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1. 发明授权

US06774455B2 Semiconductor device with a collector contact in a depressed well-region 有权
标题翻译：半导体器件在凹陷阱区域具有集电极接触
公开(公告)号：US06774455B2
公开(公告)日：2004-08-10
申请号：US10262206
申请日：2002-09-30
申请人： Jeffrey A. Babcock , Christoph Dirnecker , Angelo Pinto , Scott G. Balster , Michael Schober , Alfred Haeusler
发明人： Jeffrey A. Babcock , Christoph Dirnecker , Angelo Pinto , Scott G. Balster , Michael Schober , Alfred Haeusler
IPC分类号： H01L29737
CPC分类号： H01L29/66265 , H01L29/41708 , H01L29/66272 , H01L29/7317 , H01L29/732
摘要： A method for manufacturing a semiconductor device includes forming a buried layer of a semiconductor substrate. An active region is formed adjacent at least a portion of the buried layer. At least part of the active region is removed to form a shallow trench opening. A dielectric layer is formed proximate the active region at least partially within the shallow trench opening. At least part of the dielectric layer is removed to form a collector contact region. A collector contact may be formed at the collector contact region. The collector contact may be operable to electrically contact the buried layer.
摘要翻译：半导体器件的制造方法包括形成半导体衬底的掩埋层。在掩埋层的至少一部分附近形成有源区。移除活性区域的至少一部分以形成浅沟槽开口。在浅沟槽开口内至少部分地在有源区域附近形成电介质层。去除介电层的至少一部分以形成集电极接触区域。集电极触点可以在集电极接触区域形成。集电极触点可操作以电接触埋层。

2. 发明授权

US06646323B2 Zero mask high density metal/insulator/metal capacitor 有权
公开(公告)号：US06646323B2
公开(公告)日：2003-11-11
申请号：US09849730
申请日：2001-05-04
申请人： Christoph Dirnecker , Jeffrey A. Babcock , Michael Schober , Scott G. Balster , Angelo Pinto
发明人： Christoph Dirnecker , Jeffrey A. Babcock , Michael Schober , Scott G. Balster , Angelo Pinto
IPC分类号： H01L2900
CPC分类号： H01L28/40 , H01L23/5223 , H01L28/60 , H01L2924/0002 , H01L2924/00
摘要： The present invention is directed to a structure and method of forming an integrated circuit MIM capacitor having a relatively capacitance without the need for an additional mask step. Methods of forming integrated circuit capacitors include the steps of forming a standard via and one or more enlarged vias in an electrically insulating layer during the same patterning process and then forming an electrically conductive first electrode layer which fills the standard via and overlays the enlarged vias in a conformal manner. A dielectric layer is then formed over the electrically conductive first electrode layer. Next, an electrically conductive second electrode layer is formed over the dielectric layer, which overlays and/or fills the enlarged vias. A step is then performed to planarize the second electrode layer, the dielectric layer, and the first electrode layer to define the electrodes of a capacitor. The resulting capacitor has a relatively large effective electrode surface area (which is a function of the depth of the via) for a given lateral dimension.

