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1. 发明授权

US07436001B2 Vertical GaN-based LED and method of manufacturing the same 有权
标题翻译：垂直GaN基LED及其制造方法
公开(公告)号：US07436001B2
公开(公告)日：2008-10-14
申请号：US11490254
申请日：2006-07-21
申请人： Jae Hoon Lee , Bang Won Oh , Hee Seok Choi , Jeong Tak Oh , Seok Beom Choi , Su Yeol Lee
发明人： Jae Hoon Lee , Bang Won Oh , Hee Seok Choi , Jeong Tak Oh , Seok Beom Choi , Su Yeol Lee
IPC分类号： H01L27/15
CPC分类号： H01L33/22 , H01L33/14
摘要： A vertical GaN-based LED and a method of manufacturing the same are provided. The vertical GaN-based LED includes an n-electrode, a first n-type GaN layer, a first AlGaN layer, a GaN layer, a second AlGaN layer, a second n-type GaN layer, an active layer, a p-type GaN layer, and a structure support layer. The first n-type GaN layer has uneven patterns having a plurality of protuberances. The first AlGaN layer is formed under the first n-type GaN layer, and the GaN layer is formed under the first AlGaN layer. The active layer is formed under the second n-type GaN layer, and the p-type GaN layer is formed under the active layer. A p-electrode is formed under the p-type GaN layer, and the structure support layer is formed under the p-electrode.
摘要翻译：提供了一种垂直GaN基LED及其制造方法。垂直GaN基LED包括n电极，第一n型GaN层，第一AlGaN层，GaN层，第二AlGaN层，第二n型GaN层，有源层，p型 GaN层和结构支撑层。第一n型GaN层具有具有多个突起的不均匀图案。第一AlGaN层形成在第一n型GaN层下方，并且GaN层形成在第一AlGaN层的下方。有源层形成在第二n型GaN层下面，p型GaN层形成在有源层下面。在p型GaN层的下方形成有p电极，在p电极的下方形成有结构支撑层。

2. 发明申请

US20070267640A1 Semiconductor light emitting diode and method of manufacturing the same 审中-公开
标题翻译：半导体发光二极管及其制造方法
公开(公告)号：US20070267640A1
公开(公告)日：2007-11-22
申请号：US11436651
申请日：2006-05-19
申请人： Jae Hoon Lee , Hee Seok Choi , Seok Beom Choi , Jeong Tak Oh , Su Yeol Lee
发明人： Jae Hoon Lee , Hee Seok Choi , Seok Beom Choi , Jeong Tak Oh , Su Yeol Lee
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L33/22 , H01L33/32 , H01L33/42 , H01L2933/0083
摘要： The present invention relates to a semiconductor light emitting diode. The semiconductor light emitting diode includes a substrate; an n-type nitride semiconductor layer that is formed on the substrate; an active layer that is formed on the n-type nitride semiconductor layer; a p-type nitride semiconductor layer that is formed on the active layer; a first undoped GaN layer that is formed on the p-type nitride semiconductor layer; an AlGaN layer that is formed on the first undoped GaN layer so as to provide a two-dimensional electron gas layer to the interface with the first undoped GaN layer; a second undoped GaN layer that is formed on the AlGaN layer and has irregularities such that the light generated in the active layer is not internally reflected toward the active layer; a p-type transparent electrode that is formed on the second undoped GaN layer; and an n-type electrode and p-type electrode that are formed to be respectively connected onto the n-type nitride semiconductor layer and the p-type transparent electrode.
摘要翻译：本发明涉及一种半导体发光二极管。半导体发光二极管包括基板; 形成在所述基板上的n型氮化物半导体层; 形成在n型氮化物半导体层上的有源层; 形成在有源层上的p型氮化物半导体层; 在p型氮化物半导体层上形成的第一未掺杂GaN层; AlGaN层，形成在第一未掺杂的GaN层上，以便向与第一未掺杂GaN层的界面提供二维电子气层; 第二未掺杂的GaN层，其形成在AlGaN层上并且具有凹凸，使得在有源层中产生的光不向有源层内部反射; 形成在第二未掺杂GaN层上的p型透明电极; 以及形成为分别连接在n型氮化物半导体层和p型透明电极上的n型电极和p型电极。

