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1. 发明授权

US09297771B2 Methods and systems for fabricating platelets of a monochromator for X-ray photoelectron spectroscopy 有权
标题翻译：用于制造用于X射线光电子能谱的单色仪的血小板的方法和系统
公开(公告)号：US09297771B2
公开(公告)日：2016-03-29
申请号：US13975035
申请日：2013-08-23
申请人： Jeffrey T. Fanton , Rodney Smedt , Bruno W. Schueler , David A. Reed
发明人： Jeffrey T. Fanton , Rodney Smedt , Bruno W. Schueler , David A. Reed
IPC分类号： G01N23/20 , G01N23/227 , H01J37/256 , G21K1/06 , B23Q17/20
CPC分类号： G01N23/20 , B23Q17/20 , G01N23/2273 , G21K1/06 , G21K2201/064 , H01J37/256 , Y10T29/49764 , Y10T29/49769 , Y10T29/49771 , Y10T29/53022
摘要： Methods and systems for fabricating platelets of a monochromator for X-ray photoelectron spectroscopy (XPS) are disclosed. For example, a method of fabricating a platelet of a monochromator for X-ray photoelectron spectroscopy involves placing a crystal on a stage of an X-ray measuring apparatus, the crystal having a top surface. The method also involves measuring, by X-ray reflection, an orientation of a crystal plane of the crystal, the crystal plane beneath the top surface of the crystal and having a primary axis. The method also involves measuring a surface angle of the top surface of the crystal by measuring a light beam reflected from the top surface of the crystal.
摘要翻译：公开了用于制造用于X射线光电子能谱（XPS）的单色仪的血小板的方法和系统。例如，制造用于X射线光电子能谱的单色仪的血小板的方法包括将晶体放置在X射线测量装置的台上，该晶体具有顶表面。该方法还包括通过X射线反射测量晶体的晶面的取向，晶体的顶表面下方的晶面并具有主轴。该方法还包括通过测量从晶体顶表面反射的光束来测量晶体顶表面的表面角度。

2. 发明申请

US20170176354A1 METHODS AND SYSTEMS FOR MEASURING PERIODIC STRUCTURES USING MULTI-ANGLE X-RAY REFLECTANCE SCATTEROMETRY (XRS) 审中-公开
公开(公告)号：US20170176354A1
公开(公告)日：2017-06-22
申请号：US15451104
申请日：2017-03-06
申请人： Heath A. Pois , David A. Reed , Bruno W. Schueler , Rodney Smedt , Jeffrey T. Fanton
发明人： Heath A. Pois , David A. Reed , Bruno W. Schueler , Rodney Smedt , Jeffrey T. Fanton
IPC分类号： G01N23/201
CPC分类号： G01N23/201 , G01N2223/054 , H01L22/12
摘要： Methods and systems for measuring periodic structures using multi-angle X-ray reflectance scatterometry (XRS) are disclosed. For example, a method of measuring a sample by X-ray reflectance scatterometry involves impinging an incident X-ray beam on a sample having a periodic structure to generate a scattered X-ray beam, the incident X-ray beam simultaneously providing a plurality of incident angles and a plurality of azimuthal angles. The method also involves collecting at least a portion of the scattered X-ray beam.

