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1. 发明授权

US07436001B2 Vertical GaN-based LED and method of manufacturing the same 有权
标题翻译：垂直GaN基LED及其制造方法
公开(公告)号：US07436001B2
公开(公告)日：2008-10-14
申请号：US11490254
申请日：2006-07-21
申请人： Jae Hoon Lee , Bang Won Oh , Hee Seok Choi , Jeong Tak Oh , Seok Beom Choi , Su Yeol Lee
发明人： Jae Hoon Lee , Bang Won Oh , Hee Seok Choi , Jeong Tak Oh , Seok Beom Choi , Su Yeol Lee
IPC分类号： H01L27/15
CPC分类号： H01L33/22 , H01L33/14
摘要： A vertical GaN-based LED and a method of manufacturing the same are provided. The vertical GaN-based LED includes an n-electrode, a first n-type GaN layer, a first AlGaN layer, a GaN layer, a second AlGaN layer, a second n-type GaN layer, an active layer, a p-type GaN layer, and a structure support layer. The first n-type GaN layer has uneven patterns having a plurality of protuberances. The first AlGaN layer is formed under the first n-type GaN layer, and the GaN layer is formed under the first AlGaN layer. The active layer is formed under the second n-type GaN layer, and the p-type GaN layer is formed under the active layer. A p-electrode is formed under the p-type GaN layer, and the structure support layer is formed under the p-electrode.
摘要翻译：提供了一种垂直GaN基LED及其制造方法。垂直GaN基LED包括n电极，第一n型GaN层，第一AlGaN层，GaN层，第二AlGaN层，第二n型GaN层，有源层，p型 GaN层和结构支撑层。第一n型GaN层具有具有多个突起的不均匀图案。第一AlGaN层形成在第一n型GaN层下方，并且GaN层形成在第一AlGaN层的下方。有源层形成在第二n型GaN层下面，p型GaN层形成在有源层下面。在p型GaN层的下方形成有p电极，在p电极的下方形成有结构支撑层。

2. 发明申请

US20070267640A1 Semiconductor light emitting diode and method of manufacturing the same 审中-公开
标题翻译：半导体发光二极管及其制造方法
公开(公告)号：US20070267640A1
公开(公告)日：2007-11-22
申请号：US11436651
申请日：2006-05-19
申请人： Jae Hoon Lee , Hee Seok Choi , Seok Beom Choi , Jeong Tak Oh , Su Yeol Lee
发明人： Jae Hoon Lee , Hee Seok Choi , Seok Beom Choi , Jeong Tak Oh , Su Yeol Lee
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L33/22 , H01L33/32 , H01L33/42 , H01L2933/0083
摘要： The present invention relates to a semiconductor light emitting diode. The semiconductor light emitting diode includes a substrate; an n-type nitride semiconductor layer that is formed on the substrate; an active layer that is formed on the n-type nitride semiconductor layer; a p-type nitride semiconductor layer that is formed on the active layer; a first undoped GaN layer that is formed on the p-type nitride semiconductor layer; an AlGaN layer that is formed on the first undoped GaN layer so as to provide a two-dimensional electron gas layer to the interface with the first undoped GaN layer; a second undoped GaN layer that is formed on the AlGaN layer and has irregularities such that the light generated in the active layer is not internally reflected toward the active layer; a p-type transparent electrode that is formed on the second undoped GaN layer; and an n-type electrode and p-type electrode that are formed to be respectively connected onto the n-type nitride semiconductor layer and the p-type transparent electrode.
摘要翻译：本发明涉及一种半导体发光二极管。半导体发光二极管包括基板; 形成在所述基板上的n型氮化物半导体层; 形成在n型氮化物半导体层上的有源层; 形成在有源层上的p型氮化物半导体层; 在p型氮化物半导体层上形成的第一未掺杂GaN层; AlGaN层，形成在第一未掺杂的GaN层上，以便向与第一未掺杂GaN层的界面提供二维电子气层; 第二未掺杂的GaN层，其形成在AlGaN层上并且具有凹凸，使得在有源层中产生的光不向有源层内部反射; 形成在第二未掺杂GaN层上的p型透明电极; 以及形成为分别连接在n型氮化物半导体层和p型透明电极上的n型电极和p型电极。

