专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20180138084A1 ENHANCED VIA FILL MATERIAL AND PROCESSING FOR DUAL DAMASCENE INTEGRATION 审中-公开
公开(公告)号：US20180138084A1
公开(公告)日：2018-05-17
申请号：US15863675
申请日：2018-01-05
申请人： International Business Machines Corporation
发明人： James P. Doyle , Geraud Dubois , Nicholas C. Fuller , Teddie P. Magbitang , Robert D. Miller , Sampath Purushothaman , Will Volksen
IPC分类号： H01L21/768 , H01L23/522 , H01L23/532
CPC分类号： H01L21/76835 , H01L21/31144 , H01L21/76808 , H01L21/76811 , H01L21/76877 , H01L23/5226 , H01L23/53295
摘要： A process comprises insulating a porous low k substrate with an organic polymer coating where the polymer does not penetrate or substantially penetrate the pores of the substrate, e.g., pores having a pore diameter of about one nm to about 5 nm, thereby completely or substantially mitigating the potential for capacitance increase of the substrate. The substrate comprises porous microcircuit substrate materials with surface pores optionally opening into subsurface pores. The organic polymer has a molecular weight greater than about 5,000 to greater than about 10,000 and a glass transition temperature greater than about 200° C. up to about the processing temperature required for forming the imaging layer and antireflective layer in a microcircuit, e.g., greater than about 225° C. The invention includes production of a product by this process and an article of manufacture embodying these features.

2. 发明申请

US20170114246A1 BLOCK COPOLYMERS FOR DIRECTED SELF-ASSEMBLY APPLICATIONS 有权
公开(公告)号：US20170114246A1
公开(公告)日：2017-04-27
申请号：US14919070
申请日：2015-10-21
申请人： International Business Machines Corporation
发明人： Noel Arellano , Joy Cheng , Teddie P. Magbitang , Jed W. Pitera , Daniel P. Sanders , Kristin Schmidt , Hoa D. Truong , Ankit Vora
IPC分类号： C09D169/00 , C08J7/04 , C09D167/04 , C08G63/64 , C08G63/08
CPC分类号： C09D169/005 , C08F212/08 , C08G63/08 , C08G63/64 , C08G63/6822 , C08G64/18 , C08J7/047 , C08J2333/12 , C08J2467/04 , C08J2469/00 , C09D125/08 , C09D153/00 , C09D167/04 , C09D169/00 , G03F7/0002
摘要： Block copolymers (BCPs) for self-assembly applications comprise a linear fluorinated linking group L′ joining a pair of adjacent blocks. A film layer comprising a BCP, which is disposed on an underlayer and in contact with an atmosphere, is capable of forming a perpendicularly oriented domain pattern when the underlayer is preferentially wetted by one domain of an otherwise identical self-assembled BCP in which all fluorines of L′ are replaced by hydrogen. The BCP can be a low-chi or high-chi BCP. In a preferred embodiment, the BCP comprises a styrene-based first block, and a second block comprises a carbonate and/or ester repeat unit formed by ring opening polymerization of a cyclic carbonate and/or cyclic ester monomer. The linking group L′ has a lower surface energy than each of the polymer blocks.

3. 发明授权

US10370556B2 Surface modification by polymer anchoring on porous substrates 有权
公开(公告)号：US10370556B2
公开(公告)日：2019-08-06
申请号：US15375418
申请日：2016-12-12
申请人： International Business Machines Corporation
发明人： Geraud J. M. Dubois , Krystelle Lionti , Teddie P. Magbitang , Willi Volksen
IPC分类号： C09D133/12 , C09D125/06 , B05D3/10 , B05D5/00 , B05D1/00 , B05D3/02
摘要： Disclosed is a method for mechanically anchoring polymers on the surface of a porous substrate by trapping polymer chains within the pores of the substrate under capillary forces. Surface modification of the porous substrate is achieved by anchoring one end of the polymer chains within the pores while one or more other ends of the polymer chains dangle from the surface of the porous substrate. The method provides a unique way of modifying the surface of a material without chemical reactions or precursor-substrate interactions.

