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1. 发明申请

US20060014333A1 Anchoring, by lateral oxidizing, of patterns of a thin film to prevent the dewetting phenomenon 失效
公开(公告)号：US20060014333A1
公开(公告)日：2006-01-19
申请号：US11178337
申请日：2005-07-12
申请人： Jean-Charles Barbe , Maud Vinet , Beatrice Drevet , Carine Jahan
发明人： Jean-Charles Barbe , Maud Vinet , Beatrice Drevet , Carine Jahan
IPC分类号： H01L21/84 , H01L21/44 , H01L21/20
CPC分类号： H01L21/78 , H01L21/76205 , H01L21/76281 , H01L21/84 , H01L21/86
摘要： The invention relates to a thin film having a thickness of less than 10 nm, made of oxidizable semi-conductor material and patterned in the form of patterns. To prevent the dewetting phenomenon of said patterns, lateral oxidized zones are arranged at the periphery of each pattern of the thin film so as to form an anchoring. This anchoring can be achieved by forming an oxide layer over the whole of the thin film and then depositing a nitride layer. Then the nitride and oxide layers and the thin film are patterned and the thin film is laterally oxidized so that each pattern of the thin film comprises, at the periphery thereof, an oxidized zone of predetermined width. The nitride and oxide layers are then removed so as to release the patterns oxidized at their periphery.

2. 发明授权

US07510919B2 Anchoring, by lateral oxidizing, of patterns of a thin film to prevent the dewetting phenomenon 失效
标题翻译：通过横向氧化锚定薄膜的图案以防止去湿现象
公开(公告)号：US07510919B2
公开(公告)日：2009-03-31
申请号：US11178337
申请日：2005-07-12
申请人： Jean-Charles Barbe , Maud Vinet , Béatrice Drevet , Carine Jahan
发明人： Jean-Charles Barbe , Maud Vinet , Béatrice Drevet , Carine Jahan
IPC分类号： H01L21/84
CPC分类号： H01L21/78 , H01L21/76205 , H01L21/76281 , H01L21/84 , H01L21/86
摘要： The invention relates to a thin film having a thickness of less than 10 nm, made of oxidizable semi-conductor material and patterned in the form of patterns. To prevent the dewetting phenomenon of said patterns, lateral oxidized zones are arranged at the periphery of each pattern of the thin film so as to form an anchoring.This anchoring can be achieved by forming an oxide layer over the whole of the thin film and then depositing a nitride layer. Then the nitride and oxide layers and the thin film are patterned and the thin film is laterally oxidized so that each pattern of the thin film comprises, at the periphery thereof, an oxidized zone of predetermined width. The nitride and oxide layers are then removed so as to release the patterns oxidized at their periphery.
摘要翻译：本发明涉及厚度小于10nm的薄膜，由可氧化半导体材料制成并以图案形式图案化。为了防止所述图案的去湿现象，横向氧化区被布置在薄膜的每个图案的周边，以形成锚定。该锚定可以通过在整个薄膜上形成氧化物层然后沉积氮化物层来实现。然后对氮化物和氧化物层和薄膜进行图案化，并且薄膜被横向氧化，使得薄膜的每个图案在其周围包含预定宽度的氧化区。然后去除氮化物和氧化物层，以便释放在其周边氧化的图案。

3. 发明申请

US20060121653A1 Method for insulating patterns formed in a thin film of oxidizable semi-conducting material 失效
公开(公告)号：US20060121653A1
公开(公告)日：2006-06-08
申请号：US11291918
申请日：2005-12-02
申请人： Maud Vinet , Jean-Charles Barbe , Bernard Previtali , Thierry Poiroux
发明人： Maud Vinet , Jean-Charles Barbe , Bernard Previtali , Thierry Poiroux
IPC分类号： H01L21/84 , H01L21/00
CPC分类号： H01L21/76202
摘要： A method for insulating patterns formed in a thin film made of a first oxidizable semi-conducting material, with a thickness less than or equal to 20 nm and preferably less than or equal to 10 nm, successively comprises: formation, on the thin film, of a mask defining, in the thin film, free zones and zones covered by the mask designed to substantially form the patterns, selective formation, at the level of the free zones of the thin film, of an additional layer formed by an oxide of a second semi-conducting material, oxidization of the free zones of the thin film, removal of the mask so as to release the thin film patterned in the form of patterns insulated by oxidized zones. The first and second semi-conducting materials can be identical and the step of selective formation of the additional layer can be performed by selective epitaxial growth of the free zones of the thin film.

4. 发明申请

US20060060846A1 Thin layer element and associated fabrication process 有权
公开(公告)号：US20060060846A1
公开(公告)日：2006-03-23
申请号：US11211255
申请日：2005-08-19
申请人： Jean-Charles Barbe , Maud Vinet , Olivier Faynot
发明人： Jean-Charles Barbe , Maud Vinet , Olivier Faynot
IPC分类号： H01L29/02 , H01L21/425
CPC分类号： H01L21/26586
摘要： A method is provided for fabricating a thin layer element, in which a layer of a first material supports a pattern of a second material having a thickness of less than 15 nm, including a step of doping by implanting a chemical species over at least a portion of the layer-pattern assembly to stabilize the pattern on the layer.

