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1. 发明授权

US07462893B2 Method of fabricating GaN 失效
标题翻译：制造GaN的方法
公开(公告)号：US07462893B2
公开(公告)日：2008-12-09
申请号：US11545520
申请日：2006-10-11
申请人： Jai-yong Han , Jun-sung Choi , In-jae Song
发明人： Jai-yong Han , Jun-sung Choi , In-jae Song
IPC分类号： H01L31/071 , H01L31/109 , H01L31/0328 , H01L31/0336
CPC分类号： C30B25/02 , C30B29/406 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/02513 , H01L21/0254 , H01L21/02658
摘要： A method of fabricating a thick gallium nitride (GaN) layer includes forming a porous GaN layer having a thickness of 10-1000 nm by etching a GaN substrate in a reaction chamber in an HCI and NH3 gas atmosphere and forming an in-situ GaN growth layer in the reaction chamber. The method of forming the porous GaN layer and the thick GaN layer in-situ proceeds in a single chamber. The method is very simplified compared to the prior art. In this way, the entire process is performed in one chamber, and in particular, GaN etching and growth are performed using an HVPE process gas such that costs are greatly reduced.
摘要翻译：制造厚氮化镓（GaN）层的方法包括通过在HCl和NH 3气体气氛中的反应室中蚀刻GaN衬底来形成厚度为10-1000nm的多孔GaN层，并形成原位GaN生长在反应室中。在单个室中原位形成多孔GaN层和厚GaN层的方法。与现有技术相比，该方法非常简单。以这种方式，整个工艺在一个室中进行，特别是使用HVPE工艺气体进行GaN蚀刻和生长，使得成本大大降低。

2. 发明申请

US20070092980A1 Method of fabricating GaN 失效
标题翻译：制造GaN的方法
公开(公告)号：US20070092980A1
公开(公告)日：2007-04-26
申请号：US11545520
申请日：2006-10-11
申请人： Jai-yong Han , Jun-sung Choi , In-jae Song
发明人： Jai-yong Han , Jun-sung Choi , In-jae Song
IPC分类号： H01L21/00
CPC分类号： C30B25/02 , C30B29/406 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/02513 , H01L21/0254 , H01L21/02658
摘要： A method of fabricating a thick GaN layer includes forming a porous GaN layer having a thickness of 10-1000 nm by etching a GaN substrate in a reaction chamber in an HCl and NH3 gas atmosphere and forming an in-situ GaN growth layer in the reaction chamber. The method of forming the porous GaN layer and the thick GaN layer in-situ proceeds in a single chamber. The method is very simplified compared to the prior art. In this way, the entire process is performed in one chamber, and in particular, GaN etching and growth are performed using an HVPE process gas such that costs are greatly reduced.
摘要翻译：制造厚GaN层的方法包括通过在HCl和NH 3气体气氛中在反应室中蚀刻GaN衬底来形成厚度为10-1000nm的多孔GaN层，并形成在反应室中生长层。在单个室中原位形成多孔GaN层和厚GaN层的方法。与现有技术相比，该方法非常简单。以这种方式，整个工艺在一个室中进行，特别是使用HVPE工艺气体进行GaN蚀刻和生长，使得成本大大降低。

3. 发明授权

US07192873B1 Method of manufacturing nano scale semiconductor device using nano particles 有权
标题翻译：使用纳米颗粒制造纳米级半导体器件的方法
公开(公告)号：US07192873B1
公开(公告)日：2007-03-20
申请号：US11240473
申请日：2005-10-03
申请人： Hoon Kim , In-jae Song , Won-joo Kim , Byoung-Iyong Choi
发明人： Hoon Kim , In-jae Song , Won-joo Kim , Byoung-Iyong Choi
IPC分类号： H01L21/311
CPC分类号： H01L21/8238 , H01L21/3212 , H01L33/08 , H01L33/24 , Y10S977/755 , Y10S977/758 , Y10S977/773
摘要： Provided is a method of manufacturing a nano scale semiconductor device, such as a nano scale P-N junction device or a CMOS using nano particles without using a mask or a fine pattern. The method includes dispersing uniformly a plurality of nano particles on a semiconductor substrate, forming an insulating layer covering the nano particles on the semiconductor substrate, partly removing the upper surfaces of the nano particles and the insulating layer, selectively removing the nano particles from the insulating layer, and partly forming doped semiconductor layers in the semiconductor substrate by partly doping the semiconductor substrate through spaces formed by removing the nano particles.
摘要翻译：提供了一种使用纳米级P-N结器件或使用纳米颗粒的CMOS而不使用掩模或精细图案的纳米级半导体器件的制造方法。该方法包括在半导体衬底上均匀分散多个纳米颗粒，形成覆盖半导体衬底上的纳米颗粒的绝缘层，部分去除纳米颗粒和绝缘层的上表面，从绝缘体中选择性地除去纳米颗粒层，并且通过部分地通过去除纳米颗粒形成的空间将半导体衬底部分地掺杂在半导体衬底中部分地形成掺杂半导体层。