3. 发明授权

US07164186B2 Structure of semiconductor device with sinker contact region 有权
标题翻译：具有沉降片接触区域的半导体器件的结构
公开(公告)号：US07164186B2
公开(公告)日：2007-01-16
申请号：US10939221
申请日：2004-09-10
申请人： Angelo Pinto , Jeffrey A. Babcock , Michael Schober , Scott G. Balster , Christoph Dirnecker
发明人： Angelo Pinto , Jeffrey A. Babcock , Michael Schober , Scott G. Balster , Christoph Dirnecker
IPC分类号： H01L29/70
CPC分类号： H01L29/66272 , H01L29/41708
摘要： A method for manufacturing a semiconductor device includes forming a buried layer of a semiconductor substrate. An active region is formed adjacent at least a portion of the buried layer. A first isolation structure is formed adjacent at least a portion of the buried layer. A second isolation structure is formed adjacent at least a portion of the active region. A base layer is formed adjacent at least a portion of the active region. A dielectric layer is formed adjacent at least a portion of the base layer, and then at least part of the dielectric layer is removed at an emitter contact location and at a sinker contact location. An emitter structure is formed at the emitter contact location. Forming the emitter structure includes etching the semiconductor device at the sinker contact location to form a sinker contact region. The sinker contact region has a first depth. The method may also include forming a gate structure. Forming the gate structure includes etching the sinker contact region thereby increasing the first depth of the sinker contact region to a second depth.
摘要翻译：半导体器件的制造方法包括形成半导体衬底的掩埋层。在掩埋层的至少一部分附近形成有源区。在掩埋层的至少一部分附近形成第一隔离结构。在活性区域的至少一部分附近形成第二隔离结构。在活性区域的至少一部分附近形成基底层。在基底层的至少一部分附近形成电介质层，然后在发射极接触位置和沉降片接触位置移除介电层的至少一部分。发射极结构形成在发射极接触位置。形成发射极结构包括在沉降片接触位置蚀刻半导体器件以形成沉降片接触区域。沉降片接触区域具有第一深度。该方法还可以包括形成栅极结构。形成栅极结构包括蚀刻沉降片接触区域，从而将沉降片接触区域的第一深度增加到第二深度。

4. 发明授权

US06806159B2 Method for manufacturing a semiconductor device with sinker contact region 有权
标题翻译：制造具有沉降片接触区域的半导体器件的方法
公开(公告)号：US06806159B2
公开(公告)日：2004-10-19
申请号：US10262211
申请日：2002-09-30
申请人： Angelo Pinto , Jeffrey A. Babcock , Michael Schober , Scott G. Balster , Christoph Dirnecker
发明人： Angelo Pinto , Jeffrey A. Babcock , Michael Schober , Scott G. Balster , Christoph Dirnecker
IPC分类号： H01L21331
CPC分类号： H01L29/66272 , H01L29/41708
摘要： A method for manufacturing a semiconductor device includes forming a buried layer of a semiconductor substrate. An active region is formed adjacent at least a portion of the buried layer. A first isolation structure is formed adjacent at least a portion of the buried layer. A second isolation structure is formed adjacent at least a portion of the active region. A base layer is formed adjacent at least a portion of the active region. A dielectric layer is formed adjacent at least a portion of the base layer, and then at least part of the dielectric layer is removed at an emitter contact location and at a sinker contact location. An emitter structure is formed at the emitter contact location. Forming the emitter structure includes etching the semiconductor device at the sinker contact location to form a sinker contact region. The sinker contact region has a first depth. The method may also include forming a gate structure. Forming the gate structure includes etching the sinker contact region thereby increasing the first depth of the sinker contact region to a second depth.
摘要翻译：半导体器件的制造方法包括形成半导体衬底的掩埋层。在掩埋层的至少一部分附近形成有源区。在掩埋层的至少一部分附近形成第一隔离结构。在活性区域的至少一部分附近形成第二隔离结构。在活性区域的至少一部分附近形成基底层。在基底层的至少一部分附近形成电介质层，然后在发射极接触位置和沉降片接触位置移除介电层的至少一部分。发射极结构形成在发射极接触位置。形成发射极结构包括在沉降片接触位置蚀刻半导体器件以形成沉降片接触区域。沉降片接触区域具有第一深度。该方法还可以包括形成栅极结构。形成栅极结构包括蚀刻沉降片接触区域，从而将沉降片接触区域的第一深度增加到第二深度。

