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    • 6. 发明授权
    • Electron beam writing method, electron beam writing apparatus and semiconductor device manufacturing method
    • 电子束写入方法,电子束写入装置和半导体器件的制造方法
    • US07368737B2
    • 2008-05-06
    • US11409987
    • 2006-04-25
    • Ryoichi InanamiTetsuro Nakasugi
    • Ryoichi InanamiTetsuro Nakasugi
    • H01J37/08
    • H01J37/3174B82Y10/00B82Y40/00
    • An electron beam writing method is disclosed, which includes preparing electron beam writing data structured from writing pattern data expressed by both data of VSB shots which are units of shaping beams at the time of carrying out writing a pattern and data of CP shots serving as bases of a repeating pattern, and CP aperture data into which identification numbers IDs and opening positions of respective openings of a CP aperture having openings for VSB shots and openings for CP shots are described, inputting the electron beam writing data to an electron beam writing apparatus, and expanding the electron beam writing data into data of the respective shots defined in the electron beam writing data, determining irradiation times of the respective expanded shots while correcting shot positions, and outputting control signals corresponding to shot data to repeat a shot of a desired pattern, by the electron beam writing apparatus.
    • 公开了一种电子束写入方法,其中包括准备电子束写入数据,该电子束写入数据由写入模式数据构成,该模式数据由作为执行写入模式时的整形波束的单元的VSB镜头的数据和用作基础的CP镜头的数据表示 描述了CP电子束写入数据到电子束写入装置的CP孔径数据,CP孔径数据ID和具有用于VSB镜头的开口的CP孔的各个开口的打开位置和CP镜头的开口位置, 并且将电子束写入数据扩展为在电子束写入数据中定义的各个镜头的数据,同时在校正镜头位置的同时确定各个扩展镜头的照射时间,并且输出对应于镜头数据的控制信号以重复所需图案的镜头 ,由电子束写入装置。
    • 8. 发明申请
    • Electron beam writing method, electron beam writing apparatus and semiconductor device manufacturing method
    • 电子束写入方法,电子束写入装置和半导体器件的制造方法
    • US20060289797A1
    • 2006-12-28
    • US11409987
    • 2006-04-25
    • Ryoichi InanamiTetsuro Nakasugi
    • Ryoichi InanamiTetsuro Nakasugi
    • A61N5/00
    • H01J37/3174B82Y10/00B82Y40/00
    • An electron beam writing method is disclosed, which includes preparing electron beam writing data structured from writing pattern data expressed by both data of VSB shots which are units of shaping beams at the time of carrying out writing a pattern and data of CP shots serving as bases of a repeating pattern, and CP aperture data into which identification numbers IDs and opening positions of respective openings of a CP aperture having openings for VSB shots and openings for CP shots are described, inputting the electron beam writing data to an electron beam writing apparatus, and expanding the electron beam writing data into data of the respective shots defined in the electron beam writing data, determining irradiation times of the respective expanded shots while correcting shot positions, and outputting control signals corresponding to shot data to repeat a shot of a desired pattern, by the electron beam writing apparatus.
    • 公开了一种电子束写入方法,其中包括准备电子束写入数据,该电子束写入数据由写入模式数据构成,该模式数据由作为执行写入模式时的整形波束的单元的VSB镜头的数据和用作基础的CP镜头的数据表示 描述了CP电子束写入数据到电子束写入装置的CP孔径数据,CP孔径数据ID和具有用于VSB镜头的开口的CP孔的各个开口的打开位置和CP镜头的开口位置, 并且将电子束写入数据扩展为在电子束写入数据中定义的各个镜头的数据,同时在校正镜头位置的同时确定各个扩展镜头的照射时间,并且输出对应于镜头数据的控制信号以重复所需图案的镜头 ,由电子束写入装置。