专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5553262A Memory apparatus and method capable of setting attribute of information to be cached 失效
标题翻译：能够设置要缓存的信息的属性的存储装置和方法
公开(公告)号：US5553262A
公开(公告)日：1996-09-03
申请号：US231963
申请日：1994-04-22
申请人： Itsuko Ishida , Masayuki Hata , Tatsuo Yamada
发明人： Itsuko Ishida , Masayuki Hata , Tatsuo Yamada
IPC分类号： G06F12/08 , G06F12/12
CPC分类号： G06F12/0848 , G06F12/0846 , G06F12/0864 , G06F12/0842 , G06F12/127 , G06F2212/601
摘要： A cache memory apparatus allocates memory regions on the basis of information attributes. The required memory region corresponding to the attribute is accessed before caching is implemented. This enables considerable reduction in apparatus that would otherwise be required to be duplicated among different chips corresponding to the number of information attributes. In a multiple data processing implementation, cache memory regions are allocated for each data processor. The required memory regions of the cache memory are accessed in accordance with information specifying the data processor before caching is carried out. To avoid data collision when the main memory data is substantially rewritten, and when data having the same address and different access types exist simultaneously, data representing the type of access is stored. In response to a change in access, all data signals stored in each ways is nullified so that a plurality of data stored in the memory regions is not simultaneously output.
摘要翻译：高速缓存存储装置根据信息属性分配存储区域。在实现缓存之前访问对应于该属性的所需存储区域。这使得能够显着地减少否则将需要在对应于信息属性的数量的不同芯片之间复制的装置。在多重数据处理实现中，为每个数据处理器分配高速缓冲存储器区域。根据在执行缓存之前指定数据处理器的信息来访问高速缓冲存储器的所需存储区域。为了在主存储器数据被重写时避免数据冲突，并且当具有相同地址和不同访问类型的数据同时存在时，存储表示访问类型的数据。响应于访问的变化，以各种方式存储的所有数据信号无效，使得存储在存储器区域中的多个数据不被同时输出。

2. 发明授权

US5142671A Plural cache architecture for real time multitasking 失效
标题翻译：多重缓存结构，用于实时多任务处理
公开(公告)号：US5142671A
公开(公告)日：1992-08-25
申请号：US434046
申请日：1989-11-09
申请人： Itsuko Ishida , Masayuki Hata , Akira Yamada
发明人： Itsuko Ishida , Masayuki Hata , Akira Yamada
IPC分类号： G06F12/08 , G06F13/36
CPC分类号： G06F12/0842 , G06F12/0811
摘要： In a data processor, when there is any cache memory not being activated after the whole data processor has been activated, a signal is delivered to a bus driver and then a data processing unit is connected to a system bus. During the period from when the whole data processor has been activated to when all the cache memories start to be activated, the data processing unit is connected to the system bus so that data can be transmitted/received between the data processing unit and peripheral devices.
摘要翻译：在数据处理器中，当在整个数据处理器被激活之后没有激活任何高速缓存存储器时，将信号传送到总线驱动器，然后将数据处理单元连接到系统总线。在从整个数据处理器被激活到所有高速缓冲存储器开始被激活的时间段期间，数据处理单元连接到系统总线，以便可以在数据处理单元和外围设备之间发送/接收数据。

3. 发明授权

US5535359A Computer system with cache memory having address mask register 失效
标题翻译：具有缓存存储器的计算机系统具有地址掩码寄存器
公开(公告)号：US5535359A
公开(公告)日：1996-07-09
申请号：US387980
申请日：1995-02-13
申请人： Masayuki Hata , Hiromasa Nakagawa , Tatsuo Yamada
发明人： Masayuki Hata , Hiromasa Nakagawa , Tatsuo Yamada
IPC分类号： G06F12/08
CPC分类号： G06F12/0864 , G06F12/0848 , G06F12/0888
摘要： A computer system is provided with a plurality of cache memories. Each cache memory stores data corresponding to part of main memory address space without overlapping with each other, thereby enabling capacity of the cache memory to be increased with ease. An address mask register is used to allocate the portion of main memory address space stored in each cache.
摘要翻译：计算机系统设置有多个高速缓存存储器。每个高速缓冲存储器存储与主存储器地址空间的一部分相对应的数据，而不会彼此重叠，从而容易地增加高速缓冲存储器的容量。地址掩码寄存器用于分配存储在每个高速缓存中的主存储器地址空间的一部分。

