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    • 7. 发明授权
    • Process for forming non-evaporative getter and method of producing image forming apparatus
    • 用于形成非蒸发吸气剂的方法和制备图像形成装置的方法
    • US06383050B1
    • 2002-05-07
    • US09481561
    • 2000-01-11
    • Junri IshikuraIhachiro GofukuMitsutoshi Hasegawa
    • Junri IshikuraIhachiro GofukuMitsutoshi Hasegawa
    • H01J939
    • C23C14/228C23C14/22H01J7/183H01J29/94
    • The invention provides a getter of high performance capable of immediately absorbing a gas generated in an image forming apparatus, and an image forming apparatus exhibiting little luminance variation with the lapse of time and little luminance fluctuation. It also provides a method for producing a getter at a low temperature not effecting other components and in an arbitrary position in a simple manner with a low cost, thereby being adaptable to various processes. The invention relates to a process for forming a non-evaporative getter by a gas deposition method, and to a method of producing an image forming apparatus provided with an electron source, an image forming member for forming an image by irradiation with an electron beam emitted from the electron source, and a non-evaporative getter in a container, which comprises forming the non-evaporative getter by the above-mentioned process for forming the non-evaporative getter.
    • 本发明提供了能够立即吸收在图像形成装置中产生的气体的高性能的吸气剂,以及随时间流逝和亮度波动小的亮度变化很小的图像形成装置。 本发明还提供了一种在低温下制造吸气剂的方法,其不会以简单的方式以低成本实现其它组分和任意位置,从而适应各种工艺。 本发明涉及一种通过气相沉积法形成非蒸发吸气剂的方法,以及一种制备具有电子源的图像形成装置的方法,用于通过照射电子束照射形成图像的图像形成部件 电子源和容器中的非蒸发吸气剂,其包括通过上述用于形成非蒸发吸气剂的方法形成非蒸发吸气剂。
    • 8. 发明授权
    • Semiconductor device and fabrication method thereof
    • 半导体器件及其制造方法
    • US06190911B1
    • 2001-02-20
    • US08670148
    • 1996-06-27
    • Ihachiro Gofuku
    • Ihachiro Gofuku
    • H01L21265
    • H01L29/66954H01L21/28525H01L21/31155H01L29/66272
    • A method for fabricating a semiconductor device having a wiring part connected via an opening portion formed in an insulting film on a semiconductor region to the semiconductor region. The wiring part includes a polycrystalline semiconductor layer and a metal or metal silicide on the semiconductor layer. A polycrystalline semiconductor layer is deposited over the opening portion of the semiconductor region. First and second impurities are respectively ion injected into the polycrystalline semiconductor layer, wherein the ion injecting range of the first impurities is longer than that of the second impurities, thereby forming a high concentration region at least on a surface side of the polycrystalline semiconductor layer. Following the ion injection of the first and second impurities, a heat treatment is conducted to grow crystals of the polycrystalline semiconductor layer. After the heat treatment, a metal or a metal silicide is deposited on the polycrystalline layer using a low melting point method.
    • 一种半导体器件的制造方法,其具有通过形成在半导体区域上的绝缘膜上的开口部连接到半导体区域的布线部。 布线部分包括半导体层上的多晶半导体层和金属或金属硅化物。 多晶半导体层沉积在半导体区域的开口部分上。 第一和第二杂质分别离子注入多晶半导体层,其中第一杂质的离子注入范围比第二杂质的离子注入范围长,从而至少在多晶半导体层的表面侧形成高浓度区域。 在离子注入第一和第二杂质之后,进行热处理以生长多晶半导体层的晶体。 在热处理之后,使用低熔点法在多晶层上沉积金属或金属硅化物。