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    • 1. 发明授权
    • Method of manufacturing solid-state image sensing device
    • 制造固态摄像装置的方法
    • US07348133B2
    • 2008-03-25
    • US10911649
    • 2004-08-05
    • Isamu TomizawaSeiji KaiKouji Yagi
    • Isamu TomizawaSeiji KaiKouji Yagi
    • G03F7/00
    • H01L27/14685
    • The invention provides a manufacturing method of a solid-state image sensing device where light-receiving sensitivity is improved. The manufacturing method of the solid-state image sensing device of the invention has forming an insulating film on a light-receiving region and a non-light-receiving region, forming a mask pattern for forming a lens on the insulating film on the light-receiving region and a dummy mask pattern for forming a lens on the insulating film on the non-light-receiving region, forming a plurality of convex portions on the insulating film by etching the insulating film by using the mask pattern and the dummy mask pattern as a mask, forming a first lens film on the insulating film, forming a planarizing film having a lower etching rate than the first lens film on the first lens film, etching back the first lens film and the planarizing film, and forming a second lens film on the first lens film.
    • 本发明提供了一种提高了光接收灵敏度的固态摄像装置的制造方法。 本发明的固态摄像装置的制造方法在受光区域和非受光区域上形成绝缘膜,在发光元件的绝缘膜上形成用于形成透镜的掩模图案, 接收区域和用于在非光接收区域上的绝缘膜上形成透镜的哑掩模图案,通过使用掩模图案和伪掩模图案通过蚀刻绝缘膜在绝缘膜上形成多个凸部,作为 掩模,在绝缘膜上形成第一透镜膜,形成具有比第一透镜膜上的第一透镜膜蚀刻率低的平坦化膜,对第一透镜膜和平坦化膜进行回蚀,形成第二透镜膜 在第一张镜片上。
    • 2. 发明申请
    • Method of manufacturing solid-state image sensing device
    • 制造固态摄像装置的方法
    • US20050042550A1
    • 2005-02-24
    • US10911649
    • 2004-08-05
    • Isamu TomizawaSeiji KaiKouji Yagi
    • Isamu TomizawaSeiji KaiKouji Yagi
    • H01L27/14G03F7/00H01L27/148
    • H01L27/14685
    • The invention provides a manufacturing method of a solid-state image sensing device where light-receiving sensitivity is improved. The manufacturing method of the solid-state image sensing device of the invention has forming an insulating film on a light-receiving region and a non-light-receiving region, forming a mask pattern for forming a lens on the insulating film on the light-receiving region and a dummy mask pattern for forming a lens on the insulating film on the non-light-receiving region, forming a plurality of convex portions on the insulating film by etching the insulating film by using the mask pattern and the dummy mask pattern as a mask, forming a first lens film on the insulating film, forming a planarizing film having a lower etching rate than the first lens film on the first lens film, etching back the first lens film and the planarizing film, and forming a second lens film on the first lens film.
    • 本发明提供了一种提高了光接收灵敏度的固态摄像装置的制造方法。 本发明的固态摄像装置的制造方法在受光区域和非受光区域上形成绝缘膜,在发光元件的绝缘膜上形成用于形成透镜的掩模图案, 接收区域和用于在非光接收区域上的绝缘膜上形成透镜的哑掩模图案,通过使用掩模图案和伪掩模图案通过蚀刻绝缘膜在绝缘膜上形成多个凸部,作为 掩模,在绝缘膜上形成第一透镜膜,形成与第一透镜膜上的第一透镜膜相比蚀刻速率低的平坦化膜,对第一透镜膜和平坦化膜进行回蚀,形成第二透镜膜 在第一张镜片上。
    • 3. 发明申请
    • Integrated circuit and method for manufacturing the same
    • 集成电路及其制造方法
    • US20070075382A1
    • 2007-04-05
    • US11527572
    • 2006-09-27
    • Keiichi YamaguchiSeiji Kai
    • Keiichi YamaguchiSeiji Kai
    • H01L29/76H01L29/94H01L31/00H01L21/336
    • H01L27/14685H01L27/14627
    • An integrated circuit is provided, and in the integrated circuit, a microlens array is formed with a silicon nitride film which provides an interlayer insulation film for Al wiring, so that any stress migration in the Al wiring and any deformation of lens shape can be prevented. A silicon nitride film is formed on a semiconductor substrate as an interlayer insulation film between a first-layer wiring and a second-layer wiring. The silicon nitride film includes, in an image pickup section, a lens array having a plurality of convex lenses which are formed with a surface of the silicon nitride film. A silicon dioxide film is grown on the silicon nitride film. Then, a second Al film is formed on the silicon dioxide film. The Al film is etched in an unnecessary portion such as the surfaces of the lens array, to form wiring.