4. 发明授权

US08750343B2 Nitride-based semiconductor light-emitting device, nitride-based semiconductor laser device, nitride-based semiconductor light-emitting diode, method of manufacturing the same, and method of forming nitride-based semiconductor layer 有权
标题翻译：基于氮化物的半导体发光器件，氮化物基半导体激光器件，氮化物基半导体发光二极管，其制造方法以及形成氮化物基半导体层的方法
公开(公告)号：US08750343B2
公开(公告)日：2014-06-10
申请号：US12680412
申请日：2008-09-25
申请人： Ryoji Hiroyama , Yasuto Miyake , Yasumitsu Kuno , Yasuyuki Bessho , Masayuki Hata
发明人： Ryoji Hiroyama , Yasuto Miyake , Yasumitsu Kuno , Yasuyuki Bessho , Masayuki Hata
IPC分类号： H01S5/22 , H01S5/323 , H01S5/40
CPC分类号： H01S5/18 , B82Y20/00 , H01L33/16 , H01L33/20 , H01L33/32 , H01S5/0202 , H01S5/0207 , H01S5/02208 , H01S5/0224 , H01S5/02252 , H01S5/02292 , H01S5/028 , H01S5/0282 , H01S5/0683 , H01S5/1085 , H01S5/22 , H01S5/3202 , H01S5/34333 , H01S5/42
摘要： A nitride-based semiconductor light-emitting device capable of suppressing complication of a manufacturing process and reduction of luminous efficiency is obtained. This nitride-based semiconductor light-emitting device (50) includes a nitride-based semiconductor device layer (23) formed on a main surface of a (1-100) plane of a substrate (21), having a light-emitting layer (26) having a main surface of a (1-100) plane, a facet (50a) formed on an end of a region including the light-emitting layer (26) of the nitride-based semiconductor device layer (23), formed by a (000-1) plane extending in a direction substantially perpendicular to the main surface ((1-100) plane) of the light-emitting layer (26), and a reflection surface (50c) formed on a region opposed to the facet (50a) of the (000-1) plane, formed by a growth surface of the nitride-based semiconductor device layer (23), extending in a direction inclined at an angle θ1 (about) 62° with respect to the facet (50a).
摘要翻译：可以获得能够抑制制造工序的复杂化和发光效率降低的氮化物系半导体发光装置。该氮化物系半导体发光元件（50）具有形成在基板（（1）的（1-100）面的主面上的氮化物系半导体器件层，具有发光层 26），具有（1-100）面的主表面的小面（50a），形成在包括氮化物类半导体器件层（23）的发光层（26）的区域的一端的端部，由（（1-100）面）的方向延伸的（000-1）面，以及形成在与该面相对的区域上的反射面（50c）由所述氮化物基半导体器件层（23）的生长表面形成的所述（000-1）面的（50a），所述生长表面沿着相对于所述刻面以角度θ倾斜的方向（大约）62°延伸; （50a）。

5. 发明申请

US20140043569A1 DISPLAY DEVICE 有权
标题翻译：显示设备
公开(公告)号：US20140043569A1
公开(公告)日：2014-02-13
申请号：US14113062
申请日：2012-04-13
申请人： Kohji Yabuta , Tomotoshi Tsujioka , Kosuke Nagata , Mikihiro Noma , Masayuki Hata , Kiyoshi Inada , Hideaki Takizawa , Masahiro Kihara
发明人： Kohji Yabuta , Tomotoshi Tsujioka , Kosuke Nagata , Mikihiro Noma , Masayuki Hata , Kiyoshi Inada , Hideaki Takizawa , Masahiro Kihara
IPC分类号： G02F1/1335
CPC分类号： G02F1/133509 , G02B5/008 , G02B27/2214 , G02F1/13338 , G02F1/133512 , G02F1/1345 , G02F1/1347 , G02F2001/133354 , G02F2001/133388 , G02F2201/44 , G02F2202/28 , G06F3/041 , H04N13/31
摘要： A liquid crystal display device includes a liquid crystal display panel, a functional panel, a photo curable adhesive, a transparent electrode, and a light blocking line. The liquid crystal panel includes a display area to display an image and a non-display area surrounding the display area. The functional panel is attached to the liquid crystal panel, and includes a display overlapping area overlapping with the display area and a display non-overlapping area overlapping with the non-display area in a plan view. The photo curable adhesive is arranged between the panels and cured by light applied thereto. The transparent electrode is arranged in the display overlapping area and made of light transmissive conductive material. The light blocking line is arranged in the display non-overlapping area and made of light shielding metal material. The light blocking line partially has a light-transmission cutout that is configured to allow the light to pass therethrough.
摘要翻译：液晶显示装置包括液晶显示面板，功能面板，光固化粘合剂，透明电极和遮光线。液晶面板包括显示图像的显示区域和围绕显示区域的非显示区域。功能面板附接到液晶面板，并且在平面图中包括与显示区域重叠的显示器重叠区域和与非显示区域重叠的显示器非重叠区域。光固化粘合剂布置在面板之间并通过施加于其上的光固化。透明电极布置在显示器重叠区域中并由透光导电材料制成。遮光线布置在显示器非重叠区域中，由遮光金属材料制成。遮光线部分地具有被配置为允许光通过的光透射切口。

