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1. 发明申请

US20050205884A1 Semiconductor light emitting devices including in-plane light emitting layers 失效
标题翻译：包括平面内发光层的半导体发光器件
公开(公告)号：US20050205884A1
公开(公告)日：2005-09-22
申请号：US10805424
申请日：2004-03-19
申请人： Jarnes Kim , John Epler , Nathan Gardner , Michael Krames , Jonathan Wierer
发明人： Jarnes Kim , John Epler , Nathan Gardner , Michael Krames , Jonathan Wierer
IPC分类号： G02B5/30 , H01L33/10 , H01L33/18 , H01L33/32 , H01L33/40 , H01L33/46 , H01S5/183 , H01S5/323 , H01L33/00
CPC分类号： H01L33/18 , H01L25/0756 , H01L33/105 , H01L33/32 , H01L33/405 , H01L33/46 , H01L2924/0002 , H01L2933/0083 , H01L2924/00
摘要： A semiconductor light emitting device includes an in-plane active region that emits linearly-polarized light. An in-plane active region may include, for example, a {11{overscore (2)}0} or {10{overscore (1)}0} InGaN light emitting layer. In some embodiments, a polarizer oriented to pass light of a polarization of a majority of light emitted by the active region serves as a contact. In some embodiments, two active regions emitting the same or different colored light are separated by a polarizer oriented to pass light of a polarization of a majority of light emitted by the bottom active region, and to reflect light of a polarization of a majority of light emitted by the top active region. In some embodiments, a polarizer reflects light scattered by a wavelength converting layer.
摘要翻译：半导体发光器件包括发射线偏振光的面内有源区域。面内有源区可以包括例如{11 {过滤（20）或{10 {超（10）InGaN发光层）。在一些实施例中，定向为使通过大部分在一些实施例中，发射相同或不同着色光的两个有源区域被定向成通过底部有源区域发射的大部分光的偏振光的偏振器隔开，以及以反射由顶部有源区域发射的大部分光的偏振光。在一些实施例中，偏振器反射由波长转换层散射的光。

2. 发明申请

US20060202215A1 Polarization-reversed III-nitride light emitting device 有权
标题翻译：极化反转的III族氮化物发光器件
公开(公告)号：US20060202215A1
公开(公告)日：2006-09-14
申请号：US11080022
申请日：2005-03-14
申请人： Jonathan Wierer , M. Craford , John Epler , Michael Krames
发明人： Jonathan Wierer , M. Craford , John Epler , Michael Krames
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/0079 , H01L33/16 , H01S5/0213 , H01S5/0215 , H01S5/0217 , H01S5/02208 , H01S5/3202 , H01S5/32341 , H01S2304/00
摘要： A device structure includes a III-nitride wurtzite semiconductor light emitting region disposed between a p-type region and an n-type region. A bonded interface is disposed between two surfaces, one of the surfaces being a surface of the device structure. The bonded interface facilitates an orientation of the wurtzite c-axis in the light emitting region that confines carriers in the light emitting region, potentially increasing efficiency at high current density.
摘要翻译：器件结构包括设置在p型区域和n型区域之间的III族氮化物纤锌矿半导体发光区域。键合界面设置在两个表面之间，其中一个表面是器件结构的表面。结合界面有利于限制发光区域中的载流子的发光区域中的纤锌矿c轴的取向，在高电流密度下潜在地提高效率。

