会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Clad metal substrate
    • 包层金属基材
    • US5653379A
    • 1997-08-05
    • US459440
    • 1995-06-02
    • James ForsterPremkumar HingoranyHenry F. Breit
    • James ForsterPremkumar HingoranyHenry F. Breit
    • B23K35/00C04B37/02H05K1/03H05K1/05H05K3/38B23K31/02B23K35/24
    • B23K35/007C04B37/021C04B2237/32C04B2237/365C04B2237/366C04B2237/402C04B2237/407H05K1/0306H05K1/053H05K3/38
    • Ceramic to metal stock or substrates having a relatively large and thick metal core and a relatively thin ceramic layer or layers are bonded to the metal core or a selected portion thereof by providing a metal core material having a temperature coefficient of expansion which is tailored to the temperature coefficient of expansion of the ceramic layer to be bonded thereto. The typical core materials include multilayer composite metal laminates embodying Cu/Mo/Cu, Cu/Kovar/Cu, Cu/Invar/Cu and the like and including powdered metal composites embodying Cu-W, Ag-Mo, Ag-W, Al-Si, Cu/Mo/Cu, Cu/Kovar/Cu, SiC-Cu, Ni-Fe alloys having from about 20% Ni to about 80% Ni, etc. The ceramic layer is chosen primarily for the properties of dielectric strength and isolation properties and typically include such ceramics as alumina, beryllium oxide, aluminum nitride, silicon carbide, etc. Where the core composite includes copper outer surface materials or is plated to have copper outer surface materials, the core and ceramic materials and particularly multiple sections of the ceramic materials are provided in spaced relation on the metal cores of relatively large area and are preferably bonded to the core using a copper oxide eutectic formed on the core surface.
    • 具有相对较大和较厚的金属芯和相对较薄的陶瓷层的陶瓷与金属原料或基底通过提供具有温度膨胀系数的金属芯材料结合到金属芯或其选定部分,该金属芯材料适合于 要结合的陶瓷层的温度膨胀系数。 典型的核心材料包括体现Cu / Mo / Cu,Cu / Kovar / Cu,Cu / Invar / Cu等的多层复合金属层压体,包括体现Cu-W,Ag-Mo,Ag-W,Al- Si,Cu / Mo / Cu,Cu / Kovar / Cu,具有约20%Ni至约80%Ni等的SiC-Cu,Ni-Fe合金等。陶瓷层主要用于介电强度和隔离性能 性质,并且通常包括诸如氧化铝,氧化铍,氮化铝,碳化硅等的陶瓷。其中芯复合材料包括铜外表面材料或被电镀以具有铜外表面材料,芯和陶瓷材料,特别是多个部分 在相对较大面积的金属芯上以间隔设置陶瓷材料,并且优选使用在芯表面上形成的铜氧化物共晶体将其结合到芯上。
    • 2. 发明授权
    • Heat dissipating member for mounting a semiconductor device and
electrical circuit unit incorporating the member
    • 用于安装半导体器件的散热构件和结合该构件的电路单元
    • US4811166A
    • 1989-03-07
    • US881427
    • 1986-07-02
    • Juan M. AlvarezHenry F. BreitSteven E. LevyPremkumar R. Hingorany
    • Juan M. AlvarezHenry F. BreitSteven E. LevyPremkumar R. Hingorany
    • H01L23/373H05K7/20
    • H01L23/3735H01L2224/48091H01L2224/48227H01L2224/73265H01L2924/13033
    • A heat dissipating pad or support member for mounting a semiconductor device in an electrical circuit has a metal core with a relatively low coefficient of thermal expansion preferably lower than that of the semiconductor device and has a thermally conducting, corrosion resistant metal coating with relatively greater thermal conductivity than the core. The thermally conducting coating is metallurgically bonded to top, bottom and two lateral surfaces of the core with a selected thickness to cooperate with the core in providing an outer surface portion of the member over the top of the core having an effective coefficient of thermal expansion substantially corresponding to the semiconductor device to reliably mount the semiconductor device thereon. The coating is thicker on at least one of the two lateral core surfaces so that heat collected from the semiconductor device at the top surface of the thermally conducting coating is efficiently transferrred via the lateral surface or surfaces on the core to the portion of the thermally conducting coating on the bottom surface of the member.