4. 发明申请

US20150311066A1 SURFACE PLASMA MODIFICATION OF POROUS THIN-FILMS TO OPTIMIZE PORE FILLING 有权
标题翻译：多孔薄膜的表面等离子体改性优化孔填充
公开(公告)号：US20150311066A1
公开(公告)日：2015-10-29
申请号：US14261357
申请日：2014-04-24
申请人： International Business Machines Corporation
发明人： Robert L. Bruce , Geraud J. Dubois , Theo J. Frot , Krystelle Lionti , Teddie P. Magbitang , Willi Volksen
IPC分类号： H01L21/02 , H01L21/311
CPC分类号： H01L21/02315 , H01L21/02203 , H01L21/3105 , H01L21/31116 , H01L21/31127 , H01L21/324 , H01L21/76802 , H01L21/76826
摘要： The present invention describes a process to modify a top portion of a porous ultra low-k (ULK) material in order to maximize porosity filling with a filling material that initially displayed low compatibility with the ULK material. Surface modification is achieved by a plasma treatment, enhancing the compatibility between the ULK surface and the filling material. The invention obtains high filling levels with minimum modification to the ULK material, as only a thin top portion is modified without significant pore sealing.
摘要翻译：本发明描述了一种修饰多孔超低k（ULK）材料的顶部的方法，以便最初用与ULK材料低相容性的填充材料最大化孔隙填充。通过等离子体处理实现表面改性，增强ULK表面和填充材料之间的相容性。本发明通过对ULK材料的最小修改获得高填充量，因为只有薄的顶部部分被修改而没有显着的孔密封。

5. 发明授权

US09058983B2 In-situ hardmask generation 有权
标题翻译：原位硬掩模生成
公开(公告)号：US09058983B2
公开(公告)日：2015-06-16
申请号：US13919725
申请日：2013-06-17
申请人： International Business Machines Corporation
发明人： Geraud Jean-Michel Dubois , Theo J. Frot , Teddie P. Magbitang , Willi Volksen
IPC分类号： B44C1/22 , H01L21/02
CPC分类号： H01L21/0226 , H01L21/02126 , H01L21/02203 , H01L21/0234 , H01L21/02362 , H01L21/3105 , H01L21/31144 , H01L21/76802 , H01L21/76826
摘要： In some examples, a process to generate an in-situ hardmask layer on porous dielectric materials using the densifying action of a plasma in conjunction with a sacrificial polymeric filler, the latter which enables control of the hardmask thickness as well as a well-defined interface with the underlying ILD.
摘要翻译：在一些实例中，使用等离子体与牺牲聚合物填料结合的致密化作用在多孔电介质材料上产生原位硬掩模层的方法，后者能够控制硬掩模厚度以及良好界定的界面与底层ILD。