3. 发明授权

US07361521B2 Method of manufacturing vertical GaN-based light emitting diode 有权
标题翻译：制造垂直GaN基发光二极管的方法
公开(公告)号：US07361521B2
公开(公告)日：2008-04-22
申请号：US11503944
申请日：2006-08-15
申请人： Jeong Tak Oh , Jae Hoon Lee , Seok Beom Choi
发明人： Jeong Tak Oh , Jae Hoon Lee , Seok Beom Choi
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L33/007
摘要： The present invention relates to a method of manufacturing a vertical GaN-based LED. The method includes forming an insulating pattern on a substrate to define LED regions having a predetermined size; sequentially stacking an n-type GaN-based semiconductor layer, an active layer, and a p-type GaN-based semiconductor layer on the substrate except for the insulating pattern to form a light emitting structure; removing the insulating pattern to divide the light emitting structure into LED sections having a predetermined size; forming p-electrodes on the LED sections, respectively; forming a structure support layer on the p-electrodes; removing the substrate to expose the divided n-type GaN-based semiconductor layer; and forming n-electrodes on the exposed n-type GaN-based semiconductor layer.
摘要翻译：本发明涉及一种制造垂直GaN基LED的方法。该方法包括在基板上形成绝缘图案以限定具有预定尺寸的LED区域; 在除了绝缘图案之外的衬底上依次堆叠n型GaN基半导体层，有源层和p型GaN基半导体层以形成发光结构; 去除绝缘图案以将发光结构分成具有预定尺寸的LED部分; 分别在LED部分上形成p电极; 在p电极上形成结构支撑层; 去除衬底以暴露分开的n型GaN基半导体层; 在暴露的n型GaN基半导体层上形成n电极。

4. 发明授权

US07372078B2 Vertical gallium-nitride based light emitting diode 有权
标题翻译：垂直氮化镓基发光二极管
公开(公告)号：US07372078B2
公开(公告)日：2008-05-13
申请号：US11581003
申请日：2006-10-16
申请人： Tae Sung Jang , Su Yeol Lee , Seok Beom Choi
发明人： Tae Sung Jang , Su Yeol Lee , Seok Beom Choi
IPC分类号： H01L33/00
CPC分类号： H01L33/46 , H01L33/0079 , H01L33/385
摘要： A vertical GaN-based LED includes: an n-electrode; a light-emitting structure in which an n-type GaN layer, an active layer, and a p-type GaN layer are sequentially formed under the n-electrode; a p-electrode formed under the light-emitting structure; a passivation layer formed to cover the side and bottom surfaces of the light-emitting structure and expose a predetermined portion of the p-electrode, the passivation layer being formed of a distributed Bragg reflector (DBR); a plating seed layer formed under the passivation layer and the p-electrode; and a support layer formed under the plating seed layer.
摘要翻译：垂直GaN基LED包括：n电极; 在n电极下依次形成n型GaN层，有源层和p型GaN层的发光结构; 形成在发光结构下的p电极; 钝化层，其形成为覆盖所述发光结构的侧表面和底表面并暴露所述p电极的预定部分，所述钝化层由分布式布拉格反射器（DBR）形成; 形成在钝化层下面的电镀种子层和p电极; 以及形成在电镀种子层下的支撑层。

