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1. 发明授权

US10008421B2 Capacitance monitoring using x-ray diffraction 有权
$Capacitance monitoring using x-ray diffraction$
公开(公告)号：US10008421B2
公开(公告)日：2018-06-26
申请号：US15831810
申请日：2017-12-05
申请人： International Business Machines Corporation
发明人： Donghun Kang , Kriteshwar K. Kohli , Oh-jung Kwon , Anita Madan , Conal E. Murray
IPC分类号： H01L21/00 , H01L21/66 , G01R31/265 , G01N23/20
CPC分类号： H01L22/14 , G01N23/20 , G01N23/207 , G01N2223/0566 , G01N2223/607 , G01N2223/611 , G01R31/2656 , H01L22/12
摘要： A method includes measuring a difference between a primary X-ray diffraction peak and a secondary X-ray diffraction peak, the primary X-ray diffraction peak corresponds to an unstrained portion of a semiconductor substrate and the secondary X-ray diffraction peak corresponds to a strained portion of the semiconductor substrate, the difference between the primary X-ray diffraction peak and the secondary X-ray diffraction peak includes a delta shift peak that corresponds to changes in a crystal lattice caused by a stress applied to the strained portion of the semiconductor substrate, the delta shift peak includes variations in a deep trench capacitance.

2. 发明授权

US09911597B2 Trench metal insulator metal capacitor with oxygen gettering layer 有权
公开(公告)号：US09911597B2
公开(公告)日：2018-03-06
申请号：US15595503
申请日：2017-05-15
申请人： International Business Machines Corporation
发明人： Takashi Ando , Eduard A. Cartier , Michael P. Chudzik , Aritra Dasgupta , Herbert L. Ho , Donghun Kang , Rishikesh Krishnan , Vijay Narayanan , Kern Rim
IPC分类号： H01L29/66 , H01L21/02 , H01L21/322 , H01L21/20 , H01G4/005 , H01L27/108 , H01L49/02
CPC分类号： H01L21/02365 , H01G4/005 , H01L21/02178 , H01L21/02617 , H01L21/20 , H01L21/3221 , H01L23/26 , H01L27/10861 , H01L27/1087 , H01L28/60 , H01L28/90 , H01L29/66181 , H01L2924/0002 , H01L2924/00
摘要： A method including forming an oxygen gettering layer on one side of an insulating layer of a deep trench capacitor between the insulating layer and a substrate, the oxygen gettering layer including an aluminum containing compound, and depositing an inner electrode on top of the insulating layer, the inner electrode including a metal.

3. 发明申请

US20160178679A1 CAPACITANCE MONITORING USING X-RAY DIFFRACTION 有权
标题翻译：使用X射线衍射进行电容监测
公开(公告)号：US20160178679A1
公开(公告)日：2016-06-23
申请号：US14575134
申请日：2014-12-18
申请人： International Business Machines Corporation
发明人： Donghun Kang , Kriteshwar K. Kohli , Oh-jung Kwon , Anita Madan , Conal E. Murray
IPC分类号： G01R27/26 , G01R31/265 , H01L21/66 , G01N23/20
CPC分类号： H01L22/14 , G01N23/20 , G01N23/207 , G01N2223/0566 , G01N2223/607 , G01N2223/611 , G01R31/2656 , H01L22/12
摘要： A method includes measuring a difference between a primary X-ray diffraction peak and a secondary X-ray diffraction peak, the primary X-ray diffraction peak corresponds to an unstrained portion of a semiconductor substrate and the secondary X-ray diffraction peak corresponds to a strained portion of the semiconductor substrate, the difference between the primary X-ray diffraction peak and the secondary X-ray diffraction peak includes a delta shift peak that corresponds to changes in a crystal lattice caused by a stress applied to the strained portion of the semiconductor substrate, the delta shift peak includes variations in a deep trench capacitance.
摘要翻译：一种方法包括测量主X射线衍射峰和次X射线衍射峰之间的差异，主X射线衍射峰对应于半导体衬底的未应变部分，并且次X射线衍射峰对应于半导体衬底的应变部分，初级X射线衍射峰和次级X射线衍射峰之间的差包括对应于施加到半导体的应变部分的应力引起的晶格变化的δ偏移峰衬底，δ偏移峰包括深沟槽电容的变化。

