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1. 发明申请

US20120027646A1 Reaction Chamber of an Epitaxial Reactor and Reactor That Uses Said Chamber 有权
标题翻译：使用所述室的外延反应器和反应器的反应室
公开(公告)号：US20120027646A1
公开(公告)日：2012-02-02
申请号：US13259818
申请日：2010-04-16
申请人： Srinivas Yarlagadda , Natale Speciale , Franco Preti , Mario Preti
发明人： Srinivas Yarlagadda , Natale Speciale , Franco Preti , Mario Preti
IPC分类号： B01D9/00
CPC分类号： C30B25/08 , C23C16/46 , C30B25/10 , C30B29/06 , C30B29/08 , C30B29/36 , C30B29/403 , C30B29/406 , C30B35/00
摘要： The present invention relates to a reaction chamber of an epitaxial reactor that essentially consists of a quartz piece; the quartz piece comprises a quartz piece portion (1) having an internal cavity (2) defined by walls (1A, 1B, 1C, 1D); the cavity (2) comprises a reaction and deposition zone (3) of the epitaxial reactor; the zone (3) is adapted to house a susceptor (4) to be heated therein; the reaction chamber also comprises a quartz component (5) arranged close to said walls (1A, 1B, 1C, 1D) in such a manner as to form a counterwall and to be a wall of said zone (3).
摘要翻译：本发明涉及一种基本上由石英片组成的外延反应器的反应室; 石英片包括具有由壁（1A，1B，1C，1D）限定的内腔（2）的石英片部分（1）; 空腔（2）包括外延反应器的反应和沉积区（3）; 所述区域（3）适于容纳待加热的基座（4）; 反应室还包括以形成对置壁并且成为所述区域（3）的壁的方式布置在所述壁（1A，1B，1C，1D）附近的石英组件（5）。

2. 发明申请

US20060054091A1 Support system for a treatment apparatus 有权
标题翻译：治疗仪器支援系统
公开(公告)号：US20060054091A1
公开(公告)日：2006-03-16
申请号：US10538547
申请日：2003-06-11
申请人： Natale Speciale , Valente Gianluca
发明人： Natale Speciale , Valente Gianluca
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： C30B25/10 , C23C16/4584 , C23C16/4586 , C23C16/46 , C30B25/12 , C30B31/14 , C30B35/00 , F27B14/061 , H01L21/67109 , H01L21/6719 , H01L21/67784 , H01L21/6838 , H01L21/68714
摘要： A system for an apparatus of the type adapted to treat substrates and/or wafers is described and comprises a stationary base element (600) and a movable support (610) for at least one substrate or at least one wafer, the support being rotatable above the element (600) about a stationary axis; a chamber (610), and at least one duct (608) is provided for the admission of at least one gas-flow to the chamber (604) in order to raise the support (610); the system also comprises means (605) for converting the flow of gas into the chamber (604) into rotation of the support (610).
摘要翻译：描述适用于处理衬底和/或晶片的类型的装置的系统，并且包括用于至少一个衬底或至少一个晶片的固定基座元件（600）和可移动支撑件（610），所述支撑件可以在所述元件（600）围绕固定轴线; 提供腔室（610）和至少一个管道（608），用于允许至少一个气流进入腔室（604），以便升高支撑件（610）; 该系统还包括用于将气体流进入室（604）的装置（605）转换成支撑件（610）的旋转。