3. 发明申请

US20060014310A1 Resonant cavity III-nitride light emitting devices fabricated by growth substrate removal 审中-公开
标题翻译：通过生长衬底去除制造的谐振腔III族氮化物发光器件
公开(公告)号：US20060014310A1
公开(公告)日：2006-01-19
申请号：US11227416
申请日：2005-09-14
申请人： John Epler , Michael Krames , Jonathan Wierer
发明人： John Epler , Michael Krames , Jonathan Wierer
IPC分类号： H01L21/00
CPC分类号： H01L33/465 , H01L33/007 , H01L33/0079 , H01L33/22
摘要： A semiconductor light emitting device includes an n-type region, a p-type region, and light emitting region disposed between the n- and p-type regions. The n-type, p-type, and light emitting regions form a cavity having a top surface and a bottom surface. Both the top surface and the bottom surface of the cavity may have a rough surface. For example, the surface may have a plurality of peaks separated by a plurality of valleys. In some embodiments, the thickness of the cavity is kept constant by incorporating an etch-stop layer into the device, then thinning the layers of the device by a process that terminates on the etch-stop layer.
摘要翻译：半导体发光器件包括n型区域，p型区域和设置在n型区域和p型区域之间的发光区域。 n型，p型和发光区形成具有顶表面和底表面的空腔。空腔的顶表面和底表面都可以具有粗糙的表面。例如，表面可以具有由多个谷分隔的多个峰。在一些实施例中，通过将蚀刻停止层并入该器件中，使空腔的厚度保持恒定，然后通过终止于蚀刻停止层上的工艺使器件的层变薄。

4. 发明申请

US20060163606A1 Photonic crystal light emitting device 有权
标题翻译：光子晶体发光装置
公开(公告)号：US20060163606A1
公开(公告)日：2006-07-27
申请号：US11373636
申请日：2006-03-09
申请人： Jonathan Wierer , Michael Krames , John Epler
发明人： Jonathan Wierer , Michael Krames , John Epler
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/10 , H01L33/22 , H01L33/382 , H01L33/62 , H01L2924/0002 , H01L2933/0083 , H01L2924/00
摘要： A photonic crystal structure is formed in an n-type region of a III-nitride semiconductor structure including an active region sandwiched between an n-type region and a p-type region. A reflector is formed on a surface of the p-type region opposite the active region. In some embodiments, the growth substrate on which the n-type region, active region, and p-type region are grown is removed, in order to facilitate forming the photonic crystal in an an-type region of the device, and to facilitate forming the reflector on a surface of the p-type region underlying the photonic crystal. The photonic crystal and reflector form a resonant cavity, which may allow control of light emitted by the active region.
摘要翻译：在包括夹在n型区域和p型区域之间的有源区域的III族氮化物半导体结构的n型区域中形成光子晶体结构。在与有源区相对的p型区域的表面上形成反射体。在一些实施例中，除去其上生长n型区域，活性区域和p型区域的生长衬底，以便于在器件的类型区域中形成光子晶体，并且有利于形成在光子晶体下面的p型区域的表面上的反射器。光子晶体和反射器形成谐振腔，其可以允许控制由有源区发射的光。

5. 发明申请

US20050205883A1 Photonic crystal light emitting device 审中-公开
标题翻译：光子晶体发光装置
公开(公告)号：US20050205883A1
公开(公告)日：2005-09-22
申请号：US10804810
申请日：2004-03-19
申请人： Jonathan Wierer , Michael Krames , John Epler
发明人： Jonathan Wierer , Michael Krames , John Epler
IPC分类号： H01L33/00 , H01L33/10 , H01L33/20 , H01L33/38 , H01L33/62
CPC分类号： H01L33/0079 , H01L33/10 , H01L33/22 , H01L33/382 , H01L33/62 , H01L2924/0002 , H01L2933/0083 , H01L2924/00
摘要： A photonic crystal structure is formed in an n-type region of a III-nitride semiconductor structure including an active region sandwiched between an n-type region and a p-type region. A reflector is formed on a surface of the p-type region opposite the active region. In some embodiments, the growth substrate on which the n-type region, active region, and p-type region are grown is removed, in order to facilitate forming the photonic crystal in an an-type region of the device, and to facilitate forming the reflector on a surface of the p-type region underlying the photonic crystal. The photonic crystal and reflector form a resonant cavity, which may allow control of light emitted by the active region.
摘要翻译：在包括夹在n型区域和p型区域之间的有源区域的III族氮化物半导体结构的n型区域中形成光子晶体结构。在与有源区相对的p型区域的表面上形成反射体。在一些实施例中，除去其上生长n型区域，活性区域和p型区域的生长衬底，以便于在器件的类型区域中形成光子晶体，并且有利于形成在光子晶体下面的p型区域的表面上的反射器。光子晶体和反射器形成谐振腔，其可以允许控制由有源区发射的光。

