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1. 发明授权

US06291343B1 Plasma annealing of substrates to improve adhesion 失效
标题翻译：基板的等离子体退火以提高粘附性
公开(公告)号：US06291343B1
公开(公告)日：2001-09-18
申请号：US09008796
申请日：1998-01-20
申请人： Jennifer Tseng , Mei Chang , Ling Chen , David C. Smith , Karl A. Littau , Chyi Chern , Marvin Liao
发明人： Jennifer Tseng , Mei Chang , Ling Chen , David C. Smith , Karl A. Littau , Chyi Chern , Marvin Liao
IPC分类号： H01L2124
CPC分类号： H01L21/76856 , C23C16/0245 , C23C16/34 , C23C16/4581 , C23C16/481 , C23C16/5096 , C23C16/56 , H01J37/32174 , H01J2237/336 , H01L21/28512 , H01L21/76841 , H01L21/76862 , H01L21/76864
摘要： A layer of material is formed on a substrate in a partially formed integrated circuit on a wafer. The substrate undergoes a plasma annealing, during which the substrate is bombarded with ions. The plasma annealing may be performed by exposing the substrate to plasma that is generated from a nitrogen containing gas which is infused with energy. After the substrate is plasma annealed, a layer of a refractory metal nitride is deposited on the substrate. The layer of refractory metal nitride is then bombarded with a first set of ions. The bombardment of the refractory metal by the first set of ions may be achieved by performing a plasma annealing. The refractory metal nitride may be further bombarded by a second set of ions.
摘要翻译：在晶片上的部分形成的集成电路中的衬底上形成一层材料。衬底经历等离子体退火，在此期间衬底被离子轰击。等离子体退火可以通过将衬底暴露于由注入能量的含氮气体产生的等离子体来进行。在对衬底进行等离子体退火之后，在衬底上沉积难熔金属氮化物层。然后用第一组离子轰击难熔金属氮化物层。可以通过进行等离子体退火来实现第一组离子对难熔金属的轰击。耐火金属氮化物可以被第二组离子进一步轰击。

2. 发明授权

US5834068A Wafer surface temperature control for deposition of thin films 失效
标题翻译：用于沉积薄膜的晶片表面温度控制
公开(公告)号：US5834068A
公开(公告)日：1998-11-10
申请号：US682844
申请日：1996-07-12
申请人： Chyi Chern , Wei Chen , Marvin Liao , Jennifer Meng Chu Tseng , Mei Chang
发明人： Chyi Chern , Wei Chen , Marvin Liao , Jennifer Meng Chu Tseng , Mei Chang
IPC分类号： C23C14/02 , C23C16/44 , C23C16/46 , C23C16/52 , H01L21/205 , H01L21/28 , H01L21/285
CPC分类号： C23C16/463 , C23C16/46 , C23C16/52
摘要： A method for improving the characteristics of deposited thin films by improved control and stabilization of wafer surface temperatures. Further, the invention provides the ability to rapidly change the temperature of the wafer surface without the need to change the temperature of the chamber. The wafer is heated to an operating temperature by conventional means. A gas with high thermal conductivity, such as helium or hydrogen, is passed over the wafer to cool its surface to a desired temperature for the process to be performed. The flow rate is then adjusted to stabilize the temperature of the wafer and reduce surface temperature variations. Processing gases are then introduced into the chamber, and deposition onto the wafer commences. The maintenance of correct wafer surface temperature results in improved step coverage and conformality of the deposited film. Post-deposition steps such as plasma annealing may be performed using a gas compatible with the process at a flow rate which results in a temperature desirable for the post-deposition process.
摘要翻译：通过改善晶片表面温度的控制和稳定性来改善沉积薄膜的特性的方法。此外，本发明提供了快速改变晶片表面的温度而不需要改变腔的温度的能力。通过常规方法将晶片加热至工作温度。具有高导热性的气体（例如氦气或氢气）通过晶片，将其表面冷却至期望的温度以进行该过程。然后调节流速以稳定晶片的温度并降低表面温度变化。然后将处理气体引入室中，并且沉积到晶片上。保持正确的晶片表面温度导致了沉积膜的阶梯覆盖和保形性的改善。诸如等离子体退火之类的后沉积步骤可以使用与该工艺相容的气体以可以达到沉积后期望的温度的流速进行。

