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    • 4. 发明申请
    • System for growing silicon carbide crystals
    • 生长碳化硅晶体的系统
    • US20060283389A1
    • 2006-12-21
    • US11116145
    • 2005-04-27
    • GianLuca ValenteVittorio PozzettiOlle KordinaMaurizio MasiNatale SpecialeDanilo CrippaFranco Preti
    • GianLuca ValenteVittorio PozzettiOlle KordinaMaurizio MasiNatale SpecialeDanilo CrippaFranco Preti
    • C23C16/00
    • C30B29/36C30B25/00
    • A system for growing silicon carbide crystals on substrates is described and comprises a chamber (1) which extends along an axis, wherein the chamber (1) has separate input means (2, ;) for gases containing carbon and for gases containing silicon, substrate support means (4) disposed in a first end zone (ZI) of the chambe, exhaust output means (5) disposed in the vicinity of the support means (4), and heating means adapted for beating the chamber (1) to a temperature greater than 1800° C.′; the input means (2) for gases containing silicon are positioned, shaped and dimensioned in a manner such that the gases containing silicon enter in a second end zone (Z2) of the chamber; the input means (3) for gases containing carbon are positioned shaped and dimensioned in a manner such that the carbon and tire silicon come substantially into contact in a central zone (ZC) of the chamber remote both from the first end zone (ZI) and from the second end zone (Z2).
    • 描述了一种用于在衬底上生长碳化硅晶体的系统,并且包括沿轴线延伸的腔室(1),其中腔室(1)具有用于含有碳和含硅气体的衬底的分离的输入装置(2);衬底 设置在所述凹坑的第一端部区域(ZI)中的支撑装置(4),设置在所述支撑装置(4)附近的排气输出装置(5);以及适于将所述腔室(1)击打到温度 大于1800°C' 用于含硅气体的输入装置(2)定位,成形和尺寸确定,使得含硅气体进入腔室的第二端区(Z 2); 用于含碳气体的输入装置(3)的形状和尺寸设置成使得碳和轮胎硅基本上接触在腔室的中心区域(ZC)中,远离第一端区域(ZI)和 从第二端区(Z 2)。