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1. 发明授权

US07459327B2 Method for manufacturing micro lenses including underlayer film and lens film etching steps 有权
标题翻译：用于制造包括下层膜和透镜膜蚀刻步骤的微透镜的方法
公开(公告)号：US07459327B2
公开(公告)日：2008-12-02
申请号：US10533030
申请日：2004-04-16
申请人： Seiji Kai , Ryouji Matsui , Tetsuya Yamada , Tsutomu Imai , Kazuyuki Takegawa
发明人： Seiji Kai , Ryouji Matsui , Tetsuya Yamada , Tsutomu Imai , Kazuyuki Takegawa
IPC分类号： H01L21/00 , H01L31/062
CPC分类号： H01L27/14643 , H01L27/14625 , H01L27/14627 , H01L27/1463 , H01L27/14685 , H01L27/14687 , H01L27/148
摘要： A solid-state imager is disclosed wherein isolation regions (4) are covered with power supply lines (8), a light-transmitting lens film (24) whose surface forms continuous convex portions above the isolation regions (4) convex towards channel regions (5) is provided, and a light-transmitting material having a refractive index lower than that of the lens film (24) is provided over the lens film (24).
摘要翻译：公开了一种固态成像器，其中隔离区域（4）被电源线（8）覆盖，透光透镜膜（24）的表面形成在隔离区域（4）上方的连续凸部， 5），并且在透镜膜（24）上设置折射率低于透镜膜（24）的透光性材料。

2. 发明授权

US5949106A FET input/output pad layout 失效
标题翻译： FET输入/输出焊盘布局
公开(公告)号：US5949106A
公开(公告)日：1999-09-07
申请号：US887905
申请日：1997-07-08
申请人： Seiji Kai , Yoshihiro Yamamoto , Masaaki Itoh , Koutarou Tanaka
发明人： Seiji Kai , Yoshihiro Yamamoto , Masaaki Itoh , Koutarou Tanaka
IPC分类号： H01L23/48 , H01L21/338 , H01L23/50 , H01L29/417 , H01L29/423 , H01L29/812 , H01L29/78
CPC分类号： H01L23/50 , H01L29/41725 , H01L29/41741 , H01L29/41758 , H01L29/42312 , H01L2924/0002
摘要： A power FET for which it is difficult to generate oscillations dependent on the interval between adjacent pads. The power FET has a plurality of pads for first terminals, which are disposed on one side of a chip at unequal intervals, and a plurality of pads for second terminals, which are placed on the other side of the chip. Alternatively, or in addition, the plurality of pads for the second terminals may also be disposed at unequal intervals.
摘要翻译：功率FET，其难以产生取决于相邻焊盘之间的间隔的振荡。功率FET具有用于第一端子的多个焊盘，其以不等间隔设置在芯片的一侧，以及放置在芯片的另一侧上的多个用于第二端子的焊盘。或者或另外，用于第二端子的多个焊盘也可以以不等间隔设置。

3. 发明授权

US07348133B2 Method of manufacturing solid-state image sensing device 有权
标题翻译：制造固态摄像装置的方法
公开(公告)号：US07348133B2
公开(公告)日：2008-03-25
申请号：US10911649
申请日：2004-08-05
申请人： Isamu Tomizawa , Seiji Kai , Kouji Yagi
发明人： Isamu Tomizawa , Seiji Kai , Kouji Yagi
IPC分类号： G03F7/00
CPC分类号： H01L27/14685
摘要： The invention provides a manufacturing method of a solid-state image sensing device where light-receiving sensitivity is improved. The manufacturing method of the solid-state image sensing device of the invention has forming an insulating film on a light-receiving region and a non-light-receiving region, forming a mask pattern for forming a lens on the insulating film on the light-receiving region and a dummy mask pattern for forming a lens on the insulating film on the non-light-receiving region, forming a plurality of convex portions on the insulating film by etching the insulating film by using the mask pattern and the dummy mask pattern as a mask, forming a first lens film on the insulating film, forming a planarizing film having a lower etching rate than the first lens film on the first lens film, etching back the first lens film and the planarizing film, and forming a second lens film on the first lens film.
摘要翻译：本发明提供了一种提高了光接收灵敏度的固态摄像装置的制造方法。本发明的固态摄像装置的制造方法在受光区域和非受光区域上形成绝缘膜，在发光元件的绝缘膜上形成用于形成透镜的掩模图案，接收区域和用于在非光接收区域上的绝缘膜上形成透镜的哑掩模图案，通过使用掩模图案和伪掩模图案通过蚀刻绝缘膜在绝缘膜上形成多个凸部，作为掩模，在绝缘膜上形成第一透镜膜，形成具有比第一透镜膜上的第一透镜膜蚀刻率低的平坦化膜，对第一透镜膜和平坦化膜进行回蚀，形成第二透镜膜在第一张镜片上。