3. 发明授权

US09588066B2 Methods and systems for measuring periodic structures using multi-angle X-ray reflectance scatterometry (XRS) 有权
标题翻译：使用多角度X射线反射散射法（XRS）测量周期结构的方法和系统
公开(公告)号：US09588066B2
公开(公告)日：2017-03-07
申请号：US14161942
申请日：2014-01-23
申请人： Heath A. Pois , David A. Reed , Bruno W. Schueler , Rodney Smedt , Jeffrey T. Fanton
发明人： Heath A. Pois , David A. Reed , Bruno W. Schueler , Rodney Smedt , Jeffrey T. Fanton
IPC分类号： G01N23/201 , H01L21/66
CPC分类号： G01N23/201 , G01N2223/054 , H01L22/12
摘要： Methods and systems for measuring periodic structures using multi-angle X-ray reflectance scatterometry (XRS) are disclosed. For example, a method of measuring a sample by X-ray reflectance scatterometry involves impinging an incident X-ray beam on a sample having a periodic structure to generate a scattered X-ray beam, the incident X-ray beam simultaneously providing a plurality of incident angles and a plurality of azimuthal angles. The method also involves collecting at least a portion of the scattered X-ray beam.
摘要翻译：公开了使用多角度X射线反射散射法（XRS）测量周期性结构的方法和系统。例如，通过X射线反射散射法测量样品的方法包括将入射的X射线束照射在具有周期性结构的样品上以产生散射的X射线束，入射的X射线束同时提供多个入射角和多个方位角。该方法还涉及收集散射的X射线束的至少一部分。

4. 发明申请

US20150204802A1 METHODS AND SYSTEMS FOR MEASURING PERIODIC STRUCTURES USING MULTI-ANGLE X-RAY REFLECTANCE SCATTEROMETRY (XRS) 有权
标题翻译：使用多角度X射线反射散射测量（XRS）测量周期结构的方法和系统
公开(公告)号：US20150204802A1
公开(公告)日：2015-07-23
申请号：US14161942
申请日：2014-01-23
申请人： Heath A. Pois , David A. Reed , Bruno W. Schueler , Rodney Smedt , Jeffrey T. Fanton
发明人： Heath A. Pois , David A. Reed , Bruno W. Schueler , Rodney Smedt , Jeffrey T. Fanton
IPC分类号： G01N23/201
CPC分类号： G01N23/201 , G01N2223/054 , H01L22/12
摘要： Methods and systems for measuring periodic structures using multi-angle X-ray reflectance scatterometry (XRS) are disclosed. For example, a method of measuring a sample by X-ray reflectance scatterometry involves impinging an incident X-ray beam on a sample having a periodic structure to generate a scattered X-ray beam, the incident X-ray beam simultaneously providing a plurality of incident angles and a plurality of azimuthal angles. The method also involves collecting at least a portion of the scattered X-ray beam.
摘要翻译：公开了使用多角度X射线反射散射法（XRS）测量周期性结构的方法和系统。例如，通过X射线反射散射法测量样品的方法包括将入射的X射线束照射在具有周期性结构的样品上以产生散射的X射线束，入射的X射线束同时提供多个入射角和多个方位角。该方法还涉及收集散射的X射线束的至少一部分。

5. 发明申请

US20150052723A1 Methods and Systems for Fabricating Platelets of a Monochromator for X-ray Photoelectron Spectroscopy 有权
标题翻译：用于制造X射线光电子能谱仪的单色器血小板的方法和系统
公开(公告)号：US20150052723A1
公开(公告)日：2015-02-26
申请号：US13975035
申请日：2013-08-23
申请人： Jeffrey T. Fanton , Rodney Smedt , Bruno W. Schueler , David A. Reed
发明人： Jeffrey T. Fanton , Rodney Smedt , Bruno W. Schueler , David A. Reed
IPC分类号： B23P19/04 , G01N23/20
CPC分类号： G01N23/20 , B23Q17/20 , G01N23/2273 , G21K1/06 , G21K2201/064 , H01J37/256 , Y10T29/49764 , Y10T29/49769 , Y10T29/49771 , Y10T29/53022
摘要： Methods and systems for fabricating platelets of a monochromator for X-ray photoelectron spectroscopy (XPS) are disclosed. For example, a method of fabricating a platelet of a monochromator for X-ray photoelectron spectroscopy involves placing a crystal on a stage of an X-ray measuring apparatus, the crystal having a top surface. The method also involves measuring, by X-ray reflection, an orientation of a crystal plane of the crystal, the crystal plane beneath the top surface of the crystal and having a primary axis. The method also involves measuring a surface angle of the top surface of the crystal by measuring a light beam reflected from the top surface of the crystal.
摘要翻译：公开了用于制造用于X射线光电子能谱（XPS）的单色仪的血小板的方法和系统。例如，制造用于X射线光电子能谱的单色仪的血小板的方法包括将晶体放置在X射线测量装置的台上，该晶体具有顶面。该方法还包括通过X射线反射测量晶体的晶面的取向，晶体的顶表面下方的晶面并具有主轴。该方法还包括通过测量从晶体顶表面反射的光束来测量晶体顶表面的表面角度。