6. 发明申请

US20060284187A1 Grown photonic crystals in semiconductor light emitting devices 有权
公开(公告)号：US20060284187A1
公开(公告)日：2006-12-21
申请号：US11156105
申请日：2005-06-17
申请人： Jonathan Wierer , Michael Krames , Nathan Gardner
发明人： Jonathan Wierer , Michael Krames , Nathan Gardner
IPC分类号： H01L27/15
CPC分类号： C30B29/60 , B82Y20/00 , G02B6/1225 , H01L33/08 , H01L33/18 , H01L33/24 , H01L2933/0083 , H01S5/105 , H01S5/34333
摘要： A photonic crystal is grown within a semiconductor structure, such as a III-nitride structure, which includes a light emitting region disposed between an n-type region and a p-type region. The photonic crystal may be multiple regions of semiconductor material separated by a material having a different refractive index than the semiconductor material. For example, the photonic crystal may be posts of semiconductor material grown in the structure and separated by air gaps or regions of masking material. Growing the photonic crystal, rather than etching a photonic crystal into an already-grown semiconductor layer, avoids damage caused by etching which may reduce efficiency, and provides uninterrupted, planar surfaces on which to form electric contacts.

7. 发明申请

US20050023549A1 SEMICONDUCTOR LIGHT EMITTING DEVICES 有权
标题翻译：半导体发光器件
公开(公告)号：US20050023549A1
公开(公告)日：2005-02-03
申请号：US10633058
申请日：2003-08-01
申请人： Nathan Gardner , Jonathan Wierer , Gerd Mueller , Michael Krames
发明人： Nathan Gardner , Jonathan Wierer , Gerd Mueller , Michael Krames
IPC分类号： H01L27/15 , H01L33/00 , H01L33/22 , H01L33/40
CPC分类号： H01L33/405 , H01L33/0004 , H01L33/22
摘要： A III-nitride device includes a first n-type layer, a first p-type layer, and an active region separating the first p-type layer and the first n-type layer. The device may include a second n-type layer and a tunnel junction separating the first and second n-type layers. First and second contacts are electrically connected to the first and second n-type layers. The first and second contacts are formed from the same material, a material with a reflectivity to light emitted by the active region greater than 75%. The device may include a textured layer disposed between the second n-type layer and the second contact or formed on a surface of a growth substrate opposite the device layers.
摘要翻译： III族氮化物器件包括第一n型层，第一p型层和分离第一p型层和第一n型层的有源区。该装置可以包括第二n型层和分隔第一和第二n型层的隧道结。第一和第二触点电连接到第一和第二n型层。第一和第二触点由相同的材料形成，对有源区域发射的光的反射率大于75％的材料形成。该器件可以包括布置在第二n型层和第二接触之间的纹理化层，或者形成在与器件层相对的生长衬底的表面上。

8. 发明申请

US20070069225A1 III-V light emitting device 审中-公开
标题翻译： III-V发光装置
公开(公告)号：US20070069225A1
公开(公告)日：2007-03-29
申请号：US11237215
申请日：2005-09-27
申请人： Michael Krames , Nathan Gardner , John Epler
发明人： Michael Krames , Nathan Gardner , John Epler
IPC分类号： H01L33/00 , H01L29/22
CPC分类号： H01L21/2654 , H01L21/76254 , H01L33/0075 , H01L33/0079 , H01S5/32341 , H01S2304/12
摘要： A semiconductor structure includes an n-type region, a p-type region, and a III-nitride light emitting layer disposed between the n-type region and the p-type region. The III-nitride light emitting layer has a lattice constant greater than 3.19 Å. Such a semiconductor structure may be grown on a substrate including a host and a seed layer bonded to the host. In some embodiments, a bonding layer bonds the host to the seed layer. The seed layer may be thinner than a critical thickness for relaxation of strain in the semiconductor structure, such that strain in the semiconductor structure is relieved by dislocations formed in the seed layer, or by gliding between the seed layer and the bonding layer an interface between the two layers. In some embodiments, the host may be separated from the semiconductor structure and seed layer by etching away the bonding layer.
摘要翻译：半导体结构包括设置在n型区域和p型区域之间的n型区域，p型区域和III族氮化物发光层。 III族氮化物发光层的晶格常数大于3.19埃。这样的半导体结构可以在包含与主体结合的主体和种子层的基板上生长。在一些实施方案中，结合层将主体结合到种子层。种子层可以比用于缓和半导体结构中的应变的临界厚度薄，使得半导体结构中的应变由种子层中形成的位错或通过在种子层和结合层之间滑动而消除，两层。在一些实施例中，可以通过蚀刻掉粘合层来将主体与半导体结构和种子层分离。

