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1. 发明授权

US07515776B1 Temperature-controlled optical modulator 失效
标题翻译：温度控制光调制器
公开(公告)号：US07515776B1
公开(公告)日：2009-04-07
申请号：US11524035
申请日：2006-09-19
申请人： David A. B. Miller , James S. Harris, Jr. , Yu-Hsuan Kuo
发明人： David A. B. Miller , James S. Harris, Jr. , Yu-Hsuan Kuo
IPC分类号： G02F1/035 , G02F1/017 , G02B6/10 , H01L29/06
CPC分类号： G02F1/017 , B82Y20/00 , G02F1/0147 , G02F1/01708 , G02F2001/01766 , G02F2201/124 , G02F2203/02 , G02F2203/023 , G02F2203/026 , H01L21/02381 , H01L21/0245 , H01L21/02502 , H01L21/02532 , H01L21/0262 , H01L29/155 , H01L29/165 , H01L31/035254 , H01L31/1037 , H01L31/105
摘要： SiGe quantum wells where the well material has a lowest conduction band energy minimum at k=0 (the Γ point of the first Brillouin zone) are provided. Quantum well structures that satisfy this condition have “Kane-like” bands at and near k=0 which can provide physical effects useful for various device applications, especially optical modulators. In the Si1-xGex material system, this condition on the band structure is satisfied for x greater than about 0.7. The quantum well barrier composition may or may not have Kane-like bands. Optical modulators including such SiGe quantum wells can be operated at temperatures other than room temperature. Such temperature control is preferred for providing optical modulators that operate in the telecommunication C band (˜1530 nm to ˜1565 nm).
摘要翻译： SiGe量子阱，其中阱材料在k = 0处具有最低导带能量最小值（第一布里渊区域的伽马点）。满足该条件的量子阱结构在k = 0附近具有“Kane样”带，其可以提供对各种器件应用，特别是光学调制器有用的物理效应。在Si1-xGex材料体系中，对于大于约0.7的x，满足条带结构条件。量子阱屏障组合物可以具有或不具有凯恩样条带。包括这种SiGe量子阱的光学调制器可以在室温以外的温度下操作。这样的温度控制优选用于提供在通信C带（〜1530nm至〜〜〜〜6565nm）内工作的光调制器。

2. 发明授权

US07515777B2 Silicon-based Ge/SiGe optical interconnects 失效
标题翻译：基于硅的Ge / SiGe光学互连
公开(公告)号：US07515777B2
公开(公告)日：2009-04-07
申请号：US11524505
申请日：2006-09-19
申请人： Yu-Hsuan Kuo , James S. Harris, Jr. , David A. B. Miller
发明人： Yu-Hsuan Kuo , James S. Harris, Jr. , David A. B. Miller
IPC分类号： G02F1/035 , G02F1/295 , G02F1/017 , G02B6/12
CPC分类号： G02F1/017 , B82Y20/00 , G02B6/12004 , G02B2006/12142 , G02F1/01708 , G02F2001/01766 , G02F2201/124 , G02F2203/02 , G02F2203/023 , G02F2203/026 , H01L21/02381 , H01L21/0245 , H01L21/02507 , H01L21/02532 , H01L21/0262 , H01L29/155 , H01L29/165 , H01L31/035236 , H01L31/035254 , H01L31/1037 , H01L31/105
摘要： SiGe quantum wells where the well material has a lowest conduction band energy minimum at k=0 (the Γ point of the first Brillouin zone) are provided. Quantum well structures that satisfy this condition have “Kane-like” bands at and near k=0 which can provide physical effects useful for various device applications, especially optical modulators. In the Si1-xGex material system, this condition on the band structure is satisfied for x greater than about 0.7. The quantum well barrier composition may or may not have Kane-like bands. Optical modulators and/or detectors according to the invention are suitable for inclusion in waveguide-based optical interconnects. Such interconnects can be on-chip interconnects or chip to chip interconnects.
摘要翻译： SiGe量子阱，其中阱材料在k = 0处具有最低导带能量最小值（第一布里渊区域的伽马点）。满足该条件的量子阱结构在k = 0附近具有“Kane样”带，其可以提供对各种器件应用，特别是光学调制器有用的物理效应。在Si1-xGex材料体系中，对于大于约0.7的x，满足条带结构条件。量子阱屏障组合物可以具有或不具有凯恩样条带。根据本发明的光调制器和/或检测器适用于纳入基于波导的光学互连。这种互连可以是片上互连或芯片到芯片互连。