3. 发明授权

US06444036B2 Construction of a film on a semiconductor wafer 失效
标题翻译：在半导体晶片上构造膜
公开(公告)号：US06444036B2
公开(公告)日：2002-09-03
申请号：US09737681
申请日：2000-12-15
申请人： Chyi Chern , Michal Danek , Marvin Liao , Roderick C. Mosely , Karl Littau , Ivo Raaijmakers , David C. Smith
发明人： Chyi Chern , Michal Danek , Marvin Liao , Roderick C. Mosely , Karl Littau , Ivo Raaijmakers , David C. Smith
IPC分类号： B05C1100
CPC分类号： H01L21/76864 , C23C16/34 , C23C16/45565 , C23C16/4581 , C23C16/4586 , C23C16/481 , C23C16/5096 , C23C16/56 , H01J37/32174 , H01J2237/2001 , H01J2237/336 , H01L21/28512 , H01L21/76843 , H01L21/76856 , H01L21/76862
摘要： The construction of a film on a wafer, which is placed in a processing chamber, may be carried out through the following steps. A layer of material is deposited on the wafer. Next, the layer of material is annealed. Once the annealing is completed, the material may be oxidized. Alternatively, the material may be exposed to a silicon gas once the annealing is completed. The deposition, annealing, and either oxidation or silicon gas exposure may all be carried out in the same chamber, without need for removing the wafer from the chamber until all three steps are completed. A semiconductor wafer processing chamber for carrying out such an in-situ construction may include a processing chamber, a showerhead, a wafer support and a rf signal means. The showerhead supplies gases into the processing chamber, while the wafer support supports a wafer in the processing chamber. The rf signal means is coupled to the showerhead and the wafer support for providing a first rf signal to the showerhead and a second rf signal to the wafer support.
摘要翻译：放置在处理室中的晶片上的膜的构造可以通过以下步骤进行。在晶片上沉积一层材料。接下来，将材料层退火。一旦退火完成，材料可能被氧化。或者，一旦退火完成，材料可能暴露于硅气体。沉积，退火和氧化或硅气体暴露都可以在相同的室中进行，而不需要从腔室中移除晶片，直到完成所有三个步骤。用于进行这种原位结构的半导体晶片处理室可以包括处理室，喷头，晶片支架和射频信号装置。淋浴头将气体供应到处理室中，而晶片支撑件在处理室中支撑晶片。 rf信号装置耦合到喷头和晶片支架，用于向喷头提供第一rf信号，并将第二rf信号耦合到晶片支架。

4. 发明授权

US06500742B1 Construction of a film on a semiconductor wafer 失效
公开(公告)号：US06500742B1
公开(公告)日：2002-12-31
申请号：US09617515
申请日：2000-07-14
申请人： Chyi Chern , Michal Danek , Marvin Liao , Roderick C. Mosely , Karl Littau , Ivo Raaijmakers , David C. Smith
发明人： Chyi Chern , Michal Danek , Marvin Liao , Roderick C. Mosely , Karl Littau , Ivo Raaijmakers , David C. Smith
IPC分类号： H01L2144
CPC分类号： H01L21/76864 , C23C16/34 , C23C16/45565 , C23C16/4581 , C23C16/4586 , C23C16/481 , C23C16/5096 , C23C16/56 , H01J37/32174 , H01J2237/2001 , H01J2237/336 , H01L21/28512 , H01L21/76843 , H01L21/76856 , H01L21/76862
摘要： The construction of a film on a wafer, which is placed in a processing chamber, may be carried out through the following steps. A layer of material is deposited on the wafer. Next, the layer of material is annealed. Once the annealing is completed, the material may be oxidized. Alternatively, the material may be exposed to a silicon gas once the annealing is completed. The deposition, annealing, and either oxidation or silicon gas exposure may all be carried out in the same chamber, without need for removing the wafer from the chamber until all three steps are completed. A semiconductor wafer processing chamber for carrying out such an in-situ construction may include a processing chamber, a showerhead, a wafer support and a rf signal means. The showerhead supplies gases into the processing chamber, while the wafer support supports a wafer in the processing chamber. The rf signal means is coupled to the showerhead and the wafer support for providing a first rf signal to the showerhead and a second rf signal to the wafer support.