4. 发明申请

US20160181353A1 TRENCH METAL-INSULATOR-METAL CAPACITOR WITH OXYGEN GETTERING LAYER 有权
标题翻译：金属绝缘体 - 金属电容器与氧气捕获层
公开(公告)号：US20160181353A1
公开(公告)日：2016-06-23
申请号：US14572974
申请日：2014-12-17
申请人： International Business Machines Corporation
发明人： Takashi Ando , Eduard A. Cartier , Michael P. Chudzik , Aritra Dasgupta , Herbert L. Ho , Donghun Kang , Rishikesh Krishnan , Vijay Narayanan , Kern Rim
IPC分类号： H01L49/02 , H01L23/00
CPC分类号： H01L21/02365 , H01G4/005 , H01L21/02178 , H01L21/02617 , H01L21/20 , H01L21/3221 , H01L23/26 , H01L27/10861 , H01L27/1087 , H01L28/60 , H01L28/90 , H01L29/66181 , H01L2924/0002 , H01L2924/00
摘要： A method including forming an oxygen gettering layer on one side of an insulating layer of a deep trench capacitor between the insulating layer and a substrate, the oxygen gettering layer including an aluminum containing compound, and depositing an inner electrode on top of the insulating layer, the inner electrode including a metal.
摘要翻译：一种包括在绝缘层和衬底之间的深沟槽电容器的绝缘层的一侧上形成氧吸气层的方法，所述吸氧层包括含铝化合物，并且在绝缘层的顶部上沉积内电极，内部电极包括金属。

5. 发明授权

US09870960B2 Capacitance monitoring using X-ray diffraction 有权
$Capacitance monitoring using X-ray diffraction$
公开(公告)号：US09870960B2
公开(公告)日：2018-01-16
申请号：US14575134
申请日：2014-12-18
申请人： International Business Machines Corporation
发明人： Donghun Kang , Kriteshwar K. Kohli , Oh-jung Kwon , Anita Madan , Conal E. Murray
IPC分类号： H01L21/00 , H01L21/66 , G01N23/20 , G01R31/265
CPC分类号： H01L22/14 , G01N23/20 , G01N23/207 , G01N2223/0566 , G01N2223/607 , G01N2223/611 , G01R31/2656 , H01L22/12
摘要： A method includes measuring a difference between a primary X-ray diffraction peak and a secondary X-ray diffraction peak, the primary X-ray diffraction peak corresponds to an unstrained portion of a semiconductor substrate and the secondary X-ray diffraction peak corresponds to a strained portion of the semiconductor substrate, the difference between the primary X-ray diffraction peak and the secondary X-ray diffraction peak includes a delta shift peak that corresponds to changes in a crystal lattice caused by a stress applied to the strained portion of the semiconductor substrate, the delta shift peak includes variations in a deep trench capacitance.

6. 发明申请

US20170250073A1 TRENCH METAL INSULATOR METAL CAPACITOR WITH OXYGEN GETTERING LAYER 有权
公开(公告)号：US20170250073A1
公开(公告)日：2017-08-31
申请号：US15595503
申请日：2017-05-15
申请人： International Business Machines Corporation
发明人： Takashi Ando , Eduard A. Cartier , Michael P. Chudzik , Aritra Dasgupta , Herbert L. Ho , Donghun Kang , Rishikesh Krishnan , Vijay Narayanan , Kern Rim
IPC分类号： H01L21/02 , H01L21/20 , H01G4/005 , H01L21/322
CPC分类号： H01L21/02365 , H01G4/005 , H01L21/02178 , H01L21/02617 , H01L21/20 , H01L21/3221 , H01L23/26 , H01L27/10861 , H01L27/1087 , H01L28/60 , H01L28/90 , H01L29/66181 , H01L2924/0002 , H01L2924/00
摘要： A method including forming an oxygen gettering layer on one side of an insulating layer of a deep trench capacitor between the insulating layer and a substrate, the oxygen gettering layer including an aluminum containing compound, and depositing an inner electrode on top of the insulating layer, the inner electrode including a metal.

7. 发明授权

US09653534B2 Trench metal-insulator-metal capacitor with oxygen gettering layer 有权
公开(公告)号：US09653534B2
公开(公告)日：2017-05-16
申请号：US14572974
申请日：2014-12-17
申请人： International Business Machines Corporation
发明人： Takashi Ando , Eduard A. Cartier , Michael P. Chudzik , Aritra Dasgupta , Herbert L. Ho , Donghun Kang , Rishikesh Krishnan , Vijay Narayanan , Kern Rim
IPC分类号： H01L29/66 , H01L49/02 , H01L27/108 , H01L23/26
CPC分类号： H01L21/02365 , H01G4/005 , H01L21/02178 , H01L21/02617 , H01L21/20 , H01L21/3221 , H01L23/26 , H01L27/10861 , H01L27/1087 , H01L28/60 , H01L28/90 , H01L29/66181 , H01L2924/0002 , H01L2924/00
摘要： A method including forming an oxygen gettering layer on one side of an insulating layer of a deep trench capacitor between the insulating layer and a substrate, the oxygen gettering layer including an aluminum containing compound, and depositing an inner electrode on top of the insulating layer, the inner electrode including a metal.

