on wafer, and method of designing new mask to correct for flare 有权
标题翻译：用于测量火炬的掩模，制造掩模的方法，识别晶片上的闪光影响区域的方法以及设计新的掩模以校正闪光的方法
公开(公告)号：US20050083518A1
公开(公告)日：2005-04-21
申请号：US10974950
申请日：2004-10-28
申请人： Won-Tai Ki , Seong-Woon Choi , Tae-Moon Jeong , Shun-Yong Zinn , Woo-Sung Han , Jung-Min Sohn
发明人： Won-Tai Ki , Seong-Woon Choi , Tae-Moon Jeong , Shun-Yong Zinn , Woo-Sung Han , Jung-Min Sohn
IPC分类号： G03F1/14 , G03F7/20 , G01N21/00
CPC分类号： G03F7/70591 , G03F1/44 , G03F1/70 , G03F7/70941
摘要： A mask for use in measuring flare produced by a projection lens of a photolithography system, a method of manufacturing the mask, a method of identifying a flare-affected region on a wafer, and a method for correcting for the flare to produce photoresist patterns of desired line widths are provided. A first photolithographic process is performed to form photoresist patterns on a test wafer using a mask including a light shielding region having a plurality of light transmission patterns and a light transmission region, and the photoresist patterns formed by light passing through the light transmission patterns of the light shielding region are compared to the photoresist patterns formed by light passing through the light transmission region. The amount of flare produced by the projection lens is quantified using the results of the comparison, and thus it is possible to identify a flare-affected region on the wafer. In addition, it is possible to form uniform photoresist patterns on the wafer by determining the open ratio of the flare-affected region and calculating an effective amount of the flare in the flare-affected region from the amount of flare of the lens and the open ratio. More specifically, a mask is produced in which the line widths of mask patterns are configured, i.e., corrected compared to the first mask, taking into consideration the effective amount of the flare.
摘要翻译：用于测量由光刻系统的投影透镜产生的闪光的掩模，掩模的制造方法，识别晶片上的火炬区域的方法，以及用于校正光斑以产生光致抗蚀剂图案的方法提供所需的线宽。执行第一光刻工艺以使用包括具有多个透光图案和光透射区域的遮光区域的掩模在测试晶片上形成光致抗蚀剂图案，并且由穿过光传输图案的光形成的光致抗蚀剂图案将光屏蔽区域与通过光透射区域的光形成的光致抗蚀剂图案进行比较。使用比较结果来量化由投影透镜产生的闪光量，因此可以识别晶片上的闪光影响区域。此外，可以通过确定闪光影响区域的开放比率并且从透镜的闪光量和开口的量来计算火炬影响区域中的闪光的有效量，从而在晶片上形成均匀的光致抗蚀剂图案比。更具体地，考虑到闪光灯的有效量，产生掩模图案的线宽被配置的掩模，即与第一掩模相比校正的掩模。

7. 发明授权

US08238112B2 Sub-mount, light emitting device including sub-mount and methods of manufacturing such sub-mount and/or light emitting device 有权
标题翻译：子安装式发光器件，包括副安装座以及制造这种子座和/或发光器件的方法
公开(公告)号：US08238112B2
公开(公告)日：2012-08-07
申请号：US12457803
申请日：2009-06-22
申请人： Yu-Sik Kim , Woo-Sung Han
发明人： Yu-Sik Kim , Woo-Sung Han
IPC分类号： H05K1/18
CPC分类号： H05K1/0295 , H01L25/0753 , H01L2224/16225 , H05K2201/09227 , H05K2201/09254 , H05K2201/09318 , H05K2201/0949 , H05K2201/09663 , H05K2201/09954 , H05K2201/10106 , H05K2203/173
摘要： A sub-mount adapted for AC and DC operation of devices mountable thereon, light emitting devices including such a sub-mount, and methods of manufacturing such a sub-mount are provided. The sub-mount including a base substrate including a first surface and a second surface different from the first surface, a conductive pattern on the first surface, a first pair and a second pair of first and second electrodes on the second surface, and vias extending through the base substrate between the first and second surfaces, wherein the conductive pattern includes a first set of mounting portions and two via portions along a first electrical path between the first pair of first and second electrodes, and a second set of mounting portions and two via portions along a second electrical path between the second pair of first and second electrodes, the via portions connecting respective portions of the conductive pattern to respective electrodes of the first and second pair of first and second electrodes through the vias.
摘要翻译：提供一种适用于可安装在其上的设备的AC和DC操作的子座，包括这种子座的发光设备以及制造这种子座的方法。所述子安装件包括基底，所述基底包括第一表面和与所述第一表面不同的第二表面，所述第一表面上的导电图案，所述第二表面上的第一对和第二对第一和第二电极，以及通孔延伸通过第一和第二表面之间的基底衬底，其中导电图案包括第一组安装部分和沿着第一对第一和第二电极之间的第一电路径的两个通孔部分，以及第二组安装部分和两个通过部分沿着第二对第一和第二电极之间的第二电路径，通孔部分将导电图案的相应部分连接到通过通孔的第一和第二对第一和第二对电极的相应电极。