3. 发明授权

US07599593B2 Ge-Si quantum well structures 有权
标题翻译： Ge-Si量子阱结构
公开(公告)号：US07599593B2
公开(公告)日：2009-10-06
申请号：US11230285
申请日：2005-09-19
申请人： James S. Harris, Jr. , David A. B. Miller , Yu-Hsuan Kuo
发明人： James S. Harris, Jr. , David A. B. Miller , Yu-Hsuan Kuo
IPC分类号： G02B6/10 , H01L31/00
CPC分类号： G02F1/017 , B82Y20/00 , G02F1/01708 , G02F2001/01766 , G02F2201/124 , G02F2203/02 , G02F2203/023 , G02F2203/026 , H01L21/02381 , H01L21/0245 , H01L21/0251 , H01L21/02532 , H01L21/0262 , H01L29/155 , H01L29/165 , H01L31/035254 , H01L31/1037 , H01L31/105
摘要： Si—Ge quantum wells where the well material has a lowest conduction band energy minimum at k=0 (the Γ point of the first Brillouin zone) are provided. Quantum well structures that satisfy this condition have “Kane-like” bands at and near k=0 which can provide physical effects useful for various device applications, especially optical modulators. In the Si1−xGex material system, this condition on the band structure is satisfied for x greater than about 0.7. The quantum well barrier composition may or may not have Kane-like bands. A preferred method of providing such quantum well structures on a substrate (e.g., a silicon substrate) is to grow a first Ge-rich Si—Ge buffer layer on the substrate, and then anneal the resulting layered structure. In many cases it is further preferred to grow a second Ge-rich Si—Ge buffer layer on top of the first buffer layer and anneal the resulting layered structure.
摘要翻译： Si-Ge量子阱，其中阱材料在k = 0（第一布里渊区域的伽马点）具有最低导带能量最小值。满足该条件的量子阱结构在k = 0附近具有“Kane样”带，其可以提供对各种器件应用尤其是光学调制器有用的物理效应。在Si1-xGex材料体系中，对于大于约0.7的x，满足条带结构条件。量子阱屏障组合物可以具有或不具有凯恩样条带。在衬底（例如，硅衬底）上提供这种量子阱结构的优选方法是在衬底上生长第一富锗的Si-Ge缓冲层，然后使所得的层状结构退火。在许多情况下，进一步优选的是在第一缓冲层的顶部生长第二富锗的Si-Ge缓冲层并退火所得到的层状结构。

