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    • 1. 发明授权
    • Three terminal magnetic sensor having an in-stack longitudinal biasing layer structure in the collector region and a pinned layer structure in the emitter region
    • 三端子磁传感器在集电极区域具有叠层纵向偏置层结构,在发射极区域具有被钉扎层结构
    • US07710691B2
    • 2010-05-04
    • US11032395
    • 2005-01-10
    • Jeffrey R. ChildressJeffrey S. Lille
    • Jeffrey R. ChildressJeffrey S. Lille
    • G11B5/39
    • G11B5/3932B82Y25/00G01R33/093H01L29/66984H01L43/08
    • In one illustrative example, a three terminal magnetic sensor (TTM) suitable for use in a magnetic head has a sensor stack structure which includes a base region, a collector region, and an emitter region. A first barrier layer separates the emitter region from the base region, and a second barrier layer separates the collector region from the base region. A plurality of terminals of the TTM include a base lead coupled to the base region, a collector lead coupled to the collector region, and an emitter lead coupled to the emitter region. Preferably, the base region consists of a free layer structure so as to have a relatively small thickness. A pinned layer structure is made part of the emitter region. An in-stack longitudinal biasing layer (LBL) structure is formed in stack with the sensor stack structure and has a magnetic moment that is parallel to a sensing plane of the TTM for magnetically biasing the free layer structure. The in-stack LBL structure is made part of the collector region which also includes a layer of semiconductor material. In one variation, the emitter region has the in-stack LBL structure and the collector region has the pinned layer structure. The TTM may comprise a spin valve transistor (SVT), a magnetic tunnel transistor (MTT), or a double junction structure.
    • 在一个说明性示例中,适用于磁头的三端磁传感器(TTM)具有包括基极区域,集电极区域和发射极区域的传感器堆叠结构。 第一阻挡层将发射极区域与基极区域分开,并且第二阻挡层将集电极区域与基极区域分离。 TTM的多个端子包括耦合到基极区域的基极引线,耦合到集电极区域的集电极引线和耦合到发射极区域的发射极引线。 优选地,基区由自由层结构组成,以便具有相对较小的厚度。 被钉扎层结构是发射极区域的一部分。 堆叠纵向偏置层(LBL)结构与传感器堆叠结构堆叠形成,并且具有平行于TTM的感测平面的磁矩,用于磁偏置自由层结构。 叠层LBL结构是集成区域的一部分,其还包括半导体材料层。 在一个变型中,发射极区域具有叠层LBL结构,并且集电极区域具有钉扎层结构。 TTM可以包括自旋阀晶体管(SVT),磁隧道晶体管(MTT)或双结结构。
    • 2. 发明授权
    • Three terminal magnetic sensor having an in-stack longitudinal biasing layer structure
    • 具有叠层纵向偏置层结构的三端磁传感器
    • US07639459B2
    • 2009-12-29
    • US11032598
    • 2005-01-10
    • Jeffrey R. ChildressRobert E. Fontana, Jr.Jeffrey S. Lille
    • Jeffrey R. ChildressRobert E. Fontana, Jr.Jeffrey S. Lille
    • G11B5/33
    • B82Y25/00G01R33/093G11B5/3903G11B5/3932H01L29/66984H01L43/08
    • In one illustrative example, a three terminal magnetic sensor (TTM) suitable for use in a magnetic head has a sensor stack structure which includes a base region, a collector region, and an emitter region. A first barrier layer separates the emitter region from the base region, and a second barrier layer separates the collector region from the base region. A plurality of terminals of the TTM include a base lead coupled to the base region, a collector lead coupled to the collector region, and an emitter lead coupled to the emitter region. Preferably, the base region consists of a free layer structure so as to have a relatively small thickness. A pinned layer structure is made part of the emitter region. An in-stack longitudinal biasing layer (LBL) structure is formed in stack with the sensor stack structure and has a magnetic moment that is parallel to a sensing plane of the TTM for magnetically biasing the free layer structure. The in-stack LBL structure is made part of the collector region which also includes a layer of semiconductor material. In one variation, the emitter region has the in-stack LBL structure and the collector region has the pinned layer structure. The TTM may comprise a spin valve transistor (SVT), a magnetic tunnel transistor (MTT), or a double junction structure.