6. 发明授权

US08871632B2 Reduction of pore fill material dewetting 有权
标题翻译：减少孔隙填充材料去湿
公开(公告)号：US08871632B2
公开(公告)日：2014-10-28
申请号：US13655599
申请日：2012-10-19
申请人： International Business Machines Corporation
发明人： Geraud Jean-Michel Dubois , Theo J. Frot , Teddie P. Magbitang , Willi Volksen
IPC分类号： H01L21/4763 , H01L21/768 , H01L21/3105 , H01L21/02
CPC分类号： H01L21/3105 , H01L21/02203 , H01L21/76802 , H01L21/7682 , H01L21/76822 , H01L21/76826 , H01L21/76828 , H01L2221/1047
摘要： In one embodiment, a program storage device readable by a machine, tangibly embodying a program of instructions executable by the machine for performing operations, includes operations comprising: providing a structure comprising a first layer overlying a substrate, where the first layer comprises a dielectric material having a plurality of pores; applying a filling material to a surface of the first layer, where the filling material comprises a polymer and at least one additive, where the at least one additive comprises at least one of a surfactant, a high molecular weight polymer and a solvent (e.g., a high boiling point solvent); and after applying the filling material, heating the structure to enable the filling material to at least partially fill the plurality of pores uniformly across an area of the first layer, where heating the structure results in residual filling material being uniformly left on the surface of the first layer.
摘要翻译：在一个实施例中，机器可读的程序存储设备有形地体现了可由机器执行的用于执行操作的指令程序，包括：提供包括覆盖衬底的第一层的结构，其中第一层包括电介质材料具有多个孔; 将填充材料施加到第一层的表面，其中填充材料包含聚合物和至少一种添加剂，其中至少一种添加剂包含表面活性剂，高分子量聚合物和溶剂中的至少一种（例如，高沸点溶剂）; 并且在施加填充材料之后，加热该结构以使得填充材料能够在第一层的区域上均匀地至少部分地填充多个孔，其中加热该结构导致剩余的填充材料均匀地留在表面上第一层

7. 发明申请

US20130045608A1 REDUCTION OF PORE FILL MATERIAL DEWETTING 有权
标题翻译：减少填料填充材料
公开(公告)号：US20130045608A1
公开(公告)日：2013-02-21
申请号：US13655599
申请日：2012-10-19
申请人： International Business Machines Corporation
发明人： Geraud Jean-Michel Dubois , Theo J. Frot , Teddie P. Magbitang , Willi Volksen
IPC分类号： H01L21/312
CPC分类号： H01L21/3105 , H01L21/02203 , H01L21/76802 , H01L21/7682 , H01L21/76822 , H01L21/76826 , H01L21/76828 , H01L2221/1047
摘要： In one embodiment, a program storage device readable by a machine, tangibly embodying a program of instructions executable by the machine for performing operations, includes operations comprising: providing a structure comprising a first layer overlying a substrate, where the first layer comprises a dielectric material having a plurality of pores; applying a filling material to a surface of the first layer, where the filling material comprises a polymer and at least one additive, where the at least one additive comprises at least one of a surfactant, a high molecular weight polymer and a solvent (e.g., a high boiling point solvent); and after applying the filling material, heating the structure to enable the filling material to at least partially fill the plurality of pores uniformly across an area of the first layer, where heating the structure results in residual filling material being uniformly left on the surface of the first layer.
摘要翻译：在一个实施例中，机器可读的程序存储设备有形地体现了可由机器执行的用于执行操作的指令程序，包括：提供包括覆盖衬底的第一层的结构，其中第一层包括电介质材料具有多个孔; 将填充材料施加到第一层的表面，其中填充材料包含聚合物和至少一种添加剂，其中至少一种添加剂包含表面活性剂，高分子量聚合物和溶剂中的至少一种（例如，高沸点溶剂）; 并且在施加填充材料之后，加热该结构以使得填充材料能够在第一层的区域上均匀地至少部分地填充多个孔，其中加热该结构导致剩余的填充材料均匀地留在表面上第一层

8. 发明申请

US20170294341A1 HIGH-CHI BLOCK COPOLYMERS FOR INTERCONNECT STRUCTURES BY DIRECTED SELF-ASSEMBLY 有权
公开(公告)号：US20170294341A1
公开(公告)日：2017-10-12
申请号：US15092693
申请日：2016-04-07
申请人： International Business Machines Corporation
发明人： Chi-Chun Liu , Teddie P. Magbitang , Daniel P. Sanders , Kristin Schmidt , Ankit Vora
IPC分类号： H01L21/768 , C23F1/00 , C08G81/02
CPC分类号： H01L21/0274 , B82Y10/00 , B82Y40/00 , C08G81/027 , G03F7/0002 , G03F7/002 , G03F7/165 , G03F7/20 , G03F7/2022 , G03F7/2059 , G03F7/32 , G03F7/40 , H01L21/02112 , H01L21/0271 , H01L21/3065 , H01L21/31144 , H01L21/76816
摘要： High-chi diblock copolymers are disclosed whose self-assembly properties are suitable for forming hole and bar openings for conductive interconnects in a multi-layered structure. The hole and bar openings have reduced critical dimension, improved uniformity, and improved placement error compared to the industry standard poly(styrene)-b-poly(methyl methacrylate) block copolymer (PS-b-PMMA). The BCPs comprise a poly(styrene) block, which can optionally include repeat units derived from trimethylsilyl styrene, and a second block that can be a polycarbonate block or a polyester block. Block copolymers comprising a fluorinated linking group L′ comprising 1-25 fluorines between the blocks can provide further improvement in uniformity of the openings.