5. 发明授权

US06391707B1 Method of manufacturing a zero mask high density metal/insulator/metal capacitor 有权
标题翻译：制造零掩模高密度金属/绝缘体/金属电容器的方法
公开(公告)号：US06391707B1
公开(公告)日：2002-05-21
申请号：US09849299
申请日：2001-05-04
申请人： Christoph Dirnecker , Jeffrey A. Babcock , Michael Schober , Scott G. Balster , Angelo Pinto
发明人： Christoph Dirnecker , Jeffrey A. Babcock , Michael Schober , Scott G. Balster , Angelo Pinto
IPC分类号： H01L218242
CPC分类号： H01L28/60 , H01L21/3212 , H01L23/5223 , H01L28/90 , H01L29/66181 , H01L2924/0002 , H01L2924/00
摘要： The present invention is directed to a structure and method of forming an integrated circuit MIM capacitor having a relatively capacitance without the need for an additional mask step. Methods of forming integrated circuit capacitors include the steps of forming a standard via and one or more enlarged vias in an electrically insulating layer during the same patterning process and then forming an electrically conductive first electrode layer which fills the standard via and overlays the enlarged vias in a conformal manner. A dielectric layer is then formed over the electrically conductive first electrode layer. Next, an electrically conductive second electrode layer is formed over the dielectric layer, which overlays and/or fills the enlarged vias. A step is then performed to planarize the second electrode layer, the dielectric layer, and the first electrode layer to define the electrodes of a capacitor. The resulting capacitor has a relatively large effective electrode surface area (which is a function of the depth of the via) for a given lateral dimension.
摘要翻译：本发明涉及形成具有相对电容的集成电路MIM电容器的结构和方法，而不需要额外的掩模步骤。形成集成电路电容器的方法包括以下步骤：在相同的图案化工艺期间在电绝缘层中形成标准通孔和一个或多个放大通孔，然后形成填充标准通孔的导电第一电极层并覆盖放大的通孔保形方式。然后在导电的第一电极层上形成电介质层。接下来，在电介质层上形成导电的第二电极层，覆盖和/或填充放大的通孔。然后执行步骤以使第二电极层，电介质层和第一电极层平坦化，以限定电容器的电极。对于给定的横向尺寸，所得的电容器具有相对较大的有效电极表面积（其是通孔的深度的函数）。

6. 发明申请

US20050037588A1 Method for manufacturing and structure of semiconductor device with sinker contact region 有权
标题翻译：具有沉降片接触区域的半导体器件的制造和结构的方法
公开(公告)号：US20050037588A1
公开(公告)日：2005-02-17
申请号：US10939221
申请日：2004-09-10
申请人： Angelo Pinto , Jeffrey Babcock , Michael Schober , Scott Balster , Christoph Dirnecker
发明人： Angelo Pinto , Jeffrey Babcock , Michael Schober , Scott Balster , Christoph Dirnecker
IPC分类号： H01L21/331 , H01L29/417 , H01L27/082 , H01L21/8222
CPC分类号： H01L29/66272 , H01L29/41708
摘要： A method for manufacturing a semiconductor device includes forming a buried layer of a semiconductor substrate. An active region is formed adjacent at least a portion of the buried layer. A first isolation structure is formed adjacent at least a portion of the buried layer. A second isolation structure is formed adjacent at least a portion of the active region. A base layer is formed adjacent at least a portion of the active region. A dielectric layer is formed adjacent at least a portion of the base layer, and then at least part of the dielectric layer is removed at an emitter contact location and at a sinker contact location. An emitter structure is formed at the emitter contact location. Forming the emitter structure includes etching the semiconductor device at the sinker contact location to form a sinker contact region. The sinker contact region has a first depth. The method may also include forming a gate structure. Forming the gate structure includes etching the sinker contact region thereby increasing the first depth of the sinker contact region to a second depth.
摘要翻译：半导体器件的制造方法包括形成半导体衬底的掩埋层。在掩埋层的至少一部分附近形成有源区。在掩埋层的至少一部分附近形成第一隔离结构。在活性区域的至少一部分附近形成第二隔离结构。在活性区域的至少一部分附近形成基底层。在基底层的至少一部分附近形成电介质层，然后在发射极接触位置和沉降片接触位置移除介电层的至少一部分。发射极结构形成在发射极接触位置。形成发射极结构包括在沉降片接触位置蚀刻半导体器件以形成沉降片接触区域。沉降片接触区域具有第一深度。该方法还可以包括形成栅极结构。形成栅极结构包括蚀刻沉降片接触区域，从而将沉降片接触区域的第一深度增加到第二深度。

