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1. 发明授权

US09738765B2 Hybrid topographical and chemical pre-patterns for directed self-assembly of block copolymers 有权
公开(公告)号：US09738765B2
公开(公告)日：2017-08-22
申请号：US14626082
申请日：2015-02-19
申请人： International Business Machines Corporation
发明人： Markus Brink , Joy Cheng , Gregory S. Doerk , Alexander M. Friz , Michael A. Guillorn , Chi-Chun Liu , Daniel P. Sanders , Gurpreet Singh , Melia Tjio , HsinYu Tsai
IPC分类号： B44C1/22 , C08J7/04 , H01L21/02 , B05D3/04 , B05D7/00 , C23C14/04
CPC分类号： C08J7/047 , B05D1/185 , B05D3/0453 , B05D5/02 , B05D7/53 , B05D7/54 , C08J2325/14 , C08J2333/12 , C08J2333/14 , C08J2453/00 , C23C14/042 , C23C14/08 , G03F7/0002 , H01L21/02118 , H01L21/02255 , H01L21/0337
摘要： Hybrid pre-patterns were prepared for directed self-assembly of a given block copolymer capable of forming a lamellar domain pattern. The hybrid pre-patterns have top surfaces comprising independent elevated surfaces interspersed with adjacent recessed surfaces. The elevated surfaces are neutral wetting to the domains formed by self-assembly. Material below the elevated surfaces has greater etch-resistance than material below the recessed surfaces in a given etch process. Following other dimensional constraints of the hybrid pre-pattern described herein, a layer of the given block copolymer was formed on the hybrid pre-pattern. Self-assembly of the layer produced a lamellar domain pattern comprising self-aligned, unidirectional, perpendicularly oriented lamellae over the elevated surfaces, and parallel and/or perpendicularly oriented lamellae over recessed surfaces. The domain patterns displayed long range order along the major axis of the pre-pattern. The lamellar domain patterns are useful in forming transfer patterns comprising two-dimensional customized features.

2. 发明申请

US20160244581A1 HYBRID TOPOGRAPHICAL AND CHEMICAL PRE-PATTERNS FOR DIRECTED SELF-ASSEMBLY OF BLOCK COPOLYMERS 有权
标题翻译：用于方向自组装块状共聚物的混合地理和化学预先图案
公开(公告)号：US20160244581A1
公开(公告)日：2016-08-25
申请号：US14626082
申请日：2015-02-19
申请人： International Business Machines Corporation
发明人： Markus Brink , Joy Cheng , Gregory S. Doerk , Alexander M. Friz , Michael A. Guillorn , Chi-Chun Liu , Daniel P. Sanders , Gurpreet Singh , Melia Tjio , HsinYu Tsai
IPC分类号： C08J7/04 , B05D3/04 , B05D7/00
CPC分类号： C08J7/047 , B05D1/185 , B05D3/0453 , B05D5/02 , B05D7/53 , B05D7/54 , C08J2325/14 , C08J2333/12 , C08J2333/14 , C08J2453/00 , C23C14/042 , C23C14/08 , G03F7/0002 , H01L21/02118 , H01L21/02255 , H01L21/0337
摘要： Hybrid pre-patterns were prepared for directed self-assembly of a given block copolymer capable of forming a lamellar domain pattern. The hybrid pre-patterns have top surfaces comprising independent elevated surfaces interspersed with adjacent recessed surfaces. The elevated surfaces are neutral wetting to the domains formed by self-assembly. Material below the elevated surfaces has greater etch-resistance than material below the recessed surfaces in a given etch process. Following other dimensional constraints of the hybrid pre-pattern described herein, a layer of the given block copolymer was formed on the hybrid pre-pattern. Self-assembly of the layer produced a lamellar domain pattern comprising self-aligned, unidirectional, perpendicularly oriented lamellae over the elevated surfaces, and parallel and/or perpendicularly oriented lamellae over recessed surfaces. The domain patterns displayed long range order along the major axis of the pre-pattern. The lamellar domain patterns are useful in forming transfer patterns comprising two-dimensional customized features.
摘要翻译：制备混合预图案以用于定向自组装能够形成层状结构域图案的给定嵌段共聚物。混合预图案具有顶表面，其包括散布有相邻凹陷表面的独立升高表面。升高的表面是通过自组装形成的区域的中性润湿。在给定的蚀刻工艺中，升高的表面之下的材料比凹陷表面下方的材料具有更大的抗蚀刻性。按照本文所述的混合预图案的其他尺寸约束，在混合预图案上形成给定嵌段共聚物层。层的自组装在升高的表面上产生包括自对准的，单向的，垂直取向的薄片的层状结构域图案，以及在凹面上平行和/或垂直取向的薄片。域模式沿着预图案的长轴显示长距离顺序。层状结构域图案可用于形成包括二维定制特征的转印图案。