6. 发明申请

US20130077742A1 SYSTEM AND METHOD FOR CHARACTERIZING A FILM BY X-RAY PHOTOELECTRON AND LOW-ENERGY X-RAY FLUORESCENCE SPECTROSCOPY 有权
标题翻译：用X射线光电子和低能量X射线荧光光谱表征薄膜的系统和方法
公开(公告)号：US20130077742A1
公开(公告)日：2013-03-28
申请号：US13246488
申请日：2011-09-27
申请人： Bruno W. Schueler , David A. Reed , Jeffrey T. Fanton , Rodney Smedt
发明人： Bruno W. Schueler , David A. Reed , Jeffrey T. Fanton , Rodney Smedt
IPC分类号： G01N23/223 , G21K1/00
CPC分类号： G21K1/06 , G01N23/223 , G01N23/2273 , G01N2223/61 , G21K2201/062 , G21K2201/064
摘要： Systems and methods for characterizing films by X-ray photoelectron spectroscopy (XPS) are disclosed. For example, a system for characterizing a film may include an X-ray source for generating an X-ray beam having an energy below the k-edge of silicon. A sample holder may be included for positioning a sample in a pathway of the X-ray beam. A first detector may be included for collecting an XPS signal generated by bombarding the sample with the X-ray beam. A second detector may be included for collecting an X-ray fluorescence (XRF) signal generated by bombarding the sample with the X-ray beam. Monitoring/estimation of the primary X-ray flux at the analysis site may be provided by X-ray flux detectors near and at the analysis site. Both XRF and XPS signals may be normalized to the (estimated) primary X-ray flux to enable film thickness or dose measurement without the need to employ signal intensity ratios.
摘要翻译：公开了通过X射线光电子能谱（XPS）表征膜的系统和方法。例如，用于表征胶片的系统可以包括用于产生具有低于硅的k边缘的能量的X射线束的X射线源。可以包括样品保持器以将样品定位在X射线束的通路中。可以包括第一检测器以收集通过用X射线束轰击样品而产生的XPS信号。可以包括第二检测器，用于收集通过用X射线束轰击样品而产生的X射线荧光（XRF）信号。在分析现场的X射线通量探测器附近和分析现场可以提供监测/估计分析现场的主要X射线通量。 XRF和XPS信号都可以归一化为（估计的）初级X射线通量，以实现膜厚度或剂量测量，而不需要使用信号强度比。