9. 发明申请

US20070072324A1 Substrate for growing a III-V light emitting device 有权
标题翻译：用于生长III-V发光器件的衬底
公开(公告)号：US20070072324A1
公开(公告)日：2007-03-29
申请号：US11237164
申请日：2005-09-27
申请人： Michael Krames , Nathan Gardner , John Epler
发明人： Michael Krames , Nathan Gardner , John Epler
IPC分类号： H01L21/00 , H01G9/20
CPC分类号： H01L21/76256 , C30B25/183 , C30B29/40 , C30B29/403 , H01L21/76254 , H01L33/007 , H01L33/0079
摘要： A substrate including a host and a seed layer bonded to the host is provided, then a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region is grown on the seed layer. In some embodiments, a bonding layer bonds the host to the seed layer. The seed layer may be thinner than a critical thickness for relaxation of strain in the semiconductor structure, such that strain in the semiconductor structure is relieved by dislocations formed in the seed layer, or by gliding between the seed layer and the bonding layer an interface between the two layers. In some embodiments, the host may be separated from the semiconductor structure and seed layer by etching away the bonding layer.
摘要翻译：提供了包括与主体结合的主体和种子层的基板，然后在种子层上生长包括设置在n型区域和p型区域之间的发光层的半导体结构。在一些实施方案中，结合层将主体结合到种子层。种子层可以比用于缓和半导体结构中的应变的临界厚度薄，使得半导体结构中的应变由种子层中形成的位错或通过在种子层和结合层之间滑动而消除，两层。在一些实施例中，可以通过蚀刻掉粘合层来将主体与半导体结构和种子层分离。

10. 发明申请

US20070267646A1 Light Emitting Device Including a Photonic Crystal and a Luminescent Ceramic 审中-公开
标题翻译：包含光子晶体和发光陶瓷的发光器件
公开(公告)号：US20070267646A1
公开(公告)日：2007-11-22
申请号：US11829799
申请日：2007-07-27
申请人： Jonathan Wierer , Serge Bierhuizen , Aurelien David , Michael Krames , Richard Weiss
发明人： Jonathan Wierer , Serge Bierhuizen , Aurelien David , Michael Krames , Richard Weiss
IPC分类号： H01L33/00
CPC分类号： H01L33/505 , B82Y20/00 , C04B35/44 , C04B35/547 , C04B35/584 , C04B35/597 , C04B35/6268 , C04B35/64 , C04B35/645 , C04B2235/3213 , C04B2235/3224 , C04B2235/3225 , C04B2235/3286 , C04B2235/6027 , C04B2235/662 , C09K11/7774 , H01L33/007 , H01L33/0079 , H01L33/105 , H01L33/20 , H01L33/405 , H01L33/501 , H01L33/58 , H01L33/60 , H01L33/644 , H01L2924/0002 , H01L2933/0083 , H01S5/105 , H01S5/34333 , H01L2924/00
摘要： A semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region and a photonic crystal formed within or on a surface of the semiconductor structure is combined with a ceramic layer which is disposed in a path of light emitted by the light emitting layer. The ceramic layer is composed of or includes a wavelength converting material such as a phosphor.
摘要翻译：包括设置在n型区域和p型区域之间的发光层和形成在半导体结构的表面内或表面上的光子晶体的半导体结构与设置在发射光的路径中的陶瓷层组合通过发光层。陶瓷层由磷光体等波长转换材料构成或包含波长转换材料。

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