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1. 发明授权

US4035276A Making coplanar layers of thin films 失效
标题翻译：制作共面层薄膜
公开(公告)号：US4035276A
公开(公告)日：1977-07-12
申请号：US681380
申请日：1976-04-29
申请人： Janos Havas , John S. Lechaton , Joseph Skinner Logan
发明人： Janos Havas , John S. Lechaton , Joseph Skinner Logan
IPC分类号： H05K3/46 , H01L21/027 , H01L21/28 , H01L21/306 , H01L21/312 , H01L21/3205 , H01L21/768 , H01L21/84 , H01L23/522 , H05K3/14 , C23C15/00
CPC分类号： H01L21/768 , H01L21/0272 , H01L21/312 , H01L21/7688 , H01L21/76885 , H01L21/84 , H01L23/522 , H01L2924/0002 , H05K3/143 , Y10S438/951 , Y10T428/24777
摘要： A method for forming coplanar thin films, particularly conductor-insulator patterns, on a substrate. A pattern which includes a first thin film and an expendable material deposited thereon is formed on the substrate. The expendable material is selected so that it can be selectively removed by an etchant which does not attack the first thin film or an insulator which is to be deposited. The second thin film is deposited by RF sputtering at a bias which is sufficiently high to cause substantial reemission of the second film. This results in the covering of the exposed substrate surfaces and the upper surface of the material with the second film but leaving the side surfaces of the material exposed. The expendable material is then chemically etched so as to lift-off both the material and the second film deposited thereon, thereby leaving a coplanar pattern of first and second thin films.In the preferred embodiment, the first thin film is a conductor and the RF sputtered second thin film is an insulator such as glass. Alternatively, the first thin film could be the insulator with the RF sputtered second film being the conductor, or both thin films could be dissimilar metals or insulators. Via hole studs, or feedthroughs, which are metallic interconnections between a first level conductive pattern (metallization) and a second level conductive pattern, may be formed by repeating substantially the same steps atop the first conductive pattern at desired locations. As many substantially coplanar levels as desired may be formed without the need for etching the second thin film.
摘要翻译：在基板上形成共面薄膜，特别是导体 - 绝缘体图案的方法。在基板上形成包括第一薄膜和沉积在其上的消耗材料的图案。选择消耗材料，使得其可以通过不侵蚀第一薄膜的蚀刻剂或要沉积的绝缘体来选择性地去除。通过RF溅射以足够高的偏压沉积第二薄膜以引起第二膜的显着再次释放。这导致用第二膜覆盖暴露的基板表面和材料的上表面，但是使材料的侧表面暴露。然后对消耗材料进行化学蚀刻，以便剥离沉积在其上的材料和第二膜，由此留下第一和第二薄膜的共面图案。

2. 发明授权

US4090006A Structure for making coplanar layers of thin films 失效
标题翻译：制造共面层薄膜的结构
公开(公告)号：US4090006A
公开(公告)日：1978-05-16
申请号：US781246
申请日：1977-03-25
申请人： Janos Havas , John S. Lechaton , Skinner Logan
发明人： Janos Havas , John S. Lechaton , Skinner Logan
IPC分类号： H05K3/46 , H01L21/027 , H01L21/28 , H01L21/306 , H01L21/312 , H01L21/3205 , H01L21/768 , H01L21/84 , H01L23/522 , H05K3/14 , C23C15/00
CPC分类号： H01L21/768 , H01L21/0272 , H01L21/312 , H01L21/7688 , H01L21/76885 , H01L21/84 , H01L23/522 , H01L2924/0002 , H05K3/143 , Y10S438/951 , Y10T428/24777
摘要： A method for forming coplanar thin films, particularly conductor-insulator patterns, on a substrate. A pattern which includes a first thin film and an expendable material deposited thereon is formed on the substrate. The expendable material is selected so that it can be selectively removed by an etchant which does not attack the first thin film or an insulator which is to be deposited. The second thin film is deposited by RF sputtering at a bias which is sufficiently high to cause substantial reemission of the second film. This results in the covering of the exposed substrate surfaces and the upper surface of the material with the second film but leaving the side surfaces of the material exposed. The expendable material is then chemically etched so as to lift-off both the material and the second film deposited thereon, thereby leaving a coplanar pattern of first and second thin films.In the preferred embodiment, the first thin film is a conductor and the RF sputtered second thin film is an insulator such as glass. Alternatively, the first thin film could be the insulator with the RF sputtered second film being the conductor, or both thin films could be dissimilar metals or insulators.
摘要翻译：在基板上形成共面薄膜，特别是导体 - 绝缘体图案的方法。在基板上形成包括第一薄膜和沉积在其上的消耗材料的图案。选择消耗材料，使得其可以通过不侵蚀第一薄膜的蚀刻剂或要沉积的绝缘体来选择性地去除。通过RF溅射以足够高的偏压沉积第二薄膜以引起第二膜的显着再次释放。这导致用第二膜覆盖暴露的基板表面和材料的上表面，但是使材料的侧表面暴露。然后对消耗材料进行化学蚀刻，以便剥离沉积在其上的材料和第二膜，由此留下第一和第二薄膜的共面图案。