4. 发明申请

US20050099695A1 Manufacturing method of micro-lens, manufacturing method of solid-state image pickup device and solid-state image pickup device 有权
标题翻译：微透镜的制造方法，固体摄像装置的制造方法以及固体摄像装置
公开(公告)号：US20050099695A1
公开(公告)日：2005-05-12
申请号：US10980332
申请日：2004-11-04
申请人： Kazuyuki Takegawa , Ryoji Matsui , Tetsuya Yamada , Tsutomu Imai , Seiji Kai , Yuko Tanaka
发明人： Kazuyuki Takegawa , Ryoji Matsui , Tetsuya Yamada , Tsutomu Imai , Seiji Kai , Yuko Tanaka
IPC分类号： H01L27/146 , G02B3/00 , H01L27/14 , H01L31/10 , G02B27/10
CPC分类号： H01L27/14685 , G02B3/0012 , G02B3/0056 , H01L27/14627
摘要： The present invention intends to provide a manufacturing method of a heat resistant micro-lens. The manufacturing method includes forming on a substrate an inorganic film having the optical transparency; forming, at positions that are on the inorganic film and correspond to lens formation positions, a resist films; etching a portion where the resist films are not formed of the inorganic film; removing the resist films that remain; and irradiating inert gas ions to the inorganic film from which the resist films are removed and that is patterned according to the etching.
摘要翻译：本发明提供一种耐热微透镜的制造方法。制造方法包括在基板上形成具有光学透明性的无机膜; 在无机膜上并对应于透镜形成位置的位置处形成抗蚀剂膜; 蚀刻抗蚀剂膜不由无机膜形成的部分; 去除保留的抗蚀剂膜; 并且将惰性气体离子照射到除去抗蚀剂膜的无机膜上，并根据蚀刻进行图案化。

5. 发明授权

US06785441B2 Optical fiber collimator 失效
标题翻译：光纤准直仪
公开(公告)号：US06785441B2
公开(公告)日：2004-08-31
申请号：US10025986
申请日：2001-12-26
申请人： Ikuto Ooyama , Takashi Fukuzawa , Seiji Kai
发明人： Ikuto Ooyama , Takashi Fukuzawa , Seiji Kai
IPC分类号： G02B632
CPC分类号： G02B6/327 , G02B6/32
摘要： An optical fiber collimator having a lens (10), and an optical fiber chip (14) disposed at a distance from the lens, the optical fiber chip holding an end portion of an optical fiber (12) and having an end surface treated to be inclined. The optical axis of the optical fiber is made eccentric with respect to the center of the lens to set the eccentric quantity of the optical fiber so that the center of the lens substantially coincides with the center of a light beam incident on the lens. The kind of the lens is optional. The lens may be an inexpensive spherical lens or may be a gradient index rod lens. When a gradient index rod lens is used, a lens in which a surface facing to the optical fiber chip is treated to be inclined is used as the gradient index rod lens.
摘要翻译：具有透镜（10）的光纤准直仪和与透镜隔开一定距离设置的光纤芯片（14），所述光纤芯片保持光纤（12）的端部，并将端面处理为倾向光纤的光轴相对于透镜的中心偏心，以设定光纤的偏心量，使得透镜的中心基本上与入射到透镜上的光束的中心重合。透镜的种类是可选的。透镜可以是廉价的球面透镜，或者可以是梯度折射率棒状透镜。当使用梯度折射率棒状透镜时，使用其中面向光纤芯片的表面被处理为倾斜的透镜作为渐变折射率棒状透镜。

