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1. 发明授权

US6147006A Cleaning gas 有权
标题翻译：清洁气体
公开(公告)号：US6147006A
公开(公告)日：2000-11-14
申请号：US479057
申请日：2000-01-07
申请人： Isamu Mouri , Tetsuya Tamura , Mitsuya Ohashi , Tadayuki Kawashima
发明人： Isamu Mouri , Tetsuya Tamura , Mitsuya Ohashi , Tadayuki Kawashima
IPC分类号： H01L21/31 , C23C16/44 , C23F1/12 , H01L21/304 , H01L21/306 , H01L21/302
CPC分类号： C23C16/4405 , H01L21/02049 , Y10S438/905
摘要： A cleaning gas which is employed to remove an unnecessary deposited material formed in a thin film forming apparatus by thermal decomposition of pentaethoxytantalum or tetraethoxysilane without damaging a reactor, tools, parts and piping of a silicon oxide film-forming apparatus or a tantalum oxide film-forming apparatus. The cleaning gas comprises HF gas and at least one of an oxygen-containing gas, a fluorine gas, a chlorine fluoride gas, a bromine fluoride gas and an iodine fluoride gas.
摘要翻译：一种清洁气体，其用于通过五乙氧基钽或四乙氧基硅烷的热分解除去形成在薄膜形成装置中的不需要的沉积材料，而不会损坏氧化硅膜形成装置或氧化钽膜形成装置的反应器，工具，部件和管道，成型装置。清洁气体包括HF气体和含氧气体，氟气，氟化氯气体，溴氟化物气体和碘化氟气体中的至少一种。

2. 发明授权

US06659111B1 Cleaning gas and method for cleaning vacuum treatment apparatus by flowing the cleaning gas 失效
标题翻译：清洁气体和通过使清洁气体流动来清洁真空处理装置的方法
公开(公告)号：US06659111B1
公开(公告)日：2003-12-09
申请号：US09480680
申请日：2000-01-11
申请人： Isamu Mouri , Tetsuya Tamura , Mitsuya Ohashi , Tadayuki Kawashima , Masahiko Matsudo , Tatsuo Hatano
发明人： Isamu Mouri , Tetsuya Tamura , Mitsuya Ohashi , Tadayuki Kawashima , Masahiko Matsudo , Tatsuo Hatano
IPC分类号： B08B900
CPC分类号： C23C16/4405 , C23F1/12 , H01L21/28556 , Y10S438/905
摘要： A cleaning gas includes HF gas whose concentration is greater than or equal to 1 vol % and oxygen containing gas whose concentration ranges from 0.5 to 99 vol %. The oxygen containing gas includes at least one of O2 gas, O3 gas, N2O gas, NO gas, CO gas and CO2 gas. The cleaning gas is employed to remove a deposited material generated in a vacuum treatment apparatus for producing a thin film of at least one of Ti, W, Ta, Ru, Ir, a compound thereof and an alloy thereof.
摘要翻译：清洁气体包括浓度大于或等于1体积％的HF气体和浓度范围为0.5至99体积％的含氧气体。含氧气体包括O 2气体，O 3气体，N 2 O气体，NO气体，CO气体和CO 2气体中的至少一种。采用清洁气体除去在真空处理装置中产生的沉积材料，用于制造Ti，W，Ta，Ru，Ir及其化合物及其合金中的至少一种的薄膜。

3. 发明申请

US20070029281A1 Gas for removing deposit and removal method using same 有权
公开(公告)号：US20070029281A1
公开(公告)日：2007-02-08
申请号：US11543968
申请日：2006-10-06
申请人： Isamu Mouri , Tetsuya Tamura , Mitsuya Ohashi
发明人： Isamu Mouri , Tetsuya Tamura , Mitsuya Ohashi
IPC分类号： C03C25/68
CPC分类号： C03C15/00 , C03C17/00 , C03C2218/33 , C09K13/00 , C23F4/00 , H01L21/31116 , H01L21/32136 , Y10S438/905 , Y10S438/906
摘要： The invention relates to a gas for removing deposits by a gas-solid reaction. This gas includes a hypofluorite that is defined as being a compound having at least one OF group in the molecule. Various deposits can be removed by the gas, and the gas can easily be made unharmful on the global environment after the removal of the deposits, due to the use of a hypofluorite. The gas may be a cleaning gas for cleaning, for example, the inside of an apparatus for producing semiconductor devices. This cleaning gas comprises 1-100 volume % of the hypofluorite. Alternatively, the gas of the invention may be an etching gas for removing an unwanted portion of a film deposited on a substrate. The unwanted portion can be removed by this etching gas as precisely as originally designed, due to the use of a hypofluorite. The invention further relates to a method for removing a deposit by the gas. This method includes the step (a) bringing the gas into contact with the deposit, thereby to remove the deposit by a gas-solid reaction.