7. 发明授权

US08695215B2 Method for installing an assembly 失效
标题翻译：安装组件的方法
公开(公告)号：US08695215B2
公开(公告)日：2014-04-15
申请号：US12430183
申请日：2009-04-27
申请人： Michael Schober
发明人： Michael Schober
IPC分类号： B23P11/02
CPC分类号： F16F15/264 , F16C19/54 , F16C35/06 , F16C2361/53 , F16F15/267 , Y10T29/49231 , Y10T29/49865 , Y10T403/48
摘要： The invention relates to a method for the assembly of a balance shaft unit for use in motor vehicles. The assembly includes a housing having a bearing section, a rotating component and at least one rolling element bearing for the axially fixed journaling of the rotating component in the bearing section of the housing. The rolling element bearing has a first ring section associated with the rotating component and a second ring section associated with the bearing section. First, the rolling element bearing is axially fixedly installed on the rotating component or in the bearing section. Next, the rotating component is cooled and/or the housing part is heated. Finally, the rotating component is introduced into the bearing section and is held until a temperature compensation has taken place between the rotating component and the housing such that a shrink-fit connection is established.
摘要翻译：本发明涉及一种用于组装用于机动车辆的平衡轴单元的方法。该组件包括具有轴承部分，旋转部件和至少一个滚动元件轴承的壳体，用于在壳体的轴承部分中轴向固定的旋转部件的轴颈。滚动元件轴承具有与旋转部件相关联的第一环部分和与轴承部分相关联的第二环部分。首先，滚动体轴承轴向固定地安装在旋转部件上或轴承部分中。接下来，旋转部件被冷却和/或壳体部分被加热。最后，旋转部件被引入到轴承部分中并保持直到在旋转部件和壳体之间发生温度补偿，从而形成收缩配合连接。

8. 发明授权

US08100105B2 Balance shaft unit 有权
标题翻译：平衡轴单元
公开(公告)号：US08100105B2
公开(公告)日：2012-01-24
申请号：US12313861
申请日：2008-11-25
申请人： Michael Schober , Andreas Hoelzl , Roland Marzy
发明人： Michael Schober , Andreas Hoelzl , Roland Marzy
IPC分类号： F02B75/06 , F01M1/02
CPC分类号： F16F15/264 , Y10T29/49231 , Y10T74/2183 , Y10T74/2184
摘要： The present invention relates to a balance shaft unit for mass balancing for an internal combustion engine of a motor vehicle including at least one balance shaft having at least one balance weight and a housing part in which the balance shaft is journaled. A first gear is associated with the balance shaft and meshes with a second gear. An introduction passage is formed in the housing part through which, starting from an assembly opening, at least one of the two gears can be introduced into the interior of the housing part, with the introduction passage extending perpendicular to the longitudinal axis of the balance shaft. The first gear and the second gear are arranged sequentially with respect to the direction of extent of the introduction passage. The housing part surrounds the periphery of the assembly opening in one piece, with the length of the assembly opening at the outer side of the housing part in a normal plane to the longitudinal axis of the balance shaft being smaller than the sum of the diameters of the two gears. A particularly high stability is hereby reached.
摘要翻译：本发明涉及一种用于机动车辆的内燃机的质量平衡的平衡轴单元，其包括至少一个平衡轴，该至少一个平衡轴具有至少一个平衡重，并且该平衡轴被安装在该壳体部分中。第一齿轮与平衡轴相关联并与第二档啮合。引导通道形成在壳体部分中，从组装开口开始，两个齿轮中的至少一个可以被引入壳体部分的内部，导入通道垂直于平衡轴的纵向轴线延伸。第一齿轮和第二齿轮相对于导入通道的方向依次布置。壳体部分围绕组件开口的周边一体，其中组件开口的长度在壳体部分的外侧处于与平衡轴的纵向轴线的法向平面中的直径小于两档。因此达到特别高的稳定性。

