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1. 发明申请

US20080190357A1 Susceptor for Expitaxial Reactors and Tool for the Handling Thereof 审中-公开
标题翻译：外延反应堆受体及其处理工具
公开(公告)号：US20080190357A1
公开(公告)日：2008-08-14
申请号：US11911412
申请日：2006-04-05
申请人： Ingemar Karlsson , Gianluca Valente , Danilo Crippa , Franco Preti
发明人： Ingemar Karlsson , Gianluca Valente , Danilo Crippa , Franco Preti
IPC分类号： C30B35/00
CPC分类号： H01L21/68771 , C23C16/4584 , C30B25/12 , C30B35/005 , Y10T117/10
摘要： The present invention relates to a susceptor (3) for epitaxial reactors, comprising a body (31) provided typically with at least one recess (311) for housing substrates on which epitaxial growth is performed; the susceptor (3) comprises a projecting part (32) able to be gripped by a tool (9) so as to be introduced into and extracted from a reaction chamber (12) of an epitaxial reactor.
摘要翻译：本发明涉及用于外延反应器的感受体（3），其包括主体（31），该主体（31）通常设置有用于容纳其上进行外延生长的衬底的至少一个凹部（311）基座（3）包括能够被工具（9）夹紧的突出部分（32），以便被引入并从外延反应器的反应室（12）中提取。

2. 发明申请

US20060081187A1 Susceptor system 有权
标题翻译：受体系统
公开(公告)号：US20060081187A1
公开(公告)日：2006-04-20
申请号：US10538416
申请日：2002-12-10
申请人： Giacomo Maccalli , Olle Kordina , Gianluca Valente , Danilo Crippa , Franco Preti
发明人： Giacomo Maccalli , Olle Kordina , Gianluca Valente , Danilo Crippa , Franco Preti
IPC分类号： C23C16/00
CPC分类号： F27B14/14 , C23C16/46 , C30B25/12 , C30B31/14 , F27B14/061 , F27B17/0025 , H01L21/67109
摘要： The present invention relates to a susceptor system for an apparatus for the treatment of substrates and/or wafers, provided with a treatment chamber (1) delimited by at least two walls and with at least one heating solenoid (9); the susceptor system comprises at least one susceptor element (2, 3) delimited by an outer surface and made of electrically conducting material suitable for being heated by electromagnetic induction; the susceptor element (2, 3) is hollow; a first portion of the outer surface of the susceptor element (2, 3) is suitable for acting as a wall of the treatment chamber (1); a second portion of the outer surface of the susceptor element (2, 3) is suitable for being disposed close to the heating solenoid (9).
摘要翻译：本发明涉及一种用于处理衬底和/或晶片的装置的基座系统，其中设置有由至少两个壁限定的处理室（1）和至少一个加热螺线管（9）; 所述基座系统包括至少一个由外表面限定并由适于通过电磁感应加热的导电材料制成的基座元件（2,3）基座元件（2,3）是中空的; 基座元件（2,3）的外表面的第一部分适合用作处理室（1）的壁; 基座元件（2,3）的外表面的第二部分适于靠近加热螺线管（9）设置。