3. 发明授权

US07387687B2 Support system for a treatment apparatus 有权
标题翻译：治疗仪器支援系统
公开(公告)号：US07387687B2
公开(公告)日：2008-06-17
申请号：US10538547
申请日：2003-06-11
申请人： Natale Speciale , Gianluca Valente , Danilo Crippa , Franco Preti
发明人： Natale Speciale , Gianluca Valente , Danilo Crippa , Franco Preti
IPC分类号： C23C16/00 , H01L16/00
CPC分类号： C30B25/10 , C23C16/4584 , C23C16/4586 , C23C16/46 , C30B25/12 , C30B31/14 , C30B35/00 , F27B14/061 , H01L21/67109 , H01L21/6719 , H01L21/67784 , H01L21/6838 , H01L21/68714
摘要： A system for an apparatus of the type adapted to treat substrates and/or wafers is described and comprises a stationary base element and a movable support for at least one substrate or at least one wafer, the support being rotatable above the element about a stationary axis; a chamber, and at least one duct is provided for the admission of at least one gas-flow to the chamber in order to raise the support; the system also comprises means for converting the flow of gas into the chamber into rotation of the support.
摘要翻译：描述了适用于处理衬底和/或晶片的类型的装置的系统，并且包括用于至少一个衬底或至少一个晶片的固定基座元件和可移动支撑件，所述支撑件可绕所述元件围绕固定轴线旋转 ; 一个腔室和至少一个导管被提供用于容纳至少一个气流到腔室以便升高支撑件; 该系统还包括用于将气体流入腔室的装置转换成支撑件的旋转装置。

4. 发明申请

US20060283389A1 System for growing silicon carbide crystals 审中-公开
标题翻译：生长碳化硅晶体的系统
公开(公告)号：US20060283389A1
公开(公告)日：2006-12-21
申请号：US11116145
申请日：2005-04-27
申请人： GianLuca Valente , Vittorio Pozzetti , Olle Kordina , Maurizio Masi , Natale Speciale , Danilo Crippa , Franco Preti
发明人： GianLuca Valente , Vittorio Pozzetti , Olle Kordina , Maurizio Masi , Natale Speciale , Danilo Crippa , Franco Preti
IPC分类号： C23C16/00
CPC分类号： C30B29/36 , C30B25/00
摘要： A system for growing silicon carbide crystals on substrates is described and comprises a chamber (1) which extends along an axis, wherein the chamber (1) has separate input means (2, ;) for gases containing carbon and for gases containing silicon, substrate support means (4) disposed in a first end zone (ZI) of the chambe, exhaust output means (5) disposed in the vicinity of the support means (4), and heating means adapted for beating the chamber (1) to a temperature greater than 1800° C.′; the input means (2) for gases containing silicon are positioned, shaped and dimensioned in a manner such that the gases containing silicon enter in a second end zone (Z2) of the chamber; the input means (3) for gases containing carbon are positioned shaped and dimensioned in a manner such that the carbon and tire silicon come substantially into contact in a central zone (ZC) of the chamber remote both from the first end zone (ZI) and from the second end zone (Z2).
摘要翻译：描述了一种用于在衬底上生长碳化硅晶体的系统，并且包括沿轴线延伸的腔室（1），其中腔室（1）具有用于含有碳和含硅气体的衬底的分离的输入装置（2）;衬底设置在所述凹坑的第一端部区域（ZI）中的支撑装置（4），设置在所述支撑装置（4）附近的排气输出装置（5）;以及适于将所述腔室（1）击打到温度大于1800°C' 用于含硅气体的输入装置（2）定位，成形和尺寸确定，使得含硅气体进入腔室的第二端区（Z 2）; 用于含碳气体的输入装置（3）的形状和尺寸设置成使得碳和轮胎硅基本上接触在腔室的中心区域（ZC）中，远离第一端区域（ZI）和从第二端区（Z 2）。