4. 发明授权

US07744769B2 Gas for removing deposit and removal method using same 有权
标题翻译：用于除去沉积物和除去方法的气体使用它
公开(公告)号：US07744769B2
公开(公告)日：2010-06-29
申请号：US11543968
申请日：2006-10-06
申请人： Isamu Mouri , Tetsuya Tamura , Mitsuya Ohashi
发明人： Isamu Mouri , Tetsuya Tamura , Mitsuya Ohashi
IPC分类号： B44C1/22 , H01L21/302
CPC分类号： C03C15/00 , C03C17/00 , C03C2218/33 , C09K13/00 , C23F4/00 , H01L21/31116 , H01L21/32136 , Y10S438/905 , Y10S438/906
摘要： The invention relates to a gas for removing deposits by a gas-solid reaction. This gas includes a hypofluorite that is defined as being a compound having at least one OF group in the molecule. Various deposits can be removed by the gas, and the gas can easily be made unharmful on the global environment after the removal of the deposits, due to the use of a hypofluorite. The gas may be a cleaning gas for cleaning, for example, the inside of an apparatus for producing semiconductor devices. This cleaning gas comprises 1-100 volume % of the hypofluorite. Alternatively, the gas of the invention may be an etching gas for removing an unwanted portion of a film deposited on a substrate. The unwanted portion can be removed by this etching gas as precisely as originally designed, due to the use of a hypofluorite. The invention further relates to a method for removing a deposit by the gas. This method includes the step (a) bringing the gas into contact with the deposit, thereby to remove the deposit by a gas-solid reaction.
摘要翻译：本发明涉及通过气 - 固反应去除沉积物的气体。该气体包括被定义为在分子中具有至少一个OF基团的化合物的次氟酸盐。各种沉积物可以被气体除去，并且由于使用次氟酸盐，在清除沉积物之后，气体可以容易地在全球环境中变得不起作用。气体可以是用于清洁的清洁气体，例如用于制造半导体器件的设备的内部。该清洁气体包含1-100体积％的次氟酸盐。或者，本发明的气体可以是用于去除沉积在基板上的膜的不希望的部分的蚀刻气体。由于使用次氟酸盐，可以通过精确地由原始设计的这种蚀刻气体除去不想要的部分。本发明还涉及一种通过气体去除沉积物的方法。该方法包括步骤（a）使气体与沉积物接触，从而通过气固反应除去沉积物。

5. 发明授权

US07168436B2 Gas for removing deposit and removal method using same 有权
标题翻译：用于除去沉积物和除去方法的气体使用它
公开(公告)号：US07168436B2
公开(公告)日：2007-01-30
申请号：US10705532
申请日：2003-11-12
申请人： Isamu Mouri , Tetsuya Tamura , Mitsuya Ohashi
发明人： Isamu Mouri , Tetsuya Tamura , Mitsuya Ohashi
IPC分类号： B08B9/00 , H01L21/00
CPC分类号： C03C15/00 , C03C17/00 , C03C2218/33 , C09K13/00 , C23F4/00 , H01L21/31116 , H01L21/32136 , Y10S438/905 , Y10S438/906
摘要： The invention relates to a gas for removing deposits by a gas-solid reaction. This gas includes a hypofluorite that is defined as being a compound having at least one OF group in the molecule. Various deposits can be removed by the gas, and the gas can easily be made unharmful on the global environment after the removal of the deposits, due to the use of a hypofluorite. The gas may be a cleaning gas for cleaning, for example, the inside of an apparatus for producing semiconductor devices. This cleaning gas comprises 1–100 volume % of the hypofluorite. Alternatively, the gas of the invention may be an etching gas for removing an unwanted portion of a film deposited on a substrate. The unwanted portion can be removed by this etching gas as precisely as originally designed, due to the use of a hypofluorite. The invention further relates to a method for removing a deposit by the gas. This method includes the step (a) bringing the gas into contact with the deposit, thereby to remove the deposit by a gas-solid reaction.
摘要翻译：本发明涉及通过气 - 固反应去除沉积物的气体。该气体包括被定义为在分子中具有至少一个OF基团的化合物的次氟酸盐。各种沉积物可以被气体除去，并且由于使用次氟酸盐，在清除沉积物之后，气体可以容易地在全球环境中变得不起作用。气体可以是用于清洁的清洁气体，例如用于制造半导体器件的设备的内部。该清洁气体包含1-100体积％的次氟酸盐。或者，本发明的气体可以是用于去除沉积在基板上的膜的不希望的部分的蚀刻气体。由于使用次氟酸盐，可以通过精确地由原始设计的这种蚀刻气体除去不想要的部分。本发明还涉及一种通过气体去除沉积物的方法。该方法包括步骤（a）使气体与沉积物接触，从而通过气固反应除去沉积物。