5. 发明授权

US07579226B2 Thin layer element and associated fabrication process 有权
标题翻译：薄层元件及相关制造工艺
公开(公告)号：US07579226B2
公开(公告)日：2009-08-25
申请号：US11211255
申请日：2005-08-19
申请人： Jean-Charles Barbe , Maud Vinet , Olivier Faynot
发明人： Jean-Charles Barbe , Maud Vinet , Olivier Faynot
IPC分类号： H01L21/00
CPC分类号： H01L21/26586
摘要： A method is provided for fabricating a thin layer element, in which a layer of a first material supports a pattern of a second material having a thickness of less than 15 nm, including a step of doping by implanting a chemical species over at least a portion of the layer-pattern assembly to stabilize the pattern on the layer.
摘要翻译：提供了一种用于制造薄层元件的方法，其中第一材料层支撑厚度小于15nm的第二材料的图案，包括通过在至少一部分上植入化学物质来掺杂的步骤的层图案组件以使层上的图案稳定。

6. 发明申请

US20060019459A1 Method for forming a structure provided with at least one zone of one or several semiconductor nanocrystals localised with precision 有权
标题翻译：形成具有精确定位的一个或多个半导体纳米晶体的至少一个区域的结构的方法
公开(公告)号：US20060019459A1
公开(公告)日：2006-01-26
申请号：US11183993
申请日：2005-07-19
申请人： Maud Vinet , Jean-Charles Barbe , Pierre Mur , Francois De Crecy
发明人： Maud Vinet , Jean-Charles Barbe , Pierre Mur , Francois De Crecy
IPC分类号： H01L21/331 , H01L21/44
CPC分类号： C30B29/60 , B82Y10/00 , H01L29/66439 , H01L29/7613 , Y10S438/962
摘要： Method for forming a structure provided with at least one zone of one or several semiconductor nanocrystals (13). It consists in: exposing with a beam of electrons (11) at least one zone (12) of a semiconductor film (1) lying on an electrically insulating support (2), the exposed zone (12) contributing to defining at least one dewetting zone (10) of the film (1), annealing the film (1) at high temperature in such a way that the dewetting zone (10) retracts giving the zone of one or several nanocrystals (13).
摘要翻译：用于形成具有一个或多个半导体纳米晶体（13）的至少一个区域的结构的方法。它包括：用电子束（11）暴露位于电绝缘支撑件（2）上的半导体膜（1）的至少一个区域（12），所述暴露区域（12）有助于限定至少一个去湿（1）的区域（10），在高温下使膜（1）退火，使得去湿区（10）缩回，给出一个或多个纳米晶体（13）的区域。

7. 发明授权

US07713850B2 Method for forming a structure provided with at least one zone of one or several semiconductor nanocrystals localised with precision 有权
标题翻译：形成具有精确定位的一个或多个半导体纳米晶体的至少一个区域的结构的方法
公开(公告)号：US07713850B2
公开(公告)日：2010-05-11
申请号：US11183993
申请日：2005-07-19
申请人： Maud Vinet , Jean-Charles Barbe , Pierre Mur , François De Crecy
发明人： Maud Vinet , Jean-Charles Barbe , Pierre Mur , François De Crecy
IPC分类号： H01L21/20
CPC分类号： C30B29/60 , B82Y10/00 , H01L29/66439 , H01L29/7613 , Y10S438/962
摘要： Method for forming a structure provided with at least one zone of one or several semiconductor nanocrystals (13). It consists in: exposing with a beam of electrons (11) at least one zone (12) of a semiconductor film (1) lying on an electrically insulating support (2), the exposed zone (12) contributing to defining at least one dewetting zone (10) of the film (1), annealing the film (1) at high temperature in such a way that the dewetting zone (10) retracts giving the zone of one or several nanocrystals (13).
摘要翻译：用于形成具有一个或多个半导体纳米晶体（13）的至少一个区域的结构的方法。它包括：用电子束（11）暴露位于电绝缘支撑件（2）上的半导体膜（1）的至少一个区域（12），所述暴露区域（12）有助于限定至少一个去湿（1）的区域（10），在高温下使膜（1）退火，使得去湿区（10）缩回，给出一个或多个纳米晶体（13）的区域。