5. 发明授权

US08178378B2 Method of manufacturing vertical nitride semiconductor light emitting diode 有权
标题翻译：立式氮化物半导体发光二极管的制造方法
公开(公告)号：US08178378B2
公开(公告)日：2012-05-15
申请号：US12909204
申请日：2010-10-21
申请人： Sang Ho Yoon , Su Yeol Lee , Doo Go Baik , Seok Beom Choi , Tae Sung Jang , Jong Gun Woo
发明人： Sang Ho Yoon , Su Yeol Lee , Doo Go Baik , Seok Beom Choi , Tae Sung Jang , Jong Gun Woo
IPC分类号： H01L21/56
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/20
摘要： A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.
摘要翻译：垂直氮化物基半导体LED包括结构支撑层; 形成在结构支撑层上的p电极; 形成在p电极上的p型氮化物半导体层; 形成在p型氮化物半导体层上的有源层; 形成在有源层上的n型氮化物半导体层; 形成在n型氮化物半导体层的一部分上的n电极; 以及形成在其上未形成有n电极的n型氮化物半导体层的区域上的缓冲层，其上形成有凹凸。与n电极接触的n型氮化物半导体层的表面是平坦的。

6. 发明授权

US07838317B2 Vertical nitride semiconductor light emitting diode and method of manufacturing the same 失效
标题翻译：垂直氮化物半导体发光二极管及其制造方法
公开(公告)号：US07838317B2
公开(公告)日：2010-11-23
申请号：US12544868
申请日：2009-08-20
申请人： Sang Ho Yoon , Su Yeol Lee , Doo Go Baik , Seok Beom Choi , Tae Sung Jang , Jong Gun Woo
发明人： Sang Ho Yoon , Su Yeol Lee , Doo Go Baik , Seok Beom Choi , Tae Sung Jang , Jong Gun Woo
IPC分类号： H01L21/56
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/20
摘要： A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.
摘要翻译：垂直氮化物基半导体LED包括结构支撑层; 形成在结构支撑层上的p电极; 形成在p电极上的p型氮化物半导体层; 形成在p型氮化物半导体层上的有源层; 形成在有源层上的n型氮化物半导体层; 形成在n型氮化物半导体层的一部分上的n电极; 以及形成在其上未形成有n电极的n型氮化物半导体层的区域上的缓冲层，其上形成有凹凸。与n电极接触的n型氮化物半导体层的表面是平坦的。

7. 发明授权

US08198114B2 Vertical nitride semiconductor light emitting diode and method of manufacturing the same 有权
标题翻译：垂直氮化物半导体发光二极管及其制造方法
公开(公告)号：US08198114B2
公开(公告)日：2012-06-12
申请号：US12909297
申请日：2010-10-21
申请人： Sang Ho Yoon , Su Yeol Lee , Doo Go Baik , Seok Beom Choi , Tae Sung Jang , Jong Gun Woo
发明人： Sang Ho Yoon , Su Yeol Lee , Doo Go Baik , Seok Beom Choi , Tae Sung Jang , Jong Gun Woo
IPC分类号： H01L21/56
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/20
摘要： A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.
摘要翻译：垂直氮化物基半导体LED包括结构支撑层; 形成在结构支撑层上的p电极; 形成在p电极上的p型氮化物半导体层; 形成在p型氮化物半导体层上的有源层; 形成在有源层上的n型氮化物半导体层; 形成在n型氮化物半导体层的一部分上的n电极; 以及形成在其上未形成有n电极的n型氮化物半导体层的区域上的缓冲层，其上形成有凹凸。与n电极接触的n型氮化物半导体层的表面是平坦的。

