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1. 发明申请

US20130220930A1 CLEANING METHOD OF IMMERSION LIQUID, IMMERSION LIQUID CLEANING COMPOSITION, AND SUBSTRATE 有权
标题翻译：浸渍液的清洗方法，浸没液清洗组合物和底物
公开(公告)号：US20130220930A1
公开(公告)日：2013-08-29
申请号：US13856442
申请日：2013-04-04
申请人： JSR Corporation
发明人： Kentaro HARADA , Goji WAKAMATSU
IPC分类号： B01D15/00 , C08K5/07 , C08K5/103
CPC分类号： B01D15/00 , B01J20/261 , B01J20/267 , B01J20/282 , B01J20/327 , C08K5/07 , C08K5/103
摘要： A cleaning method of an immersion liquid includes supplying an immersion liquid on a surface of a cleaning substrate. The immersion liquid is to be used in a liquid immersion lithography apparatus. The cleaning substrate has a substrate and an organic film laminated on a top face side of the substrate. The immersion liquid is allowed to move on the substrate to remove contaminants from the immersion liquid.
摘要翻译：浸渍液的清洗方法包括将浸渍液体供给到清洗基板的表面。浸没液体用于液浸光刻设备中。清洁基板具有层叠在基板的顶面侧的基板和有机膜。允许浸没液体在基底上移动以除去浸没液体中的污染物。

2. 发明申请

US20150267046A1 COMPOSITION FOR FILM FORMATION, RESIST UNDERLAYER FILM, AND FORMING METHOD OF RESIST UNDERLAYER FILM, AND PATTERN-FORMING METHOD 有权
标题翻译：电影形成用组合物，电阻膜，电阻膜形成方法和图案形成方法
公开(公告)号：US20150267046A1
公开(公告)日：2015-09-24
申请号：US14662642
申请日：2015-03-19
申请人： JSR CORPORATION
发明人： Hayato NAMAI , Goji WAKAMATSU
IPC分类号： C08L47/00 , G03F7/09 , B05D3/02 , G03F7/20
CPC分类号： H01L21/0332 , B05D3/0254 , C08F12/32 , C08F12/34 , C08L47/00 , C09D125/16 , G03F7/09 , G03F7/091 , G03F7/094 , G03F7/20 , H01L21/02118 , H01L21/0271 , H01L21/0276 , H01L21/31144
摘要： A composition for film formation includes a compound represented by formula (1), and a solvent. R1 represents a monovalent group including an aromatic ring. n is an integer of 3 to 6. At least one monovalent group represented by R1 further includes a group including an ethylenic double bond. a plurality of R1s are identical or different. A part or all of hydrogen atoms on the benzene ring in the formula (1) and on the aromatic ring are unsubstituted or substituted with a halogen atom or an alkyl group having 1 to 10 carbon atoms.
摘要翻译：用于成膜的组合物包括由式（1）表示的化合物和溶剂。 R 1表示包含芳环的一价基团。 n为3〜6的整数。由R 1表示的至少一个一价基团还包括含有烯属双键的基团。多个R1相同或不同。式（1）中苯环上和芳香环上的一部分或全部氢原子是未取代的或被卤原子或具有1-10个碳原子的烷基取代。