3. 发明申请

US20100037825A1 DIFFERENTIATED-TEMPERATURE REACTION CHAMBER 审中-公开
标题翻译：差分温度反应室
公开(公告)号：US20100037825A1
公开(公告)日：2010-02-18
申请号：US12159035
申请日：2006-12-18
申请人： Gianluca Valente , Giacomo Nicolao Maccalli , Danilo Crippa , Franco Preti
发明人： Gianluca Valente , Giacomo Nicolao Maccalli , Danilo Crippa , Franco Preti
IPC分类号： C30B25/10 , H05B6/02 , F27B14/06
CPC分类号： C23C16/46 , C30B23/06 , C30B25/10 , C30B35/00 , F27B14/061 , F27B17/0025 , F27D1/0006
摘要： The present invention relates to a reaction chamber (1) for an epitaxial reactor, provided with walls delimiting an inner cavity (10), specifically a lower wall (3) and an upper wall (2) and at least two side walls (4,5); the lower wall (3) and the upper wall (2) have different configurations and/or are made of different materials; this allows the lower wall (3) to be heated to a higher temperature than the upper wall (2). The present invention also relates to a method for heating a reaction chamber.
摘要翻译：本发明涉及一种用于外延反应器的反应室（1），其设有限定内腔（10），特别是下壁（3）和上壁（2）的壁和至少两个侧壁（4， 5）; 下壁（3）和上壁（2）具有不同的构造和/或由不同的材料制成; 这允许下壁（3）被加热到比上壁（2）更高的温度。本发明还涉及加热反应室的方法。

4. 发明申请

US20100031885A1 Reactor For Growing Crystals 审中-公开
标题翻译：反应堆生长晶体
公开(公告)号：US20100031885A1
公开(公告)日：2010-02-11
申请号：US12515516
申请日：2007-11-11
申请人： Claudio Pelosi , Vittorio Pozzetti , Natale Speciale , Gianluca Valente , Sonia De Angelis , Danilo Crippa , Franco Preti
发明人： Claudio Pelosi , Vittorio Pozzetti , Natale Speciale , Gianluca Valente , Sonia De Angelis , Danilo Crippa , Franco Preti
IPC分类号： C30B25/10 , C30B25/08
CPC分类号： C23C16/325 , C23C16/303 , C30B25/10 , C30B29/36 , C30B29/403 , C30B35/00
摘要： The present invention relates to a reactor (1) for growing crystals of a material, in particular of silicon carbide or a third-group nitride; it comprises a chamber (2) divided into a first zone (21) and a second zone (22), said division being accomplished through a dividing wall (3) having at least one opening (31) which puts said first and second zones (21,22) in communication with each other, injection means (41,42) adapted to supply said first zone (21) with at least one precursor gas of said material, exhaust means (5) adapted to discharge exhaust gases from said second zone (22), support means (6) located in said second zone (22) and adapted to support a growing crystal, and heating means (71,72) adapted to keep said first and second zones (21,22) at a temperature between 2000° C. and 2600° C.
摘要翻译：本发明涉及用于生长材料的晶体的反应器（1），特别是碳化硅或第三族氮化物的晶体; 它包括分为第一区域（21）和第二区域（22）的腔室（2），所述分隔件通过具有至少一个开口（31）的分隔壁（3）来实现，所述至少一个开口（31）将所述第一和第二区域 21,22）彼此连通，适于向所述第一区域（21）供应所述材料的至少一种前体气体的喷射装置（41,42），适于从所述第二区域排出废气的排气装置（5）（22），位于所述第二区域（22）中并适于支撑生长晶体的支撑装置（6）和适于将所述第一和第二区域（21,22）保持在第二区域（21,22）之间的温度 2000℃和2600℃

5. 发明授权

US07488922B2 Susceptor system 有权
标题翻译：受体系统
公开(公告)号：US07488922B2
公开(公告)日：2009-02-10
申请号：US10538416
申请日：2002-12-10
申请人： Giacomo Nicolao Maccalli , Olle Kordina , Gianluca Valente , Danilo Crippa , Franco Preti
发明人： Giacomo Nicolao Maccalli , Olle Kordina , Gianluca Valente , Danilo Crippa , Franco Preti
IPC分类号： H05B6/10 , C23C16/00
CPC分类号： F27B14/14 , C23C16/46 , C30B25/12 , C30B31/14 , F27B14/061 , F27B17/0025 , H01L21/67109
摘要： The present invention relates to a susceptor system for an apparatus for the treatment of substrates and/or wafers, provided with a treatment chamber (1) delimited by at least two walls and with at least one heating solenoid (9); the susceptor system comprises at least one susceptor element (2, 3) delimited by an outer surface and made of electrically conducting material suitable for being heated by electromagnetic induction; the susceptor element (2, 3) is hollow; a first portion of the outer surface of the susceptor element (2, 3) is suitable for acting as a wall of the treatment chamber (1); a second portion of the outer surface of the susceptor element (2, 3) is suitable for being disposed close to the heating solenoid (9).
摘要翻译：本发明涉及一种用于处理衬底和/或晶片的装置的基座系统，其中设置有由至少两个壁限定的处理室（1）和至少一个加热螺线管（9）; 所述基座系统包括至少一个由外表面限定并由适于通过电磁感应加热的导电材料制成的基座元件（2,3）基座元件（2,3）是中空的; 基座元件（2,3）的外表面的第一部分适合用作处理室（1）的壁; 基座元件（2,3）的外表面的第二部分适于靠近加热螺线管（9）设置。

