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    • 2. 发明申请
    • APPARATUS FOR CHEMICAL MECHANICAL POLISHING
    • 化学机械抛光装置
    • US20120322345A1
    • 2012-12-20
    • US13163227
    • 2011-06-17
    • Jagan RangarajanAlpay Yilmaz
    • Jagan RangarajanAlpay Yilmaz
    • B24B1/00
    • B24B37/04
    • Embodiments of the invention generally relate to systems and methods to CMP substrates. The systems generally include a polishing system that has a polishing module and cleaning module. Each of the polishing module and the cleaning module can be partitioned into independently operable sections. Each section of the polishing module includes a platen, at least one load cup, and at least one polishing head. Each section of the cleaning module includes a cleaning station and one or more robots adapted to advance substrates through the cleaning station. The methods generally include polishing a plurality of substrates in a polishing system having independently operable sections. During the polishing of the substrates in one section, a second of the independently operable stations may be maintained or cleaned.
    • 本发明的实施例一般涉及CMP衬底的系统和方法。 该系统通常包括具有抛光模块和清洁模块的抛光系统。 抛光模块和清洁模块中的每一个可以被划分成可独立操作的部分。 抛光模块的每个部分包括压板,至少一个负载杯和至少一个抛光头。 清洁模块的每个部分包括清洁站和一个或多个机器人,其适于使基板通过清洁站。 所述方法通常包括在具有可独立操作的部分的抛光系统中抛光多个基板。 在一个部分中抛光衬底期间,可以维持或清洁可独立操作的第二个工位。
    • 4. 发明申请
    • CHEMICAL MECHANICAL POLISHING PLATFORM ARCHITECTURE
    • 化学机械抛光平台建筑
    • US20130115862A1
    • 2013-05-09
    • US13293088
    • 2011-11-09
    • JAGAN RANGARAJANAlpay Yilmaz
    • JAGAN RANGARAJANAlpay Yilmaz
    • B24B25/00
    • B24B27/0023B24B27/0069B24B37/345B24B41/02
    • Embodiments of the invention provide polishing systems for increasing production efficiency, maximizing substrate throughput, and reducing production costs. The polishing systems generally include one or more polishing stations for performing a CMP process and one or more cleaning stations at which post-polishing cleaning is performed. The number of cleaning stations and polishing heads present may be increased depending on the desired substrate throughput or processing time at each polishing station. The number of polishing stations or cleaning stations can also be reduced in order to reduce the footprint of the polishing system. The polishing pads at each polishing station can be adjusted in size to accommodate one or more polishing heads simultaneously depending on substrate throughput and system footprint. Additionally, the polishing pads may be replaced with a fixed abrasive pad, or adapted to polish 450 millimeter substrates.
    • 本发明的实施例提供了用于提高生产效率,最大化基板产量并降低生产成本的抛光系统。 抛光系统通常包括用于执行CMP处理的一个或多个抛光站和执行抛光后清洁的一个或多个清洁站。 存在的清洁站和抛光头的数量可以根据所需的基板生产量或每个抛光站的处理时间而增加。 还可以减少抛光站或清洁站的数量,以减少抛光系统的占地面积。 每个抛光站的抛光垫可以根据基板产量和系统占地面积同时调节尺寸以适应一个或多个抛光头。 此外,抛光垫可以用固定的研磨垫替代,或适于抛光450毫米的基底。