3. 发明申请

US20130098870A1 METHOD FOR FORMING PATTERN 有权
标题翻译：形成图案的方法
公开(公告)号：US20130098870A1
公开(公告)日：2013-04-25
申请号：US13630207
申请日：2012-09-28
申请人： JSR CORPORATION
发明人： Goji WAKAMATSU , Hayato NAMAI , Syun AOKI
IPC分类号： B44C1/22
CPC分类号： B44C1/227 , G03F7/00 , G03F7/091 , G03F7/094 , H01L21/00 , Y10S430/118
摘要： A method for forming a pattern includes providing a composition to form a resist underlayer film on a surface of a substrate to be processed. The composition contains a calixarene based compound having a group represented by a following formula (i) bound to at least a part of an aromatic ring or at least a part of a heteroaromatic ring of the calixarene based compound. The resist underlayer film on the surface of the substrate is treated with heat or an acid. A resist pattern is formed on a surface of the resist underlayer film. The resist underlayer film and the substrate are etched using the resist pattern as a mask to form the pattern on the substrate. The dry-etched resist underlayer film is removed from the substrate with a basic solution. —O—R1 (i)
摘要翻译：形成图案的方法包括提供组合物以在待加工基材的表面上形成抗蚀剂下层膜。组合物含有具有由下式（i）表示的基团的杯芳烃基化合物，其结合至杯芳烃基化合物的至少一部分芳族环或至少一部分杂芳环。用热或酸处理衬底表面上的抗蚀剂下层膜。抗蚀剂图案形成在抗蚀剂下层膜的表面上。使用抗蚀剂图案作为掩模蚀刻抗蚀剂下层膜和基板以在基板上形成图案。用基本溶液从基板上除去干蚀刻的抗蚀剂下层膜。 -O-R1（i）

4. 发明申请

US20170154782A1 COMPOSITION FOR FILM FORMATION, FILM, PRODUCTION METHOD OF PATTERNED SUBSTRATE, AND COMPOUND 审中-公开
公开(公告)号：US20170154782A1
公开(公告)日：2017-06-01
申请号：US14955473
申请日：2015-12-01
申请人： JSR Corporation
发明人： Shin-ya NAKAFUJI , Goji WAKAMATSU , Tsubasa ABE , Kazunori SAKAI
IPC分类号： H01L21/308 , H01L21/027 , H01L21/306 , C08G65/40
CPC分类号： C08G65/4043 , C08G65/40 , C08G65/4031 , G03F7/094 , H01L21/0271 , H01L21/0274 , H01L21/30604 , H01L21/3081
摘要： A composition comprises a compound comprising a partial structure represented by formula (1) and comprising an intermolecular bond-forming group; and a solvent. X1 and X2 each independently represent a substituted or unsubstituted ring structure having 4 to 10 ring atoms constituted taken together with a spiro carbon atom and carbon atoms of an aromatic ring. R1 and R2 each independently represent a halogen atom, a hydroxy group, a nitro group or a monovalent organic group. a1 and a2 are each independently an integer of 0 to 8. n1 and n2 are each independently an integer of 0 to 2; k1 and k2 are each independently an integer of 0 to 8. A sum of k1 and k2 is no less than 1, and a sum of a1 and k1. A sum of a2 and k2 are no greater than 8.

5. 发明申请

US20160085152A1 COMPOSITION FOR FILM FORMATION, RESIST UNDERLAYER FILM AND FORMING METHOD THEREOF, PATTERN-FORMING METHOD AND COMPOUND 有权
标题翻译：用于膜形成的组合物，抗静电膜和其形成方法，图案形成方法和化合物
公开(公告)号：US20160085152A1
公开(公告)日：2016-03-24
申请号：US14959223
申请日：2015-12-04
申请人： JSR CORPORATION
发明人： Shin-ya NAKAFUJI , Fumihiro TOYOKAWA , Goji WAKAMATSU , Shingo TAKASUGI , Tooru KIMURA
IPC分类号： G03F7/11 , G03F7/36 , C07C15/14 , C07C211/50 , C07C15/18 , G03F7/16 , C07C33/28
CPC分类号： G03F7/11 , C07C15/14 , C07C15/18 , C07C15/50 , C07C15/54 , C07C15/58 , C07C25/24 , C07C33/28 , C07C33/38 , C07C39/21 , C07C43/215 , C07C211/50 , C07C211/58 , C08F38/00 , G03F7/094 , G03F7/168 , G03F7/36 , H01L21/0271
摘要： A composition for film formation includes a compound represented by formula (1) and a solvent. In the formula (1), R1, R2 and R3 each independently represent a group represented by the formula (a). In the formula (a), RA represents a hydrogen atom, an aryl group, or an alkyl group unsubstituted or substituted with at least one of a hydroxy group and an aryl group. RB represents a single bond or an arylene group. A part or all of hydrogen atoms on an aromatic ring of the aryl group and the arylene group may be substituted with a halogen atom, a hydroxy group, an amino group, a sulfanyl group, or a monovalent organic group having 1 to 20 carbon atoms and not including an aromatic ring.
摘要翻译：用于成膜的组合物包括由式（1）表示的化合物和溶剂。在式（1）中，R 1，R 2和R 3各自独立地表示由式（a）表示的基团。在式（a）中，RA表示氢原子，芳基或未被取代或被羟基和芳基中的至少一个取代的烷基。 RB表示单键或亚芳基。芳基和亚芳基的芳环上的一部分或全部氢原子可以被卤素原子，羟基，氨基，硫烷基或碳原子数为1〜20的一价有机基团取代而不包括芳环。