6. 发明授权

US06673262B1 Gas for removing deposit and removal method using same 失效
标题翻译：用于除去沉积物和除去方法的气体使用它
公开(公告)号：US06673262B1
公开(公告)日：2004-01-06
申请号：US09208022
申请日：1998-12-09
申请人： Isamu Mori , Tetsuya Tamura , Mitsuya Ohashi
发明人： Isamu Mori , Tetsuya Tamura , Mitsuya Ohashi
IPC分类号： C09K1308
CPC分类号： C03C15/00 , C03C17/00 , C03C2218/33 , C09K13/00 , C23F4/00 , H01L21/31116 , H01L21/32136 , Y10S438/905 , Y10S438/906
摘要： The invention relates to a gas for removing deposits by a gas-solid reaction. This gas includes a hypofluorite that is defined as being a compound having at least one OF group in the molecule. Various deposits can be removed by the gas, and the gas can easily be made unharmful on the global environment after the removal of the deposits, due to the use of a hypofluorite. The gas may be a cleaning gas for cleaning, for example, the inside of an apparatus for producing semiconductor devices. This cleaning gas comprises 1-100 volume % of the hypofluorite. Alternatively, the gas of the invention may be an etching gas for removing an unwanted portion of a film deposited on a substrate. The unwanted portion can be removed by this etching gas as precisely as originally designed, due to the use of a hypofluorite. The invention further relates to a method for removing a deposit by the gas. This method includes the step (a) bringing the gas into contact with the deposit, thereby to remove the deposit by a gas-solid reaction.
摘要翻译：本发明涉及通过气 - 固反应去除沉积物的气体。该气体包括被定义为在分子中具有至少一个OF基团的化合物的次氟酸盐。各种沉积物可以被气体除去，并且由于使用次氟酸盐，在清除沉积物之后，气体可以容易地在全球环境中变得不起作用。气体可以是用于清洁的清洁气体，例如用于制造半导体器件的设备的内部。该清洁气体包含1-100体积％的次氟酸盐。或者，本发明的气体可以是用于去除沉积在基板上的膜的不希望的部分的蚀刻气体。由于使用次氟酸盐，可以通过精确地由原始设计的这种蚀刻气体除去不想要的部分。本发明还涉及一种通过气体去除沉积物的方法。该方法包括步骤（a）使气体与沉积物接触，从而通过气固反应除去沉积物。

7. 发明授权

US09556037B2 Process for producing fluorine-containing combined salt 有权
标题翻译：含氟组合盐的制备方法
公开(公告)号：US09556037B2
公开(公告)日：2017-01-31
申请号：US14113156
申请日：2012-04-11
申请人： Tetsuya Tamura
发明人： Tetsuya Tamura
IPC分类号： C01D15/04 , C01F11/22 , C01D3/02 , C01B9/08 , C01F11/00 , C01G23/00 , C01G49/00 , C01G1/06
CPC分类号： C01D15/04 , C01B9/08 , C01D3/02 , C01F11/00 , C01F11/22 , C01G1/06 , C01G23/002 , C01G49/009 , C01P2004/03 , C01P2004/52
摘要： Disclosed is a process for producing a fluorine-containing complex salt, characterized by that, on a reaction mother liquor containing a plurality of cation species and a fluoroanion in a state that they have been dissolved in a solvent, a trigger for accelerating decomposition of the fluoroanion is allowed to act, thereby precipitating a complex salt containing a plurality of cation species and fluorine, as a solid, from the reaction mother liquor. According to this process, it is possible to produce a monodispersed fluorine-containing complex salt with uniform particle size and shape.
摘要翻译：公开了一种制备含氟络盐的方法，其特征在于，在溶解有溶剂的状态下，在含有多种阳离子物质和氟代阴离子的反应母液中，加速分解的触发剂使氟代阴离子起作用，由此从反应母液中析出含有多个阳离子种类的络合盐和作为固体的氟。根据该方法，可以制造均匀的粒径和形状的单分散的含氟络合盐。