3. 发明申请

US20150329664A1 METHODS OF FORMING BLOCK POLYMERS FOR DIRECTED SELF-ASSEMBLY 有权
标题翻译：形成用于指导自组装的块状聚合物的方法
公开(公告)号：US20150329664A1
公开(公告)日：2015-11-19
申请号：US14280167
申请日：2014-05-16
申请人： International Business Machines Corporation
发明人： Joy Cheng , Anindarupa Chunder , Daniel P. Sanders , Melia Tjio , Ankit Vora
IPC分类号： C08F293/00 , C09D169/00
CPC分类号： C08G64/18 , B82Y40/00 , C08F293/00 , C08F2438/01 , C08G64/30 , C08G81/027 , C09D169/00 , G03F7/0002
摘要： Block polymers are formed by ring opening polymerization (ROP) of a cyclic carbonate monomer using a polymeric initiator for the ROP that comprises repeating functionalized ethylene units. The block polymers are free of, or substantially free of, any polymer having a chemical structure that does not comprise the polymer backbone of the polymeric initiator. The block polymers are capable of directed self-assembly.
摘要翻译：嵌段聚合物通过使用包含重复官能化乙烯单元的用于ROP的聚合引发剂的环状碳酸酯单体的开环聚合（ROP）形成。嵌段聚合物不含或基本上不含具有不包含聚合物引发剂的聚合物主链的化学结构的任何聚合物。嵌段聚合物能够引导自组装。

4. 发明授权

US09107291B2 Formation of a composite pattern including a periodic pattern self-aligned to a prepattern 有权
标题翻译：形成一个复合图案，它包括一个与原图形自对齐的周期性图案
公开(公告)号：US09107291B2
公开(公告)日：2015-08-11
申请号：US13683447
申请日：2012-11-21
申请人： International Business Machines Corporation
发明人： Joy Cheng , Gregory S. Doerk , Charles T. Rettner , Daniel P. Sanders
IPC分类号： G03F7/38 , H05K3/00
CPC分类号： H05K3/007 , G03F7/0002 , H05K2203/0548
摘要： A chemical pattern layer including an orientation control material and a prepattern material is formed over a substrate. The chemical pattern layer includes alignment-conferring features and additional masking features. A self-assembling material is applied and self-aligned over the chemical pattern layer. The polymeric block components align to the alignment-conferring features, while the alignment is not altered by the additional masking features. A first polymeric block component is removed selective to a second polymeric block component by an etch to form second polymeric block component portions having a pattern. A composite pattern of the pattern of an etch-resistant material within the chemical pattern layer and the pattern of the second polymeric block component portions can be transferred into underlying material layers employing at least another etch.
摘要翻译：在基板上形成包括取向控制材料和预图案材料的化学图案层。化学图案层包括对准赋予特征和附加掩模特征。自组装材料在化学图案层上施加并自对准。聚合物嵌段组分与对准赋予特征对准，而对准不会被附加的掩蔽特征所改变。通过蚀刻将第一聚合物嵌段组分选择性地除去第二聚合物嵌段组分以形成具有图案的第二聚合物嵌段组分部分。化学图案层内的抗蚀刻材料的图案和第二聚合物嵌段组分部分的图案的复合图案可以使用至少另一种蚀刻转移到下面的材料层中。