    • 提供集成电路,并且在集成电路中,利用提供Al布线的层间绝缘膜的氮化硅膜形成微透镜阵列,从而可以防止Al布线中的任何应力迁移和透镜形状的任何变形 。 在半导体衬底上形成氮化硅膜作为第一层布线和第二层布线之间的层间绝缘膜。 氮化硅膜在图像拾取部分中包括具有形成有氮化硅膜表面的多个凸透镜的透镜阵列。 在氮化硅膜上生长二氧化硅膜。 然后,在二氧化硅膜上形成第二Al膜。 在不需要的部分(例如透镜阵列的表面)上蚀刻Al膜,以形成布线。
    • 8. 发明授权
    • Semiconductor device for use in a solid state imaging device
    • 用于固态成像装置的半导体装置
    • US07138670B2
    • 2006-11-21
    • US11040236
    • 2005-01-21
    • Tetsuya MiwaTsutomu ImaiSeiji KaiTakayuki Kaida
    • Tetsuya MiwaTsutomu ImaiSeiji KaiTakayuki Kaida
    • H01L29/76H01L27/148
    • H01L27/14658H01L21/76838H01L27/14603H01L27/148
    • A compact semiconductor device having a contact hole that improves stability of electric connection between a wire and an electrode. The semiconductor device includes an insulation layer formed on a semiconductor substrate, first electrodes formed on the insulation layer and spaced from one another by an interval, an insulation film covering the first electrodes, and spaced second electrodes formed on the insulation film. Each second electrode includes an intermediate portion filling the space between two adjacent first electrodes, two edge portions respectively laid above the two adjacent first electrodes in an overlapping manner, and an upper surface connected to a wire by a contact. Thickness, t1, of the insulation film, thickness, t2, of each edge portion of the second electrode, and interval, S, between the first electrodes are adjusted to satisfy the expression of S
    • 一种紧凑的半导体器件,其具有提高线和电极之间的电连接的稳定性的接触孔。 半导体器件包括形成在半导体衬底上的绝缘层,形成在绝缘层上并间隔一定距离的第一电极,覆盖第一电极的绝缘膜以及形成在绝缘膜上的间隔开的第二电极。 每个第二电极包括填充两个相邻的第一电极之间的空间的中间部分,以重叠的方式分别铺设在两个相邻的第一电极之上的两个边缘部分,以及通过接触连接到电线的上表面。 调整绝缘膜的厚度t 1,第二电极的每个边缘部分的厚度t 2和第一电极之间的间隔S满足S <(2t 1 + 2t 2)的表达式。
    • 10. 发明授权
    • Optical fiber collimator
    • 光纤准直仪
    • US06785441B2
    • 2004-08-31
    • US10025986
    • 2001-12-26
    • Ikuto OoyamaTakashi FukuzawaSeiji Kai
    • Ikuto OoyamaTakashi FukuzawaSeiji Kai
    • G02B632
    • G02B6/327G02B6/32
    • An optical fiber collimator having a lens (10), and an optical fiber chip (14) disposed at a distance from the lens, the optical fiber chip holding an end portion of an optical fiber (12) and having an end surface treated to be inclined. The optical axis of the optical fiber is made eccentric with respect to the center of the lens to set the eccentric quantity of the optical fiber so that the center of the lens substantially coincides with the center of a light beam incident on the lens. The kind of the lens is optional. The lens may be an inexpensive spherical lens or may be a gradient index rod lens. When a gradient index rod lens is used, a lens in which a surface facing to the optical fiber chip is treated to be inclined is used as the gradient index rod lens.
    • 具有透镜(10)的光纤准直仪和与透镜隔开一定距离设置的光纤芯片(14),所述光纤芯片保持光纤(12)的端部,并将端面处理为 倾向 光纤的光轴相对于透镜的中心偏心,以设定光纤的偏心量,使得透镜的中心基本上与入射到透镜上的光束的中心重合。 透镜的种类是可选的。 透镜可以是廉价的球面透镜,或者可以是梯度折射率棒状透镜。 当使用梯度折射率棒状透镜时,使用其中面向光纤芯片的表面被处理为倾斜的透镜作为渐变折射率棒状透镜。