专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06404579B1 Current bias voltage sense single ended preamplifier 有权
标题翻译：电流偏置电压检测单端前置放大器
公开(公告)号：US06404579B1
公开(公告)日：2002-06-11
申请号：US09699009
申请日：2000-10-27
申请人： Indumini Ranmuthu , Davy H Choi , Sami Kiriaki , Yong Han
发明人： Indumini Ranmuthu , Davy H Choi , Sami Kiriaki , Yong Han
IPC分类号： G11B503
CPC分类号： G11B5/02 , G11B5/012 , G11B2005/0016 , G11B2005/0018 , H03F1/56
摘要： Preamplifiers are used in hard disk drive applications to read data stored on magnetic disk. Current bias current sense preamplifiers have a problem with bandwidth rolloff due to relatively high inductance. Voltage sense preamplifiers have a problem with peaking due to input capacitance. An improved current bias voltage sense preamplifier inserts a PMOS transistor M3 between the Rmr head and the bipolar transistor Q0. The PMOS transistor M3 and the bipolar transistor Q0 form a high impedance voltage sense preamplifier. Biasing of the MR head is performed transistors M6 and M7 that mirror the current supplied by the current digital to analog converter into the MR head. Hence, the preamplifier is also of the current bias type. Peaking is controlled through a programmable current in an input capacitance cancellation circuit 30.
摘要翻译：前置放大器用于硬盘驱动器应用程序以读取存储在磁盘上的数据。电流偏置电流检测前置放大器由于相对较高的电感而带宽滚降的问题。电压感应前置放大器由于输入电容而导致峰值问题。改进的电流偏置电压感测前置放大器在Rmr头和双极晶体管Q0之间插入PMOS晶体管M3。 PMOS晶体管M3和双极晶体管Q0形成高阻抗电压感测前置放大器。执行MR磁头的偏置，将由当前数模转换器提供的电流镜像到MR磁头中的晶体管M6和M7。因此，前置放大器也是电流偏置型。峰值通过输入电容消除电路30中的可编程电流来控制。

IPRDB

热门服务

关于我们

友情链接

联系方式