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    • 2. 发明授权
    • Process for carrying out crystallization
    • 进行结晶的方法
    • US07883551B2
    • 2011-02-08
    • US11661057
    • 2005-09-02
    • Dirk VerdoesEarl Lawrence Vincent GoetheerZhuo Hornstra-XuJan Izaak Walpot
    • Dirk VerdoesEarl Lawrence Vincent GoetheerZhuo Hornstra-XuJan Izaak Walpot
    • C13K1/10
    • B01D9/0013B01D9/0036B01D9/005B01D9/0054
    • The present invention is directed to a crystallization process and apparatuses for such processes. In a first aspect, the process of the invention comprises a step wherein a liquid comprising a solvent and material dissolved therein, is subjected to crystallization conditions in the presence of Dean vortices, which Dean vortices result from said liquid flowing through a channel having at least one curvature. In a second aspect, the invention is directed to a crystallization process, which comprises a step wherein a liquid comprising a solvent, material dissolved therein and heterogeneous particles is subjected to crystallization conditions in the presence of Dean vortices, which Dean vortices result from said liquid flowing through a channel having at least one curvature, wherein said material crystallizes on solid surfaces, in particular on surfaces of the heterogeneous particles present in the feed.
    • 本发明涉及一种结晶方法和这种方法的装置。 在第一方面,本发明的方法包括一个步骤,其中包含溶剂和溶解在其中的材料的液体在Dean涡流的存在下进行结晶条件,Dean涡流由所述液体流过具有至少 一个曲率。 在第二方面,本发明涉及一种结晶方法,其包括以下步骤:其中包含溶剂,溶解在其中的材料的液体和异质颗粒在Dean涡流存在下进行结晶条件,Dean旋涡由所述液体 流过具有至少一个曲率的通道,其中所述材料在固体表面上,特别是在进料中存在的异质颗粒的表面上结晶。
    • 3. 发明申请
    • Process and Apparatus For Carrying Out Crystallization
    • 进行结晶的工艺和装置
    • US20080134471A1
    • 2008-06-12
    • US11661057
    • 2005-09-02
    • Dirk VerdoesEarl Lawrence Vincent GoetheerZhuo Hornstra-XuJan Izaak Walpot
    • Dirk VerdoesEarl Lawrence Vincent GoetheerZhuo Hornstra-XuJan Izaak Walpot
    • B01D9/02
    • B01D9/0013B01D9/0036B01D9/005B01D9/0054
    • The present invention is directed to a crystallization process and apparatuses for such processes. In a first aspect, the process of the invention comprises a step wherein a liquid comprising a solvent and material dissolved therein, is subjected to crystallization conditions in the presence of Dean vortices, which Dean vortices result from said liquid flowing through a channel having at least one curvature. In a second aspect, the invention is directed to a crystallization process, which comprises a step wherein a liquid comprising a solvent, material dissolved therein and heterogeneous particles is subjected to crystallization conditions in the presence of Dean vortices, which Dean vortices result from said liquid flowing through a channel having at least one curvature, wherein said material crystallizes on solid surfaces, in particular on surfaces of the heterogeneous particles present in the feed.
    • 本发明涉及一种结晶方法和这种方法的装置。 在第一方面,本发明的方法包括一个步骤,其中包含溶剂和溶解在其中的材料的液体在Dean涡流的存在下进行结晶条件,Dean涡流由所述液体流过具有至少 一个曲率。 在第二方面,本发明涉及一种结晶方法,其包括以下步骤:其中包含溶剂,溶解在其中的材料的液体和异质颗粒在Dean涡流存在下进行结晶条件,Dean旋涡由所述液体 流过具有至少一个曲率的通道,其中所述材料在固体表面上,特别是在进料中存在的异质颗粒的表面上结晶。