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1. 发明申请

US20120241690A1 PREPARATION OF GRAPHENE BY MECHANICALLY THINNING GRAPHITE MATERIALS 有权
标题翻译：通过机械稀释石墨材料制备石墨
公开(公告)号：US20120241690A1
公开(公告)日：2012-09-27
申请号：US13505815
申请日：2010-11-03
申请人： Izabela Janowska , Dominique Begin , Kambiz Chizari , Ovidiu Ersen , Pierre Bernhardt , Thierry Romero , Marc Ledoux , Cuong Pham-Huu
发明人： Izabela Janowska , Dominique Begin , Kambiz Chizari , Ovidiu Ersen , Pierre Bernhardt , Thierry Romero , Marc Ledoux , Cuong Pham-Huu
IPC分类号： H01B1/04 , B82Y40/00 , B82Y30/00
CPC分类号： C01B31/0206 , B82Y30/00 , B82Y40/00 , C01B32/15 , C01B32/19 , C01B2204/04 , C01B2204/22 , C01B2204/28 , C01B2204/32
摘要： The preparation of graphene, mono-, bi- and multi-layers from graphite-based precursor materials, for example, pencil lead or graphite, by a method of mechanical thinning on the surface of a planar substrate with controlled roughness, followed by sonication in order to collect the graphene deposited on the substrate in a liquid medium. The bearing force during thinning by mechanical friction enables the number of graphene sheets deposited on the surface of the substrate to be controlled.
摘要翻译：通过在具有受控粗糙度的平面基板的表面上通过机械稀化的方法从石墨基前体材料（例如铅笔铅或石墨）制备石墨烯，单层，双层和多层，然后超声处理以在液体介质中收集沉积在基底上的石墨烯。通过机械摩擦减薄的轴承力使得能够控制沉积在基板表面上的石墨烯片的数量。

2. 发明授权

US09309122B2 Preparation of graphene by mechanically thinning graphite materials 有权
标题翻译：通过机械稀化石墨材料制备石墨烯
公开(公告)号：US09309122B2
公开(公告)日：2016-04-12
申请号：US13505815
申请日：2010-11-03
申请人： Izabela Janowska , Dominique Begin , Kambiz Chizari , Ovidiu Ersen , Pierre Bernhardt , Thierry Romero , Marc Ledoux , Cuong Pham-Huu
发明人： Izabela Janowska , Dominique Begin , Kambiz Chizari , Ovidiu Ersen , Pierre Bernhardt , Thierry Romero , Marc Ledoux , Cuong Pham-Huu
IPC分类号： C01B31/02 , C01B31/04 , H01B1/04 , C08K5/00 , B02C19/18 , B82Y40/00 , B82Y30/00
CPC分类号： C01B31/0206 , B82Y30/00 , B82Y40/00 , C01B32/15 , C01B32/19 , C01B2204/04 , C01B2204/22 , C01B2204/28 , C01B2204/32
摘要： The preparation of graphene, mono-, bi- and multi-layers from graphite-based precursor materials, for example, pencil lead or graphite, by a method of mechanical thinning on the surface of a planar substrate with controlled roughness, followed by sonication in order to collect the graphene deposited on the substrate in a liquid medium. The bearing force during thinning by mechanical friction enables the number of graphene sheets deposited on the surface of the substrate to be controlled.
摘要翻译：通过在具有受控粗糙度的平面基板的表面上通过机械稀化的方法从石墨基前体材料（例如铅笔铅或石墨）制备石墨烯，单层，双层和多层，然后超声处理以在液体介质中收集沉积在基底上的石墨烯。通过机械摩擦减薄的轴承力使得能够控制沉积在基板表面上的石墨烯片的数量。

3. 发明申请

US20060011945A1 Photocatalyst and process for purifying gas effluent by photocatalytic oxidation 失效
标题翻译：光催化氧化法净化气体流出物
公开(公告)号：US20060011945A1
公开(公告)日：2006-01-19
申请号：US10380290
申请日：2002-10-28
申请人： Valerie Spitzer-Keller , Pierre Bernhardt , Cuong Pham-Huu , Francois Garin , Marc Ledoux , Charlotte Pham-Huu
发明人： Valerie Spitzer-Keller , Pierre Bernhardt , Cuong Pham-Huu , Francois Garin , Marc Ledoux , Charlotte Pham-Huu
IPC分类号： H01L31/109
CPC分类号： A61L9/205 , B01D53/8668 , B01D2255/20707 , B01D2255/20776 , B01D2255/802 , B01D2257/708 , B01D2257/91 , B01J23/30 , B01J27/224 , B01J35/0006 , B01J35/002
摘要： The photocatalyst based on a composite WO3—SiC/TiO2 semiconductor and subjected to radiation whose wavelength is at least partly less than 400 nm gives photocatalytic oxidation of volatile organic compounds and leads to their total mineralisation into CO2 and H2O. The process for the photocatalytic purification of industrial, agricultural or domestic gaseous effluent may be conducted at room pressure and temperature. Its conversion rate is high and stable.
摘要翻译：基于复合WO 3 -SiC / TiO 2半导体并经受波长至少部分小于400nm的辐射的光催化剂提供挥发性有机化合物的光催化氧化，导致它们的总矿化成为CO 2 H 2和H 2 O。工业，农业或家用气态流出物的光催化净化方法可以在室温和温度下进行。其转换率高，稳定。