    • 在一个说明性示例中,适用于磁头的三端磁传感器(TTM)具有包括基极区域,集电极区域和发射极区域的传感器堆叠结构。 第一阻挡层将发射极区域与基极区域分开,并且第二阻挡层将集电极区域与基极区域分离。 TTM的多个端子包括耦合到基极区域的基极引线,耦合到集电极区域的集电极引线和耦合到发射极区域的发射极引线。 优选地,基区由自由层结构组成,以便具有相对较小的厚度。 被钉扎层结构是发射极区域的一部分。 堆叠纵向偏置层(LBL)结构与传感器堆叠结构堆叠形成,并且具有平行于TTM的感测平面的磁矩,用于磁偏置自由层结构。 叠层LBL结构是集成区域的一部分,其还包括半导体材料层。 在一个变型中,发射极区域具有叠层LBL结构,并且集电极区域具有钉扎层结构。 TTM可以包括自旋阀晶体管(SVT),磁隧道晶体管(MTT)或双结结构。
    • 3. 发明授权
    • Three terminal magnetic sensor having an in-stack longitudinal biasing layer structure in the collector or emitter region
    • 三端子磁传感器在集电极或发射极区域具有堆叠内纵向偏置层结构
    • US07259942B2
    • 2007-08-21
    • US11032627
    • 2005-01-10
    • Jeffrey R. ChildressJeffrey S. Lille
    • Jeffrey R. ChildressJeffrey S. Lille
    • G11B5/39
    • G11B5/3932B82Y25/00G01R33/093G11B5/3903H01L29/66984H01L43/08
    • In one illustrative example, a three terminal magnetic sensor (TTM) suitable for use in a magnetic head has a base region, a collector region, and an emitter region. A first barrier layer is located between the emitter region and the base region, and a second barrier layer is located between the collector region and the base region. A sensing plane is defined along sides of the base region, the collector region, and the emitter region. The base region has a free layer structure, a pinned layer structure adjacent the first barrier layer, and a non-magnetic spacer layer located between the free layer structure and the pinned layer structure. The collector region comprises an in-stack longitudinal biasing layer (LBL) structure which magnetically biases the free layer structure, where the second barrier layer serves as a non-magnetic spacer layer for the in-stacking biasing layer structure. In one variation, the layers are inverted such that the emitter region has the in-stack LBL structure. The TTM may comprise a spin valve transistor (SVT), a magnetic tunnel transistor (MTT), or a double junction structure.
    • 在一个说明性示例中,适用于磁头的三端磁传感器(TTM)具有基极区域,集电极区域和发射极区域。 第一阻挡层位于发射极区域和基极区域之间,第二阻挡层位于集电极区域和基极区域之间。 感测平面沿着基极区域,集电极区域和发射极区域的侧面限定。 基区具有自由层结构,与第一阻挡层相邻的钉扎层结构,以及位于自由层结构和钉扎层结构之间的非磁性间隔层。 集电极区域包括磁性偏置自由层结构的叠层纵向偏置层(LBL)结构,其中第二阻挡层用作堆叠偏置层结构的非磁性间隔层。 在一个变型中,这些层被反转,使得发射极区域具有叠层LBL结构。 TTM可以包括自旋阀晶体管(SVT),磁隧道晶体管(MTT)或双结结构。
    • 6. 发明授权
    • Method for manufacturing a magnetic write head
    • 磁写头制造方法
    • US08230583B2
    • 2012-07-31
    • US12646884
    • 2009-12-23
    • Jeffrey S. Lille
    • Jeffrey S. Lille
    • G11B5/127H04R31/00
    • G11B5/3146G11B5/11G11B5/1278G11B5/3116G11B5/315G11B5/3166G11B5/3169
    • A method for self aligning a lapping guide with a structure of a write pole. A write pole is formed over a substrate and an electrically conductive material lapping guide material is deposited in a location that is removed from the write pole. A mask is then formed over a portion of the write pole and a portion of the electrically conductive material. A material removal process such as reactive ion etching can then be performed to remove a portion of the magnetic material that is not protected by the mask structure. An magnetic material is then electroplated over the write pole with the write pole, with the mask still in place. In this way, the electroplated material has an edge that is self aligned with an edge of the electrically conductive lapping guide material, both being defined by the same mask structure.
    • 一种用于将研磨导向器与写入杆的结构自对准的方法。 写入极在衬底上形成,并且导电材料研磨引导材料沉积在从写柱移除的位置。 然后在写入极的一部分和导电材料的一部分上形成掩模。 然后可以执行诸如反应离子蚀刻的材料去除处理以去除未被掩模结构保护的磁性材料的一部分。 然后将磁性材料用写入极电镀在写入极上,同时掩模仍然在位。 以这种方式,电镀材料具有与导电研磨导向材料的边缘自对准的边缘,两者都由相同的掩模结构限定。
    • 9. 发明申请
    • MAGNETIC RECORDING SLIDER WITH FLEX SIDE PADS
    • 磁性录音滑块与FLEX SIDE PADS
    • US20090195930A1
    • 2009-08-06
    • US12023997
    • 2008-01-31
    • Jeffrey S. Lille
    • Jeffrey S. Lille
    • G11B5/60
    • G11B5/6064G11B5/102G11B5/314G11B5/607G11B2005/0021
    • A system according to one embodiment comprises a slider having an air bearing surface side and a flex side, the flex side being positioned on an opposite side of the slider as the air bearing surface side; electrical pads on the flex side of the slider; and a heating device in electrical communication with the electrical pads, where the heating device comprises a least one optical element A method according to one embodiment comprises positioning pads of a heating device towards pads on a slider; detecting an impedance in a circuit including the pads of the heating device; moving the heating device relative to the slider to minimize the impedance; and coupling the heating device to the slider. Additional systems and methods are provided.
    • 根据一个实施例的系统包括具有空气轴承表面侧和柔性侧的滑块,柔性侧位于作为空气轴承表面侧的滑块的相对侧上; 滑块的柔性侧的电焊盘; 以及与所述电焊盘电连通的加热装置,其中所述加热装置包括至少一个光学元件。根据一个实施例的方法包括将加热装置的焊盘定位在滑块上的焊盘上; 检测包括加热装置的焊盘的电路中的阻抗; 相对于滑块移动加热装置以使阻抗最小化; 并将加热装置联接到滑块。 提供了其他系统和方法。