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1. 发明授权

US07599593B2 Ge-Si quantum well structures 有权
标题翻译： Ge-Si量子阱结构
公开(公告)号：US07599593B2
公开(公告)日：2009-10-06
申请号：US11230285
申请日：2005-09-19
申请人： James S. Harris, Jr. , David A. B. Miller , Yu-Hsuan Kuo
发明人： James S. Harris, Jr. , David A. B. Miller , Yu-Hsuan Kuo
IPC分类号： G02B6/10 , H01L31/00
CPC分类号： G02F1/017 , B82Y20/00 , G02F1/01708 , G02F2001/01766 , G02F2201/124 , G02F2203/02 , G02F2203/023 , G02F2203/026 , H01L21/02381 , H01L21/0245 , H01L21/0251 , H01L21/02532 , H01L21/0262 , H01L29/155 , H01L29/165 , H01L31/035254 , H01L31/1037 , H01L31/105
摘要： Si—Ge quantum wells where the well material has a lowest conduction band energy minimum at k=0 (the Γ point of the first Brillouin zone) are provided. Quantum well structures that satisfy this condition have “Kane-like” bands at and near k=0 which can provide physical effects useful for various device applications, especially optical modulators. In the Si1−xGex material system, this condition on the band structure is satisfied for x greater than about 0.7. The quantum well barrier composition may or may not have Kane-like bands. A preferred method of providing such quantum well structures on a substrate (e.g., a silicon substrate) is to grow a first Ge-rich Si—Ge buffer layer on the substrate, and then anneal the resulting layered structure. In many cases it is further preferred to grow a second Ge-rich Si—Ge buffer layer on top of the first buffer layer and anneal the resulting layered structure.
摘要翻译： Si-Ge量子阱，其中阱材料在k = 0（第一布里渊区域的伽马点）具有最低导带能量最小值。满足该条件的量子阱结构在k = 0附近具有“Kane样”带，其可以提供对各种器件应用尤其是光学调制器有用的物理效应。在Si1-xGex材料体系中，对于大于约0.7的x，满足条带结构条件。量子阱屏障组合物可以具有或不具有凯恩样条带。在衬底（例如，硅衬底）上提供这种量子阱结构的优选方法是在衬底上生长第一富锗的Si-Ge缓冲层，然后使所得的层状结构退火。在许多情况下，进一步优选的是在第一缓冲层的顶部生长第二富锗的Si-Ge缓冲层并退火所得到的层状结构。

2. 发明授权

US07457487B2 Surface parallel modulator 失效
标题翻译：表面并行调制器
公开(公告)号：US07457487B2
公开(公告)日：2008-11-25
申请号：US11524530
申请日：2006-09-19
申请人： David A. B. Miller , Yu-Hsuan Kuo , James S. Harris, Jr.
发明人： David A. B. Miller , Yu-Hsuan Kuo , James S. Harris, Jr.
IPC分类号： G02F1/035 , G02B6/26
CPC分类号： G02F1/017 , B82Y20/00 , G02F1/01708 , G02F2001/01766 , G02F2201/124 , G02F2203/02 , G02F2203/023 , G02F2203/026 , H01L21/02381 , H01L21/0245 , H01L21/02507 , H01L21/02532 , H01L21/0262 , H01L29/155 , H01L29/165 , H01L31/035254 , H01L31/1037 , H01L31/105
摘要： SiGe quantum wells where the well material has a lowest conduction band energy minimum at k=0 (the Γ point of the first Brillouin zone) are provided. Quantum well structures that satisfy this condition have “Kane-like” bands at and near k=0 which can provide physical effects useful for various device applications, especially optical modulators. In the Si1-xGex material system, this condition on the band structure is satisfied for x greater than about 0.7. The quantum well barrier composition may or may not have Kane-like bands. Embodiments of the invention having a surface parallel configuration are especially suitable for use in fiber coupled devices. Such surface parallel devices have light propagating in the plane of the quantum wells, in a device geometry that is preferably not single-mode waveguided.
摘要翻译： SiGe量子阱，其中阱材料在k = 0处具有最低导带能量最小值（第一布里渊区域的伽马点）。满足该条件的量子阱结构在k = 0附近具有“Kane样”带，其可以提供对各种器件应用尤其是光学调制器有用的物理效应。在Si 1-x N Ge x S x材料体系中，对于大于约0.7的x，满足条带结构的这个条件。量子阱屏障组合物可以具有或不具有凯恩样条带。具有表面平行配置的本发明的实施例特别适用于光纤耦合器件。这种表面平行装置在优选不是单模波导的装置几何形状中具有在量子阱的平面中传播的光。