4. 发明申请

US20060226445A1 Silicon optoelectronic device, manufacturing method thereof, and image input and/or output apparatus using the same 有权
标题翻译：硅光电子器件及其制造方法，以及使用其的图像输入和/或输出装置
公开(公告)号：US20060226445A1
公开(公告)日：2006-10-12
申请号：US11284107
申请日：2005-11-22
申请人： In-jae Song , Byoung-lyong Choi
发明人： In-jae Song , Byoung-lyong Choi
IPC分类号： H01L29/739 , H01L31/00
CPC分类号： H01L31/1804 , H01L27/14621 , H01L27/14685 , H01L27/156 , H01L31/02162 , H01L31/0236 , H01L31/03529 , H01L31/1872 , H01L33/18 , Y02E10/547 , Y02P70/521
摘要： A method of manufacturing a silicon optoelectronic device, a silicon optoelectronic device manufactured by the method, and an image input and/or output apparatus having the silicon optoelectronic device are provided. The method includes: preparing an n-type or p-type silicon-based substrate; forming a polysilicon in one or more regions of the surface of the substrate; oxidizing the surface of the substrate where the polysilicon is formed, to form a silicon oxidation layer on the substrate, and forming a microdefect flection pattern at the interface between the substrate and the silicon oxidation layer, wherein the microdefect flection pattern is formed by the oxidation accelerated by oxygen traveling through boundaries of the grains in the polysilicon; exposing the microdefect flection pattern by etching the silicon oxidation layer; and forming a doping region by doping the exposed microdefect flection pattern with a dopant of the opposite type to the substrate.
摘要翻译：提供一种制造硅光电子器件的方法，通过该方法制造的硅光电子器件以及具有硅光电器件的图像输入和/或输出装置。该方法包括：制备n型或p型硅基衬底; 在所述衬底的表面的一个或多个区域中形成多晶硅; 氧化形成多晶硅的基板的表面，在基板上形成硅氧化层，在基板与硅氧化层之间的界面处形成微缺陷弯曲图案，其中通过氧化形成微缺陷弯曲图案通过在多晶硅中的晶粒的边界移动的氧加速; 通过蚀刻硅氧化层暴露微缺陷弯曲图案; 以及通过将与所述衬底相反类型的掺杂剂掺杂所述暴露的微缺陷弯曲图案来形成掺杂区域。

5. 发明申请

US20050145896A1 Memory device and method of manufacturing the same 有权
标题翻译：存储器件及其制造方法
公开(公告)号：US20050145896A1
公开(公告)日：2005-07-07
申请号：US11002812
申请日：2004-12-03
申请人： In-jae Song , Won-joo Kim , Sun-ae Seo
发明人： In-jae Song , Won-joo Kim , Sun-ae Seo
IPC分类号： H01L21/8247 , H01L21/28 , H01L21/336 , H01L21/8242 , H01L27/115 , H01L29/423 , H01L29/788 , H01L29/792 , H01L29/76
CPC分类号： H01L29/792 , H01L21/28282 , H01L29/66833
摘要： A memory device and a method of fabricating the same are provided. The method includes forming a gate stack on a semiconductor substrate and partially exposing upper end portions of the semiconductor substrate by etching the gate stack to form a gate stack structure, and implanting a dopant into the exposed portions of the semiconductor substrate to form source and drain regions, wherein the gate stack structure is etched such that its width increases from top to bottom. Accordingly, it is possible to manufacture a memory device with high integration, using a simplified manufacture process.
摘要翻译：提供了一种存储器件及其制造方法。该方法包括在半导体衬底上形成栅极叠层，并通过蚀刻栅叠层来部分地暴露半导体衬底的上端部分以形成栅叠层结构，并将掺杂剂注入半导体衬底的暴露部分以形成源极和漏极区域，其中蚀刻栅极堆叠结构，使得其宽度从顶部向底部增加。因此，可以使用简化的制造工艺来制造具有高集成度的存储器件。