5. 发明授权

US08986596B2 Methods of forming nanoparticles using semiconductor manufacturing infrastructure 有权
标题翻译：使用半导体制造基础设施形成纳米颗粒的方法
公开(公告)号：US08986596B2
公开(公告)日：2015-03-24
申请号：US13680071
申请日：2012-11-18
申请人： International Business Machines Corporation
发明人： Joy Cheng , Daniel J. Coady , Matthew E. Colburn , Blake W. Davis , James L. Hedrick , Steven J. Holmes , Hareem T. Maune , Alshakim Nelson
IPC分类号： B81C1/00 , B29B9/16 , B82Y40/00
CPC分类号： B29B9/16 , B81C1/00214 , B82Y40/00
摘要： A method of preparing particles comprises forming by optical lithography a topographic template layer disposed on a surface of a substrate, which is suitable for spin casting. The template layer comprises a non-crosslinked template polymer having a pattern of independent wells therein for molding independent particles. Spin casting a particle-forming composition onto the template layer forms a composite layer comprising the template polymer and the particles disposed in the wells. The composite layer is removed from the substrate using a stripping agent that dissolves the template polymer without dissolving the particles. The particles are then isolated.
摘要翻译：制备颗粒的方法包括通过光刻法形成设置在基材表面上的适于旋转浇铸的地形模板层。模板层包含非交联模板聚合物，其具有用于模制独立颗粒的独立孔的图案。将颗粒形成组合物旋转到模板层上形成包含模板聚合物和设置在孔中的颗粒的复合层。使用溶解模板聚合物而不溶解颗粒的剥离剂从基材上除去复合层。然后分离颗粒。

6. 发明授权

US10037398B2 Pattern decomposition method for wiring patterns with chemoepitaxy based directed self assembly 有权
公开(公告)号：US10037398B2
公开(公告)日：2018-07-31
申请号：US15134551
申请日：2016-04-21
申请人： International Business Machines Corporation
发明人： Markus Brink , Joy Cheng , Gregory S. Doerk , Michael A. Guillorn , Kafai Lai , Hsinyu Tsai
IPC分类号： G06F17/50 , H01L21/027
CPC分类号： G06F17/5077 , G03F7/0002 , H01L21/0271 , H01L21/0337
摘要： A chemical pattern layer including an orientation control material and a prepattern material is formed over a substrate. The chemical pattern layer includes alignment-conferring features and additional masking features. A self-assembling material is applied and self-aligned over the chemical pattern layer. The polymeric block components align to the alignment-conferring features, while the alignment is not altered by the additional masking features. A first polymeric block component is removed selective to a second polymeric block component by an etch to form second polymeric block component portions having a pattern. A composite pattern of the pattern of an etch-resistant material within the chemical pattern layer and the pattern of the second polymeric block component portions can be transferred into underlying material layers employing at least another etch.

7. 发明授权

US09911603B2 Pattern decomposition for directed self assembly patterns templated by sidewall image transfer 有权
公开(公告)号：US09911603B2
公开(公告)日：2018-03-06
申请号：US15397092
申请日：2017-01-03
申请人： International Business Machines Corporation
发明人： Joy Cheng , Michael A. Guillorn , Chi-Chun Liu , Hsinyu Tsai
IPC分类号： H01L21/027 , H01L21/311 , H01L21/308 , H01L21/033 , H01L21/768 , C08L53/00 , G03F7/00 , G03F1/00
CPC分类号： H01L21/0271 , B81C2201/0198 , C08L53/00 , C08L53/005 , G03F1/00 , G03F7/0002 , H01L21/0274 , H01L21/0337 , H01L21/308 , H01L21/3081 , H01L21/3086 , H01L21/31144 , H01L21/76816
摘要： After forming spacers over a hard mask layer using a sidewall image transfer process, a neutral material layer is formed on the portions of the hard mask layer that are not covered by the spacers. The spacers and the neutral material layer guide the self-assembly of a block copolymer material. The microphase separation of the block copolymer material provides a lamella structure of alternating domains of the block copolymer material.

8. 发明申请

US20170344691A1 PATTERN DECOMPOSITION METHOD FOR WIRING PATTERNS WITH CHEMOEPITAXY BASED DIRECTED SELF ASSEMBLY 审中-公开
公开(公告)号：US20170344691A1
公开(公告)日：2017-11-30
申请号：US15134551
申请日：2016-04-21
申请人： International Business Machines Corporation
发明人： Markus Brink , Joy Cheng , Gregory S. Doerk , Michael A. Guillorn , Kafai Lai , Hsinyu Tsai
IPC分类号： G06F17/50 , H01L21/027
CPC分类号： G06F17/5077 , G03F7/0002 , H01L21/0271 , H01L21/0337
摘要： A chemical pattern layer including an orientation control material and a prepattern material is formed over a substrate. The chemical pattern layer includes alignment-conferring features and additional masking features. A self-assembling material is applied and self-aligned over the chemical pattern layer. The polymeric block components align to the alignment-conferring features, while the alignment is not altered by the additional masking features. A first polymeric block component is removed selective to a second polymeric block component by an etch to form second polymeric block component portions having a pattern. A composite pattern of the pattern of an etch-resistant material within the chemical pattern layer and the pattern of the second polymeric block component portions can be transferred into underlying material layers employing at least another etch.