9. 发明申请

US20090133661A1 Balance shaft unit 有权
标题翻译：平衡轴单元
公开(公告)号：US20090133661A1
公开(公告)日：2009-05-28
申请号：US12313861
申请日：2008-11-25
申请人： Michael Schober , Andreas Holzl , Roland Marzy
发明人： Michael Schober , Andreas Holzl , Roland Marzy
IPC分类号： F16F15/26 , F02B75/06 , F16F15/22 , B23P11/00
CPC分类号： F16F15/264 , Y10T29/49231 , Y10T74/2183 , Y10T74/2184
摘要： The present invention relates to a balance shaft unit for mass balancing for an internal combustion engine of a motor vehicle including at least one balance shaft having at least one balance weight and a housing part in which the balance shaft is journaled. A first gear is associated with the balance shaft and meshes with a second gear. An introduction passage is formed in the housing part through which, starting from an assembly opening, at least one of the two gears can be introduced into the interior of the housing part, with the introduction passage extending perpendicular to the longitudinal axis of the balance shaft. The first gear and the second gear are arranged sequentially with respect to the direction of extent of the introduction passage. The housing part surrounds the periphery of the assembly opening in one piece, with the length of the assembly opening at the outer side of the housing part in a normal plane to the longitudinal axis of the balance shaft being smaller than the sum of the diameters of the two gears. A particularly high stability is hereby reached.
摘要翻译：本发明涉及一种用于机动车辆的内燃机的质量平衡的平衡轴单元，其包括至少一个平衡轴，该至少一个平衡轴具有至少一个平衡重，并且该平衡轴被安装在该壳体部分中。第一齿轮与平衡轴相关联并与第二档啮合。引导通道形成在壳体部分中，从组装开口开始，两个齿轮中的至少一个可以被引入壳体部分的内部，导入通道垂直于平衡轴的纵向轴线延伸。第一齿轮和第二齿轮相对于导入通道的方向依次布置。壳体部分围绕组件开口的周边一体，其中组件开口的长度在壳体部分的外侧处于与平衡轴的纵向轴线的法向平面中的直径小于两档。因此达到特别高的稳定性。

10. 发明授权

US08757115B2 Camshaft adjuster with device for emergency operation 失效
标题翻译：凸轮轴调节器，用于紧急操作
公开(公告)号：US08757115B2
公开(公告)日：2014-06-24
申请号：US13461830
申请日：2012-05-02
申请人： Michael Schober
发明人： Michael Schober
IPC分类号： F01L1/34
CPC分类号： F01L1/352 , F01L2001/34459 , F01L2250/02 , F01L2800/12 , F01L2820/032 , F01L2820/035
摘要： An adjustment device for adjusting the relative angular position of a camshaft with respect to a crankshaft within a specified angle range, the adjustment device having a device for emergency operation of the adjustment device. The device for emergency operation includes a freewheel device which can be activated in an emergency mode of the adjustment device and, in an activated state, is able to allow an adjustment movement of the camshaft with respect to the crankshaft from the current position in a first direction towards an emergency running position and to block an adjustment movement in a second direction opposite thereto.
摘要翻译：一种调节装置，用于调节凸轮轴相对于曲轴在相对角度范围内的相对角位置，该调节装置具有用于调节装置的紧急操作的装置。用于紧急操作的装置包括可在调节装置的紧急模式下被启动的自由轮装置，并且在激活状态下，能够允许凸轮轴相对于曲轴从当前位置在第一方向朝向紧急行驶位置，并阻止与其相反的第二方向的调节运动。

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