8. 发明申请

US20120214753A1 PHARMACEUTICAL COMPOSITION FOR ORAL ADMINISTRATION 审中-公开
标题翻译：用于口服管理的药物组合物
公开(公告)号：US20120214753A1
公开(公告)日：2012-08-23
申请号：US13502453
申请日：2010-10-22
申请人： Keisuke Sakaura , Yoshifumi Katakawa , Tetsuya Tamura , Kazuhiro Sako
发明人： Keisuke Sakaura , Yoshifumi Katakawa , Tetsuya Tamura , Kazuhiro Sako
IPC分类号： A61K31/7042 , B29C43/02
CPC分类号： A61K9/2077 , A61K9/1652 , A61K9/2009 , A61K9/2018 , A61K9/2027 , A61K9/2054 , A61K9/2059 , A61K31/401 , A61K31/7042 , A61K2300/00
摘要： The present invention provides a solid pharmaceutical composition comprising a cocrystal of (1S)-1,5-anhydro-1-[3-(1-benzothien-2-ylmethyl)-4-fluorophenyl]-D-glucitol and L-proline, in combination with crystalline cellulose, and also provides a method for producing the composition.
摘要翻译：本发明提供了包含（1S）-1,5-脱水-1- [3-（1-苯并噻吩-2-基甲基）-4-氟苯基] -D-葡萄糖醇和L-脯氨酸共结晶的固体药物组合物，与结晶纤维素组合，并且还提供了制备该组合物的方法。

9. 发明授权

US08172217B2 Sheet material transport apparatus and recording apparatus 有权
标题翻译：片材输送装置和记录装置
公开(公告)号：US08172217B2
公开(公告)日：2012-05-08
申请号：US13015489
申请日：2011-01-27
申请人： Tetsuya Tamura , Akira Nemura , Hiroki Chino
发明人： Tetsuya Tamura , Akira Nemura , Hiroki Chino
IPC分类号： B65H5/00 , B65H5/22
CPC分类号： B65H5/06
摘要： A sheet material transport apparatus includes a second planetary gear engaging with a transmission gear and providing planetary motion around the transmission gear. The second planetary gear is in a second separated position not capable of engaging with a first planetary gear during forward-direction rotation. The transmission gear engages with the first planetary gear and rotates in a direction that causes a second transport roller to rotate in the forward rotation direction, and positioned to engage with the first planetary gear that is positioned in a first engaging position during reverse rotation. A load is placed on the transmission gear by the second transport roller. The transmission gear rotates in the opposite direction to the forward-direction rotation. The second planetary gear applies a force on the first planetary gear in the direction that separates the first planetary gear from the transmission gear due to rotation.
摘要翻译：片材输送装置包括与传动齿轮啮合的第二行星齿轮，并且围绕传动齿轮提供行星运动。第二行星齿轮在向前旋转期间不能与第一行星齿轮接合的第二分离位置。传动齿轮与第一行星齿轮接合并沿着使第二输送辊沿正转方向旋转的方向旋转，并且定位成与反向旋转期间位于第一接合位置的第一行星齿轮接合。通过第二传送辊将负载放置在传动齿轮上。传动齿轮沿与正向旋转相反的方向旋转。第二行星齿轮由于旋转而使第一行星齿轮沿着使第一行星齿轮与变速齿轮分离的方向施加力。

10. 发明申请

US20090278888A1 LIQUID EJECTION APPARATUS 审中-公开
标题翻译：液体喷射装置
公开(公告)号：US20090278888A1
公开(公告)日：2009-11-12
申请号：US12436223
申请日：2009-05-06
申请人： Yosuke Nakano , Katsunari Kumagai , Satoshi Hamano , Tetsuya Tamura
发明人： Yosuke Nakano , Katsunari Kumagai , Satoshi Hamano , Tetsuya Tamura
IPC分类号： B41J2/165
CPC分类号： B41J19/207 , B41J2/1714
摘要： A liquid ejection apparatus including a carriage 8 that moves a head capable of ejecting liquid back and forth in a first direction D1 and a second direction D2 opposite to the first direction D1, a linear scaler 9 that is provided along the first direction D1 and the second direction D2, for recognizing the position of the carriage 8, and a mist guide 21 that is provided so as to be extended from the carriage 8 so as to face the linear scaler 9. The mist guide 21 includes the first slope surface 21b forming the acute slope angle R2 with respect to the first direction D1 and the second slope surface 21a forming the acute slope angle R1 with respect to the second direction D2.
摘要翻译：一种液体喷射装置，包括：滑架8，其移动能够沿第一方向D1前后移动的喷头和与第一方向D1相反的第二方向D2;线性定标器9，沿着第一方向D1和用于识别滑架8的位置的第二方向D2，以及设置成从滑架8延伸以面对线性缩放器9的雾导向器21.雾引导件21包括形成第一斜面21b 相对于第一方向D1的急倾斜角R2和相对于第二方向D2形成锐角倾角R1的第二倾斜面21a。

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