6. 发明授权

US07138670B2 Semiconductor device for use in a solid state imaging device 有权
标题翻译：用于固态成像装置的半导体装置
公开(公告)号：US07138670B2
公开(公告)日：2006-11-21
申请号：US11040236
申请日：2005-01-21
申请人： Tetsuya Miwa , Tsutomu Imai , Seiji Kai , Takayuki Kaida
发明人： Tetsuya Miwa , Tsutomu Imai , Seiji Kai , Takayuki Kaida
IPC分类号： H01L29/76 , H01L27/148
CPC分类号： H01L27/14658 , H01L21/76838 , H01L27/14603 , H01L27/148
摘要： A compact semiconductor device having a contact hole that improves stability of electric connection between a wire and an electrode. The semiconductor device includes an insulation layer formed on a semiconductor substrate, first electrodes formed on the insulation layer and spaced from one another by an interval, an insulation film covering the first electrodes, and spaced second electrodes formed on the insulation film. Each second electrode includes an intermediate portion filling the space between two adjacent first electrodes, two edge portions respectively laid above the two adjacent first electrodes in an overlapping manner, and an upper surface connected to a wire by a contact. Thickness, t1, of the insulation film, thickness, t2, of each edge portion of the second electrode, and interval, S, between the first electrodes are adjusted to satisfy the expression of S
摘要翻译：一种紧凑的半导体器件，其具有提高线和电极之间的电连接的稳定性的接触孔。半导体器件包括形成在半导体衬底上的绝缘层，形成在绝缘层上并间隔一定距离的第一电极，覆盖第一电极的绝缘膜以及形成在绝缘膜上的间隔开的第二电极。每个第二电极包括填充两个相邻的第一电极之间的空间的中间部分，以重叠的方式分别铺设在两个相邻的第一电极之上的两个边缘部分，以及通过接触连接到电线的上表面。调整绝缘膜的厚度t 1，第二电极的每个边缘部分的厚度t 2和第一电极之间的间隔S满足S <（2t 1 + 2t 2）的表达式。

7. 发明申请

US20050042550A1 Method of manufacturing solid-state image sensing device 有权
标题翻译：制造固态摄像装置的方法
公开(公告)号：US20050042550A1
公开(公告)日：2005-02-24
申请号：US10911649
申请日：2004-08-05
申请人： Isamu Tomizawa , Seiji Kai , Kouji Yagi
发明人： Isamu Tomizawa , Seiji Kai , Kouji Yagi
IPC分类号： H01L27/14 , G03F7/00 , H01L27/148
CPC分类号： H01L27/14685
摘要： The invention provides a manufacturing method of a solid-state image sensing device where light-receiving sensitivity is improved. The manufacturing method of the solid-state image sensing device of the invention has forming an insulating film on a light-receiving region and a non-light-receiving region, forming a mask pattern for forming a lens on the insulating film on the light-receiving region and a dummy mask pattern for forming a lens on the insulating film on the non-light-receiving region, forming a plurality of convex portions on the insulating film by etching the insulating film by using the mask pattern and the dummy mask pattern as a mask, forming a first lens film on the insulating film, forming a planarizing film having a lower etching rate than the first lens film on the first lens film, etching back the first lens film and the planarizing film, and forming a second lens film on the first lens film.
摘要翻译：本发明提供了一种提高了光接收灵敏度的固态摄像装置的制造方法。本发明的固态摄像装置的制造方法在受光区域和非受光区域上形成绝缘膜，在发光元件的绝缘膜上形成用于形成透镜的掩模图案，接收区域和用于在非光接收区域上的绝缘膜上形成透镜的哑掩模图案，通过使用掩模图案和伪掩模图案通过蚀刻绝缘膜在绝缘膜上形成多个凸部，作为掩模，在绝缘膜上形成第一透镜膜，形成与第一透镜膜上的第一透镜膜相比蚀刻速率低的平坦化膜，对第一透镜膜和平坦化膜进行回蚀，形成第二透镜膜在第一张镜片上。