3. 发明授权

US4601913A Underlay surface modification to control resin glass polymerization 失效
标题翻译：底层表面改性以控制树脂玻璃聚合
公开(公告)号：US4601913A
公开(公告)日：1986-07-22
申请号：US814581
申请日：1985-12-27
申请人： Paul N. Chaloux, Jr. , Janos Havas
发明人： Paul N. Chaloux, Jr. , Janos Havas
IPC分类号： G03F7/09 , B05D3/06
CPC分类号： G03F7/094
摘要： Three-dimensional polymerization of resin glass on an underlay surface may cause uneven distribution of the layer and therefore uneven etching of the glass layer in subsequent processing. The glass remaining after an etching step can cause difficulties in further processing of the structure, such as causing metal opens in a metallization step. In order to control the three-dimensional polymerization; the underlay surface is treated with a short plasma treatment. The plasma oxidizing step renders the surface acidic, forcing the glass polymerization to occur in a two-dimensional mode thereby eliminating the threat of uneven distribution and its repercussions.
摘要翻译：树脂玻璃在底层表面上的三维聚合可能导致层的不均匀分布，因此在随后的处理中玻璃层的不均匀蚀刻。在蚀刻步骤之后残留的玻璃在结构的进一步处理中可能导致困难，例如在金属化步骤中引起金属开放。为了控制三维聚合; 底层表面用短等离子体处理。等离子体氧化步骤使表面呈酸性，迫使玻璃聚合以二维模式发生，从而消除不均匀分布的威胁及其影响。

4. 发明授权

US5091103A Photoresist stripper 失效
标题翻译：光电剥离器
公开(公告)号：US5091103A
公开(公告)日：1992-02-25
申请号：US517105
申请日：1990-05-01
申请人： Alicia Dean , John A. Fitzsimmons , Janos Havas , Barry C. McCormick , Prabodh R. Shah
发明人： Alicia Dean , John A. Fitzsimmons , Janos Havas , Barry C. McCormick , Prabodh R. Shah
IPC分类号： G03F7/42 , H01L21/027 , H01L21/30
CPC分类号： G03F7/425
摘要： Photo resist stripper compositions comprising N-alkyl-2-pyrrolidone, 1,2-propanediol and tetraalkylammonium hydroxide. The photoresist strippers are useful at high stripping temperatures (105.degree. C.-125.degree. C.) to remove hard baked photoresist without damaging semiconductor substrates or metallurgy.
摘要翻译：包含N-烷基-2-吡咯烷酮，1,2-丙二醇和氢氧化四烷基铵的抗蚀剂剥离剂组合物。光致抗蚀剂剥离剂在高剥离温度（105℃-125℃）下是有用的，以去除硬烘烤的光致抗蚀剂而不损坏半导体衬底或冶金。

