会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明申请
    • METHOD AND STRUCTURE FOR MULTI-CORE CHIP PRODUCT TEST AND SELECTIVE VOLTAGE BINNING DISPOSITION
    • 多核芯片产品测试和选择性电压调整处理方法与结构
    • US20140024145A1
    • 2014-01-23
    • US13553986
    • 2012-07-20
    • JEANNE P. BICKFORDVikram IyengarRahul K. NadkarniPascal A. Nsame
    • JEANNE P. BICKFORDVikram IyengarRahul K. NadkarniPascal A. Nsame
    • H01L21/66G01R31/02G06F19/00
    • G01R31/31718G01R31/31725G06F1/32
    • Operating speeds of integrated circuit devices are tested to establish maximum and minimum frequency at maximum and minimum voltage. The devices are sorted into relatively-slow and relatively-fast devices to classify the devices into different voltage bins. A bin-specific voltage limit is established for each of the voltage bins needed for core performance at system use conditions. The bin-specific voltage limit is compared to core minimum chip-level functionality voltage at system maximum and minimum frequency specifications. The method correlates system design evaluation of design maximum and minimum frequency at design maximum and minimum voltage conditions with evaluation of tested maximum and minimum frequency at tested maximum and minimum voltage conditions. A chip-specific functionality voltage limit is established for the device. Initial system voltage for all devices from a voltage bin is set at a greater of the bin-specific voltage limit and the chip-specific functionality voltage limit consistent with the evaluation conditions.
    • 测试集成电路器件的工作速度,以在最大和最小电压下建立最大和最小频率。 将器件分类为相对较慢且相对较快的器件,以将器件分类到不同的电压仓。 对于在系统使用条件下核心性能所需的每个电压箱,建立了一个特定于特定电压限制。 特定于箱体的电压限制与系统最大和最小频率规格下的核心最小芯片级功能电压进行比较。 该方法在设计最大和最小电压条件下将设计最大和最小频率的系统设计评估与测试的最大和最小电压条件下的最大和最小频率进行了评估。 为器件建立芯片专用功能电压限制。 来自电压仓的所有器件的初始系统电压设置在特定于器件的电压限制和芯片专用功能电压限制的更大值与评估条件一致。
    • 2. 发明授权
    • Method and structure for multi-core chip product test and selective voltage binning disposition
    • 多核芯片产品测试和选择性电压组合配置的方法和结构
    • US09557378B2
    • 2017-01-31
    • US13553986
    • 2012-07-20
    • Jeanne P. BickfordVikram IyengarRahul K. NadkarniPascal A. Nsame
    • Jeanne P. BickfordVikram IyengarRahul K. NadkarniPascal A. Nsame
    • H01L21/66G01R31/02G06F19/00G01R31/317G06F1/32
    • G01R31/31718G01R31/31725G06F1/32
    • Operating speeds of integrated circuit devices are tested to establish maximum and minimum frequency at maximum and minimum voltage. The devices are sorted into relatively-slow and relatively-fast devices to classify the devices into different voltage bins. A bin-specific voltage limit is established for each of the voltage bins needed for core performance at system use conditions. The bin-specific voltage limit is compared to core minimum chip-level functionality voltage at system maximum and minimum frequency specifications. The method correlates system design evaluation of design maximum and minimum frequency at design maximum and minimum voltage conditions with evaluation of tested maximum and minimum frequency at tested maximum and minimum voltage conditions. A chip-specific functionality voltage limit is established for the device. Initial system voltage for all devices from a voltage bin is set at a greater of the bin-specific voltage limit and the chip-specific functionality voltage limit consistent with the evaluation conditions.
    • 测试集成电路器件的工作速度,以在最大和最小电压下建立最大和最小频率。 将器件分类为相对较慢且相对较快的器件,以将器件分类到不同的电压仓。 对于在系统使用条件下核心性能所需的每个电压箱,建立了一个特定于特定电压限制。 特定于箱体的电压限制与系统最大和最小频率规格下的核心最小芯片级功能电压进行比较。 该方法在设计最大和最小电压条件下将设计最大和最小频率的系统设计评估与测试的最大和最小电压条件下的最大和最小频率进行了评估。 为器件建立芯片专用功能电压限制。 来自电压仓的所有器件的初始系统电压设置在特定于器件的电压限制和芯片专用功能电压限制的更大值与评估条件一致。
    • 8. 发明申请
    • APPARATUS FOR REDUCING LEAKAGE IN GLOBAL BIT-LINE ARCHITECTURES
    • 降低全球排列结构泄漏的装置
    • US20090147590A1
    • 2009-06-11
    • US11950459
    • 2007-12-05
    • Anthony Correale, JR.Rahul K. Nadkarni
    • Anthony Correale, JR.Rahul K. Nadkarni
    • G11C7/00
    • G11C7/12G11C7/1051G11C7/1069G11C7/18
    • A circuit for reducing current leakage in hierarchical bit-line architectures includes a sense amplifier having transistors, the sense amplifier coupled to bit-lines of cells in a memory array, the sense amplifier configured for detecting stored data from one of the cells; an output latch having transistors, the output latch selectively coupled to a global bit-line of the sense amplifier having a logical state, the output latch configured for selectively reading out stored data from one of the cells through the global bit-line; and a transmission gating device coupled between the sense amplifier and the output latch for selectively coupling the sense amplifier to the output latch correspondingly eliminating a first leakage path and forming a second leakage path, the first leakage path being between the sense amplifier and the output latch, the second leakage path formed within the sense amplifier.
    • 用于降低分级位线架构中的电流泄漏的电路包括具有晶体管的读出放大器,读出放大器耦合到存储器阵列中的单元的位线,该读出放大器配置用于检测来自其中一个单元的存储数据; 具有晶体管的输出锁存器,所述输出锁存器选择性地耦合到具有逻辑状态的所述读出放大器的全局位线,所述输出锁存器被配置为经由所述全局位线选择性地从所述单元之一读出存储的数据; 以及耦合在所述读出放大器和所述输出锁存器之间的传输选通装置,用于选择性地将所述读出放大器耦合到所述输出锁存器,以相应地消除第一泄漏路径并形成第二泄漏路径,所述第一泄漏路径位于所述读出放大器和所述输出锁存器 ,形成在读出放大器内的第二泄漏路径。