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    • 1. 发明申请
    • Pseudo-nonvolatile direct-tunneling floating-gate device
    • 伪非易失性直接隧道浮栅器件
    • US20040021166A1
    • 2004-02-05
    • US10356645
    • 2003-01-31
    • Impinj, Inc., a Delaware Corporation
    • John D. HydeTodd E. HumesChristopher J. DiorioCarver A. Mead
    • H01L029/76
    • H01L27/11521H01L27/11519H01L27/11558H01L29/7883
    • A semiconductor device is provided that uses a floating gate to store analog- and digital-valued information for periods of time measured in milliseconds to hours. Charge is added to and/or removed from the floating gate by means of direct electron tunneling through the surrounding insulator, with the insulator typically being thin enough such that appreciable tunneling occurs with an insulator voltage smaller than the difference in electron affinities between the semiconductor and the insulator and/or between the floating gate and the insulator. The stored information is refreshed or updated as needed. In many applications, the stored information can be refreshed without interrupting normal circuit operation. Adding and removing charge to or from the floating gate may be performed using separate circuit inputs, to tailor the performance and response of the floating-gate device. There is no need to use a control gate in the floating-gate structures disclosed herein.
    • 提供了一种半导体器件,其使用浮动栅极来存储以毫秒到数小时为单位的时间段的模拟和数字值信息。 通过直接电子隧道穿过周围的绝缘体将电荷添加到浮动栅极和/或从浮动栅极去除,绝缘体通常足够薄,使得明显的隧道发生,其绝缘体电压小于半导体和 绝缘体和/或浮动栅极和绝缘体之间。 存储的信息根据需要刷新或更新。 在许多应用中,存储的信息可以刷新而不中断正常的电路操作。 可以使用单独的电路输入来对浮动栅极添加和去除电荷或从浮动栅极去除电荷,以调整浮动栅极器件的性能和响应。 在本文公开的浮动栅极结构中不需要使用控制栅极。