7. 发明授权

US09240254B2 System and method for characterizing a film by X-ray photoelectron and low-energy X-ray fluorescence spectroscopy 有权
标题翻译：通过X射线光电子和低能X射线荧光光谱表征膜的系统和方法
公开(公告)号：US09240254B2
公开(公告)日：2016-01-19
申请号：US13246488
申请日：2011-09-27
申请人： Bruno W. Schueler , David A. Reed , Jeffrey Thomas Fanton , Rodney Smedt
发明人： Bruno W. Schueler , David A. Reed , Jeffrey Thomas Fanton , Rodney Smedt
IPC分类号： G01N23/223 , G21K1/00 , G21K1/06 , G01N23/227
CPC分类号： G21K1/06 , G01N23/223 , G01N23/2273 , G01N2223/61 , G21K2201/062 , G21K2201/064
摘要： Systems and methods for characterizing films by X-ray photoelectron spectroscopy (XPS) are disclosed. For example, a system for characterizing a film may include an X-ray source for generating an X-ray beam having an energy below the k-edge of silicon. A sample holder may be included for positioning a sample in a pathway of the X-ray beam. A first detector may be included for collecting an XPS signal generated by bombarding the sample with the X-ray beam. A second detector may be included for collecting an X-ray fluorescence (XRF) signal generated by bombarding the sample with the X-ray beam. Monitoring/estimation of the primary X-ray flux at the analysis site may be provided by X-ray flux detectors near and at the analysis site. Both XRF and XPS signals may be normalized to the (estimated) primary X-ray flux to enable film thickness or dose measurement without the need to employ signal intensity ratios.
摘要翻译：公开了通过X射线光电子能谱（XPS）表征膜的系统和方法。例如，用于表征胶片的系统可以包括用于产生具有低于硅的k边缘的能量的X射线束的X射线源。可以包括样品保持器以将样品定位在X射线束的通路中。可以包括第一检测器以收集通过用X射线束轰击样品而产生的XPS信号。可以包括第二检测器，用于收集通过用X射线束轰击样品而产生的X射线荧光（XRF）信号。在分析现场的X射线通量探测器附近和分析现场可以提供监测/估计分析现场的主要X射线通量。 XRF和XPS信号都可以归一化为（估计的）初级X射线通量，以实现膜厚度或剂量测量，而不需要使用信号强度比。

8. 发明授权

US06870617B2 Accurate small-spot spectrometry systems and methods 有权
标题翻译：精确的小光谱分析系统和方法
公开(公告)号：US06870617B2
公开(公告)日：2005-03-22
申请号：US10796322
申请日：2004-03-09
申请人： Adam Norton , Abdurrahman Sezginer , Fred E. Stanke , Rodney Smedt
发明人： Adam Norton , Abdurrahman Sezginer , Fred E. Stanke , Rodney Smedt
IPC分类号： G01J3/08 , G01J3/42 , G01N21/55
CPC分类号： G01J3/02 , G01J3/0218 , G01J3/08 , G01J3/42 , G01N21/55
摘要： The invention is a method and apparatus for determining characteristics of a sample. The system and method provide for detecting a monitor beam reflected off a mirror, where the monitor beam corresponds to the intensity of light incident upon the sample. The system and method also provide for detecting a measurement beam, where the measurement beam has been reflected off the sample being characterized. Both the monitor beam and the measurement beam are transmitted through the same transmission path, and detected by the same detector. Thus, potential sources of variations between the monitor beam and the measurement beam which are not due to the characteristics of the sample are minimized. Reflectivity information for the sample can be determined by comparing data corresponding to the measurement beam relative to data corresponding the monitor beam.
摘要翻译：本发明是用于确定样品特性的方法和装置。该系统和方法提供用于检测从反射镜反射的监视光束，其中监视光束对应于入射在样本上的光的强度。该系统和方法还提供了用于检测测量光束，其中测量光束已经从被表征的样品反射出来。监测光束和测量光束都通过相同的传输路径传输，并由相同的检测器检测。因此，监测光束和测量光束之间不是由于样品特性引起的变化的潜在来源被最小化。可以通过将与测量光束相对应的数据相对于监视光束对应的数据进行比较来确定样本的反射率信息。