8. 发明授权

US07473588B2 Method for insulating patterns formed in a thin film of oxidizable semi-conducting material 失效
标题翻译：在可氧化半导体材料薄膜中形成绝缘图案的方法
公开(公告)号：US07473588B2
公开(公告)日：2009-01-06
申请号：US11291918
申请日：2005-12-02
申请人： Maud Vinet , Jean-Charles Barbe , Bernard Previtali , Thierry Poiroux
发明人： Maud Vinet , Jean-Charles Barbe , Bernard Previtali , Thierry Poiroux
IPC分类号： H01L21/00
CPC分类号： H01L21/76202
摘要： A method for insulating patterns formed in a thin film made of a first oxidizable semi-conducting material, with a thickness less than or equal to 20 nm and preferably less than or equal to 10 nm, successively comprises: formation, on the thin film, of a mask defining, in the thin film, free zones and zones covered by the mask designed to substantially form the patterns, selective formation, at the level of the free zones of the thin film, of an additional layer formed by an oxide of a second semi-conducting material, oxidization of the free zones of the thin film, removal of the mask so as to release the thin film patterned in the form of patterns insulated by oxidized zones. The first and second semi-conducting materials can be identical and the step of selective formation of the additional layer can be performed by selective epitaxial growth of the free zones of the thin film.
摘要翻译：一种绝缘图案，其形成在厚度小于或等于20nm，优选小于或等于10nm的第一可氧化半导电材料制成的薄膜中，依次包括：在薄膜上形成，在薄膜中限定由掩模覆盖的自由区域和设置成基本上形成图案的区域，在薄膜的自由区域的选择性地形成由氧化物形成的附加层第二半导体材料，氧化薄膜的自由区域，去除掩模，以便释放以氧化区形式绝缘的图案图案化的薄膜。第一和第二半导体材料可以是相同的，并且选择性地形成附加层的步骤可以通过薄膜的自由区域的选择性外延生长来进行。

9. 发明授权

US08236698B2 Method for forming non-aligned microcavities of different depths 有权
标题翻译：用于形成不同深度的不对齐微腔的方法
公开(公告)号：US08236698B2
公开(公告)日：2012-08-07
申请号：US12519356
申请日：2007-12-20
申请人： Jean-Charles Barbe , Erwan Dornel , François De Crecy , Joël Eymery
发明人： Jean-Charles Barbe , Erwan Dornel , François De Crecy , Joël Eymery
IPC分类号： H01L21/311
CPC分类号： B81C1/00047 , B01L3/5027 , B81B2201/058 , B81B2203/0384
摘要： The invention relates to a method for forming microcavities (118) of different depths in a layer (102) based on at least an amorphous or monocrystalline material, comprising at least the following steps in which: at least one shaft and/or trench is formed in the layer (102) so as to extend through one face (101) thereof, such that two sections of the shaft and/or the trench, in two different planes parallel to the face (101), are aligned in relation to one another along an alignment axis forming a non-zero angle with a normal to the plane of said face (101); and the layer (102) is annealed in a hydrogenated atmosphere so as to transform the shaft and/or trench into at least two microcavities (118).
摘要翻译：本发明涉及一种基于至少一种非晶或单晶材料形成层（102）中不同深度的微腔（118）的方法，该方法至少包括以下步骤，其中：形成至少一个轴和/或沟槽在所述层（102）中延伸通过其一个面（101），使得所述轴和/或所述沟槽的两个平行于所述面（101）的不同平面中的两个部分相对于彼此对准沿着与所述面（101）的平面垂直的非零角度的对准轴线; 并且所述层（102）在氢化气氛中退火，以便将所述轴和/或沟槽转变成至少两个微腔（118）。

10. 发明申请

US20090124050A1 METHOD OF MANUFACTURING NANOWIRES PARALLEL TO THE SUPPORTING SUBSTRATE 有权
标题翻译：将纳米尺寸平行于支撑基板的方法
公开(公告)号：US20090124050A1
公开(公告)日：2009-05-14
申请号：US12267431
申请日：2008-11-07
申请人： Erwan Dornel , Jean-Charles Barbe , Thomas Ernst
发明人： Erwan Dornel , Jean-Charles Barbe , Thomas Ernst
IPC分类号： H01L21/335 , H01L21/20
CPC分类号： H01L29/42392 , B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/125 , H01L29/66439 , H01L29/7613 , H01L29/775 , H01L29/78645 , H01L29/78696
摘要： A method of manufacturing at least one nanowire, the nanowire being parallel to its supporting substrate, the method comprising: the formation on the supporting substrate of a structure comprising a bar and two regions, a first end of the bar being secured to one of the two regions and a second end of the bar being secured to the other region, the width of the bar being less than the width of the regions, the subjection of the bar to an annealing under gaseous atmosphere in order to transform the bar into a nanowire, the annealing being carried out under conditions allowing control of the sizing of the neck produced during the formation of the nanowire.
摘要翻译：一种制造至少一个纳米线的方法，所述纳米线平行于其支撑衬底，所述方法包括：在所述支撑衬底上形成包括棒和两个区域的结构，所述棒的第一端固定到两个区域和杆的第二端固定到另一个区域，杆的宽度小于区域的宽度，在棒状气体气氛下退火以将棒转变成纳米线退火在允许控制在纳米线形成期间产生的颈部上浆的条件下进行。

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