5. 发明授权

US5410940A Apparatus and method for identifying musical chords 失效
标题翻译：用于识别音乐和弦的装置和方法
公开(公告)号：US5410940A
公开(公告)日：1995-05-02
申请号：US961693
申请日：1993-03-01
申请人： Janos Havas
发明人： Janos Havas
IPC分类号： G10G1/02 , G09B15/02
CPC分类号： G10G1/02
摘要： A music chord indicating calculator assists in determining finger placement to play musical chords on a multi-stringed musical instrument containing a finger board. The device has an outer slide member and an inner base member which slides through the outer slide member. The slide member contains a number of columns of spaced viewing ports on both side faces. The inner base member has a number of columns of spaced indicia which are coded to correspond to various chords. A chord selector has one of the indicia on a column of indicia on the base member and can be viewed through a viewing port which has a chord identifying name associated with it. By sliding the base member and slide member relative to each other such that chord selector is viewed through a viewing port which identifies a chord by name, the finger placement of that chord can be viewed through the viewing ports by coding of the indicia on the base member.
摘要翻译： PCT No.PCT / AU91 / 00324 Sec。 371日期1993年3月1日 102（e）1993年3月1日PCT PCT 1991年7月23日PCT公布。出版物WO91 / 02011 日期1992年2月6日。音乐和弦指示计算器协助确定手指放置以在包含指板的多弦乐器上播放音乐和弦。该装置具有外滑动构件和滑动穿过外滑动构件的内基构件。滑动构件在两个侧面上包含多个间隔的观察口列。内部基座构件具有多个间隔标记的列，其被编码为对应于各种和弦。和弦选择器具有在基座上的标记列上的标记之一，并且可以通过具有与其相关联的和弦识别名称的观看端口来观看。通过使基部构件和滑动构件相对于彼此滑动，使得通过名称识别和弦的观察端口来观察和弦选择器，可以通过观察端口通过编码基座上的标记来观察该和弦的手指放置会员。

6. 发明授权

US4004044A Method for forming patterned films utilizing a transparent lift-off mask 失效
标题翻译：利用透明剥离掩模形成图案化膜的方法
公开(公告)号：US4004044A
公开(公告)日：1977-01-18
申请号：US576054
申请日：1975-05-09
申请人： Jack R. Franco , Janos Havas , Lewis J. Rompala
发明人： Jack R. Franco , Janos Havas , Lewis J. Rompala
IPC分类号： H01L21/302 , C23C14/04 , C23F4/00 , G03F7/09 , G03F7/095 , H01L21/027 , H01L21/28 , H01L21/3065 , H01L21/311 , H01L21/312 , H01L21/3205 , H05K3/02 , H05K3/04 , B05D5/12 , B05D1/32
CPC分类号： G03F7/095 , G03F7/094 , H01L21/0272 , H01L21/31138 , H01L21/312 , H01L21/32051 , H05K3/048 , Y10S148/106 , Y10S148/118 , Y10S438/951
摘要： A lift-off method for use in depositing thin films in the fabrication of integrated circuits which avoids edge tearing of the films. The method involves depositing an organic polymeric first masking material on a substrate, and forming on said material a layer of a polydimethylsiloxane resin material. The material, in turn, is covered by a second masking layer, preferably an organic polymeric resist material into which openings are placed in a selected pattern utilizing lithographic techniques. Then, conforming openings are placed in the underlying polydimethylsiloxane resin material and the openings are extended through the underlying resist material by successive reactive sputter etching steps to expose the substrate surface in the aforesaid selected pattern. The thin film to be deposited is then applied over the resulting structure; it is, thereby, deposited on the substrate in said openings. The final reactive sputter etching step affords edges in the openings through the resin material layer which overhang the edges in the openings through the first masking layer affording easy lift-off of the unwanted areas of the deposited film when the first masking layer is totally removed by application of solvent.
摘要翻译：一种用于在制造集成电路中沉积薄膜的剥离方法，其避免了膜的边缘撕裂。该方法包括在基底上沉积有机聚合物第一掩蔽材料，并在所述材料上形成一层聚二甲基硅氧烷树脂材料。该材料又被第二掩蔽层覆盖，优选地是有机聚合抗蚀剂材料，利用光刻技术以选定的图案将孔放置在其中。然后，将合适的开口放置在下面的聚二甲基硅氧烷树脂材料中，并且通过连续的反应性溅射蚀刻步骤将开口延伸通过下面的抗蚀剂材料，以以上述选择的图案露出衬底表面。然后将沉积的薄膜施加到所得结构上; 从而沉积在所述开口中的基板上。最终的反应性溅射蚀刻步骤通过树脂材料层在开口中提供边缘，该树脂材料层通过第一掩模层突出在开口中的边缘，当第一掩蔽层被完全去除时，沉积膜的不需要的区域容易剥离溶剂的应用。