5. 发明授权

US06251758B1 Construction of a film on a semiconductor wafer 失效
标题翻译：在半导体晶片上构造膜
公开(公告)号：US06251758B1
公开(公告)日：2001-06-26
申请号：US08810221
申请日：1997-02-28
申请人： Chyi Chern , Michal Danek , Marvin Liao , Roderick C. Mosely , Karl Littau , Ivo Raaijmakers , David C. Smith
发明人： Chyi Chern , Michal Danek , Marvin Liao , Roderick C. Mosely , Karl Littau , Ivo Raaijmakers , David C. Smith
IPC分类号： H01L2128
CPC分类号： H01L21/76864 , C23C16/34 , C23C16/45565 , C23C16/4581 , C23C16/4586 , C23C16/481 , C23C16/5096 , C23C16/56 , H01J37/32174 , H01J2237/2001 , H01J2237/336 , H01L21/28512 , H01L21/76843 , H01L21/76856 , H01L21/76862
摘要： The construction of a film on a wafer, which is placed in a processing chamber, may be carried out through the following steps. A layer of material is deposited on the wafer. Next, the layer of material is annealed. Once the annealing is completed, the material may be oxidized. Alternatively, the material may be exposed to a silicon gas once the annealing is completed. The deposition, annealing, and either oxidation or silicon gas exposure may all be carried out in the same chamber, without need for removing the wafer from the chamber until all three steps are completed. A semiconductor wafer processing chamber for carrying out such an in-situ construction may include a processing chamber, a showerhead, a wafer support and a rf signal means. The showerhead supplies gases into the processing chamber, while the wafer support supports a wafer in the processing chamber. The rf signal means is coupled to the showerhead and the wafer support for providing a first rf signal to the showerhead and a second rf signal to the wafer support.
摘要翻译：放置在处理室中的晶片上的膜的构造可以通过以下步骤进行。在晶片上沉积一层材料。接下来，将材料层退火。一旦退火完成，材料可能被氧化。或者，一旦退火完成，材料可能暴露于硅气体。沉积，退火和氧化或硅气体暴露都可以在相同的室中进行，而不需要从腔室中移除晶片，直到完成所有三个步骤。用于进行这种原位结构的半导体晶片处理室可以包括处理室，喷头，晶片支架和射频信号装置。淋浴头将气体供应到处理室中，而晶片支撑件在处理室中支撑晶片。 rf信号装置耦合到喷头和晶片支架，用于向喷头提供第一rf信号，并将第二rf信号耦合到晶片支架。

6. 发明申请

US20060237320A1 Method for forming a metal layer in multiple steps 审中-公开
标题翻译：多级形成金属层的方法
公开(公告)号：US20060237320A1
公开(公告)日：2006-10-26
申请号：US11113948
申请日：2005-04-25
申请人： K.Y. Lin , Chuan-Ping Hou , Keng-Hong Lin , Po-Jen Shih , S.K. Chen , Chao-Lung Chen , Chen Cheng Chou , Chyi Chern , De-Dui Liao
发明人： K.Y. Lin , Chuan-Ping Hou , Keng-Hong Lin , Po-Jen Shih , S.K. Chen , Chao-Lung Chen , Chen Cheng Chou , Chyi Chern , De-Dui Liao
IPC分类号： C25D5/10
CPC分类号： C25D5/18 , C25D5/10 , C25D7/123 , H01L21/2885 , H01L21/32051 , H01L24/02 , H01L2924/01013 , H01L2924/01022 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01073 , H01L2924/01078 , H01L2924/14
摘要： A method for forming a metal layer having a predetermined thickness on an underlying material is disclosed. According to the method, the underlying material is electroplated to form the metal layer having a fraction of the predetermined thickness thereon. The step of electroplating is interrupted for a predetermined period of time. The step of electroplating is then resumed to form the metal layer having the predetermined thickness on the underlying material, thereby improving planarity of the metal layer.
摘要翻译：公开了一种在下面的材料上形成具有预定厚度的金属层的方法。根据该方法，将下面的材料电镀以形成其上具有预定厚度的一部分的金属层。电镀步骤中断预定的时间。然后恢复电镀步骤以在下层材料上形成具有预定厚度的金属层，从而改善金属层的平面度。

