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    • 1. 发明申请
    • LIQUID CRYSTAL DISPLAY AND METHOD OF MANUFACTURING THE SAME
    • 液晶显示器及其制造方法
    • US20120154720A1
    • 2012-06-21
    • US13194626
    • 2011-07-29
    • Jae-Hyun PARKJong Oh KIMDa Hye CHOJin Suk SEOJong Bum CHOI
    • Jae-Hyun PARKJong Oh KIMDa Hye CHOJin Suk SEOJong Bum CHOI
    • G02F1/13363G02F1/1339
    • G02F1/1339G02F1/13394G02F1/1345
    • A liquid crystal display that includes: a first substrate and a second substrate each including a display area and a non-display area, the display and non-display areas positioned opposite to each other; a plurality of data driver ICs formed in the non-display area of the first substrate; a plurality of data voltage supply lines connected to the data driver ICs and extending to the display area of the first substrate; a sealant positioned between the first substrate and the second substrate to surround the display areas; and a step compensating member formed outside the sealant on the non-display area of one of the first substrate and the second substrate, in which at least some of the data voltage supply lines extend under the sealant, and the step compensating member is positioned generally inline with the at least some of the data voltage supply lines.
    • 一种液晶显示器,包括:第一基板和第二基板,每个包括显示区域和非显示区域,所述显示器和非显示区域彼此相对定位; 形成在第一基板的非显示区域中的多个数据驱动器IC; 连接到数据驱动器IC并延伸到第一基板的显示区域的多个数据电压供给线; 定位在所述第一基板和所述第二基板之间以围绕所述显示区域的密封剂; 以及在所述第一基板和所述第二基板中的一个的非显示区域上形成在所述密封剂外部的阶梯补偿部件,其中所述数据电压供给线中的至少一些在所述密封剂下方延伸,并且所述台阶补偿部件一般地定位 与至少一些数据电压供应线一致。
    • 6. 发明申请
    • METHOD FABRICATING NONVOLATILE MEMORY DEVICE
    • 方法制造非易失性存储器件
    • US20100159675A1
    • 2010-06-24
    • US12644224
    • 2009-12-22
    • Ji-Hyun JEONGJae-Hee OHJae-Hyun PARK
    • Ji-Hyun JEONGJae-Hee OHJae-Hyun PARK
    • H01L21/28
    • H01L45/06G11C13/0004H01L27/2409H01L27/2463H01L45/1233H01L45/1273H01L45/144H01L45/148H01L45/1683
    • A method of fabricating a nonvolatile memory device includes; forming a first sacrificial layer pattern including a first open area that extends in a first direction on a lower dielectric layer, forming a pre-lower dielectric layer pattern including a recess that extends in the first direction using the first sacrificial layer pattern, forming a second sacrificial layer pattern including a second open area that extends in a second direction on the pre-lower dielectric layer pattern and the first sacrificial layer pattern, wherein the second open area intersects the first open area, forming a lower dielectric layer pattern including contact holes spaced apart in the recess using the first sacrificial layer pattern and second sacrificial layer pattern, wherein the contact holes extend to a bottom of the lower dielectric layer pattern, and forming a bottom electrode in the contact hole.
    • 一种制造非易失性存储器件的方法包括: 形成第一牺牲层图案,所述第一牺牲层图案包括在下电介质层上沿第一方向延伸的第一开口区域,形成包括使用所述第一牺牲层图案沿所述第一方向延伸的凹部的预下介电层图案,形成第二牺牲层图案 牺牲层图案包括在预下电介质层图案和第一牺牲层图案上沿第二方向延伸的第二开口区域,其中第二开口区域与第一开放区域相交,形成包括间隔开的接触孔的下介电层图案 在使用第一牺牲层图案和第二牺牲层图案的凹部中分开,其中接触孔延伸到下介电层图案的底部,并且在接触孔中形成底部电极。