5. 发明申请

US20060275104A1 Support system for treatment apparatuses 审中-公开
标题翻译：治疗仪器支援系统
公开(公告)号：US20060275104A1
公开(公告)日：2006-12-07
申请号：US10552937
申请日：2004-06-09
申请人： Natale Speciale , Gianluca Valente , Danilo Crippa
发明人： Natale Speciale , Gianluca Valente , Danilo Crippa
IPC分类号： B65G49/07
CPC分类号： C30B25/12
摘要： A support system (1) for an apparatus of the type able to treat substrates and/or wafers is described, said system comprising a fixed base element (10) having a substantially flat surface in which a substantially cylindrical seat (11) with a substantially flat bottom is formed, and a movable support element (20) having a substantially disc-shaped form, being housed inside the seat (11), being able to rotate about the axis of the seat (11) and having a substantially flat upper side provided with at least one cavity (21) for a substrate or wafer and a substantially flat bottom side; one or more passages (12) for one or more gas flows are provided, which passages (12) emerge inside the seat (11) in directions which are inclined and preferably skew with respect to its axis, in such a way as to lift and rotate the support element (20).
摘要翻译：描述了一种用于能够处理衬底和/或晶片的类型的设备的支撑系统（1），所述系统包括具有基本平坦表面的固定基座元件（10），其中基本上圆柱形的座（11）具有基本上形成有平底部，并且容纳在所述座部（11）内部的具有基本上圆盘形状的可移动支撑元件（20）能够围绕所述座椅（11）的轴线旋转并且具有基本平坦的上侧设置有用于衬底或晶片的至少一个空腔（21）和基本平坦的底侧; 提供一个或多个用于一个或多个气体流的通道（12），所述通道（12）以相对于其轴线倾斜并且优选地倾斜的方向在座椅（11）内部出现，以便提升和旋转支撑元件（20）。

6. 发明授权

US09382642B2 Reaction chamber of an epitaxial reactor and reactor that uses said chamber 有权
标题翻译：使用所述室的外延反应器和反应器的反应室
公开(公告)号：US09382642B2
公开(公告)日：2016-07-05
申请号：US13259818
申请日：2010-04-16
申请人： Srinivas Yarlagadda , Natale Speciale , Franco Preti , Mario Preti
发明人： Srinivas Yarlagadda , Natale Speciale , Franco Preti , Mario Preti
IPC分类号： C30B35/00 , C30B25/08 , C23C16/46 , C30B25/10 , C30B29/06 , C30B29/08 , C30B29/36 , C30B29/40
CPC分类号： C30B25/08 , C23C16/46 , C30B25/10 , C30B29/06 , C30B29/08 , C30B29/36 , C30B29/403 , C30B29/406 , C30B35/00
摘要： The present invention relates to a reaction chamber of an epitaxial reactor that essentially consists of a quartz piece; the quartz piece comprises a quartz piece portion (1) having an internal cavity (2) defined by walls (1A, 1B, 1C, 1D); the cavity (2) comprises a reaction and deposition zone (3) of the epitaxial reactor; the zone (3) is adapted to house a susceptor (4) to be heated therein; the reaction chamber also comprises a quartz component (5) arranged close to said walls (1A, 1B, 1C, 1D) in such a manner as to form a counterwall and to be a wall of said zone (3).
摘要翻译：本发明涉及一种基本上由石英片组成的外延反应器的反应室; 石英片包括具有由壁（1A，1B，1C，1D）限定的内腔（2）的石英片部分（1）; 空腔（2）包括外延反应器的反应和沉积区（3）; 所述区域（3）适于容纳待加热的基座（4）; 反应室还包括以形成对置壁并且成为所述区域（3）的壁的方式布置在所述壁（1A，1B，1C，1D）附近的石英组件（5）。

7. 发明申请

US20100031885A1 Reactor For Growing Crystals 审中-公开
标题翻译：反应堆生长晶体
公开(公告)号：US20100031885A1
公开(公告)日：2010-02-11
申请号：US12515516
申请日：2007-11-11
申请人： Claudio Pelosi , Vittorio Pozzetti , Natale Speciale , Gianluca Valente , Sonia De Angelis , Danilo Crippa , Franco Preti
发明人： Claudio Pelosi , Vittorio Pozzetti , Natale Speciale , Gianluca Valente , Sonia De Angelis , Danilo Crippa , Franco Preti
IPC分类号： C30B25/10 , C30B25/08
CPC分类号： C23C16/325 , C23C16/303 , C30B25/10 , C30B29/36 , C30B29/403 , C30B35/00
摘要： The present invention relates to a reactor (1) for growing crystals of a material, in particular of silicon carbide or a third-group nitride; it comprises a chamber (2) divided into a first zone (21) and a second zone (22), said division being accomplished through a dividing wall (3) having at least one opening (31) which puts said first and second zones (21,22) in communication with each other, injection means (41,42) adapted to supply said first zone (21) with at least one precursor gas of said material, exhaust means (5) adapted to discharge exhaust gases from said second zone (22), support means (6) located in said second zone (22) and adapted to support a growing crystal, and heating means (71,72) adapted to keep said first and second zones (21,22) at a temperature between 2000° C. and 2600° C.
摘要翻译：本发明涉及用于生长材料的晶体的反应器（1），特别是碳化硅或第三族氮化物的晶体; 它包括分为第一区域（21）和第二区域（22）的腔室（2），所述分隔件通过具有至少一个开口（31）的分隔壁（3）来实现，所述至少一个开口（31）将所述第一和第二区域 21,22）彼此连通，适于向所述第一区域（21）供应所述材料的至少一种前体气体的喷射装置（41,42），适于从所述第二区域排出废气的排气装置（5）（22），位于所述第二区域（22）中并适于支撑生长晶体的支撑装置（6）和适于将所述第一和第二区域（21,22）保持在第二区域（21,22）之间的温度 2000℃和2600℃