3. 发明授权

US07872276B2 Vertical gallium nitride-based light emitting diode and method of manufacturing the same 有权
标题翻译：立式氮化镓系发光二极管及其制造方法
公开(公告)号：US07872276B2
公开(公告)日：2011-01-18
申请号：US11742818
申请日：2007-05-01
申请人： Su Yeol Lee , Bang Won Oh , Doo Go Baik , Tae Sung Jang , Jong Gun Woo , Seok Beom Choi , Sang Ho Yoon , Dong Woo Kim , In Tae Yeo
发明人： Su Yeol Lee , Bang Won Oh , Doo Go Baik , Tae Sung Jang , Jong Gun Woo , Seok Beom Choi , Sang Ho Yoon , Dong Woo Kim , In Tae Yeo
IPC分类号： H01L33/00
CPC分类号： H01L33/387 , H01L33/20 , H01L33/22 , H01L33/405 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a vertical GaN-based LED comprises forming a light emission structure in which an n-type GaN-based semiconductor layer, an active layer, and a p-type GaN-based semiconductor layer are sequentially laminated on a substrate; etching the light emission structure such that the light emission structure is divided into units of LED; forming a p-electrode on each of the divided light emission structures; filling a non-conductive material between the divided light emission structures; forming a metal seed layer on the resulting structure; forming a first plated layer on the metal seed layer excluding a region between the light emission structures; forming a second plated layer on the metal seed layer between the first plated layers; separating the substrate from the light emission structures; removing the non-conductive material between the light emission structures exposed by separating the substrate; forming an n-electrode on the n-type GaN-based semiconductor layer; and removing portions of the metal seed layer and the second plated layer between the light emission structures.
摘要翻译：制造垂直GaN基LED的方法包括：形成其中n型GaN基半导体层，有源层和p型GaN基半导体层依次层压在基板上的发光结构; 蚀刻发光结构，使得发光结构被分为LED单元; 在每个划分的发光结构上形成p电极; 在分开的发光结构之间填充非导电材料; 在所得结构上形成金属种子层; 在所述金属种子层上形成除了所述发光结构之间的区域的第一镀层; 在所述第一镀层之间的所述金属种子层上形成第二镀层; 将衬底与发光结构分离; 去除通过分离衬底而暴露的发光结构之间的非导电材料; 在n型GaN基半导体层上形成n电极; 以及去除所述发光结构之间的所述金属种子层和所述第二镀层的部分。

4. 发明授权

US07695989B2 Method of manufacturing vertical gallium-nitride based light emitting diode 有权
标题翻译：制造垂直氮化镓基发光二极管的方法
公开(公告)号：US07695989B2
公开(公告)日：2010-04-13
申请号：US12406540
申请日：2009-03-18
申请人： Doo Go Baik , Bang Won Oh , Seok Beom Choi , Su Yeol Lee
发明人： Doo Go Baik , Bang Won Oh , Seok Beom Choi , Su Yeol Lee
IPC分类号： H01L21/00
CPC分类号： H01L33/14 , H01L33/02 , H01L33/32
摘要： A vertical GaN-based LED and a method of manufacturing the same are provided. The vertical GaN-based LED can prevent the damage of an n-type GaN layer contacting an n-type electrode, thereby stably securing the contact resistance of the n-electrode. The vertical GaN-based LED includes: a support layer; a p-electrode formed on the support layer; a p-type GaN layer formed on the p-electrode; an active layer formed on the p-type GaN layer; an n-type GaN layer for an n-type electrode contact, formed on the active layer; an etch stop layer formed on the n-type GaN layer to expose a portion of the n-type GaN layer; and an n-electrode formed on the n-type GaN layer exposed by the etch stop layer.
摘要翻译：提供了一种垂直GaN基LED及其制造方法。垂直GaN基LED可以防止与n型电极接触的n型GaN层的损坏，从而稳定地确保n电极的接触电阻。垂直GaN基LED包括：支撑层; 形成在支撑层上的p电极; 形成在p电极上的p型GaN层; 形成在p型GaN层上的有源层; 在有源层上形成用于n型电极接触的n型GaN层; 形成在所述n型GaN层上以暴露所述n型GaN层的一部分的蚀刻停止层; 以及形成在由蚀刻停止层露出的n型GaN层上的n电极。