4. 发明授权

US07457487B2 Surface parallel modulator 失效
标题翻译：表面并行调制器
公开(公告)号：US07457487B2
公开(公告)日：2008-11-25
申请号：US11524530
申请日：2006-09-19
申请人： David A. B. Miller , Yu-Hsuan Kuo , James S. Harris, Jr.
发明人： David A. B. Miller , Yu-Hsuan Kuo , James S. Harris, Jr.
IPC分类号： G02F1/035 , G02B6/26
CPC分类号： G02F1/017 , B82Y20/00 , G02F1/01708 , G02F2001/01766 , G02F2201/124 , G02F2203/02 , G02F2203/023 , G02F2203/026 , H01L21/02381 , H01L21/0245 , H01L21/02507 , H01L21/02532 , H01L21/0262 , H01L29/155 , H01L29/165 , H01L31/035254 , H01L31/1037 , H01L31/105
摘要： SiGe quantum wells where the well material has a lowest conduction band energy minimum at k=0 (the Γ point of the first Brillouin zone) are provided. Quantum well structures that satisfy this condition have “Kane-like” bands at and near k=0 which can provide physical effects useful for various device applications, especially optical modulators. In the Si1-xGex material system, this condition on the band structure is satisfied for x greater than about 0.7. The quantum well barrier composition may or may not have Kane-like bands. Embodiments of the invention having a surface parallel configuration are especially suitable for use in fiber coupled devices. Such surface parallel devices have light propagating in the plane of the quantum wells, in a device geometry that is preferably not single-mode waveguided.
摘要翻译： SiGe量子阱，其中阱材料在k = 0处具有最低导带能量最小值（第一布里渊区域的伽马点）。满足该条件的量子阱结构在k = 0附近具有“Kane样”带，其可以提供对各种器件应用尤其是光学调制器有用的物理效应。在Si 1-x N Ge x S x材料体系中，对于大于约0.7的x，满足条带结构的这个条件。量子阱屏障组合物可以具有或不具有凯恩样条带。具有表面平行配置的本发明的实施例特别适用于光纤耦合器件。这种表面平行装置在优选不是单模波导的装置几何形状中具有在量子阱的平面中传播的光。

5. 发明授权

US07902046B2 Thin buffer layers for SiGe growth on mismatched substrates 有权
标题翻译：用于SiGe在不匹配衬底上生长的薄缓冲层
公开(公告)号：US07902046B2
公开(公告)日：2011-03-08
申请号：US11524499
申请日：2006-09-19
申请人： Yu-Hsuan Kuo , James S. Harris, Jr.
发明人： Yu-Hsuan Kuo , James S. Harris, Jr.
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： C30B33/02 , C30B29/52 , H01L21/02381 , H01L21/0245 , H01L21/02502 , H01L21/02532
摘要： Growth of SiGe on a significantly lattice mismatched substrate (e.g., Si) is provided by depositing a SiGe buffer layer at a growth temperature, then annealing the resulting structure at a temperature higher than the growth temperature. Additional buffer layers can be included following the same steps. The SiGe buffer is significantly lattice mismatched with respect to the substrate, and is preferably substantially lattice matched with a SiGe device to be grown on top of the buffer. The resulting buffer structure is relatively thin and provides low defect density, and low surface roughness. Disadvantages of thick graded buffer layers, such as high cost, high surface roughness, mechanical fragility, and CTE mismatch, are thereby avoided.
摘要翻译：通过在生长温度下沉积SiGe缓冲层，然后在高于生长温度的温度下对所得到的结构进行退火来提供SiGe在显着晶格错配衬底（例如Si）上的生长。可以按照相同的步骤包括附加的缓冲层。 SiGe缓冲液相对于衬底显着地晶格失配，并且优选地与要在缓冲器顶部生长的SiGe器件基本上晶格匹配。得到的缓冲结构相对较薄，提供低缺陷密度和低表面粗糙度。从而避免了诸如高成本，高表面粗糙度，机械脆性和CTE不匹配等厚梯度缓冲层的缺点。