4. 发明申请

US20100010272A1 DEHYDRATION OF METHANOL TO DIMETHYL ETHER USING CATALYSTS BASED ON A ZEOLITE SUPPORTED ON SILICON CARBIDE 有权
标题翻译：使用基于在碳化硅上支持的沸石的催化剂将甲醇脱氢成二甲醚
公开(公告)号：US20100010272A1
公开(公告)日：2010-01-14
申请号：US12518196
申请日：2007-12-07
申请人： Svetlana Ivanova , Estelle Vanhaecke , Suzanne Libs , Benoit Louis , Cuong Pham-Huu , Marc Ledoux
发明人： Svetlana Ivanova , Estelle Vanhaecke , Suzanne Libs , Benoit Louis , Cuong Pham-Huu , Marc Ledoux
IPC分类号： C07C41/09
CPC分类号： C07C41/09 , C07C43/043
摘要： A process for the preparation of dimethyl ether by catalytic dehydration of methanol, in which there is used a catalyst based on a zeolite immobilized on a silicon carbide support, for example a zeolite of type ZSM-5 supported on silicon carbide extrudates or on a silicon carbide cellular foam.
摘要翻译：通过甲醇的催化脱水制备二甲醚的方法，其中使用基于固定在碳化硅载体上的沸石的催化剂，例如支持在碳化硅挤出物上或在硅上的ZSM-5型沸石硬质合金细胞泡沫。

5. 发明申请

US20050103990A1 Composites based on carbon nanotubes or nanofibers deposited on an activated support for use in catalysis 失效
标题翻译：基于碳纳米管或纳米纤维的复合材料沉积在活化载体上用于催化
公开(公告)号：US20050103990A1
公开(公告)日：2005-05-19
申请号：US10496495
申请日：2002-11-20
申请人： Cuong Pham-Huu , Ricardo Vieira , Marc Ledoux , Loic Charbonniere , Raymond Ziessel
发明人： Cuong Pham-Huu , Ricardo Vieira , Marc Ledoux , Loic Charbonniere , Raymond Ziessel
IPC分类号： B01D53/88 , B01D53/94 , B01J21/18 , B01J23/46 , B01J23/74 , B01J23/745 , B01J23/755 , B01J35/06 , B01J35/10 , B01J37/02 , B01J37/025 , B01J37/08 , B64G1/40 , C01B31/02 , C01B31/20 , C06D5/04 , H01M4/86 , H01M4/90 , H01M4/96 , H01J49/00
CPC分类号： B82Y30/00 , B01D53/885 , B01D53/94 , B01J21/18 , B01J21/185 , B01J23/468 , B01J23/74 , B01J23/745 , B01J23/755 , B01J35/002 , B01J35/0026 , B01J35/06 , B01J35/1014 , B01J35/1038 , B01J37/0201 , B01J37/084 , B64G1/401 , B82Y40/00 , C01B32/162 , C01B32/50 , C06D5/04 , H01M4/8605 , H01M4/90 , H01M4/96 , Y10S977/742 , Y10S977/744 , Y10S977/748
摘要： A composite comprising a support activated by impregnation and carbon nanotubes or nanofibers formed by vapor deposition, wherein the weight of said carbon nanotubes or nanofibers formed on the said support is at least equal to 10.
摘要翻译：包含通过浸渍活化的载体和通过气相沉积形成的碳纳米管或纳米纤维的复合物，其中形成在所述载体上的所述碳纳米管或纳米纤维的重量至少等于10。