3. 发明授权

US07515777B2 Silicon-based Ge/SiGe optical interconnects 失效
标题翻译：基于硅的Ge / SiGe光学互连
公开(公告)号：US07515777B2
公开(公告)日：2009-04-07
申请号：US11524505
申请日：2006-09-19
申请人： Yu-Hsuan Kuo , James S. Harris, Jr. , David A. B. Miller
发明人： Yu-Hsuan Kuo , James S. Harris, Jr. , David A. B. Miller
IPC分类号： G02F1/035 , G02F1/295 , G02F1/017 , G02B6/12
CPC分类号： G02F1/017 , B82Y20/00 , G02B6/12004 , G02B2006/12142 , G02F1/01708 , G02F2001/01766 , G02F2201/124 , G02F2203/02 , G02F2203/023 , G02F2203/026 , H01L21/02381 , H01L21/0245 , H01L21/02507 , H01L21/02532 , H01L21/0262 , H01L29/155 , H01L29/165 , H01L31/035236 , H01L31/035254 , H01L31/1037 , H01L31/105
摘要： SiGe quantum wells where the well material has a lowest conduction band energy minimum at k=0 (the Γ point of the first Brillouin zone) are provided. Quantum well structures that satisfy this condition have “Kane-like” bands at and near k=0 which can provide physical effects useful for various device applications, especially optical modulators. In the Si1-xGex material system, this condition on the band structure is satisfied for x greater than about 0.7. The quantum well barrier composition may or may not have Kane-like bands. Optical modulators and/or detectors according to the invention are suitable for inclusion in waveguide-based optical interconnects. Such interconnects can be on-chip interconnects or chip to chip interconnects.
摘要翻译： SiGe量子阱，其中阱材料在k = 0处具有最低导带能量最小值（第一布里渊区域的伽马点）。满足该条件的量子阱结构在k = 0附近具有“Kane样”带，其可以提供对各种器件应用，特别是光学调制器有用的物理效应。在Si1-xGex材料体系中，对于大于约0.7的x，满足条带结构条件。量子阱屏障组合物可以具有或不具有凯恩样条带。根据本发明的光调制器和/或检测器适用于纳入基于波导的光学互连。这种互连可以是片上互连或芯片到芯片互连。

4. 发明授权

US07515776B1 Temperature-controlled optical modulator 失效
标题翻译：温度控制光调制器
公开(公告)号：US07515776B1
公开(公告)日：2009-04-07
申请号：US11524035
申请日：2006-09-19
申请人： David A. B. Miller , James S. Harris, Jr. , Yu-Hsuan Kuo
发明人： David A. B. Miller , James S. Harris, Jr. , Yu-Hsuan Kuo
IPC分类号： G02F1/035 , G02F1/017 , G02B6/10 , H01L29/06
CPC分类号： G02F1/017 , B82Y20/00 , G02F1/0147 , G02F1/01708 , G02F2001/01766 , G02F2201/124 , G02F2203/02 , G02F2203/023 , G02F2203/026 , H01L21/02381 , H01L21/0245 , H01L21/02502 , H01L21/02532 , H01L21/0262 , H01L29/155 , H01L29/165 , H01L31/035254 , H01L31/1037 , H01L31/105
摘要： SiGe quantum wells where the well material has a lowest conduction band energy minimum at k=0 (the Γ point of the first Brillouin zone) are provided. Quantum well structures that satisfy this condition have “Kane-like” bands at and near k=0 which can provide physical effects useful for various device applications, especially optical modulators. In the Si1-xGex material system, this condition on the band structure is satisfied for x greater than about 0.7. The quantum well barrier composition may or may not have Kane-like bands. Optical modulators including such SiGe quantum wells can be operated at temperatures other than room temperature. Such temperature control is preferred for providing optical modulators that operate in the telecommunication C band (˜1530 nm to ˜1565 nm).
摘要翻译： SiGe量子阱，其中阱材料在k = 0处具有最低导带能量最小值（第一布里渊区域的伽马点）。满足该条件的量子阱结构在k = 0附近具有“Kane样”带，其可以提供对各种器件应用，特别是光学调制器有用的物理效应。在Si1-xGex材料体系中，对于大于约0.7的x，满足条带结构条件。量子阱屏障组合物可以具有或不具有凯恩样条带。包括这种SiGe量子阱的光学调制器可以在室温以外的温度下操作。这样的温度控制优选用于提供在通信C带（〜1530nm至〜〜〜〜6565nm）内工作的光调制器。

