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1. 发明授权

US06833027B2 Method of manufacturing high voltage schottky diamond diodes with low boron doping 失效
标题翻译：制造具有低硼掺杂的高电压肖特基金刚石二极管的方法
公开(公告)号：US06833027B2
公开(公告)日：2004-12-21
申请号：US10254809
申请日：2002-09-26
申请人： James E. Butler , Michael W. Geis , Donald D. Flechtner , Robert L. Wright
发明人： James E. Butler , Michael W. Geis , Donald D. Flechtner , Robert L. Wright
IPC分类号： C30B2904
CPC分类号： H01L21/0435 , C30B25/02 , C30B29/04 , H01L21/041 , H01L29/6603
摘要： A method of making a Schottky diode comprising the steps of: providing a single crystal diamond comprising a surface; placing the single crystal diamond in a CVD system; heating the diamond to a temperature of at least about 950° C.; providing a gas mixture capable of growing diamond film and comprising a sulfur compound through the CVD system; growing an epitaxial diamond film on the surface of the single crystal diamond; baking the diamond at a temperature of at least about 650° C. in air for a period of time that minimizes oxidation of the diamond; and fabricating a Schottky diode comprising the diamond film. A Schottky diode comprising an epitaxial diamond film and capable of blocking at least about 6 kV in a distance of no more than about 300 &mgr;m.
摘要翻译：一种制造肖特基二极管的方法，包括以下步骤：提供包含表面的单晶金刚石; 将单晶金刚石置于CVD系统中; 将金刚石加热至至少约950℃的温度; 提供能够生长金刚石膜并通过CVD系统包含硫化合物的气体混合物; 在单晶金刚石的表面生长外延金刚石膜; 在至少约650℃的温度下在空气中烘烤金刚石使其最小化金刚石氧化的时间; 以及制造包含金刚石膜的肖特基二极管。肖特基二极管包括外延金刚石膜，并且能够在不超过约300μm的距离内阻挡至少约6kV。

2. 发明申请

US20100025787A1 System and method for providing a high frequency response silicon photodetector 有权
标题翻译：提供高频响应硅光电探测器的系统和方法
公开(公告)号：US20100025787A1
公开(公告)日：2010-02-04
申请号：US11541975
申请日：2006-10-02
申请人： Michael W. Geis , Steven J. Spector , Donna M. Lennon , Matthew E. Grein , Robert T. Schulein , Jung U. Yoon , Franz Xaver Kaertner , Fuwan Gan , Theodore M. Lyszczarz
发明人： Michael W. Geis , Steven J. Spector , Donna M. Lennon , Matthew E. Grein , Robert T. Schulein , Jung U. Yoon , Franz Xaver Kaertner , Fuwan Gan , Theodore M. Lyszczarz
IPC分类号： H01L31/0352 , H01L21/30 , H01L31/0232
CPC分类号： H01L27/144 , H01L31/102
摘要： A Silicon photodetector contains an insulating substrate having a top surface and a bottom surface. A Silicon layer is located on the top surface of the insulating substrate, where the Silicon layer contains a center region, the center region being larger in thickness than the rest of the Silicon layer. A top Silicon dioxide layer is located on a top surface of the center region. A left wing of the center region and a right wing of the center region are doped. The Silicon photodetector also has an active region located within the center region, where the active region contains a tailored crystal defect-impurity combination and Oxygen atoms.
摘要翻译：硅光电检测器包含具有顶表面和底表面的绝缘基底。硅层位于绝缘基板的顶表面上，其中硅层包含中心区域，中心区域的厚度大于硅层的其余部分。顶部二氧化硅层位于中心区域的顶表面上。中心区域的左翼和中心区域的右翼被掺杂。硅光电探测器还具有位于中心区域内的有源区域，其中有源区域包含定制的晶体缺陷 - 杂质组合和氧原子。

3. 发明授权

US5582701A Ionic liquid-channel charge-coupled device 失效
公开(公告)号：US5582701A
公开(公告)日：1996-12-10
申请号：US360260
申请日：1994-12-20
申请人： Michael W. Geis , Stephanie A. Gajar , Nancy Geis
发明人： Michael W. Geis , Stephanie A. Gajar , Nancy Geis
IPC分类号： B03C5/02 , G01N27/447 , B01D57/02 , G01N27/26
CPC分类号： G01N27/44752 , B03C5/026 , B03C5/028 , Y10S257/912
摘要： An ionic liquid-channel charge-coupled device that separates ions in a liquid sample according to ion mobility characteristics includes a channel having an inner wall that has a matrix liquid disposed within. An insulating material surrounds the channel, and an introduction element introduces a liquid sample into the channel. The sample is preferably a liquid solution that has at least one ionic specie present in the solution. The device further includes a gating element that establishes at least one charge packet in the channel in response to an externally applied input signal, and a transport element that induces the charge packet to migrate through the channel. The gate element can be a plurality of spaced-apart, electrically conductive, gate structures that are alternately disposable between a high voltage state and a low voltage state. The transport element further includes an application element that applies a variable voltage to the gating element. This application of voltage induces the charge packets to form under the gate structures and, when the voltage applied to an adjacent gate has a higher potential, induces the packet to migrate through the channel in that direction.