6. 发明授权

US6083471A Method and catalyst for catalytically oxidizing a low concentration of H.sub.2 S in a gas to give sulphur 失效
标题翻译：用于催化氧化气体中低浓度H 2 S以产生硫的方法和催化剂
公开(公告)号：US6083471A
公开(公告)日：2000-07-04
申请号：US875703
申请日：1997-11-19
申请人： Andre Philippe , Sabine Savin-Poncet , Jean Nougayrede , Marc Ledoux , Cuong Pham Huu , Claude Crouzet
发明人： Andre Philippe , Sabine Savin-Poncet , Jean Nougayrede , Marc Ledoux , Cuong Pham Huu , Claude Crouzet
IPC分类号： B01D53/52 , B01D53/86 , B01J27/224 , B01J32/00 , B01J37/20 , C01B17/04
CPC分类号： B01D53/8612 , B01J27/224 , B01J37/20 , C01B17/0465 , Y10S502/517
摘要： A process for catalytically oxidizing the H.sub.2 S present at low concentration in a gas to sulphur wherein the gas together with a gas containing free oxygen in a quantity to provide and O.sub.2 to H.sub.2 S mole ratio ranging from 0.05 to 10 are contacted with a catalyst for selectively oxidizing H.sub.2 S to sulphur, the catalyst comprising a support based on silicon carbide associated with a catalytic active phase containing at least one transition metal such as Fe, Ni, Cr, Co, Cu, Ag, Mn, Mo, Ti, W or V, in a form of a metal compound and/or in the elemental state. Prior to treating the gas, the oxidation catalyst is subjected to an activation treatment which loads the active phase of the catalyst to provide maximum sulphurization of the metal of the catalyst. In an alternate embodiment, the oxidation of the H.sub.2 S is performed below the dew point of the sulphur. In another embodiment, the oxidation is performed at a temperature above the dew point of sulphur and in particular between 200.degree. C. and 500.degree. C. Also disclosed is a catalyst for selectively oxidizing H.sub.2 S to sulphur which comprises a catalytically active phase based on at least one transition metal such as indicated above in combination with a silicon carbide support.
摘要翻译： PCT No.PCT / FR95 / 01524 Sec。 371日期：1997年11月19日 102（e）日期1997年11月19日PCT 1995年11月20日PCT PCT。公开号WO97 / 19019 日期1997年5月29日一种催化氧化气体中硫浓度低的H 2 S的方法，其中气体与含有游离氧气的气体一起提供，O 2与H 2 S摩尔比为0.05至10，与用于选择性地将H 2 S氧化成硫的催化剂，所述催化剂包括与包含至少一种过渡金属如Fe，Ni，Cr，Co，Cu，Ag，Mn，Mo，Ti，W的催化活性相相关的碳化硅的载体或V，以金属化合物的形式和/或元素状态。在处理气体之前，将氧化催化剂进行活化处理，负载催化剂的活性相以提供催化剂金属的最大硫化。在另一个实施方案中，H2S的氧化在硫的露点之下进行。在另一个实施方案中，氧化在高于硫的露点，特别是在200℃和500℃之间的温度下进行。还公开了一种用于选择性地将H 2 S氧化成硫的催化剂，其包含基于至少一种过渡金属，如上所述与碳化硅载体组合。

7. 发明授权

US06372193B1 Process for oxidizing the H2S contained at low concentration in a gas directly to sulphur by catalytic means and in the vapour pause 有权
标题翻译：将气体中低浓度的H 2 S通过催化装置直接氧化成硫的方法，并且在蒸气暂停中进行氧化
公开(公告)号：US06372193B1
公开(公告)日：2002-04-16
申请号：US09578148
申请日：2000-05-24
申请人： Marc Ledoux , Jean Nougayrede , Cuong Pham-Huu , Nicolas Keller , Sabine Savin-Poncet , Claude Crouzet
发明人： Marc Ledoux , Jean Nougayrede , Cuong Pham-Huu , Nicolas Keller , Sabine Savin-Poncet , Claude Crouzet
IPC分类号： C01B1704
CPC分类号： B01J27/047 , B01D53/8612 , B01J27/043 , B01J27/224 , C01B17/0465 , Y10S502/514
摘要： A process for catalytically oxidizing H2S contained in a gas directly to sulphur containing the following steps: combining the H2S-containing gas with a gas containing free oxygen in an amount to produce an oxygen-enriched H2S-containing gas having O2/H2S molar ratio ranging from about 0.05 to about 15; and contacting the oxygen-enriched H2S-containing gas with a catalyst for selective oxidation of H2S to sulphur, wherein the catalyst includes a catalytically active phase combined with a silicon carbide-based support and wherein the active phase of the catalyst consists of at least one oxysulphide of at least one metal selected from the group consisting of iron, copper, nickel, cobalt, chromium, molybdenum and tungsten, at a temperature above the dew point of sulphur formed during H2S oxidation.
摘要翻译：将包含在气体中的H 2 S直接催化氧化成硫的方法，其包括以下步骤：将含H 2 S的气体与含有游离氧气的气体组合，以产生具有O 2 / H 2 S摩尔比范围的富氧H 2 S的气体约0.05至约15; 以及使所述含氧富H2S气体与用于将硫化氢选择性氧化成硫的催化剂接触，其中所述催化剂包括与碳化硅基载体结合的催化活性相，并且其中所述催化剂的活性相由至少一种在高于硫化氢氧化期间形成的硫的露点的温度下，选自铁，铜，镍，钴，铬，钼和钨中的至少一种金属的硫代硫化物。