8. 发明授权

US07872276B2 Vertical gallium nitride-based light emitting diode and method of manufacturing the same 有权
标题翻译：立式氮化镓系发光二极管及其制造方法
公开(公告)号：US07872276B2
公开(公告)日：2011-01-18
申请号：US11742818
申请日：2007-05-01
申请人： Su Yeol Lee , Bang Won Oh , Doo Go Baik , Tae Sung Jang , Jong Gun Woo , Seok Beom Choi , Sang Ho Yoon , Dong Woo Kim , In Tae Yeo
发明人： Su Yeol Lee , Bang Won Oh , Doo Go Baik , Tae Sung Jang , Jong Gun Woo , Seok Beom Choi , Sang Ho Yoon , Dong Woo Kim , In Tae Yeo
IPC分类号： H01L33/00
CPC分类号： H01L33/387 , H01L33/20 , H01L33/22 , H01L33/405 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a vertical GaN-based LED comprises forming a light emission structure in which an n-type GaN-based semiconductor layer, an active layer, and a p-type GaN-based semiconductor layer are sequentially laminated on a substrate; etching the light emission structure such that the light emission structure is divided into units of LED; forming a p-electrode on each of the divided light emission structures; filling a non-conductive material between the divided light emission structures; forming a metal seed layer on the resulting structure; forming a first plated layer on the metal seed layer excluding a region between the light emission structures; forming a second plated layer on the metal seed layer between the first plated layers; separating the substrate from the light emission structures; removing the non-conductive material between the light emission structures exposed by separating the substrate; forming an n-electrode on the n-type GaN-based semiconductor layer; and removing portions of the metal seed layer and the second plated layer between the light emission structures.
摘要翻译：制造垂直GaN基LED的方法包括：形成其中n型GaN基半导体层，有源层和p型GaN基半导体层依次层压在基板上的发光结构; 蚀刻发光结构，使得发光结构被分为LED单元; 在每个划分的发光结构上形成p电极; 在分开的发光结构之间填充非导电材料; 在所得结构上形成金属种子层; 在所述金属种子层上形成除了所述发光结构之间的区域的第一镀层; 在所述第一镀层之间的所述金属种子层上形成第二镀层; 将衬底与发光结构分离; 去除通过分离衬底而暴露的发光结构之间的非导电材料; 在n型GaN基半导体层上形成n电极; 以及去除所述发光结构之间的所述金属种子层和所述第二镀层的部分。

9. 发明申请

US20080093618A1 Vertical light emitting diode and method of manufacturing the same 有权
标题翻译：垂直发光二极管及其制造方法
公开(公告)号：US20080093618A1
公开(公告)日：2008-04-24
申请号：US11889562
申请日：2007-08-14
申请人： Su Yeol Lee , Sang Ho Yoon , Doo Go Baik , Seok Beom Choi , Tae Sung Jang , Jong Gun Woo
发明人： Su Yeol Lee , Sang Ho Yoon , Doo Go Baik , Seok Beom Choi , Tae Sung Jang , Jong Gun Woo
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/14 , H01L33/40
摘要： Provided is a vertical LED including an n-electrode; an n-type GaN layer formed under the n-electrode, the n-type GaN layer having a surface coming in contact with the n-electrode, the surface having a Ga+N layer containing a larger amount of Ga than that of N; an active layer formed under the n-type GaN layer; a p-type GaN layer formed under the active layer; a p-electrode formed under the p-type GaN layer; and a structure support layer formed under the p-electrode.
摘要翻译：提供包括n电极的垂直LED; 形成在n电极下面的n型GaN层，所述n型GaN层具有与n电极接触的表面，所述表面具有含有较大量的Ga + N层的Ga; 形成在n型GaN层下面的有源层; 形成在有源层下面的p型GaN层; 形成在p型GaN层下面的p电极; 以及在p电极下面形成的结构支撑层。

10. 发明授权

US08115220B2 Vertical light emitting diode and method of manufacturing the same 有权
公开(公告)号：US08115220B2
公开(公告)日：2012-02-14
申请号：US11889562
申请日：2007-08-14
申请人： Su Yeol Lee , Sang Ho Yoon , Doo Go Baik , Seok Beom Choi , Tae Sung Jang , Jong Gun Woo
发明人： Su Yeol Lee , Sang Ho Yoon , Doo Go Baik , Seok Beom Choi , Tae Sung Jang , Jong Gun Woo
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/14 , H01L33/40
摘要： Provided is a vertical LED including an n-electrode; an n-type GaN layer formed under the n-electrode, the n-type GaN layer having a surface coming in contact with the n-electrode, the surface having a Ga+N layer containing a larger amount of Ga than that of N; an active layer formed under the n-type GaN layer; a p-type GaN layer formed under the active layer; a p-electrode formed under the p-type GaN layer; and a structure support layer formed under the p-electrode.

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