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1. 发明申请

US20090085168A1 Semiconductor device and method for manufacturing same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20090085168A1
公开(公告)日：2009-04-02
申请号：US12232488
申请日：2008-09-18
申请人： Nobuji Kobayashi , Isamu Tomizawa
发明人： Nobuji Kobayashi , Isamu Tomizawa
IPC分类号： H01L23/00
CPC分类号： H01L23/564 , H01L23/585 , H01L2924/0002 , H01L2924/13091 , H01L2924/00
摘要： When a photoresist or the like is spin-coated on a semiconductor chip comprising a seal ring is formed, striation due to corners of the seal ring is suppressed. A wiring metal layer and a contact are layered, and a seal structure (28) that surrounds an element forming region (22) on a semiconductor chip (20) is formed. A planar shape of the seal ring structure (28) has shape that is, at a basic level, a rectangle corresponding with the shape of the semiconductor chip (20), but with cutoffs present on corner parts (60) of the rectangle. Specifically, the seal ring structure (28) is disposed along a periphery of a rectangle having corner cutoffs.
摘要翻译：当在包括密封环的半导体芯片上旋涂光致抗蚀剂等时，抑制了由于密封环的拐角引起的条纹。层叠布线金属层和接触体，形成在半导体芯片（20）上包围元件形成区域（22）的密封结构（28）。密封圈结构（28）的平面形状具有基本水平的与半导体芯片（20）的形状对应的矩形的形状，但是存在于矩形的角部（60）上的截止形状。具体地说，密封圈结构（28）沿具有拐角切口的矩形的周边设置。

2. 发明授权

US07348133B2 Method of manufacturing solid-state image sensing device 有权
标题翻译：制造固态摄像装置的方法
公开(公告)号：US07348133B2
公开(公告)日：2008-03-25
申请号：US10911649
申请日：2004-08-05
申请人： Isamu Tomizawa , Seiji Kai , Kouji Yagi
发明人： Isamu Tomizawa , Seiji Kai , Kouji Yagi
IPC分类号： G03F7/00
CPC分类号： H01L27/14685
摘要： The invention provides a manufacturing method of a solid-state image sensing device where light-receiving sensitivity is improved. The manufacturing method of the solid-state image sensing device of the invention has forming an insulating film on a light-receiving region and a non-light-receiving region, forming a mask pattern for forming a lens on the insulating film on the light-receiving region and a dummy mask pattern for forming a lens on the insulating film on the non-light-receiving region, forming a plurality of convex portions on the insulating film by etching the insulating film by using the mask pattern and the dummy mask pattern as a mask, forming a first lens film on the insulating film, forming a planarizing film having a lower etching rate than the first lens film on the first lens film, etching back the first lens film and the planarizing film, and forming a second lens film on the first lens film.
摘要翻译：本发明提供了一种提高了光接收灵敏度的固态摄像装置的制造方法。本发明的固态摄像装置的制造方法在受光区域和非受光区域上形成绝缘膜，在发光元件的绝缘膜上形成用于形成透镜的掩模图案，接收区域和用于在非光接收区域上的绝缘膜上形成透镜的哑掩模图案，通过使用掩模图案和伪掩模图案通过蚀刻绝缘膜在绝缘膜上形成多个凸部，作为掩模，在绝缘膜上形成第一透镜膜，形成具有比第一透镜膜上的第一透镜膜蚀刻率低的平坦化膜，对第一透镜膜和平坦化膜进行回蚀，形成第二透镜膜在第一张镜片上。

3. 发明申请

US20050042550A1 Method of manufacturing solid-state image sensing device 有权
标题翻译：制造固态摄像装置的方法
公开(公告)号：US20050042550A1
公开(公告)日：2005-02-24
申请号：US10911649
申请日：2004-08-05
申请人： Isamu Tomizawa , Seiji Kai , Kouji Yagi
发明人： Isamu Tomizawa , Seiji Kai , Kouji Yagi
IPC分类号： H01L27/14 , G03F7/00 , H01L27/148
CPC分类号： H01L27/14685
摘要： The invention provides a manufacturing method of a solid-state image sensing device where light-receiving sensitivity is improved. The manufacturing method of the solid-state image sensing device of the invention has forming an insulating film on a light-receiving region and a non-light-receiving region, forming a mask pattern for forming a lens on the insulating film on the light-receiving region and a dummy mask pattern for forming a lens on the insulating film on the non-light-receiving region, forming a plurality of convex portions on the insulating film by etching the insulating film by using the mask pattern and the dummy mask pattern as a mask, forming a first lens film on the insulating film, forming a planarizing film having a lower etching rate than the first lens film on the first lens film, etching back the first lens film and the planarizing film, and forming a second lens film on the first lens film.
摘要翻译：本发明提供了一种提高了光接收灵敏度的固态摄像装置的制造方法。本发明的固态摄像装置的制造方法在受光区域和非受光区域上形成绝缘膜，在发光元件的绝缘膜上形成用于形成透镜的掩模图案，接收区域和用于在非光接收区域上的绝缘膜上形成透镜的哑掩模图案，通过使用掩模图案和伪掩模图案通过蚀刻绝缘膜在绝缘膜上形成多个凸部，作为掩模，在绝缘膜上形成第一透镜膜，形成与第一透镜膜上的第一透镜膜相比蚀刻速率低的平坦化膜，对第一透镜膜和平坦化膜进行回蚀，形成第二透镜膜在第一张镜片上。

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