4. 发明授权

US07443090B2 Surface-emission cathodes having cantilevered electrodes 失效
标题翻译：具有悬臂电极的表面发射阴极
公开(公告)号：US07443090B2
公开(公告)日：2008-10-28
申请号：US11237637
申请日：2005-09-28
申请人： Michael W. Geis , Theodore H. Fedynyshyn , Sandra J. Deneault , Keith E. Krohn , Theodore M. Lyszczarz , Michael F. Marchant
发明人： Michael W. Geis , Theodore H. Fedynyshyn , Sandra J. Deneault , Keith E. Krohn , Theodore M. Lyszczarz , Michael F. Marchant
IPC分类号： H01J1/00
CPC分类号： H01J1/304 , H01J1/32
摘要： A surface-emission cathode formed on an insulating surface having cantilevered, i.e. “undercut,” electrodes. Suitable insulating surfaces include negative electron affinity (NEA) insulators such as glass or diamond. The cathode can operate in a comprised vacuum (e.g., 10−7 Torr) with no bias on the electrodes and low vacuum electric fields (e.g., at least 10 V cm−1). Embodiments of the present invention are inexpensive to fabricate, requiring lithographic resolution of approximately 10 micrometers. These cathodes can be formed over large areas for use in lighting and displays and are suitable for satellite applications, such as cathodes for tethers, thrusters and space-charging neutralizers.
摘要翻译：形成在具有悬臂的绝缘表面上的表面发射阴极，即“底切”电极。合适的绝缘表面包括负电子亲和力（NEA）绝缘体，如玻璃或金刚石。阴极可以在电极和低真空电场（例如，至少10V cm -1 -1以上）没有偏压的情况下在包含的真空（例如，10 -7托）中操作 >）。本发明的实施例制造成本低廉，需要约10微米的光刻分辨率。这些阴极可以形成在用于照明和显示器的大面积上，并且适用于卫星应用，例如系绳阴极，推进器和空间充电中和剂。

5. 发明授权

US5900301A Structure and fabrication of electron-emitting devices utilizing electron-emissive particles which typically contain carbon 失效
标题翻译：使用通常含有碳的电子发射粒子的电子发射器件的结构和制造
公开(公告)号：US5900301A
公开(公告)日：1999-05-04
申请号：US779145
申请日：1997-01-03
申请人： George E. Brandes , Jonathan C. Twichell , Michael W. Geis , John M. Macaulay , Robert M. Duboc, Jr. , Christopher J. Curtin
发明人： George E. Brandes , Jonathan C. Twichell , Michael W. Geis , John M. Macaulay , Robert M. Duboc, Jr. , Christopher J. Curtin
IPC分类号： H01J1/304 , H01J9/02 , B05D5/12
CPC分类号： H01J1/3042 , H01J9/025 , H01J2201/30403 , H01J2201/30457 , H01J2201/319 , Y10T428/24124 , Y10T428/24198
摘要： Fabrication of an electron-emitting device entails distributing electron-emissive carbon-containing particles (22) over a non-insulating region (12). The particles can be made electron emissive after the particle distributing step. Particle bonding material (24) is typically provided to bond the particles to the non-insulating region. The particle bonding material can include carbide formed by heating or/and can be created by modifying a layer (32) provided between the non-insulating region and the particles. In one embodiment, the particles emit electrons primarily from graphite or/and amorphous carbon regions. In another embodiment, the particles are made electron-emissive prior to the particle distributing step.
摘要翻译：电子发射器件的制造需要在非绝缘区域（12）上分布电子发射含碳颗粒（22）。在颗粒分布步骤之后，颗粒可以被制成电子发射。通常提供颗粒粘合材料（24）以将颗粒结合到非绝缘区域。粒子接合材料可以包括通过加热形成的碳化物和/或可以通过改变设置在非绝缘区域和颗粒之间的层（32）而形成的碳化物。在一个实施方案中，颗粒主要从石墨或/和无定形碳区域发射电子。在另一个实施方案中，颗粒在颗粒分布步骤之前被制成电子发射的。