8. 发明申请

US20080202424A1 Device For Introducing Reaction Gases Into A Reaction Chamber And Epitaxial Reactor Which Uses Said Device 审中-公开
标题翻译：将反应气体引入使用所述装置的反应室和外延反应器的装置
公开(公告)号：US20080202424A1
公开(公告)日：2008-08-28
申请号：US11914000
申请日：2006-05-23
申请人： Vittorio Pozzetti , Natale Speciale , Gianluca Valente , Franco Preti
发明人： Vittorio Pozzetti , Natale Speciale , Gianluca Valente , Franco Preti
IPC分类号： C23C16/00
CPC分类号： B01J12/02 , B01J4/002 , B01J19/26 , B01J2219/00119
摘要： The present invention relates to a device (1) for introducing reaction gases into a reaction chamber of an epitaxial reactor; the device (1) comprises a gas supply pipe (2) and a cooling member (3) situated at one end of the supply pipe (2) and able to cool the supply pipe (2) and thereby the gas flowing inside it.
摘要翻译：本发明涉及一种用于将反应气体引入外延反应器的反应室的装置（1）; 设备（1）包括位于供应管（2）一端的气体供应管（2）和冷却件（3），并可冷却供应管（2），从而使其内流动的气体。

9. 发明申请

US20070295275A1 Epitaxial Reactor Cooling Method and Reactor Cooled Thereby 审中-公开
标题翻译：外延反应器冷却方法和反应器由此冷却
公开(公告)号：US20070295275A1
公开(公告)日：2007-12-27
申请号：US11661581
申请日：2004-10-01
申请人： Vincenzo Ogliari , Giuseppe Tarenzi , Marco Puglisi , Natale Speciale , Franco Preti
发明人： Vincenzo Ogliari , Giuseppe Tarenzi , Marco Puglisi , Natale Speciale , Franco Preti
IPC分类号： C23C16/52
CPC分类号： C23C16/44 , C23C16/4411 , C30B25/10
摘要： The invention relates to a method for cooling the walls of the reaction chamber (2) of a reactor for chemical vapour deposition. The method consists in selectively cooling with water at least one predetermined zone of the wall of the chamber (2), to remove a different heat flow compared with the adjacent zones so as to obtain substantially uniform temperature distribution of the reaction chamber (2). In a preferred embodiment, the selectively-cooled zone is the zone above the susceptor (5) and is delimited by two ribs (8, 9). The invention also includes a reactor and a reaction chamber (2) for carrying out the cooling method.
摘要翻译：本发明涉及一种用于冷却用于化学气相沉积的反应器的反应室（2）的壁的方法。该方法包括：与水相连通，选择性地冷却腔室（2）的壁的至少一个预定区域，以与相邻区域相比去除不同的热流，从而获得反应室（2）的基本均匀的温度分布。在优选实施例中，选择性冷却的区域是基座（5）上方的区域并且由两个肋（8,9）限定。本发明还包括用于进行冷却方法的反应器和反应室（2）。

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