6. 发明申请

US20070264807A1 Cleaining Process and Operating Process for a Cvd Reactor 审中-公开
标题翻译： Cvd反应堆的清洗过程和操作过程
公开(公告)号：US20070264807A1
公开(公告)日：2007-11-15
申请号：US11660689
申请日：2005-07-12
申请人： Stefano Leone , Marco Mauceri , Giuseppe Abbondanza , Danilo Crippa , Gianluca Valente , Maurizio Masi , Franco Preti
发明人： Stefano Leone , Marco Mauceri , Giuseppe Abbondanza , Danilo Crippa , Gianluca Valente , Maurizio Masi , Franco Preti
IPC分类号： H01L21/20 , B08B7/00 , C23C16/00 , C23C16/32 , C23C16/44
CPC分类号： B08B7/00 , C23C16/4404 , C23C16/4405 , C23C16/46
摘要： The present invention relates to a process for cleaning the reaction chamber (12) of a CVD reactor, comprising the steps of heating the chamber walls to a suitable temperature and introducing a gas flow into the chamber, this cleaning process may be advantageously used within an operating process of a CVD reactor for depositing semiconductor material onto substrates inside a chamber; this operating process envisages a growth process comprising the sequential and cyclical loading of the substrates into the chamber (12), deposition of semiconductor material onto the substrates and unloading of the substrates from the chamber (12); after unloading a process for cleaning the chamber (12) is performed. The invention also relates to process for cleaning the entire CVD reactor, which envisages, together with heating, the presence of chemical etching components in the gas flow.
摘要翻译：本发明涉及一种用于清洁CVD反应器的反应室（12）的方法，包括以下步骤：将室壁加热到合适的温度并将气流引入室中，该清洁过程可有利地用于用于将半导体材料沉积在室内的衬底上的CVD反应器的操作过程; 该操作过程设想成长过程，其包括将衬底顺序地循环加载到腔室（12）中，将半导体材料沉积到衬底上并从衬套（12）卸载衬底; 在卸载用于清洁室（12）的过程之后。本发明还涉及用于清洁整个CVD反应器的方法，该反应器设想加热气流中化学蚀刻组分的存在。

