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    • 1. 发明授权
    • Brush core assembly
    • 刷芯组装
    • US07735177B1
    • 2010-06-15
    • US11351567
    • 2006-02-10
    • Jeffrey J. FarberChristopher PenaEdward Orbeta
    • Jeffrey J. FarberChristopher PenaEdward Orbeta
    • H01L21/00
    • H01L21/67046
    • A brush core for use in cleaning a substrate is provided. The brush core includes an elongated cylinder having a first end and a second end. The first end of the elongated cylinder is configured to receive a drive hub. The second end is configured to receive fluid into an inner cavity of the elongated cylinder. The inner cavity is configured to distribute fluid to a plurality of fluid channels having a first diameter. The plurality of fluid channels are configured to distribute the fluid to corresponding distribution holes having a second diameter. The brush core further including a plurality of non-fluid distributing pockets defined on the outer surface. The corresponding distribution holes and plurality of non-fluid distributing pockets are configured so that a thickness of a solid portion of the brush core is substantially similar. In one embodiment, the first diameter is less than the second diameter.
    • 提供了用于清洁基板的刷芯。 刷芯包括具有第一端和第二端的细长圆筒。 细长圆柱体的第一端构造成接收驱动毂。 第二端构造成将流体接收到细长圆柱体的内腔中。 内腔构造成将流体分配到具有第一直径的多个流体通道。 多个流体通道被配置成将流体分配到具有第二直径的相应的分配孔。 刷芯还包括限定在外表面上的多个非流体分配袋。 相应的分配孔和多个非流体分配袋被构造成使得刷芯的实心部分的厚度基本相似。 在一个实施例中,第一直径小于第二直径。
    • 2. 发明授权
    • Methods for cleaning substrate surfaces after etch operations
    • 在蚀刻操作之后清洁衬底表面的方法
    • US06187684B1
    • 2001-02-13
    • US09458550
    • 1999-12-09
    • Jeffrey J. FarberAllan M. RadmanHelmuth W. Treichel
    • Jeffrey J. FarberAllan M. RadmanHelmuth W. Treichel
    • H01L21302
    • H01L21/02063
    • A method for post plasma etch cleaning a semiconductor wafer is provided. The semiconductor wafer has a plurality of layers formed thereon, and one of the plurality of layers is an oxide layer that has an overlying photoresist mask. The method includes plasma etching a via feature in the oxide layer. The plasma etching is configured to generate a polymer film on sidewalls of the via feature. An ashing operation is then performed to remove the photoresist mask. The method then moves to brush scrubbing the oxide layer and the via feature defined in the oxide layer with first chemicals in a first brush station. Brush scrubbing the oxide layer and the via feature follows with DI water in the first brush station. Then, the oxide layer and the via feature are brush scrubbed with second chemicals in a second brush station. In the same second brush station, the oxide layer and the via feature are scrubbed with DI water. The brush scrubbing in the first and second brush stations is configured to remove the polymer film from the side walls of the via feature.
    • 提供了用于等离子体蚀刻清洗半导体晶片的方法。 半导体晶片具有形成在其上的多个层,并且多个层中的一个层是具有上覆光致抗蚀剂掩模的氧化物层。 该方法包括等离子体蚀刻氧化物层中的通孔特征。 等离子体蚀刻被配置为在通孔特征的侧壁上产生聚合物膜。 然后执行灰化操作以去除光致抗蚀剂掩模。 然后该方法移动以在第一电刷站中用第一化学品擦洗在氧化物层中定义的氧化物层和通孔特征。 擦洗氧化物层和通孔特征的刷子在第一电刷站中用去离子水进行。 然后,氧化物层和通孔特征在第二个电刷站中用第二种化学物质刷洗。 在相同的第二刷台中,氧化物层和通孔特征用去离子水洗涤。 在第一和第二刷站中的刷洗被配置成从通孔特征的侧壁去除聚合物膜。
    • 6. 发明申请
    • Modifications to Surface Topography of Proximity Head
    • 接近头表面形貌的修改
    • US20100294742A1
    • 2010-11-25
    • US12471169
    • 2009-05-22
    • Enrico MagniRobert J. O'DonnellJeffrey J. Farber
    • Enrico MagniRobert J. O'DonnellJeffrey J. Farber
    • B44C1/22H01L21/306
    • H01L21/67051H01L21/6708
    • In an example embodiment, a wet system includes a proximity head and a holder for substrate (e.g., a semiconductor wafer). The proximity head is configured to cause a flow of an aqueous fluid in a meniscus across a surface of the proximity head. The surface of the proximity head interfaces with a surface of a substrate through the flow. The surface of the head is composed of a non-reactive material (e.g., thermoplastic) with modifications as to surface topography that confine, maintain, and/or facilitate the flow. The modifications as to surface topography might be inscribed on the surface with a conical scribe (e.g., with a diamond or SiC tip) or melt printed on the surface using a template. These modifications might produce hemi-wicking or superhydrophobicity. The holder exposes the surface of the substrate to the flow.
    • 在示例性实施例中,湿式系统包括接近头和用于衬底的保持器(例如,半导体晶片)。 邻近头部构造成使得弯液面中的水性流体流过邻近头部的表面。 邻近头部的表面通过流动与衬底的表面接合。 头部的表面由非反应性材料(例如热塑性材料)组成,其具有限制,维持和/或促进流动的表面形貌的修改。 关于表面形貌的修改可以用圆锥划线(例如,用金刚石或SiC尖端)刻在表面上,或者使用模板在表面上熔化印刷。 这些修饰可能产生半吸收或超疏水性。 保持器将基板的表面暴露于流动。