6. 发明申请

US20180114698A2 COMPOSITION FOR FILM FORMATION, FILM, PRODUCTION METHOD OF PATTERNED SUBSTRATE, AND COMPOUND 审中-公开
公开(公告)号：US20180114698A2
公开(公告)日：2018-04-26
申请号：US14955473
申请日：2015-12-01
申请人： JSR Corporation
发明人： Shin-ya NAKAFUJI , Goji WAKAMATSU , Tsubasa ABE , Kazunori SAKAI
IPC分类号： H01L21/308 , C08G65/40 , H01L21/027 , H01L21/306
CPC分类号： C08G65/4043 , C08G65/40 , C08G65/4031 , G03F7/094 , H01L21/0271 , H01L21/0274 , H01L21/30604 , H01L21/3081
摘要： A composition comprises a compound comprising a partial structure represented by formula (1) and comprising an intermolecular bond-forming group; and a solvent. X1 and X2 each independently represent a substituted or unsubstituted ring structure having 4 to 10 ring atoms constituted taken together with a spiro carbon atom and carbon atoms of an aromatic ring. R1 and R2 each independently represent a halogen atom, a hydroxy group, a nitro group or a monovalent organic group. a1 and a2 are each independently an integer of 0 to 8. n1 and n2 are each independently an integer of 0 to 2; k1 and k2 are each independently an integer of 0 to 8. A sum of k1 and k2 is no less than 1, and a sum of a1 and k1. A sum of a2 and k2 are no greater than 8.

7. 发明申请

US20160257842A1 COMPOSITION FOR RESIST UNDERLAYER FILM FORMATION, RESIST UNDERLAYER FILM, AND PRODUCTION METHOD OF PATTERNED SUBSTRATE 审中-公开
标题翻译：用于电阻膜形成，耐下层膜的组合物和图案基板的生产方法
公开(公告)号：US20160257842A1
公开(公告)日：2016-09-08
申请号：US15059372
申请日：2016-03-03
申请人： JSR CORPORATION
发明人： Goji WAKAMATSU , Naoya NOSAKA , Yuushi MATSUMURA , Yoshio TAKIMOTO , Tsubasa ABE , Toru KIMURA
IPC分类号： C09D161/14 , G03F7/36 , G03F7/11
CPC分类号： C09D161/14 , C08G8/20 , C08G8/36 , C08G14/04 , C08G14/12 , C09D161/34 , G03F7/11
摘要： A composition comprises a compound and a solvent. The compound comprises a carbon-carbon triple bond-containing group, and at least one partial structure having an aromatic ring. A total number of benzene nuclei constituting the aromatic ring in the at least one partial structure is no less than 4. The at least one partial structure preferably comprises a partial structure represented by formula (1). The sum of p1, p2, p3 and p4 is preferably no less than 1. At least one of R1 to R4 preferably represents a monovalent carbon-carbon triple bond-containing group. The at least one partial structure also preferably comprises a partial structure represented by formula (2). The sum of q1, q2, q3 and q4 is preferably no less than 1. At least one of R5 to R8 preferably represents a monovalent carbon-carbon triple bond-containing group.
摘要翻译：组合物包含化合物和溶剂。该化合物包含含碳 - 碳三键的基团和至少一个具有芳环的部分结构。在至少一个部分结构中构成芳环的苯核总数不小于4.至少一个部分结构优选包含由式（1）表示的部分结构。 p1，p2，p3和p4的总和优选为1以上.R 1〜R 4中的至少一个优选表示含有一价碳 - 碳三键的基团。所述至少一种部分结构还优选包含由式（2）表示的部分结构。 q1，q2，q3和q4的总和优选为1以上.R5至R8中的至少一个优选表示含有一价碳 - 碳三键的基团。