    • 用于将半导体器件安装在电路中的散热垫或支撑构件具有相对低于半导体器件的热膨胀系数相对较低的金属芯,并且具有导热耐蚀金属涂层,其具有相对较大的热 电导率比核心。 导热涂层以预定的厚度冶金地结合到芯的顶部,底部和两个侧表面,以与芯部配合,以在该芯部的顶部提供该部件的外表面部分,其基本上具有有效的热膨胀系数 对应于半导体器件以在其上可靠地安装半导体器件。 涂层在两个侧芯表面中的至少一个上较厚,使得在导热涂层的顶表面处从半导体器件收集的热量有效地通过芯上的侧表面或表面传递到导热部分 涂覆在构件的底面上。
    • 8. 发明授权
    • Circuit substrate and circuit using the substrate
    • 使用基板的电路基板和电路
    • US4994903A
    • 1991-02-19
    • US452183
    • 1989-12-18
    • Thomas WroeHenry F. Breit
    • Thomas WroeHenry F. Breit
    • H01L23/373H05K1/05
    • H01L23/3737H01L23/3733H01L23/3736H05K1/056H01L2224/32225H01L2224/48227H01L2224/73265H05K2201/0209
    • A circuit having a semiconductor device therein has a novel and improved circuit substrate comprising a layer of organic electrically insulating material having a layer of metal of relatively high electrical conductivity adhered to and supported on one side of the organic material layer forming electrically conductive circuit paths and forming a pad mounting the semiconductor device. A heat sink metal layer is adhered to and supported on an opposite side of the organic material layer for withdrawing heat from the semiconductor device. A multiplicity of particles of materials of relatively higher thermal conductivity than the organic layer material is dispersed in the organic material for enhancing heat withdrawal from the semiconductor device, and the heat-sink metal layer comprises a layer of a first metal of relatively low coefficient of thermal expansion having a plurality of apertures in therethrough and a second metal of relatively much higher thermal conductivity which is disposed in the apertures and on the opposite sides of the low expansion layer and which is metallurgically bonded to the low expansion layer material. The first and second metals in the heat-sink layer provide the heat-sink layer with heat-transferring properties and with an effective coefficient of thermal expansion which cooperates with the particles enhancing heat withdrawal from the semiconductor device for conducting withdrawn heat through the heat-sink layer to be rapidly dissipated while also providing improved reliability in the mounting and interconnection of the semiconductor device and the circuit during such enhanced heat withdrawal from the circuit.
    • 其中具有半导体器件的电路具有新颖且改进的电路基板,其包括有机电绝缘材料层,该有机电绝缘材料层具有粘附并支撑在形成导电电路路径的有机材料层的一侧上并具有相对较高导电性的金属层, 形成安装半导体器件的焊盘。 散热金属层粘附并支撑在有机材料层的相反侧,用于从半导体器件中抽取热量。 与有机层材料相比具有相对较高热导率的材料颗粒分散在有机材料中,用于增强从半导体器件取出的热量,并且散热金属层包括一层第一金属的相对较低系数 热膨胀在其中具有多个孔,以及设置在低膨胀层的孔和相对侧并且与冶金结合到低膨胀层材料上的相对高得多的导热性的第二金属。 散热层中的第一和第二金属为散热层提供具有传热性能和有效的热膨胀系数,其与颗粒配合,从而增强了从半导体器件的热量排出,以便通过热 - 吸收层被快速消散,同时在从电路的这种增强的热提取期间提供了半导体器件和电路的安装和互连的改进的可靠性。