7. 发明申请

US20060283389A1 System for growing silicon carbide crystals 审中-公开
标题翻译：生长碳化硅晶体的系统
公开(公告)号：US20060283389A1
公开(公告)日：2006-12-21
申请号：US11116145
申请日：2005-04-27
申请人： GianLuca Valente , Vittorio Pozzetti , Olle Kordina , Maurizio Masi , Natale Speciale , Danilo Crippa , Franco Preti
发明人： GianLuca Valente , Vittorio Pozzetti , Olle Kordina , Maurizio Masi , Natale Speciale , Danilo Crippa , Franco Preti
IPC分类号： C23C16/00
CPC分类号： C30B29/36 , C30B25/00
摘要： A system for growing silicon carbide crystals on substrates is described and comprises a chamber (1) which extends along an axis, wherein the chamber (1) has separate input means (2, ;) for gases containing carbon and for gases containing silicon, substrate support means (4) disposed in a first end zone (ZI) of the chambe, exhaust output means (5) disposed in the vicinity of the support means (4), and heating means adapted for beating the chamber (1) to a temperature greater than 1800° C.′; the input means (2) for gases containing silicon are positioned, shaped and dimensioned in a manner such that the gases containing silicon enter in a second end zone (Z2) of the chamber; the input means (3) for gases containing carbon are positioned shaped and dimensioned in a manner such that the carbon and tire silicon come substantially into contact in a central zone (ZC) of the chamber remote both from the first end zone (ZI) and from the second end zone (Z2).
摘要翻译：描述了一种用于在衬底上生长碳化硅晶体的系统，并且包括沿轴线延伸的腔室（1），其中腔室（1）具有用于含有碳和含硅气体的衬底的分离的输入装置（2）;衬底设置在所述凹坑的第一端部区域（ZI）中的支撑装置（4），设置在所述支撑装置（4）附近的排气输出装置（5）;以及适于将所述腔室（1）击打到温度大于1800°C' 用于含硅气体的输入装置（2）定位，成形和尺寸确定，使得含硅气体进入腔室的第二端区（Z 2）; 用于含碳气体的输入装置（3）的形状和尺寸设置成使得碳和轮胎硅基本上接触在腔室的中心区域（ZC）中，远离第一端区域（ZI）和从第二端区（Z 2）。

8. 发明授权

US07615121B2 Susceptor system 有权
标题翻译：受体系统
公开(公告)号：US07615121B2
公开(公告)日：2009-11-10
申请号：US10538529
申请日：2002-12-10
申请人： Giacomo Nicolao Maccalli , Gianluca Valente , Olle Kordina , Franco Preti , Danilo Crippa
发明人： Giacomo Nicolao Maccalli , Gianluca Valente , Olle Kordina , Franco Preti , Danilo Crippa
IPC分类号： C23C16/46 , H01L21/00
CPC分类号： C30B25/10 , C23C16/4584 , C23C16/4586 , C23C16/46 , C30B25/12 , C30B31/14 , C30B35/00 , F27B14/061 , H01L21/67109 , H01L21/6719 , H01L21/67784 , H01L21/6838 , H01L21/68714
摘要： The present invention relates to a susceptor system for an apparatus of the type adapted to treat substrates and/or wafers; the susceptor system is provided with a cavity (1) which acts as a chamber for the treatment of the substrates and/or wafers and which extends in a longitudinal direction and is delimited by an upper wall (2), by a lower wall (3), by a right-hand side wall (4), and by a left-hand side wall (5); the upper wall (2) is constituted by at least one piece of electrically conducting material suitable for being heated by electromagnetic induction; the lower wall (3) is constituted by at least one piece of electrically conducting material suitable for being heated by electromagnetic induction; the right-hand side wall (4) is constituted by at least one piece of inert, refractory and electrically insulating material; the left-hand side wall (5) is constituted by at least one piece of inert, refractory and electrically insulating material; the piece of the upper wall (2) is thus electrically well insulated from the piece of the lower wall (3).
摘要翻译：本发明涉及适用于处理衬底和/或晶片的类型的设备的基座系统; 基座系统设置有空腔（1），其用作用于处理基板和/或晶片的室，并且其在纵向方向上延伸并且由上壁（2）由下壁（3）限定），通过右侧壁（4）和左侧壁（5）; 上壁（2）由适于通过电磁感应加热的至少一片导电材料构成; 下壁（3）由适于通过电磁感应加热的至少一片导电材料构成; 右侧壁（4）由至少一片惰性，难熔和电绝缘材料构成; 左侧壁（5）由至少一片惰性，难熔和电绝缘材料构成; 因此上壁（2）的一部分与下壁（3）的电极电绝缘良好。