6. 发明授权

US07537956B2 Silicon optoelectronic device manufacturing method and silicon optoelectronic device manufactured by thereof and image input and/or output apparatus having the same 有权
标题翻译：硅光电器件制造方法和由其制造的硅光电子器件以及具有该硅光电子器件的方法和图像输入和/或输出设备
公开(公告)号：US07537956B2
公开(公告)日：2009-05-26
申请号：US11285192
申请日：2005-11-23
申请人： In-jae Song , Byoung-lyong Choi
发明人： In-jae Song , Byoung-lyong Choi
IPC分类号： H01L21/00
CPC分类号： H01L33/0058 , H01L27/14601 , H01L27/14645 , H01L27/14689 , H01L27/14698 , H01L27/156 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method of manufacturing a silicon optoelectronic device, a silicon optoelectronic device manufactured by the method and an image input and/or output apparatus having the silicon optoelectronic device are provided. The method includes: preparing an n-type or a p-type silicon-based substrate; forming a polysilicon having a predetermined depth at one or more predetermined regions of a surface of the substrate in order to form a microdefect flection pattern having a desired microcavity length; oxidizing the surface of the substrate where the polysilicon is formed for forming a silicon oxidation layer on the substrate and forming a microdefect flection pattern having a desired microcavity length at an interface between the substrate and the silicon oxidation layer, wherein the microdefect flection pattern is formed by a difference between an oxidation rate of the polysilicon and an oxidation rate of a material of the substrate during formation of the silicon oxidation layer; exposing the microdefect flection pattern by etching a region of the silicon oxidation layer where the polysilicon is formed; and forming a doping region by doping the exposed microdefect flection pattern in a type opposite to a type of the substrate.
摘要翻译：提供一种制造硅光电子器件的方法，通过该方法制造的硅光电子器件和具有硅光电子器件的图像输入和/或输出装置。该方法包括：制备n型或p型硅基衬底; 在所述基板的表面的一个或多个预定区域处形成具有预定深度的多晶硅，以便形成具有期望的微腔长度的微缺陷弯曲图案; 氧化形成多晶硅的衬底的表面，以在衬底上形成硅氧化层，并在衬底和硅氧化层之间的界面处形成具有期望的微腔长度的微缺陷弯曲图案，其中形成微缺陷弯曲图案通过在形成硅氧化层期间多晶硅的氧化速率与衬底的材料的氧化速率之间的差异; 通过蚀刻形成多晶硅的硅氧化层的区域来暴露微缺陷弯曲图案; 以及通过以与衬底类型相反的类型掺杂暴露的微缺陷弯曲图案来形成掺杂区域。

7. 发明授权

US07491997B2 Memory device and method of manufacturing the same 有权
标题翻译：存储器件及其制造方法
公开(公告)号：US07491997B2
公开(公告)日：2009-02-17
申请号：US11002812
申请日：2004-12-03
申请人： In-jae Song , Won-joo Kim , Sun-ae Seo
发明人： In-jae Song , Won-joo Kim , Sun-ae Seo
IPC分类号： H01L29/76
CPC分类号： H01L29/792 , H01L21/28282 , H01L29/66833
摘要： A memory device and a method of fabricating the same are provided. The method includes forming a gate stack on a semiconductor substrate and partially exposing upper end portions of the semiconductor substrate by etching the gate stack to form a gate stack structure, and implanting a dopant into the exposed portions of the semiconductor substrate to form source and drain regions, wherein the gate stack structure is etched such that its width increases from top to bottom. Accordingly, it is possible to manufacture a memory device with high integration, using a simplified manufacture process.
摘要翻译：提供了一种存储器件及其制造方法。该方法包括在半导体衬底上形成栅极叠层，并通过蚀刻栅叠层来部分地暴露半导体衬底的上端部分以形成栅叠层结构，并将掺杂剂注入半导体衬底的暴露部分以形成源极和漏极区域，其中蚀刻栅极堆叠结构，使得其宽度从顶部向底部增加。因此，可以使用简化的制造工艺来制造具有高集成度的存储器件。