6. 发明授权

US06653706B1 Low temperature grown optical detector 失效
标题翻译：低温生长光检测器
公开(公告)号：US06653706B1
公开(公告)日：2003-11-25
申请号：US09567179
申请日：2000-05-08
申请人： David A. B. Miller , James S. Harris, Jr.
发明人： David A. B. Miller , James S. Harris, Jr.
IPC分类号： H01C3100
CPC分类号： H01L31/1852 , H01L31/09 , H01L31/1085 , Y02E10/544
摘要： A high efficiency optical interconnect (OI) deposited directly on a silicon based IC by a low temperature process that utilizes a heterogeneous crystalline structure of a III-V compound material to convert light pulses into electrical signals. The high efficiency is established by pulsing the light beams with a shorter duration than the life time of the generated carriers and by reducing the structural volume and consequently the internal capacitance of the III-V compound to a functional height of approximately 1 micron. The analog MSM characteristic of the OI is bypassed by differential two-beam signal processing, wherein the intensity difference of two synchronous light beams is transformed in two parallel OI's into two electrical signals that compensate in a central node. The resulting polarity in the node switches either a PMOS or a NMOS transistor, which connect either a positive or negative voltage to the output node.
摘要翻译：通过利用III-V复合材料的异质晶体结构的低温工艺将直接沉积在硅基IC上的高效光学互连（OI）将光脉冲转换成电信号。通过以比产生的载流子的寿命短的持续时间脉冲光束和通过将III-V族化合物的内部电容降低到大约1微米的功能高度来建立高效率。 OI的模拟MSM特性被差分双波束信号处理旁路，其中两个同步光束的强度差在两个并行OI中变换成两个电信号，在中心节点进行补偿。在节点中产生的极性切换PMOS或NMOS晶体管，其将正电压或负电压连接到输出节点。

7. 发明授权

US06618150B2 Compact transform spectrometer based on sampling a standing wave 失效
公开(公告)号：US06618150B2
公开(公告)日：2003-09-09
申请号：US09932457
申请日：2001-08-16
申请人： James S. Harris, Jr. , Helen L. Kung , David A. B. Miller
发明人： James S. Harris, Jr. , Helen L. Kung , David A. B. Miller
IPC分类号： G01B902
CPC分类号： G01J3/4532 , G01J3/45
摘要： A spectrometer for determining a spectrum of a light by using a mirror to reflect the light so that the light forms an intensity standing wave pattern through superposition of an incident portion of the light and a reflected portion of the light. The spectrometer is equipped with an intensity detector whose thickness is less than a shortest wavelength of the light being examined and which is semitransparent over the spectrum. The spectrometer has a mechanism to provide relative movement between the mirror and the intensity detector such that the intensity detector registers a variation of the intensity standing wave pattern. An analyzer, such as a Fourier transform analyzer, is employed to determine the spectrum of the light from that variation of the intensity standing wave pattern.

8. 发明授权

US4285000A Buried channel charge coupled device with semi-insulating substrate 失效
标题翻译：掩埋沟道电荷耦合器件与半绝缘衬底
公开(公告)号：US4285000A
公开(公告)日：1981-08-18
申请号：US19807
申请日：1979-03-12
申请人： Ira Deyhimy , Richard C. Eden , James S. Harris, Jr. , Lucia O. Bubulac
发明人： Ira Deyhimy , Richard C. Eden , James S. Harris, Jr. , Lucia O. Bubulac
IPC分类号： H01L29/765 , H01L29/78 , G11C19/28 , H01L29/06 , H01L29/56
CPC分类号： H01L29/765
摘要： A charge coupled device has a semi-insulating semiconductor for a substrate. Resistivity of the semiconductor is at least 10.sup.6 ohm cm. A semi-conductive layer is grown epitaxially or is implanted on the substrate to form a thin, active, charge transport layer. A row of parallel, closely spaced gates on the charge transport layer provides individual storage wells in the charge transport layer. In a preferred embodiment, ohmic contacts adjacent the first and last gates in the row of gates provide a means for injecting a signal into the charge transport layer and a means for detecting the signal. Preferably, the substrate is semi-insulating GaAs and the gates are Schottky barrier gates.
摘要翻译：电荷耦合器件具有用于衬底的半绝缘半导体。半导体的电阻率至少为106欧姆厘米。半导体层外延生长或植入到衬底上以形成薄的，有活性的电荷传输层。在电荷传输层上的一排平行的，紧密间隔的栅极提供电荷输送层中的各个存储阱。在优选实施例中，邻近栅极行中的第一和第二栅极的欧姆接触提供用于将信号注入电荷传输层的装置和用于检测信号的装置。优选地，衬底是半绝缘GaAs，栅极是肖特基势垒栅极。