9. 发明授权

US07387687B2 Support system for a treatment apparatus 有权
标题翻译：治疗仪器支援系统
公开(公告)号：US07387687B2
公开(公告)日：2008-06-17
申请号：US10538547
申请日：2003-06-11
申请人： Natale Speciale , Gianluca Valente , Danilo Crippa , Franco Preti
发明人： Natale Speciale , Gianluca Valente , Danilo Crippa , Franco Preti
IPC分类号： C23C16/00 , H01L16/00
CPC分类号： C30B25/10 , C23C16/4584 , C23C16/4586 , C23C16/46 , C30B25/12 , C30B31/14 , C30B35/00 , F27B14/061 , H01L21/67109 , H01L21/6719 , H01L21/67784 , H01L21/6838 , H01L21/68714
摘要： A system for an apparatus of the type adapted to treat substrates and/or wafers is described and comprises a stationary base element and a movable support for at least one substrate or at least one wafer, the support being rotatable above the element about a stationary axis; a chamber, and at least one duct is provided for the admission of at least one gas-flow to the chamber in order to raise the support; the system also comprises means for converting the flow of gas into the chamber into rotation of the support.
摘要翻译：描述了适用于处理衬底和/或晶片的类型的装置的系统，并且包括用于至少一个衬底或至少一个晶片的固定基座元件和可移动支撑件，所述支撑件可绕所述元件围绕固定轴线旋转 ; 一个腔室和至少一个导管被提供用于容纳至少一个气流到腔室以便升高支撑件; 该系统还包括用于将气体流入腔室的装置转换成支撑件的旋转装置。

10. 发明申请

US20060118048A1 Susceptor system 有权
标题翻译：受体系统
公开(公告)号：US20060118048A1
公开(公告)日：2006-06-08
申请号：US10538529
申请日：2002-12-10
申请人： Giacomo Maccalli , Gianluca Valente , Olle Kordina , Franco Preti , Danilo Crippa
发明人： Giacomo Maccalli , Gianluca Valente , Olle Kordina , Franco Preti , Danilo Crippa
IPC分类号： C23C16/00
CPC分类号： C30B25/10 , C23C16/4584 , C23C16/4586 , C23C16/46 , C30B25/12 , C30B31/14 , C30B35/00 , F27B14/061 , H01L21/67109 , H01L21/6719 , H01L21/67784 , H01L21/6838 , H01L21/68714
摘要： The present invention relates to a susceptor system for an apparatus of the type adapted to treat substrates and/or wafers; the susceptor system is provided with a cavity (1) which acts as a chamber for the treatment of the substrates and/or wafers and which extends in a longitudinal direction and is delimited by an upper wall (2), by a lower wall (3), by a right-hand side wall (4), and by a left-hand side wall (5); the upper wall (2) is constituted by at least one piece of electrically conducting material suitable for being heated by electromagnetic induction; the lower wall (3) is constituted by at least one piece of electrically conducting material suitable for being heated by electromagnetic induction; the right-hand side wall (4) is constituted by at least one piece of inert, refractory and electrically insulating material; the left-hand side wall (5) is constituted by at least one piece of inert, refractory and electrically insulating material; the piece of the upper wall (2) is thus electrically well insulated from the piece of the lower wall (3).
摘要翻译：本发明涉及适用于处理衬底和/或晶片的类型的设备的基座系统; 基座系统设置有空腔（1），其用作用于处理基板和/或晶片的室，并且其在纵向方向上延伸并且由上壁（2）由下壁（3）限定），通过右侧壁（4）和左侧壁（5）; 上壁（2）由适于通过电磁感应加热的至少一片导电材料构成; 下壁（3）由适于通过电磁感应加热的至少一片导电材料构成; 右侧壁（4）由至少一片惰性，难熔和电绝缘材料构成; 左侧壁（5）由至少一片惰性，难熔和电绝缘材料构成; 因此上壁（2）的一部分与下壁（3）的电极电绝缘良好。

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