5. 发明授权

US07418166B1 Device and approach for integration of optical devices and waveguides therefor 失效
标题翻译：用于集成光学器件和波导的器件和方法
公开(公告)号：US07418166B1
公开(公告)日：2008-08-26
申请号：US11710624
申请日：2007-02-23
申请人： Pawan Kapur , Yu-Hsuan Kuo , Michael West Wiemer , David A. B. Miller
发明人： Pawan Kapur , Yu-Hsuan Kuo , Michael West Wiemer , David A. B. Miller
IPC分类号： G02B6/12 , G02B6/10
CPC分类号： G02B6/12004 , G02B6/12007
摘要： Optical devices having integrated waveguide and active areas are realized using a crystallization approach involving the inhibition of defects typically associated with liquid-phase crystalline growth of lattice mismatched materials. According to one example embodiment, a growth region is formed such that the region is isolated from a silicon portion of silicon material. The region extends from a silicon-based seeding area of the substrate. A semiconductor material is deposited on a Silicon-based seeding area and in the growth region. A single crystalline material is formed from the deposited semiconductor material by heating and cooling the deposited semiconductor material while directing growth of the semiconductor material from the Silicon-based seeding area and through an opening sufficiently narrow to mitigate crystalline defects. A light-communicating device is formed by etching the silicon material over an insulator layer and etching the single crystalline material.
摘要翻译：具有集成波导和有源区域的光学器件使用结晶方法实现，该方法涉及抑制通常与晶格失配材料的液相晶体生长相关的缺陷。根据一个示例性实施例，形成生长区域使得该区域与硅材料的硅部分隔离。该区域从基底的硅基接种区延伸。半导体材料沉积在硅基种植区域和生长区域中。通过加热和冷却沉积的半导体材料，同时引导半导体材料从硅基接种区域的生长并通过足够窄的开口以减轻晶体缺陷，由沉积的半导体材料形成单晶材料。通过在绝缘体层上蚀刻硅材料并蚀刻单晶材料形成光通信装置。

6. 发明授权

US06618150B2 Compact transform spectrometer based on sampling a standing wave 失效
公开(公告)号：US06618150B2
公开(公告)日：2003-09-09
申请号：US09932457
申请日：2001-08-16
申请人： James S. Harris, Jr. , Helen L. Kung , David A. B. Miller
发明人： James S. Harris, Jr. , Helen L. Kung , David A. B. Miller
IPC分类号： G01B902
CPC分类号： G01J3/4532 , G01J3/45
摘要： A spectrometer for determining a spectrum of a light by using a mirror to reflect the light so that the light forms an intensity standing wave pattern through superposition of an incident portion of the light and a reflected portion of the light. The spectrometer is equipped with an intensity detector whose thickness is less than a shortest wavelength of the light being examined and which is semitransparent over the spectrum. The spectrometer has a mechanism to provide relative movement between the mirror and the intensity detector such that the intensity detector registers a variation of the intensity standing wave pattern. An analyzer, such as a Fourier transform analyzer, is employed to determine the spectrum of the light from that variation of the intensity standing wave pattern.

7. 发明授权

US06653706B1 Low temperature grown optical detector 失效
标题翻译：低温生长光检测器
公开(公告)号：US06653706B1
公开(公告)日：2003-11-25
申请号：US09567179
申请日：2000-05-08
申请人： David A. B. Miller , James S. Harris, Jr.
发明人： David A. B. Miller , James S. Harris, Jr.
IPC分类号： H01C3100
CPC分类号： H01L31/1852 , H01L31/09 , H01L31/1085 , Y02E10/544
摘要： A high efficiency optical interconnect (OI) deposited directly on a silicon based IC by a low temperature process that utilizes a heterogeneous crystalline structure of a III-V compound material to convert light pulses into electrical signals. The high efficiency is established by pulsing the light beams with a shorter duration than the life time of the generated carriers and by reducing the structural volume and consequently the internal capacitance of the III-V compound to a functional height of approximately 1 micron. The analog MSM characteristic of the OI is bypassed by differential two-beam signal processing, wherein the intensity difference of two synchronous light beams is transformed in two parallel OI's into two electrical signals that compensate in a central node. The resulting polarity in the node switches either a PMOS or a NMOS transistor, which connect either a positive or negative voltage to the output node.
摘要翻译：通过利用III-V复合材料的异质晶体结构的低温工艺将直接沉积在硅基IC上的高效光学互连（OI）将光脉冲转换成电信号。通过以比产生的载流子的寿命短的持续时间脉冲光束和通过将III-V族化合物的内部电容降低到大约1微米的功能高度来建立高效率。 OI的模拟MSM特性被差分双波束信号处理旁路，其中两个同步光束的强度差在两个并行OI中变换成两个电信号，在中心节点进行补偿。在节点中产生的极性切换PMOS或NMOS晶体管，其将正电压或负电压连接到输出节点。