6. 发明申请

US20120299052A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND OPTICAL DEVICE 审中-公开
标题翻译：半导体发光器件，制造半导体发光器件的方法和光学器件
公开(公告)号：US20120299052A1
公开(公告)日：2012-11-29
申请号：US13576954
申请日：2011-02-04
申请人： Nobuhiko Hayashi , Masayuki Hata
发明人： Nobuhiko Hayashi , Masayuki Hata
IPC分类号： H01L33/48
CPC分类号： H01S5/02204 , G11B7/127 , H01L23/26 , H01L2224/48091 , H01L2924/12044 , H01L2924/19107 , H01S5/02212 , H01S5/0222 , H01S5/02244 , H01S5/02296 , H01L2924/00014
摘要： A semiconductor light-emitting device capable of inhibiting a semiconductor light-emitting element from deterioration and capable of inhibiting the size of a package from enlargement is obtained. The semiconductor light-emitting device includes a semiconductor light-emitting element and a package sealing the semiconductor light-emitting element. The package includes a base portion mounted with the semiconductor light-emitting element and a cap portion mounted on the base portion for covering the semiconductor light-emitting element. At least either one of the base portion and the cap portion is made of a mixture of resin and a gas absorbent.
摘要翻译：可以获得能够抑制半导体发光元件劣化并且能够抑制封装尺寸放大的半导体发光器件。半导体发光器件包括半导体发光元件和密封半导体发光元件的封装。封装包括安装有半导体发光元件的基座部分和安装在基座部分上用于覆盖半导体发光元件的盖部分。底座部分和盖部分中的至少一个由树脂和气体吸收剂的混合物制成。

7. 发明申请

US20120249484A1 COORDINATE SENSOR AND DISPLAY DEVICE 有权
标题翻译：协调传感器和显示设备
公开(公告)号：US20120249484A1
公开(公告)日：2012-10-04
申请号：US13515296
申请日：2010-10-26
申请人： Masayuki Hata , Toshiaki Nakagawa , Toshiyuki Yoshimizu
发明人： Masayuki Hata , Toshiaki Nakagawa , Toshiyuki Yoshimizu
IPC分类号： G06F3/042
CPC分类号： G06F3/0421 , G02F1/13338
摘要： A coordinate sensor of the present invention includes light emitting diodes (10) and line sensors (13) each including light receiving elements (13s), and further includes, between the light emitting diodes (10) and the light receiving elements (13s), wavelength selective reflection mirrors (11) for allowing light emitted from the light emitting diodes (10) to be selectively incident to the light receiving elements (13s).
摘要翻译：本发明的坐标传感器包括各自包括光接收元件（13s）的发光二极管（10）和线传感器（13），并且还包括在发光二极管（10）和光接收元件（13）之间，用于允许从发光二极管（10）发射的光选择性地入射到光接收元件（13）的波长选择反射镜（11）。

8. 发明授权

US08121163B2 Semiconductor laser diode apparatus and method of fabricating the same 失效
标题翻译：半导体激光二极管装置及其制造方法
公开(公告)号：US08121163B2
公开(公告)日：2012-02-21
申请号：US12047924
申请日：2008-03-13
申请人： Saburo Nakashima , Yasuhiko Nomura , Masayuki Hata , Takenori Goto
发明人： Saburo Nakashima , Yasuhiko Nomura , Masayuki Hata , Takenori Goto
IPC分类号： H01S3/04 , H01S5/00
CPC分类号： H01S5/0207 , H01L2224/45144 , H01L2224/48091 , H01L2224/73265 , H01S5/0224 , H01S5/02272 , H01S5/02276 , H01S5/22 , H01S5/3201 , H01S5/32341 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor laser diode apparatus capable of suppressing variation in an emission position and an emission direction of a laser beam emitted from a semiconductor laser diode element is obtained. This semiconductor laser diode apparatus includes a semiconductor laser diode element having warping along either a first direction in which a cavity extends or a second direction intersecting with the first direction and a base on which a convex side of the warping of the semiconductor laser diode element is fixed, wherein a distance between a first end of the semiconductor laser diode element in a direction of larger warping among the first and second directions and the base is smaller than a distance between a second end of the semiconductor laser diode element in the direction of the large warping among the first and second directions and the base.
摘要翻译：获得能够抑制从半导体激光二极管元件发射的激光束的发射位置和发射方向的变化的半导体激光二极管装置。该半导体激光二极管装置包括：半导体激光二极管元件，其具有沿着与第一方向相交的第一方向或与第一方向交叉的第二方向的翘曲;以及半导体激光二极管元件的翘曲的凸侧固定，其中所述半导体激光二极管元件的第一端之间沿所述第一和第二方向之间的较大翘曲的方向与所述基座之间的距离小于所述半导体激光二极管元件的第二端之间的距离，第一和第二个方向和基地之间大的扭曲。