6. 发明授权

US5608283A Electron-emitting devices utilizing electron-emissive particles which typically contain carbon 失效
标题翻译：使用通常含有碳的电子发射粒子的电子发射器件
公开(公告)号：US5608283A
公开(公告)日：1997-03-04
申请号：US269283
申请日：1994-06-29
申请人： Jonathan C. Twichell , George R. Brandes , Michael W. Geis , John M. Macaulay , Robert M. Duboc, Jr. , Christopher J. Curtin
发明人： Jonathan C. Twichell , George R. Brandes , Michael W. Geis , John M. Macaulay , Robert M. Duboc, Jr. , Christopher J. Curtin
IPC分类号： H01J1/304 , H01J9/02 , H01J1/30
CPC分类号： H01J1/3042 , H01J9/025 , H01J2201/30403 , H01J2201/30457 , H01J2201/319 , Y10T428/24124 , Y10T428/24198
摘要： In one electron-emitting device, non-insulating particle bonding material (24) securely bonds electron-emissive carbon-containing particles (22) to an underlying non-insulating region (12). The carbon in each carbon-containing particle is in the form of diamond, graphite, amorphous carbon, or/and silicon carbide. In another electron-emitting device, electron-emissive pillars (22/28) overlie a non-insulating region (12). Each pillar is formed with an electron-emissive particle (22) and an underlying non-insulating pedestal (28).
摘要翻译：在一个电子发射器件中，非绝缘粒子接合材料（24）将电子发射含碳颗粒（22）牢固地粘合到下面的非绝缘区域（12）上。每个含碳颗粒中的碳为金刚石，石墨，无定形碳或/和碳化硅的形式。在另一个电子发射器件中，电子发射柱（22/28）覆盖在非绝缘区（12）上。每个柱形成有电子发射颗粒（22）和下面的非绝缘基座（28）。

7. 发明授权

US5374834A Ionic liquid-channel charge-coupled device 失效
标题翻译：离子液体通道电荷耦合器件
公开(公告)号：US5374834A
公开(公告)日：1994-12-20
申请号：US134965
申请日：1993-10-12
申请人： Michael W. Geis , Stephanie A. Gajar , Nancy Geis
发明人： Michael W. Geis , Stephanie A. Gajar , Nancy Geis
IPC分类号： B03C5/02 , G01N27/447 , H01L29/78
CPC分类号： G01N27/44752 , B03C5/026 , B03C5/028 , Y10S257/912
摘要： An ionic liquid-channel charge-coupled device that separates ions in a liquid sample according to ion mobility characteristics includes a channel having an inner wall that has a matrix liquid disposed within. An insulating material surrounds the channel, and an introduction element introduces a liquid sample into the channel. The sample is preferably a liquid solution that has at least one ionic specie present in the solution. The device further includes a gating element that establishes at least one charge packet in the channel in response to an externally applied input sisal, and a transport element that induces the charge packet to migrate through the channel. The gate element can be a plurality of spaced-apart, electrically conductive, gate structures that are alternately disposable between a high voltage state and a low voltage state. The transport element further includes an application element that applies a variable voltage to the gating element. This application of voltage induces the charge packets to form under the gate structures and, when the voltage applied to an adjacent gate has a higher potential, induces the packet to migrate through the channel in that direction.
摘要翻译：根据离子迁移率特性分离液体样品中的离子的离子液体通道电荷耦合器件包括具有设置在其内的基质液体的内壁的通道。绝缘材料围绕通道，引入元件将液体样品引入通道。样品优选是溶液中存在至少一种离子物质的液体溶液。该装置还包括门控元件，其响应于外部施加的输入剑麻建立信道中的至少一个充电分组，以及诱导电荷分组迁移通过该信道的传输元件。栅极元件可以是多个间隔开的导电的栅极结构，其在高电压状态和低电压状态之间交替地是一次性的。运输元件还包括向选通元件施加可变电压的应用元件。这种电压的应用引起电荷分组形成在栅极结构之下，并且当施加到相邻栅极的电压具有较高电位时，引起分组沿着该方向迁移通过通道。

8. 发明授权

US5002899A Electrical contacts on diamond 失效
标题翻译：钻石上的电触点
公开(公告)号：US5002899A
公开(公告)日：1991-03-26
申请号：US498479
申请日：1990-03-22
申请人： Michael W. Geis , Mordechai Rothschild , Daniel J. Ehrlich
发明人： Michael W. Geis , Mordechai Rothschild , Daniel J. Ehrlich
IPC分类号： H01L21/04 , H01L21/268
CPC分类号： H01L21/043 , H01L21/0435 , H01L21/268
摘要： A method for forming ohmic contacts on diamond substrates, where, by irradiating a diamond substrate with radiation having a wavelength in the neighborhood of 193 nm, regions of enhanced electrical conductivity may be formed without substantially heating the substrate surface. Metal films may be applied to obtain ohmic or Schottky type contacts on the irradiated sites. The invention may be used to form regions of anisotropic and isotropic enhanced conductivity. Regions of anisotropic conductivity may be employed as polarizing optical devices.
摘要翻译：一种用于在金刚石基底上形成欧姆接触的方法，其中通过用金刚石衬底辐射具有193nm附近的波长的辐射，可以在基本上不加热衬底表面的情况下形成增强导电性的区域。可以施加金属膜以在辐照位置上获得欧姆或肖特基型接触。本发明可用于形成各向异性和各向同性增强导电性的区域。可以采用各向异性导电性区域作为偏振光学器件。