8. 发明申请

US20180090307A1 WAFER STRESS CONTROL AND TOPOGRAPHY COMPENSATION 有权
公开(公告)号：US20180090307A1
公开(公告)日：2018-03-29
申请号：US15278551
申请日：2016-09-28
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Timothy A. Brunner , Oleg Gluschenkov , Donghun Kang , Byeong Y. Kim
IPC分类号： H01L21/02 , H01L21/266 , H01L21/306 , H01L21/66
CPC分类号： H01L21/02016 , H01L21/266 , H01L21/302 , H01L21/30604 , H01L21/30625 , H01L22/12 , H01L22/20
摘要： A method of forming a semiconductor wafer includes generating a stress topography model of a semiconductor wafer with a plurality of desired structures in a desired layout. The method also includes determining a topography and calculating a compensation pattern based upon the topography, wherein the compensation pattern balances wafer topography. The method also includes patterning a semiconductor front side with the plurality of desired microstructures in the desired layout. The method also includes patterning the semiconductor back side with a compensation block mask corresponding to the compensation pattern.

9. 发明申请

US20160043088A1 NON-VOLATILE MEMORY DEVICE EMPLOYING A DEEP TRENCH CAPACITOR 有权
标题翻译：使用深静电电容器的非易失性存储器件
公开(公告)号：US20160043088A1
公开(公告)日：2016-02-11
申请号：US14452762
申请日：2014-08-06
申请人： International Business Machines Corporation
发明人： Eduard A. Cartier , Herbert L. Ho , Donghun Kang
IPC分类号： H01L27/108
CPC分类号： H01L27/1087 , H01L27/1082 , H01L27/10832 , H01L27/10858 , H01L27/10867 , H01L27/10873 , H01L27/10882 , H01L28/91
摘要： A non-volatile memory device with a programmable leakage can be formed employing a trench capacitor. After formation of a deep trench, a metal-insulator-metal stack is formed on surfaces of the deep trench employing a dielectric material that develops leakage path filaments upon application of a programming bias voltage. A set of programming transistors and a leakage readout device can be formed to program, and to read, the state of the leakage level. The non-volatile memory device can be formed concurrently with formation of a dynamic random access memory (DRAM) device by forming a plurality of deep trenches, depositing a stack of an outer metal layer and a node dielectric layer, patterning the node dielectric layer to provide a first node dielectric for each non-volatile memory device that is thinner than a second node dielectric for each DRAM device, and forming an inner metal layer.
摘要翻译：可以使用沟槽电容器形成具有可编程泄漏的非易失性存储器件。在形成深沟槽之后，使用介电材料在深沟槽的表面上形成金属 - 绝缘体 - 金属堆叠，该电介质材料在施加编程偏置电压时产生泄漏路径细丝。可以形成一组编程晶体管和漏电读出装置来编程和读取泄漏电平的状态。非易失性存储器件可以通过形成多个深沟槽，沉积外部金属层和节点电介质层的堆叠而形成动态随机存取存储器（DRAM）器件，同时形成图案化该节点电介质层为每个非易失性存储器件提供第一节点电介质，其比每个DRAM器件的第二节点电介质薄，并且形成内部金属层。

10. 发明授权

US09997348B2 Wafer stress control and topography compensation 有权
公开(公告)号：US09997348B2
公开(公告)日：2018-06-12
申请号：US15278551
申请日：2016-09-28
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Timothy A. Brunner , Oleg Gluschenkov , Donghun Kang , Byeong Y. Kim
IPC分类号： H01L21/02 , H01L21/266 , H01L21/306 , H01L21/66
CPC分类号： H01L21/02016 , H01L21/266 , H01L21/302 , H01L21/30604 , H01L21/30625 , H01L22/12 , H01L22/20
摘要： A method of forming a semiconductor wafer includes generating a stress topography model of a semiconductor wafer with a plurality of desired structures in a desired layout. The method also includes determining a topography and calculating a compensation pattern based upon the topography, wherein the compensation pattern balances wafer topography. The method also includes patterning a semiconductor front side with the plurality of desired microstructures in the desired layout. The method also includes patterning the semiconductor back side with a compensation block mask corresponding to the compensation pattern.

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