5. 发明授权

US07573076B2 Vertical gallium-nitride based light emitting diode 有权
标题翻译：垂直氮化镓基发光二极管
公开(公告)号：US07573076B2
公开(公告)日：2009-08-11
申请号：US11634112
申请日：2006-12-06
申请人： Doo Go Baik , Bang Won Oh , Seok Beom Choi , Su Yeol Lee
发明人： Doo Go Baik , Bang Won Oh , Seok Beom Choi , Su Yeol Lee
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L33/02 , H01L33/32
摘要： A vertical GaN-based LED and a method of manufacturing the same are provided. The vertical GaN-based LED can prevent the damage of an n-type GaN layer contacting an n-type electrode, thereby stably securing the contact resistance of the n-electrode. The vertical GaN-based LED includes: a support layer; a p-electrode formed on the support layer; a p-type GaN layer formed on the p-electrode; an active layer formed on the p-type GaN layer; an n-type GaN layer for an n-type electrode contact, formed on the active layer; an etch stop layer formed on the n-type GaN layer to expose a portion of the n-type GaN layer; and an n-electrode formed on the n-type GaN layer exposed by the etch stop layer.
摘要翻译：提供了一种垂直GaN基LED及其制造方法。垂直GaN基LED可以防止与n型电极接触的n型GaN层的损坏，从而稳定地确保n电极的接触电阻。垂直GaN基LED包括：支承层; 形成在支撑层上的p电极; 形成在p电极上的p型GaN层; 形成在p型GaN层上的有源层; 在有源层上形成用于n型电极接触的n型GaN层; 形成在所述n型GaN层上以暴露所述n型GaN层的一部分的蚀刻停止层; 以及形成在由蚀刻停止层露出的n型GaN层上的n电极。

6. 发明授权

US07012284B2 Nitride semiconductor light emitting device and method of manufacturing the same 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US07012284B2
公开(公告)日：2006-03-14
申请号：US10837780
申请日：2004-05-04
申请人： Seok Beom Choi , Bang Won Oh , Hee Seok Choi
发明人： Seok Beom Choi , Bang Won Oh , Hee Seok Choi
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/025
摘要： Disclosed herein is a nitride semiconductor light emitting device. The nitride semiconductor light emitting device comprises an n-type nitride semiconductor layer on a substrate, an active layer formed on the n-type nitride semiconductor layer so that a portion of the n-type nitride semiconductor layer is exposed, a p-type nitride semiconductor layer formed on the active layer, a high-concentration dopant area on the p-type nitride semiconductor layer, a counter doping area on the high-concentration dopant areas, an n-side electrode formed on an exposed portion of the n-type nitride semiconductor layer, and a p-side electrode formed on the counter doping area. A satisfactory ohmic contact for the p-side electrode is provided by an ion implantation process and heat treatment.
摘要翻译：这里公开了一种氮化物半导体发光器件。氮化物半导体发光器件包括在衬底上的n型氮化物半导体层，形成在n型氮化物半导体层上的有源层，以使n型氮化物半导体层的一部分露出，p型氮化物形成在有源层上的半导体层，p型氮化物半导体层上的高浓度掺杂剂区域，高浓度掺杂剂区域上的相对掺杂区域，形成在n型氮化物半导体层的暴露部分上的n侧电极氮化物半导体层和形成在反掺杂区域上的p侧电极。通过离子注入工艺和热处理提供了用于p侧电极的令人满意的欧姆接触。

7. 发明授权

US07361521B2 Method of manufacturing vertical GaN-based light emitting diode 有权
标题翻译：制造垂直GaN基发光二极管的方法
公开(公告)号：US07361521B2
公开(公告)日：2008-04-22
申请号：US11503944
申请日：2006-08-15
申请人： Jeong Tak Oh , Jae Hoon Lee , Seok Beom Choi
发明人： Jeong Tak Oh , Jae Hoon Lee , Seok Beom Choi
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L33/007
摘要： The present invention relates to a method of manufacturing a vertical GaN-based LED. The method includes forming an insulating pattern on a substrate to define LED regions having a predetermined size; sequentially stacking an n-type GaN-based semiconductor layer, an active layer, and a p-type GaN-based semiconductor layer on the substrate except for the insulating pattern to form a light emitting structure; removing the insulating pattern to divide the light emitting structure into LED sections having a predetermined size; forming p-electrodes on the LED sections, respectively; forming a structure support layer on the p-electrodes; removing the substrate to expose the divided n-type GaN-based semiconductor layer; and forming n-electrodes on the exposed n-type GaN-based semiconductor layer.
摘要翻译：本发明涉及一种制造垂直GaN基LED的方法。该方法包括在基板上形成绝缘图案以限定具有预定尺寸的LED区域; 在除了绝缘图案之外的衬底上依次堆叠n型GaN基半导体层，有源层和p型GaN基半导体层以形成发光结构; 去除绝缘图案以将发光结构分成具有预定尺寸的LED部分; 分别在LED部分上形成p电极; 在p电极上形成结构支撑层; 去除衬底以暴露分开的n型GaN基半导体层; 在暴露的n型GaN基半导体层上形成n电极。