9. 发明授权

US4734152A Dry etching patterning of electrical and optical materials 失效
标题翻译：电光学材料的干蚀刻图案化
公开(公告)号：US4734152A
公开(公告)日：1988-03-29
申请号：US73905
申请日：1987-07-13
申请人： Michael W. Geis , Nikolay N. Efremow , Stella W. Pang
发明人： Michael W. Geis , Nikolay N. Efremow , Stella W. Pang
IPC分类号： H01L21/306 , H01L21/3065 , H01L21/308 , H01L21/311 , H01L21/3213 , H01L21/465 , B44C1/22 , C03C15/00 , C23F1/02
CPC分类号： H01L21/30621 , H01L21/3065 , H01L21/308 , H01L21/31116 , H01L21/31138 , H01L21/32135 , H01L21/32136 , H01L21/465
摘要： A new anisotropic dry etching system using a hot jet tube to heat and dissociate non-reactive source gas to form a directed flux of reactive specie or radicals for etching materials through openings in a resist or a reusable stencil of SiN.sub.x wherein x is in the range of 1.5 to 0.5. Si and GaAs may be etched using Cl.sub.2, F.sub.3, Br.sub.2 or SF.sub.6 source gasses. Pb or Hg, Cd, Te may be etched using n-butane, dimethyl ether or acetone as a source gas for CH.sub.3 radicals. The tube may be formed of tungsten or where fluorine is used as a source gas, an irridium tube is preferred. Alternatively, a tube formed of rhenium or an alloy of rhenium and tungsten is preferred for some applications.
摘要翻译：一种新的各向异性干蚀刻系统，其使用热喷射管来加热和解离非反应性源气体，以形成反应物质或自由基的定向通量，以通过SiN x的抗蚀剂或可再利用的模板中的开口蚀刻材料，其中x在为1.5〜0.5。可以使用Cl2，F3，Br2或SF6源气体来蚀刻Si和GaAs。可以使用正丁烷，二甲醚或丙酮作为CH3自由基的源气体来蚀刻Pb或Hg，Cd，Te。管可以由钨形成或者使用氟作为原料气体，优选为铱管。或者，对于一些应用，优选由铼或铼和钨的合金形成的管。

10. 发明授权

US4670088A Lateral epitaxial growth by seeded solidification 失效
标题翻译：通过种子凝固进行外侧外延生长
公开(公告)号：US4670088A
公开(公告)日：1987-06-02
申请号：US828601
申请日：1986-02-11
申请人： Bor-Yeu Tsaur , John C. C. Fan , Michael W. Geis
发明人： Bor-Yeu Tsaur , John C. C. Fan , Michael W. Geis
IPC分类号： C30B13/00 , C30B13/06 , C30B27/00 , H01L21/20 , H01L21/324 , C30B19/00
CPC分类号： H01L21/324 , C30B13/00 , C30B13/06 , C30B27/00 , C30B29/60 , H01L21/2022 , Y10S148/134
摘要： An improved method and apparatus for crystallizing amorphous or polycrystalline material is disclosed. In this invention, a material which is to be crystallized is formed on a substrate and single crystalline seed material is disposed in contact and/or adjacent to or with at least a portion of the material which is to be crystallized. A layer of material which serves as a "wetting agent" is then formed over the material to be crystallized. The structure thus formed is subjected to a heat treatment which melts the material being crystallized and when the material solidifies its crystalline structure is substantially epitaxial based on the seed material. The "wetting agent" layer serves to prevent deleterious balling up of the material during crystallization.
摘要翻译：公开了一种用于结晶非晶或多晶材料的改进方法和装置。在本发明中，将要结晶的材料形成在基底上，并且将单晶种子材料设置成接触和/或邻近或与要结晶的材料的至少一部分接触。然后在要结晶的材料上形成用作“润湿剂”的材料层。对由此形成的结构进行热处理，该热处理熔化正在结晶的材料，并且当材料固化其晶体结构基于种子材料基本上是外延的。 “润湿剂”层用于防止在结晶过程中材料的有害的滚珠。

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