8. 发明申请

US20070075382A1 Integrated circuit and method for manufacturing the same 审中-公开
标题翻译：集成电路及其制造方法
公开(公告)号：US20070075382A1
公开(公告)日：2007-04-05
申请号：US11527572
申请日：2006-09-27
申请人： Keiichi Yamaguchi , Seiji Kai
发明人： Keiichi Yamaguchi , Seiji Kai
IPC分类号： H01L29/76 , H01L29/94 , H01L31/00 , H01L21/336
CPC分类号： H01L27/14685 , H01L27/14627
摘要： An integrated circuit is provided, and in the integrated circuit, a microlens array is formed with a silicon nitride film which provides an interlayer insulation film for Al wiring, so that any stress migration in the Al wiring and any deformation of lens shape can be prevented. A silicon nitride film is formed on a semiconductor substrate as an interlayer insulation film between a first-layer wiring and a second-layer wiring. The silicon nitride film includes, in an image pickup section, a lens array having a plurality of convex lenses which are formed with a surface of the silicon nitride film. A silicon dioxide film is grown on the silicon nitride film. Then, a second Al film is formed on the silicon dioxide film. The Al film is etched in an unnecessary portion such as the surfaces of the lens array, to form wiring.
摘要翻译：提供集成电路，并且在集成电路中，利用提供Al布线的层间绝缘膜的氮化硅膜形成微透镜阵列，从而可以防止Al布线中的任何应力迁移和透镜形状的任何变形。在半导体衬底上形成氮化硅膜作为第一层布线和第二层布线之间的层间绝缘膜。氮化硅膜在图像拾取部分中包括具有形成有氮化硅膜表面的多个凸透镜的透镜阵列。在氮化硅膜上生长二氧化硅膜。然后，在二氧化硅膜上形成第二Al膜。在不需要的部分（例如透镜阵列的表面）上蚀刻Al膜，以形成布线。

9. 发明申请

US20060151773A1 Solid-state imager and method for manufacturing same 有权
标题翻译：固态成像仪及其制造方法
公开(公告)号：US20060151773A1
公开(公告)日：2006-07-13
申请号：US10533030
申请日：2004-04-16
申请人： Seiji Kai , Ryouji Matsui , Tetsuya Yamada , Tsutomu Imai , Kazuyuki Takegawa
发明人： Seiji Kai , Ryouji Matsui , Tetsuya Yamada , Tsutomu Imai , Kazuyuki Takegawa
IPC分类号： H01L29/06
CPC分类号： H01L27/14643 , H01L27/14625 , H01L27/14627 , H01L27/1463 , H01L27/14685 , H01L27/14687 , H01L27/148
摘要： A solid-state imager is disclosed wherein isolation regions (4) are covered with power supply lines (8), a light-transmitting lens film (24) whose surface forms continuous convex portions above the isolation regions (4) convex towards channel regions (5) is provided, and a light-transmitting material having a refractive index lower than that of the lens film (24) is provided over the lens film (24).
摘要翻译：公开了一种固态成像器，其中隔离区域（4）被电源线（8）覆盖，透光透镜膜（24）的表面形成在隔离区域（4）上方的连续凸部， 5），并且在透镜膜（24）上设置折射率低于透镜膜（24）的透光性材料。

10. 发明申请

US20060103941A1 Microlens manufacturing method and solid-state image pickup device manufacturing method 审中-公开
标题翻译：微透镜制造方法和固态图像拾取器件制造方法
公开(公告)号：US20060103941A1
公开(公告)日：2006-05-18
申请号：US11272694
申请日：2005-11-15
申请人： Keiichi Yamaguchi , Seiji Kai
发明人： Keiichi Yamaguchi , Seiji Kai
IPC分类号： G02B27/10
CPC分类号： H01L27/14685 , B29D11/00278 , B29D11/00365 , G02B3/0012 , H01L27/14627
摘要： In order to efficiently form microlenses wide in light receiving surfaces, microlenses are manufactured according to the following process. A first light transmitting film on which columnar projections are formed with a predetermined interval is formed on a semiconductor substrate. A second light transmitting film made of a material same as that of the first light transmitting film is laminated on a surface of the first light transmitting film, and a planar shape of the projection is enlarged to make a separation between the projections narrower. Argon ions are irradiated onto the second light transmitting film to round off a corner of the second light transmitting film, and thereby a lens is formed.
摘要翻译：为了在光接收表面中有效地形成微透镜，根据以下过程制造微透镜。在半导体衬底上形成有以预定间隔形成柱状突起的第一透光膜。将由与第一透光膜相同的材料制成的第二透光膜层叠在第一透光膜的表面上，并且突起的平面形状被扩大以使突起之间的间隔更窄。将氩离子照射到第二透光膜上以使第二透光膜的角部圆滑，从而形成透镜。

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