8. 发明授权

US08012779B2 Gallium nitride-based light emitting diode and method of manufacturing the same 有权
标题翻译：基于氮化镓的发光二极管及其制造方法
公开(公告)号：US08012779B2
公开(公告)日：2011-09-06
申请号：US11878360
申请日：2007-07-24
申请人： Seok Beom Choi , Bang Won Oh , Jong Gun Woo , Doo Go Baik
发明人： Seok Beom Choi , Bang Won Oh , Jong Gun Woo , Doo Go Baik
IPC分类号： H01L21/00 , H01L33/00
CPC分类号： H01L33/02 , H01L33/22
摘要： A vertical GaN-based LED comprises an n-electrode; an n-type GaN layer formed under the n-electrode, the n-type GaN layer having an irregular-surface structure which includes a first irregular-surface structure having irregularities formed at even intervals and a second irregular-surface structure having irregularities formed at uneven intervals, the second irregular-surface structure being formed on the first irregular-surface structure; an active layer formed under the n-type GaN layer; a p-type GaN layer formed under the active layer; a p-electrode formed under the p-type GaN layer; and a structure support layer formed under the p-electrode.
摘要翻译：垂直GaN基LED包括n电极; 形成在n电极下面的n型GaN层，所述n型GaN层具有不规则表面结构，所述n型GaN层包括具有以均匀间隔形成的凹凸的第一不规则表面结构和具有不规则形状的第二不规则表面结构第二不规则表面结构形成在第一不规则表面结构上; 形成在n型GaN层下面的有源层; 形成在有源层下面的p型GaN层; 形成在p型GaN层下面的p电极; 以及在p电极下面形成的结构支撑层。

9. 发明申请

US20090181485A1 METHOD OF MANUFACTURING VERTICAL GALLIUM-NITRIDE BASED LIGHT EMITTING DIODE 有权
标题翻译：立方氮化镓基发光二极管的制造方法
公开(公告)号：US20090181485A1
公开(公告)日：2009-07-16
申请号：US12406540
申请日：2009-03-18
申请人： Doo Go BAIK , Bang Won Oh , Seok Beom Choi , Su Yeo Lee
发明人： Doo Go BAIK , Bang Won Oh , Seok Beom Choi , Su Yeo Lee
IPC分类号： H01L21/20
CPC分类号： H01L33/14 , H01L33/02 , H01L33/32
摘要： A vertical GaN-based LED and a method of manufacturing the same are provided. The vertical GaN-based LED can prevent the damage of an n-type GaN layer contacting an n-type electrode, thereby stably securing the contact resistance of the n-electrode. The vertical GaN-based LED includes: a support layer; a p-electrode formed on the support layer; a p-type GaN layer formed on the p-electrode; an active layer formed on the p-type GaN layer; an n-type GaN layer for an n-type electrode contact, formed on the active layer; an etch stop layer formed on the n-type GaN layer to expose a portion of the n-type GaN layer; and an n-electrode formed on the n-type GaN layer exposed by the etch stop layer.
摘要翻译：提供了一种垂直GaN基LED及其制造方法。垂直GaN基LED可以防止与n型电极接触的n型GaN层的损坏，从而稳定地确保n电极的接触电阻。垂直GaN基LED包括：支承层; 形成在支撑层上的p电极; 形成在p电极上的p型GaN层; 形成在p型GaN层上的有源层; 在有源层上形成用于n型电极接触的n型GaN层; 形成在所述n型GaN层上以暴露所述n型GaN层的一部分的蚀刻停止层; 以及形成在由蚀刻停止层露出的n型GaN层上的n电极。

10. 发明授权

US07372078B2 Vertical gallium-nitride based light emitting diode 有权
标题翻译：垂直氮化镓基发光二极管
公开(公告)号：US07372078B2
公开(公告)日：2008-05-13
申请号：US11581003
申请日：2006-10-16
申请人： Tae Sung Jang , Su Yeol Lee , Seok Beom Choi
发明人： Tae Sung Jang , Su Yeol Lee , Seok Beom Choi
IPC分类号： H01L33/00
CPC分类号： H01L33/46 , H01L33/0079 , H01L33/385
摘要： A vertical GaN-based LED includes: an n-electrode; a light-emitting structure in which an n-type GaN layer, an active layer, and a p-type GaN layer are sequentially formed under the n-electrode; a p-electrode formed under the light-emitting structure; a passivation layer formed to cover the side and bottom surfaces of the light-emitting structure and expose a predetermined portion of the p-electrode, the passivation layer being formed of a distributed Bragg reflector (DBR); a plating seed layer formed under the passivation layer and the p-electrode; and a support layer formed under the plating seed layer.
摘要翻译：垂直GaN基LED包括：n电极; 在n电极下依次形成n型GaN层，有源层和p型GaN层的发光结构; 形成在发光结构下的p电极; 钝化层，其形成为覆盖所述发光结构的侧表面和底表面并暴露所述p电极的预定部分，所述钝化层由分布式布拉格反射器（DBR）形成; 形成在钝化层下面的电镀种子层和p电极; 以及形成在电镀种子层下的支撑层。

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