9. 发明授权

US08179530B2 Methods and systems for determining a critical dimension and overlay of a specimen 有权
标题翻译：用于确定试样的临界尺寸和覆盖层的方法和系统
公开(公告)号：US08179530B2
公开(公告)日：2012-05-15
申请号：US12830408
申请日：2010-07-05
申请人： Ady Levy , Kyle A. Brown , Rodney Smedt , Gary Bultman , Mehrdad Nikoonahad , Dan Wack , John Fielden , Ibrahim Abdul-Halim
发明人： Ady Levy , Kyle A. Brown , Rodney Smedt , Gary Bultman , Mehrdad Nikoonahad , Dan Wack , John Fielden , Ibrahim Abdul-Halim
IPC分类号： G01B11/00 , G01B11/30 , G01B11/14 , G01B11/28
CPC分类号： G01N21/27 , G01N21/211 , G01N21/47 , G01N21/636 , G01N21/64 , G01N21/9501 , G01N21/956 , G01N2021/646 , G01N2021/8825 , G03F7/70616 , G03F7/70625 , G03F7/70633 , G03F7/7065 , G03F7/70658 , G03F7/707 , G03F7/70708 , H01J2237/31701 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including: but not limited to, critical dimension and overlay misregistration; defects and thin film characteristics; critical dimension and defects; critical dimension and thin film characteristics; critical dimension, thin film characteristics and defects; macro defects and micro defects; flatness, thin film characteristics and defects; overlay misregistration and flatness; an implant characteristic and defects; and adhesion and thickness. In this manner, a measurement device may perform multiple optical and/or non-optical metrology and/or inspection techniques.
摘要翻译：提供了用于监测半导体制造工艺的方法和系统。系统可以包括被配置为支撑样本并耦合到测量装置的台。测量装置可以包括照明系统和检测系统。照明系统和检测系统可以被配置为使得系统可以被配置为确定样本的多个属性。例如，系统可以被配置为确定样本的多个属性，包括但不限于临界尺寸和重叠错位; 缺陷和薄膜特性; 临界尺寸和缺陷; 临界尺寸和薄膜特性; 临界尺寸，薄膜特性和缺陷; 宏观缺陷和微缺陷; 平整度，薄膜特性和缺陷; 重叠错位和平整度; 植入物特征和缺陷; 附着力和厚度。以这种方式，测量装置可以执行多个光学和/或非光学测量和/或检查技术。

10. 发明申请

US20100271621A1 METHODS AND SYSTEMS FOR DETERMINING A CRITICAL DIMENSION AND OVERLAY OF A SPECIMEN 有权
标题翻译：确定标本的关键尺寸和覆盖物的方法和系统
公开(公告)号：US20100271621A1
公开(公告)日：2010-10-28
申请号：US12830408
申请日：2010-07-05
申请人： Ady Levy , Kyle A. Brown , Rodney Smedt , Gary Bultman , Mehrdad Nikoonahad , Dan Wack , John Fielden , Ibrahim Abdul-Halim
发明人： Ady Levy , Kyle A. Brown , Rodney Smedt , Gary Bultman , Mehrdad Nikoonahad , Dan Wack , John Fielden , Ibrahim Abdul-Halim
IPC分类号： G01N21/00 , G01B11/14 , G01B11/00
CPC分类号： G01N21/27 , G01N21/211 , G01N21/47 , G01N21/636 , G01N21/64 , G01N21/9501 , G01N21/956 , G01N2021/646 , G01N2021/8825 , G03F7/70616 , G03F7/70625 , G03F7/70633 , G03F7/7065 , G03F7/70658 , G03F7/707 , G03F7/70708 , H01J2237/31701 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including: but not limited to, critical dimension and overlay misregistration; defects and thin film characteristics; critical dimension and defects; critical dimension and thin film characteristics; critical dimension, thin film characteristics and defects; macro defects and micro defects; flatness, thin film characteristics and defects; overlay misregistration and flatness; an implant characteristic and defects; and adhesion and thickness. In this manner, a measurement device may perform multiple optical and/or non-optical metrology and/or inspection techniques.
摘要翻译：提供了用于监测半导体制造工艺的方法和系统。系统可以包括被配置为支撑样本并耦合到测量装置的台。测量装置可以包括照明系统和检测系统。照明系统和检测系统可以被配置为使得系统可以被配置为确定样本的多个属性。例如，系统可以被配置为确定样本的多个属性，包括但不限于临界尺寸和重叠错位; 缺陷和薄膜特性; 临界尺寸和缺陷; 临界尺寸和薄膜特性; 临界尺寸，薄膜特性和缺陷; 宏观缺陷和微缺陷; 平整度，薄膜特性和缺陷; 重叠错位和平整度; 植入物特征和缺陷; 附着力和厚度。以这种方式，测量装置可以执行多个光学和/或非光学测量和/或检查技术。

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