8. 发明授权

US07088884B2 Apparatus and method employing multilayer thin-film stacks for spatially shifting light 有权
标题翻译：使用多层薄膜堆叠空间移动光的装置和方法
公开(公告)号：US07088884B2
公开(公告)日：2006-08-08
申请号：US10227138
申请日：2002-08-22
申请人： Martina Gerken , David A. B. Miller
发明人： Martina Gerken , David A. B. Miller
IPC分类号： G02B6/28
CPC分类号： G02B27/148 , G02B6/29362 , G02B6/29365 , G02B27/1006 , G02B27/142
摘要： An apparatus and method for spatially shifting a light using a multilayer thin-film stack of at least two materials having unequal optical properties, such as indices of refraction and absorption coefficients. The apparatus has an input face for admitting the light into the apparatus and an impedance matching mechanism for maximizing the in-coupling of the light into the multilayer thin-film stack at a non-normal incidence. The non-normal incidence is sufficient to generate a spatial shift of the light in the multilayer thin-film stack as a function of at least one light parameter, such as wavelength and/or polarization of the light, thereby separating the light into light components. The spatial shift is achieved by any one or any combination of effects including superprism, turning point and energy confinement. These effects are achieved in the multilayer thin-film stack by appropriately engineering its layer sequence.
摘要翻译：使用具有不等光学性质的至少两种材料的多层薄膜叠层（例如折射率和吸收系数）来空间移动光的装置和方法。该装置具有用于将光引入装置的输入面和阻抗匹配机构，用于在非正常入射下最大化将光与多层薄膜叠层的耦合。非正常入射足以根据至少一种光参数（例如光的波长和/或偏振）产生多层薄膜叠层中的光的空间位移，从而将光分离成光分量。空间位移通过任何一种或任何组合的效果来实现，包括超能力，转折点和能量限制。通过适当地设计其层序来在多层薄膜堆叠中实现这些效果。

9. 发明授权

US5036512A Optical apparatus for combining light beam arrays having different wavelengths 失效
标题翻译：用于组合具有不同波长的光束阵列的光学装置
公开(公告)号：US5036512A
公开(公告)日：1991-07-30
申请号：US349275
申请日：1989-05-08
申请人： Thomas J. Cloonan , Jack L. Jewell , Frederick B. McCormick, Jr. , David A. B. Miller , Michael E. Prise
发明人： Thomas J. Cloonan , Jack L. Jewell , Frederick B. McCormick, Jr. , David A. B. Miller , Michael E. Prise
IPC分类号： G02B27/28 , H04B10/02 , H04Q3/52
CPC分类号： G02B27/283
摘要： Optical apparatus for performing wavelength-dependent beam combination. The apparatus relies on a polarization beam splitter in combination with other optical elements to develop combined beams with the same polarization type and that are therefore suitable for polarization-dependent combination with other beam arrays. A dichroic mirror, which is used as the wavelength-dependent element of the apparatus, is oriented such that the incident beams are substantially perpendicular to the mirror. With this orientation, the dichroic mirror achieves near-ideal performance even with beam arrays having a substantial angular field. The apparatus also uses two plates which, although designed for operation as quarter-wave plates at one of the two wavelights being combined, are oriented with their respective fast axes substantially perpendicular to each other such that polarization conversions, effected by the plates on beams having the other of the two wavelengths, substantially cancel each other.

10. 发明授权

US4967068A Single-ended optical logic arrangement 失效
标题翻译：单端光逻辑布置
公开(公告)号：US4967068A
公开(公告)日：1990-10-30
申请号：US399638
申请日：1989-08-28
申请人： Anthony L. Lentine , David A. B. Miller
发明人： Anthony L. Lentine , David A. B. Miller
IPC分类号： H03K19/14 , G02F3/02
CPC分类号： G02F3/028
摘要： Apparatus having a plurality of photodetectors interconnected to form an electrical circuit corresponding to any given logic function comprising at least two of the four basic AND, OR, NAND, and NOR logic operations. The apparatus performs optical logic without optical cascading since the electrical circuit controls the generation of an optical output beam based on the value that the given logic function assumes in response to a plurality of optical signal beams each incident on at least one of the photodetectors. A complementary optical output is obtained and time-sequential operation is effected when two, serially connected quantum well p-i-n diodes comprising an S-SEED are used to generate optical output beams in response to the voltage developed by the electrical circuit of interconnected photodetectors.

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