9. 发明申请

US20170066853A1 FLUORO-ALCOHOL ADDITIVES FOR ORIENTATION CONTROL OF BLOCK COPOLYMERS 审中-公开
标题翻译：用于方块控制块状共聚物的氟醇添加剂
公开(公告)号：US20170066853A1
公开(公告)日：2017-03-09
申请号：US15357786
申请日：2016-11-21
申请人： International Business Machines Corporation
发明人： Joy Cheng , Anindarupa Chunder , Ankit Vora
IPC分类号： C08F120/28 , C08F212/14 , C09D7/12 , C08F112/14
CPC分类号： C08F120/28 , B82Y30/00 , C08F12/20 , C08F12/24 , C08F112/14 , C08F114/18 , C08F120/22 , C08F212/08 , C08F212/14 , C08F214/182 , C08F214/186 , C08F220/22 , C08F220/24 , C08F2220/301 , C08F2438/01 , C08G64/18 , C09D7/65 , C09D125/18 , C09D169/00 , H01L21/0271 , C08L101/04 , C08F2/38 , C08F2220/281 , C08F2220/325 , C08F2220/282
摘要： A film layer comprising a high-chi (χ) block copolymer for self-assembly and a hexafluoroalcohol-containing surface active polymer (SAP) was prepared on a substrate surface that was neutral wetting to the domains of the self-assembled block copolymer. The block copolymer comprises at least one polycarbonate block and at least one other block (e.g., a substituted or unsubstituted styrene-based block). The film layer, whose top surface has contact with an atmosphere, self-assembles to form a lamellar or cylindrical domain pattern having perpendicular orientation with respect to the underlying surface. Other morphologies (e.g., islands and holes of height 1.0 Lo) were obtained with films lacking the SAP. The SAP is preferentially miscible with, and lowers the surface energy of, the domain comprising the polycarbonate block.
摘要翻译：在自组装嵌段共聚物的畴上中性润湿的基材表面上制备包含用于自组装的高岐（χ）嵌段共聚物和含六氟醇的表面活性聚合物（SAP）的薄膜层。嵌段共聚物包含至少一个聚碳酸酯嵌段和至少一个其它嵌段（例如，取代或未取代的基于苯乙烯的嵌段）。其顶表面与大气接触的膜层自组装形成相对于下面的表面具有垂直取向的层状或圆柱形区域图案。用缺少SAP的薄膜获得其他形态（如高度为1.0Lo的岛和孔）。 SAP优选与包含聚碳酸酯嵌段的结构域混溶并降低其表面能。

10. 发明申请

US20160362513A1 ADDITIVES FOR ORIENTATION CONTROL OF BLOCK COPOLYMERS 审中-公开
公开(公告)号：US20160362513A1
公开(公告)日：2016-12-15
申请号：US15250139
申请日：2016-08-29
申请人： International Business Machines Corporation
发明人： Joy Cheng , Anindarupa Chunder , Daniel P. Sanders , Ankit Vora
IPC分类号： C08F220/68 , C08G64/18 , C08F220/04
CPC分类号： C08F220/68 , B81C1/00523 , B81C2201/0149 , C08F12/20 , C08F12/22 , C08F212/08 , C08F212/14 , C08F220/04 , C08F2438/01 , C08G64/18 , C08G64/183 , C08L25/08 , C08L69/00 , C09D125/08 , C09D125/18 , C09D127/12 , C09D133/16 , C09D169/00 , G03F7/0002 , H01L21/0271 , C08F2220/281 , C08F2220/325 , C08F2220/283 , C08F220/14 , C08F220/24
摘要： A film layer comprising a high-chi (χ) block copolymer for self-assembly and a surface active polymer (SAP) was prepared on a substrate surface that was neutral wetting to the domains of the self-assembled block copolymer. The block copolymer comprises at least one polycarbonate block and at least one other block (e.g., a styrene-based block). The SAP comprises a hydrophobic fluorinated first repeat unit and a non-fluorinated second repeat unit bearing at least one pendent OH group present as an alcohol or acid (e.g., carboxylic acid). The film layer, whose top surface has contact with an atmosphere, self-assembles to form a lamellar or cylindrical domain pattern having perpendicular orientation with respect to the underlying surface. Other morphologies (e.g., islands and holes of height 1.0Lo) were obtained with films lacking the SAP. The SAP is preferentially miscible with, and lowers the surface energy of, the domain comprising the polycarbonate block.

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