8. 发明申请

US20080075627A1 Inactivating Biological Agents Dispersed In Gaseous Medium With A Photoactivated Semiconductor 审中-公开
标题翻译：用光活化半导体灭活分散在气态介质中的生物试剂
公开(公告)号：US20080075627A1
公开(公告)日：2008-03-27
申请号：US11792561
申请日：2005-12-07
申请人： Francois Garin , Nicolas Keller , Marie-Claire Lett , Valerie Keller-Spitzer , Marc Ledoux
发明人： Francois Garin , Nicolas Keller , Marie-Claire Lett , Valerie Keller-Spitzer , Marc Ledoux
IPC分类号： A61L9/18 , B01J19/12
CPC分类号： A61L9/18 , A61L9/205
摘要： A method for inactivating biological agents dispersed within a gaseous medium includes a step which consists in treating the gas flow with a photoactivated semiconductor, in particular with photoactivated titanium oxide. The invention also concerns a device for implementing the method, as well as the method for decontaminating gaseous medium containing harmful, toxic or pathogenic biological agents, such as bacteria.
摘要翻译：分散在气体介质中的生物试剂灭活方法包括一个步骤，其中包括用光活化的半导体处理气流，特别是用光活化的氧化钛。本发明还涉及一种用于实施该方法的装置，以及用于净化含有有害，有毒或致病性生物制剂如细菌的气态介质的方法。

9. 发明授权

US06235259B1 Method and catalyst for direct sulphur oxidation of H2S contained in a gas 有权
标题翻译：用于气体中所含的H2S的直接硫氧化的方法和催化剂
公开(公告)号：US06235259B1
公开(公告)日：2001-05-22
申请号：US09383153
申请日：1999-08-25
申请人： Marc Ledoux , Nougayrede Jean , Savin-Poncet Sabine , Pham Huu Cuong , Keller Nicolas , Crouzet Claude
发明人： Marc Ledoux , Nougayrede Jean , Savin-Poncet Sabine , Pham Huu Cuong , Keller Nicolas , Crouzet Claude
IPC分类号： B01D5352
CPC分类号： C01B17/0465 , B01D53/8615 , B01J27/04 , B01J27/30 , B01J38/04 , C01B17/0469 , Y02P20/584
摘要： A regenerative process for oxidizing H2S contained in low concentration in a gas directly to sulphur including combining the H2S-containing gas with a gas containing free oxygen in an amount to form an O2/H2S-containing gas with an O2/H2S molar ratio ranging from 0.05 to 15; contacting the O2/H2S-containing gas with a catalyst for the selective oxidation of H2S to sulphur, wherein the catalyst includes a catalytically active phase containing at least one oxysulphide of at least one metal selected from the group consisting of nickel, iron, cobalt, copper, chromium, molybdenum and tungsten combined with a silicon carbide support and including a compound of at least one transition metal, at temperatures below the dew point of the sulphur formed by oxidation of H2S and depositing the sulphur on the catalyst; periodically regenerating by flushing the sulphur-laden catalyst using a non-oxidizing gas at temperatures of between 200° C. and 500° C. to vaporize sulphur retained on the catalyst; and cooling the regenerated catalyst below the dew point of the sulphur to a temperature for H2S oxidation to be carried out again, such cooling being carried out by a gas having a temperature less than 180° C.
摘要翻译：将气体中低浓度的H 2 S直接氧化为硫的再生方法，包括将含H 2 S的气体与含有游离氧气的气体组合，形成含有O 2 / H 2 S的气体，其中O 2 / H 2 S摩尔比范围为 0.05〜15; 使含有O 2 / H 2 S的气体与用于选择性氧化H 2 S至硫的催化剂接触，其中所述催化剂包括催化活性相，其含有至少一种选自镍，铁，钴，铜，铬，钼和钨与碳化硅载体组合并且包括至少一种过渡金属的化合物，在低于通过硫化H 2 S形成的硫的露点的温度和在催化剂上沉积硫; 通过在200℃和500℃之间的温度下使用非氧化气体冲洗载有硫的催化剂来周期性地再生以蒸发保留在催化剂上的硫; 并将再生催化剂冷却至低于硫的露点以再次进行H 2 S氧化的温度，这样的冷却是通过温度低于180℃的气体进行的。

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