7. 发明申请

US20060043071A1 System and method for process control using in-situ thickness measurement 审中-公开
标题翻译：使用原位厚度测量的过程控制系统和方法
公开(公告)号：US20060043071A1
公开(公告)日：2006-03-02
申请号：US10932194
申请日：2004-09-02
申请人： Liang-Lun Lee , Chen-Shien Chen , Yai-Yei Huang , Chyi Chern
发明人： Liang-Lun Lee , Chen-Shien Chen , Yai-Yei Huang , Chyi Chern
IPC分类号： C03C15/00
CPC分类号： H01L21/7684 , H01L22/12
摘要： A fabrication system. A plating tool generates a layer of conductive material on a substrate. A polishing tool uses a mechanical mechanism to remove the conductive material from the substrate. A metrology tool measures an electromagnetic signal induced in the conductive material using a non-destructive testing mechanism. A controller, coupled to the polishing and metrology tools, determines residue thickness and removal rate of the conductive material during the polishing process according to the measured electromagnetic signal, and adjusts process parameters for the plating and polishing tools accordingly.
摘要翻译：制造系统。电镀工具在衬底上产生导电材料层。抛光工具使用机械机构从衬底去除导电材料。测量工具使用非破坏性测试机制来测量导电材料中感应的电磁信号。耦合到抛光和计量工具的控制器根据测量的电磁信号确定抛光过程中导电材料的残余物厚度和去除速率，并相应地调整电镀和抛光工具的工艺参数。

8. 发明申请

US20050224823A1 High power, high luminous flux light emitting diode and method of making same 有权
标题翻译：大功率，高光通量发光二极管及其制作方法
公开(公告)号：US20050224823A1
公开(公告)日：2005-10-13
申请号：US11044714
申请日：2005-01-28
申请人： Yongsheng Zhao , William So , Kevin Ma , Chyi Chern , Heng Liu , Eugene Ruddy
发明人： Yongsheng Zhao , William So , Kevin Ma , Chyi Chern , Heng Liu , Eugene Ruddy
IPC分类号： H01L29/18 , H01L33/08 , H01L33/38 , H01L33/46 , H01L33/00
CPC分类号： H01L33/38 , H01L33/08 , H01L33/20 , H01L33/46
摘要： A high power, high luminous flux light emitting diode (LED) comprises a substrate, a light-emitting structure, a first electrode and a second electrode. The LED has a top surface layout design in which the first electrode has a number of legs extending in one direction, and the second electrode has a number of legs extending in the opposite direction. At least portions of the legs of the first electrode are interspersed with and spaced apart from portions of the legs of the second electrode. This provides a configuration that enhances current spreading along the length of the legs of both electrodes.
摘要翻译：高功率，高光通量发光二极管（LED）包括基板，发光结构，第一电极和第二电极。 LED具有顶表面布局设计，其中第一电极具有沿一个方向延伸的多个支脚，并且第二电极具有沿相反方向延伸的多个支脚。第一电极的腿部的至少部分与第二电极的腿的部分分开并间隔开。这提供了增强沿着两个电极的腿的长度的电流扩散的配置。

9. 外观设计

USD640668S1 High definition television speaker 有权
标题翻译：高清电视扬声器
公开(公告)号：USD640668S1
公开(公告)日：2011-06-28
申请号：US29348446
申请日：2010-01-06
申请人： Chyi Chern
设计人： Chyi Chern

10. 外观设计

USD570847S1 Media device docking station with a speaker 有权
标题翻译：带扬声器的媒体设备坞站
公开(公告)号：USD570847S1
公开(公告)日：2008-06-10
申请号：US29289214
申请日：2007-07-11
申请人： Chyi Chern
设计人： Chyi Chern

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