9. 发明授权

US08085825B2 Method of fabricating semiconductor laser diode apparatus and semiconductor laser diode apparatus 失效
标题翻译：制造半导体激光二极管装置和半导体激光二极管装置的方法
公开(公告)号：US08085825B2
公开(公告)日：2011-12-27
申请号：US12043724
申请日：2008-03-06
申请人： Masayuki Hata , Yasumitsu Kunoh , Yasuyuki Bessho
发明人： Masayuki Hata , Yasumitsu Kunoh , Yasuyuki Bessho
IPC分类号： H01S3/04 , H01S5/00
CPC分类号： H01S5/0216 , H01L2224/48247 , H01S5/0201 , H01S5/0217 , H01S5/0224 , H01S5/0425 , H01S5/22 , H01S5/32341 , H01S5/4031 , H01S5/4087 , H01S2304/04
摘要： A semiconductor laser diode apparatus capable of suppressing difficulty in handling of the semiconductor laser diode also when the width of a semiconductor laser diode portion is small is obtained. This method of fabricating a semiconductor laser diode apparatus includes steps of forming a plurality of first semiconductor laser diode portions on a first substrate at a prescribed interval in a second direction intersecting with a first direction in which cavities extend, bonding one or some of the plurality of first semiconductor laser diode portions to a second substrate, separating the one or some of the plurality of first semiconductor laser diode portions bonded to the second substrate from the first substrate; and dividing the second substrate along the second direction.
摘要翻译：获得了当半导体激光二极管部分的宽度小时也能够抑制半导体激光二极管处理困难的半导体激光二极管装置。这种制造半导体激光二极管装置的方法包括以下步骤：在与第一方向交叉的第二方向上以规定的间隔在第一基板上形成多个第一半导体激光二极管部分，其中第一方向与空腔延伸，将多个第一半导体激光二极管部分的第一半导体激光二极管部分分配到第二基板，将与第二基板接合的多个第一半导体激光二极管部分中的一个或一些与第一基板分离; 以及沿着所述第二方向分割所述第二基板。

10. 发明授权

US08064492B2 Method of manufacturing semiconductor laser device, semiconductor laser device and light apparatus 失效
标题翻译：制造半导体激光装置的方法，半导体激光装置及照明装置
公开(公告)号：US08064492B2
公开(公告)日：2011-11-22
申请号：US12693169
申请日：2010-01-25
申请人： Yasuyuki Bessho , Hiroki Ohbo , Kunio Takeuchi , Seiichi Tokunaga , Yasumitsu Kunoh , Masayuki Hata
发明人： Yasuyuki Bessho , Hiroki Ohbo , Kunio Takeuchi , Seiichi Tokunaga , Yasumitsu Kunoh , Masayuki Hata
IPC分类号： H01S5/00
CPC分类号： H01S5/4043 , B82Y20/00 , G11B7/1275 , G11B7/22 , H01L2224/16145 , H01L2224/48091 , H01L2224/73257 , H01L2224/73265 , H01S5/0202 , H01S5/02212 , H01S5/0224 , H01S5/02272 , H01S5/02276 , H01S5/028 , H01S5/0425 , H01S5/22 , H01S5/2214 , H01S5/34333 , H01S5/4087 , H04N9/3161 , H01L2924/00014
摘要： A method of manufacturing a semiconductor laser device comprises steps of forming a first semiconductor laser device substrate having first grooves for cleavage on a surface thereof, bonding a second semiconductor laser device substrate onto the surface side having the first grooves and thereafter cleaving the first and second semiconductor laser device substrates along at least the first grooves.
摘要翻译：一种制造半导体激光器件的方法包括以下步骤：形成第一半导体激光器件衬底，其具有用于在其表面上切割的第一凹槽，将第二半导体激光器件衬底接合到具有第一沟槽的表面侧上，然后切割第一和第二沿着至少第一凹槽的半导体激光器件衬底。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式