8. 发明申请

US20180046081A1 RESIST UNDERLAYER FILM-FORMING COMPOSITION, RESIST UNDERLAYER FILM, RESIST UNDERLAYER FILM-FORMING PROCESS, AND PRODUCTION METHOD OF PATTERNED SUBSTRATE 审中-公开
公开(公告)号：US20180046081A1
公开(公告)日：2018-02-15
申请号：US15672660
申请日：2017-08-09
申请人： JSR CORPORATION
发明人： Masayuki MIYAKE , Goji WAKAMATSU , Tsubasa ABE , Kazunori TAKANASHI , Kazunori SAKAI
IPC分类号： G03F7/09 , G03F7/004 , C08G8/20 , H01L21/027 , H01L21/033 , G03F7/11 , H01L21/02 , H01L21/768
摘要： A resist underlayer film-forming composition includes a solvent, and a compound comprising an aromatic ring. The solvent includes a first solvent having a normal boiling point of less than 156° C., and a second solvent having a normal boiling point of no less than 156° C. and less than 300° C. The resist underlayer film-forming composition is for use in forming a resist underlayer film to be overlaid on a patterned substrate. A production method of a patterned substrate includes applying the resist underlayer film-forming composition on a patterned substrate to obtain a coating film on the patterned substrate. The coating film is heated to obtain a resist underlayer film. A resist pattern is formed on an upper face side of the resist underlayer film. The resist underlayer film and the substrate are etched using the resist pattern as a mask.

9. 发明申请

US20170137663A9 COMPOSITION FOR RESIST UNDERLAYER FILM FORMATION, RESIST UNDERLAYER FILM, AND PRODUCTION METHOD OF PATTERNED SUBSTRATE 审中-公开
公开(公告)号：US20170137663A9
公开(公告)日：2017-05-18
申请号：US15059372
申请日：2016-03-03
申请人： JSR CORPORATION
发明人： Goji WAKAMATSU , Naoya NOSAKA , Yuushi MATSUMURA , Yoshio TAKIMOTO , Tsubasa ABE , Toru KIMURA
IPC分类号： C09D161/14 , G03F7/36 , G03F7/11
CPC分类号： C09D161/14 , C08G8/20 , C08G8/36 , C08G14/04 , C08G14/12 , C09D161/34 , G03F7/11 , G03F7/36
摘要： A composition comprises a compound and a solvent. The compound comprises a carbon-carbon triple bond-containing group, and at least one partial structure having an aromatic ring. A total number of benzene nuclei constituting the aromatic ring in the at least one partial structure is no less than 4. The at least one partial structure preferably comprises a partial structure represented by formula (1). The sum of p1, p2, p3 and p4 is preferably no less than 1. At least one of R1 to R4 preferably represents a monovalent carbon-carbon triple bond-containing group. The at least one partial structure also preferably comprises a partial structure represented by formula (2). The sum of q1, q2, q3 and q4 is preferably no less than 1. At least one of R5 to R8 preferably represents a monovalent carbon-carbon triple bond-containing group.

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