8. 发明授权

US07393615B2 Mask for use in measuring flare, method of manufacturing the mask, method of identifying flare-affected region on wafer, and method of designing new mask to correct for flare 有权
标题翻译：用于测量火炬的掩模，制造掩模的方法，识别晶片上的闪光影响区域的方法以及设计新的掩模以校正闪光的方法
公开(公告)号：US07393615B2
公开(公告)日：2008-07-01
申请号：US10974950
申请日：2004-10-28
申请人： Won-Tai Ki , Seong-Woon Choi , Tae-Moon Jeong , Shun-Yong Zinn , Woo-Sung Han , Jung-Min Sohn
发明人： Won-Tai Ki , Seong-Woon Choi , Tae-Moon Jeong , Shun-Yong Zinn , Woo-Sung Han , Jung-Min Sohn
IPC分类号： G03F1/00 , G06F17/21
CPC分类号： G03F7/70591 , G03F1/44 , G03F1/70 , G03F7/70941
摘要： A mask for use in measuring flare produced by a projection lens of a photolithography system, a method of manufacturing the mask, a method of identifying a flare-affected region on a wafer, and a method for correcting for the flare to produce photoresist patterns of desired line widths are provided. A first photolithographic process is performed to form photoresist patterns on a test wafer using a mask including a light shielding region having a plurality of light transmission patterns and a light transmission region, and the photoresist patterns formed by light passing through the light transmission patterns of the light shielding region are compared to the photoresist patterns formed by light passing through the light transmission region. The amount of flare produced by the projection lens is quantified using the results of the comparison, and thus it is possible to identify a flare-affected region on the wafer. In addition, it is possible to form uniform photoresist patterns on the wafer by determining the open ratio of the flare-affected region and calculating an effective amount of the flare in the flare-affected region from the amount of flare of the lens and the open ratio. More specifically, a mask is produced in which the line widths of mask patterns are configured, i.e., corrected compared to the first mask, taking into consideration the effective amount of the flare.
摘要翻译：用于测量由光刻系统的投影透镜产生的闪光的掩模，掩模的制造方法，识别晶片上的火炬区域的方法，以及用于校正光斑以产生光致抗蚀剂图案的方法提供所需的线宽。执行第一光刻工艺以使用包括具有多个透光图案和光透射区域的遮光区域的掩模在测试晶片上形成光致抗蚀剂图案，并且由穿过光传输图案的光形成的光致抗蚀剂图案将光屏蔽区域与通过光透射区域的光形成的光致抗蚀剂图案进行比较。使用比较结果来量化由投影透镜产生的闪光量，因此可以识别晶片上的闪光影响区域。此外，可以通过确定闪光影响区域的开放比率并且从透镜的闪光量和开口的量来计算火炬影响区域中的闪光的有效量，从而在晶片上形成均匀的光致抗蚀剂图案比。更具体地，考虑到闪光灯的有效量，产生掩模图案的线宽被配置的掩模，即与第一掩模相比校正的掩模。

9. 发明授权

US5585210A Mask pattern of a semiconductor device and a method of manufacturing fine patterns using the same 失效
标题翻译：半导体器件的掩模图案和使用其制造精细图案的方法
公开(公告)号：US5585210A
公开(公告)日：1996-12-17
申请号：US536122
申请日：1995-09-29
申请人： Dong-Seon Lee , Chang-Jin Sohn , Woo-Sung Han , Gee-Hoo Kim
发明人： Dong-Seon Lee , Chang-Jin Sohn , Woo-Sung Han , Gee-Hoo Kim
IPC分类号： G03F1/70 , G03F7/20 , H01L21/027 , G03F9/00
CPC分类号： G03F7/70433 , G03F1/36
摘要： A mask pattern for manufacturing a resist pattern of a semiconductor device through photolithography is provided with an additional mask pattern whose size is such that resist patterns are not formed after exposure on the spaces thereof. Using such a mask pattern, a manufacturing method of fine patterns enables the formation of specific patterns having an improved profile.
摘要翻译：通过光刻制造半导体器件的抗蚀剂图案的掩模图案设置有附加的掩模图案，其尺寸使得在其空间上曝光之后不形成抗蚀剂图案。使用这种掩模图案，精细图案的制造方法能够形成具有改进的轮廓的特定图案。

10. 发明授权

US5155367A Gas contamination-measuring apparatus for use with an ultraviolet-emitting laser source 失效
标题翻译：用于紫外线发射激光源的气体污染测量装置
公开(公告)号：US5155367A
公开(公告)日：1992-10-13
申请号：US617812
申请日：1990-11-26
申请人： Woo-Sung Han
发明人： Woo-Sung Han
IPC分类号： G01N21/15 , G01N21/94
CPC分类号： G01N21/94 , G01N2021/157
摘要： A gas contamination measuring apparatus is equipped at the front side of the light path for detecting whether environmental contamination is present. The gas contamination measuring apparatus includes a nitrogen injecting inlet, a nitrogen exiting outlet, the quartz plate, an inside contamination detecting light emitting element and a photoreceiving element detecting light emitting element and a photoreceiving element and an outside contamination detecting light emitting element and a photoreceiving element.
摘要翻译：在光路的前侧配备有气体污染测量装置，用于检测是否存在环境污染。气体污染测量装置包括氮气注入口，氮气出口，石英板，内部污染物检测发光元件和检测发光元件的光接收元件和光接收元件以及外部污染检测发光元件和光接收器元件。

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