9. 发明授权

US07391062B2 Semiconductor structures using a group III-nitride material system with reduced phase separation and method of fabrication 失效
标题翻译：使用具有降低的相分离的III族氮化物材料体系和制造方法的半导体结构
公开(公告)号：US07391062B2
公开(公告)日：2008-06-24
申请号：US11073872
申请日：2005-03-08
申请人： Toru Takayama , Takaaki Baba , James S. Harris, Jr.
发明人： Toru Takayama , Takaaki Baba , James S. Harris, Jr.
IPC分类号： H01L29/06
CPC分类号： H01L29/201 , B82Y20/00 , H01L31/1035 , H01L33/32 , H01S5/22 , H01S5/32 , H01S5/32341 , H01S5/34333 , H01S2304/00
摘要： Group III-nitride quaternary and pentenary material systems and methods are disclosed for use in semiconductor structures, including laser diodes, transistors, and photodetectors, which reduce or eliminate phase separation and provide increased emission efficiency. In an exemplary embodiment the semiconductor structure includes a first ternary, quaternary or pentenary material layer using BInGaAlN material system of a first conduction type formed substantially without phase separation, and a quaternary or pentenary material active layer using BInGaAlN material system substantially without phase separation, and a third ternary, quaternary or pentenary material layer using BInGaAlN material system of an opposite conduction type formed substantially without phase separation.
摘要翻译：公开了用于半导体结构（包括激光二极管，晶体管和光电检测器）的III族 - 氮化物四元和五元材料体系和方法，其减少或消除相分离并提供增加的发射效率。在一个示例性实施例中，半导体结构包括使用基本上不相分离形成的第一导电类型的BInGaAlN材料体系的第一三元，四元或五元素材料层，以及基本上不相分离的BInGaAlN材料体系的四元或五元素材料活性层，以及使用基本上不相分离形成的相反导电类型的BInGaAlN材料体系的第三三元，四价或五元素材料层。

10. 发明授权

US06628695B1 Monolithically integrated mode-locked vertical cavity surface emitting laser (VCSEL) 失效
标题翻译：单片集成锁模垂直腔面发射激光器（VCSEL）
公开(公告)号：US06628695B1
公开(公告)日：2003-09-30
申请号：US10175659
申请日：2002-06-19
申请人： Rafael I. Aldaz , Gordon A. Keeler , Vijit A. Sabnis , James S. Harris, Jr. , David A.B. Miller
发明人： Rafael I. Aldaz , Gordon A. Keeler , Vijit A. Sabnis , James S. Harris, Jr. , David A.B. Miller
IPC分类号： H01S308
CPC分类号： H01S5/18388 , H01S5/02 , H01S5/0207 , H01S5/0601 , H01S5/0657 , H01S5/18311 , H01S5/1833 , H01S5/18341 , H01S5/18358
摘要： A monolithically integrated, mode-locked vertical cavity surface emitting laser (VCSEL) for emitting ultrafast high power pulses. The resonator of the VCSEL has an active medium for emitting a radiation, a spacer for extending the resonator to a length L at which a significant number N of axial modes of the radiation are supported in the resonator and a saturable absorber for mode-locking. The VCSEL has an arrangement for stabilizing the resonator such that one transverse mode of the radiation is supported within the resonator. The VCSEL also has an arrangement for compensating dispersion of the radiation occurring in the resonator.
摘要翻译：用于发射超高功率脉冲的单片集成的锁模垂直腔表面发射激光器（VCSEL）。 VCSEL的谐振器具有用于发射辐射的有源介质，用于将谐振器延伸到长度L的间隔物，在该长度L处辐射的大量N个轴向模式被支撑在谐振器中，以及可饱和吸收器用于锁模。 VCSEL具有用于稳定谐振器的布置，使得辐射的一个横向模式被支撑在谐振器内。 VCSEL还具有用于补偿在谐振器中发生的辐射的色散的布置。

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