8. 发明授权

US07670862B2 Silicon optoelectronic device, manufacturing method thereof, and image input and/or output apparatus using the same 有权
标题翻译：硅光电子器件及其制造方法，以及使用其的图像输入和/或输出装置
公开(公告)号：US07670862B2
公开(公告)日：2010-03-02
申请号：US11284107
申请日：2005-11-22
申请人： In-jae Song , Byoung-Iyong Choi
发明人： In-jae Song , Byoung-Iyong Choi
IPC分类号： H01L21/00
CPC分类号： H01L31/1804 , H01L27/14621 , H01L27/14685 , H01L27/156 , H01L31/02162 , H01L31/0236 , H01L31/03529 , H01L31/1872 , H01L33/18 , Y02E10/547 , Y02P70/521
摘要： A method of manufacturing a silicon optoelectronic device, a silicon optoelectronic device manufactured by the method, and an image input and/or output apparatus having the silicon optoelectronic device are provided. The method includes: preparing an n-type or p-type silicon-based substrate; forming a polysilicon in one or more regions of the surface of the substrate; oxidizing the surface of the substrate where the polysilicon is formed, to form a silicon oxidation layer on the substrate, and forming a microdefect flection pattern at the interface between the substrate and the silicon oxidation layer, wherein the microdefect flection pattern is formed by the oxidation accelerated by oxygen traveling through boundaries of the grains in the polysilicon; exposing the microdefect flection pattern by etching the silicon oxidation layer; and forming a doping region by doping the exposed microdefect flection pattern with a dopant of the opposite type to the substrate.
摘要翻译：提供一种制造硅光电子器件的方法，通过该方法制造的硅光电子器件以及具有硅光电器件的图像输入和/或输出装置。该方法包括：制备n型或p型硅基衬底; 在所述衬底的表面的一个或多个区域中形成多晶硅; 氧化形成多晶硅的基板的表面，在基板上形成硅氧化层，在基板与硅氧化层之间的界面处形成微缺陷弯曲图案，其中通过氧化形成微缺陷弯曲图案通过在多晶硅中的晶粒的边界移动的氧加速; 通过蚀刻硅氧化层暴露微缺陷弯曲图案; 以及通过将与所述衬底相反类型的掺杂剂掺杂所述暴露的微缺陷弯曲图案来形成掺杂区域。

9. 发明申请

US20070054445A1 METHOD OF MANUFACTURING NANO SCALE SEMICONDUCTOR DEVICE USING NANO PARTICLES 有权
标题翻译：使用纳米颗粒制造纳米尺度半导体器件的方法
公开(公告)号：US20070054445A1
公开(公告)日：2007-03-08
申请号：US11240473
申请日：2005-10-03
申请人： Hoon Kim , In-jae Song , Won-joo Kim , Byoung-lyong Choi
发明人： Hoon Kim , In-jae Song , Won-joo Kim , Byoung-lyong Choi
IPC分类号： H01L21/338 , H01L21/461
CPC分类号： H01L21/8238 , H01L21/3212 , H01L33/08 , H01L33/24 , Y10S977/755 , Y10S977/758 , Y10S977/773
摘要： Provided is a method of manufacturing a nano scale semiconductor device, such as a nano scale P-N junction device or a CMOS using nano particles without using a mask or a fine pattern. The method includes dispersing uniformly a plurality of nano particles on a semiconductor substrate, forming an insulating layer covering the nano particles on the semiconductor substrate, partly removing the upper surfaces of the nano particles and the insulating layer, selectively removing the nano particles from the insulating layer, and partly forming doped semiconductor layers in the semiconductor substrate by partly doping the semiconductor substrate through spaces formed by removing the nano particles.
摘要翻译：提供了一种使用纳米级P-N结器件或使用纳米颗粒的CMOS而不使用掩模或精细图案的纳米级半导体器件的制造方法。该方法包括在半导体衬底上均匀分散多个纳米颗粒，形成覆盖半导体衬底上的纳米颗粒的绝缘层，部分去除纳米颗粒和绝缘层的上表面，从绝缘体中选择性地除去纳米颗粒层，并且通过部分地通过去除纳米颗粒形成的空间将半导体衬底部分地掺杂在半导体衬底中部分地形成掺杂半导体层。

10. 发明申请

US20060113552A1 Silicon optoelectronic device manufacturing method and silicon optoelectronic device manufactured by thereof and image input and/or output apparatus having the same 有权
公开(公告)号：US20060113552A1
公开(公告)日：2006-06-01
申请号：US11285192
申请日：2005-11-23
申请人： In-jae Song , Byoung-lyong Choi
发明人： In-jae Song , Byoung-lyong Choi
IPC分类号： G05B15/00 , H01L21/00 , H01L33/00
CPC分类号： H01L33/0058 , H01L27/14601 , H01L27/14645 , H01L27/14689 , H01L27/14698 , H01L27/156 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method of manufacturing a silicon optoelectronic device, a silicon optoelectronic device manufactured by the method and an image input and/or output apparatus having the silicon optoelectronic device are provided. The method includes: preparing an n-type or a p-type silicon-based substrate; forming a polysilicon having a predetermined depth at one or more predetermined regions of a surface of the substrate in order to form a microdefect flection pattern having a desired microcavity length; oxidizing the surface of the substrate where the polysilicon is formed for forming a silicon oxidation layer on the substrate and forming a microdefect flection pattern having a desired microcavity length at an interface between the substrate and the silicon oxidation layer, wherein the microdefect flection pattern is formed by a difference between an oxidation rate of the polysilicon and an oxidation rate of a material of the substrate during formation of the silicon oxidation layer; exposing the microdefect flection pattern by etching a region of the silicon oxidation layer where the polysilicon is formed; and forming a doping region by doping the exposed microdefect flection pattern in a type opposite to a type of the substrate.

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