9. 发明授权

US09773698B2 Method of manufacturing an ultra low dielectric layer 有权
公开(公告)号：US09773698B2
公开(公告)日：2017-09-26
申请号：US14871305
申请日：2015-09-30
申请人： International Business Machines Corporation
发明人： Robert L. Bruce , Geraud J. Dubois , Gregory Fritz , Teddie P. Magbitang , Hiroyuki Miyazoe , Willi Volksen
IPC分类号： H01L21/02 , H01L21/316 , H01L21/768 , H01L21/3105 , H01L23/528 , H01L23/532 , C09D183/04 , H01L23/52
CPC分类号： H01L21/76837 , C09D183/04 , H01L21/02118 , H01L21/02123 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/02318 , H01L21/02348 , H01L21/7682 , H01L21/76825 , H01L21/76828 , H01L21/76885 , H01L23/528 , H01L23/5329 , H01L2221/1047 , H01L2224/27416 , H01L2224/85447
摘要： An article may include a structure including a patterned metal on a surface of a substrate, the patterned metal including metal features separated by gaps of an average dimension of less than about 1000 nm. A porous low dielectric constant material having a dielectric value of less than about 2.7 substantially occupies all gaps. An interface between the metal features and the porous low dielectric constant material may include less than about 0.1% by volume of voids. A method may include depositing a filling material including a silicon-based resin having a molecular weight of less than about 30,000 Da and a porogen having a molecular weight greater than about 400 Da onto a structure comprising a patterned metal. The deposited filling material may be subjected to a first thermal treatment to substantially fill all gaps, and subjected to a second thermal treatment and a UV radiation treatment.

10. 发明申请

US20170092534A1 ULTRA LOW DIELECTRIC LAYER 有权
公开(公告)号：US20170092534A1
公开(公告)日：2017-03-30
申请号：US14871305
申请日：2015-09-30
申请人： International Business Machines Corporation
发明人： Robert L. Bruce , Geraud J. Dubois , Gregory Fritz , Teddie P. Magbitang , Hiroyuki Miyazoe , Willi Volksen
IPC分类号： H01L21/768 , H01L23/528 , H01L23/532 , H01L21/02
CPC分类号： H01L21/76837 , C09D183/04 , H01L21/02118 , H01L21/02123 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/02318 , H01L21/02348 , H01L21/7682 , H01L21/76825 , H01L21/76828 , H01L21/76885 , H01L23/528 , H01L23/5329 , H01L2221/1047 , H01L2224/27416 , H01L2224/85447
摘要： An article may include a structure including a patterned metal on a surface of a substrate, the patterned metal including metal features separated by gaps of an average dimension of less than about 1000 nm. A porous low dielectric constant material having a dielectric value of less than about 2.7 substantially occupies all gaps. An interface between the metal features and the porous low dielectric constant material may include less than about 0.1% by volume of voids. A method may include depositing a filling material including a silicon-based resin having a molecular weight of less than about 30,000 Da and a porogen having a molecular weight greater than about 400 Da onto a structure comprising a patterned metal. The deposited filling material may be subjected to a first thermal treatment to substantially fill all gaps, and subjected to a second thermal treatment and a UV radiation treatment.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式