7. 发明授权

US4202914A Method of depositing thin films of small dimensions utilizing silicon nitride lift-off mask 失效
标题翻译：使用氮化硅剥离掩模沉积小尺寸薄膜的方法
公开(公告)号：US4202914A
公开(公告)日：1980-05-13
申请号：US974461
申请日：1978-12-29
申请人： Janos Havas , Gabor Paal
发明人： Janos Havas , Gabor Paal
IPC分类号： H01L21/3205 , H01L21/027 , H01L21/28 , H01L21/306 , B05D3/06
CPC分类号： H01L21/0272
摘要： A method for depositing thin film patterns of very small and controllable dimensions in the fabrication of integrated circuits which avoids edge tearing of the films. A non-photosensitive organic polymeric first masking layer is deposited on the integrated circuit substrate. Upon this layer is deposited a layer of silicon nitride using plasma deposition techniques employing a gaseous source. The silicon nitride layer is covered by a second masking layer, preferably an organic polymeric resist material, through which apertures are formed in preselected patterns using standard lithographic masking and etching techniques. The silicon nitride layer is then reactive ion etched with CF.sub.4 through the apertures formed in the second masking layer. The first masking layer is then etched through the apertures in the second masking layer and silicon nitride layer using reactive ion etching techniques. The etching of the first masking layer continues until the first masking layer is undercut beyond the edges of the aperture in the silicon nitride layer so that the silicon nitride layer forms an overhang of the aperture in the first masking layer. The thin film to be deposited is then applied over the resulting structure including the surface of the silicon nitride layer and the substrate exposed through the apertures. Because of the overhang, a discontinuity is formed between the thin film deposited upon the exposed surface of the substrate and that formed upon the outer surface of the silicon nitride layer so that when the first masking layer is dissolved, the film deposited upon the substrate is left without any edge tearing between it and the removed portions of the film.
摘要翻译：一种在集成电路的制造中沉积非常小且可控尺寸的薄膜图案的方法，其避免了膜的边缘撕裂。非感光性有机聚合物第一掩模层沉积在集成电路基板上。在该层使用采用气态源的等离子体沉积技术沉积氮化硅层。氮化硅层被第二掩蔽层覆盖，优选为有机聚合物抗蚀剂材料，通过标准光刻掩模和蚀刻技术，孔以预选图案形成。氮化硅层然后通过形成在第二掩模层中的孔与CF4反应离子蚀刻。然后通过使用反应离子蚀刻技术的第二掩模层和氮化硅层中的孔蚀刻第一掩模层。第一掩模层的蚀刻继续进行，直到第一掩模层被蚀刻超过氮化硅层中的孔的边缘，使得氮化硅层形成第一掩模层中的孔的突出端。然后将待沉积的薄膜施加到包括氮化硅层的表面和通过孔露出的衬底的所得结构上。由于悬垂，在沉积在衬底的暴露表面上的薄膜和形成在氮化硅层的外表面上的薄膜之间形成不连续性，使得当第一掩模层溶解时，沉积在衬底上的膜是左边没有任何边缘撕裂在它和膜的去除部分之间。

8. 发明授权

US5240878A Method for forming patterned films on a substrate 失效
标题翻译：在基板上形成图案化膜的方法
公开(公告)号：US5240878A
公开(公告)日：1993-08-31
申请号：US691951
申请日：1991-04-26
申请人： John A. Fitzsimmons , Janos Havas , Margaret J. Lawson , Edward J. Leonard , Bryan N. Rhoads
发明人： John A. Fitzsimmons , Janos Havas , Margaret J. Lawson , Edward J. Leonard , Bryan N. Rhoads
IPC分类号： G03F7/11 , G03F7/09 , G03F7/26 , H01L21/027 , H01L21/30 , H01L21/312
CPC分类号： G03F7/094 , H01L21/0272 , Y10S148/10 , Y10S438/95 , Y10S438/951
摘要： A method of forming patterned films on a semiconductor substrate 10 includes the steps of depositing a hardened photo resist underlay 30 onto the substrate, then depositing a polyether sulfone release layer 32, then depositing a photo sensitive resist layer 34 and exposing an etching a metallization pattern 36, 38 to the substrate 10. The structure is then blanket deposited with a conductive layer 40 to thereby create a conductive contact stud 42. The film layer 40 and resist layer 34 are removed by dissolving the polyether sulfone layer 32 in an NMP solution and the photo resist underlayer 30 is then removed using a selective photo resist stripper composition.
摘要翻译：在半导体衬底10上形成图案化膜的方法包括以下步骤：将硬化的光致抗蚀剂衬底30沉积到衬底上，然后沉积聚醚砜释放层32，然后沉积光敏抗蚀剂层34并暴露蚀刻金属化图案然后将该结构用导电层40进行覆盖沉积，从而形成导电接触柱42.通过将聚醚砜层32溶解在NMP溶液中来除去膜层40和抗蚀层34，然后使用选择性抗蚀剂剥离剂组合物除去光致抗蚀剂底层30。

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