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1. 发明申请

US20070284746A1 NANO-ELECTRODE-ARRAY FOR INTEGRATED CIRCUIT INTERCONNECTS 审中-公开
标题翻译：用于集成电路互连的纳米电极阵列
公开(公告)号：US20070284746A1
公开(公告)日：2007-12-13
申请号：US11742328
申请日：2007-04-30
申请人： Sergey Lopatin , Robert Fiordalice , Faivel Pintchovski , Igor Ivanov , Wen Kong , Artur Kolics
发明人： Sergey Lopatin , Robert Fiordalice , Faivel Pintchovski , Igor Ivanov , Wen Kong , Artur Kolics
IPC分类号： H01L21/82
CPC分类号： H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L21/76868 , H01L21/76874 , Y10S977/723
摘要： An integrated circuit is provided including an integrated circuit having a trench and via provided in a dielectric layer. A nano-electrode-array is over the dielectric layer in the trench and via, and a conductor is over the nano-electrode-array. The conductor and the nano-electrode-array are coplanar with a surface of the dielectric layer.
摘要翻译：提供一种集成电路，其包括具有在电介质层中设置的沟槽和通孔的集成电路。纳米电极阵列位于沟槽和通孔中的电介质层的上方，导体在纳米电极阵列的上方。导体和纳米电极阵列与电介质层的表面共面。

2. 发明授权

US07226856B1 Nano-electrode-array for integrated circuit interconnects 有权
标题翻译：用于集成电路互连的纳米电极阵列
公开(公告)号：US07226856B1
公开(公告)日：2007-06-05
申请号：US10990273
申请日：2004-11-15
申请人： Sergey D. Lopatin , Robert Fiordalice , Faivel Pintchovski , Igor Ivanov , Wen Z. Kong , Artur Kolics
发明人： Sergey D. Lopatin , Robert Fiordalice , Faivel Pintchovski , Igor Ivanov , Wen Z. Kong , Artur Kolics
IPC分类号： H01L21/4763
CPC分类号： H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L21/76868 , H01L21/76874 , Y10S977/723
摘要： An integrated circuit and a method of manufacturing an integrated circuit is provided including providing an integrated circuit having a trench and via provided in a dielectric layer. A nano-electrode-array is formed over the dielectric layer in the trench and via, and a conductor is deposited over the nano-electrode-array. The conductor and the nano-electrode-array are coplanar with a surface of the dielectric layer.
摘要翻译：提供一种集成电路和集成电路的制造方法，包括提供具有在电介质层中设置的沟槽和通孔的集成电路。纳米电极阵列形成在沟槽和通孔中的电介质层之上，导体沉积在纳米电极阵列上。导体和纳米电极阵列与电介质层的表面共面。

3. 发明授权

US06913651B2 Apparatus and method for electroless deposition of materials on semiconductor substrates 有权
公开(公告)号：US06913651B2
公开(公告)日：2005-07-05
申请号：US10103015
申请日：2002-03-22
申请人： Igor Ivanov , Jonathan Weiguo Zhang , Artur Kolics
发明人： Igor Ivanov , Jonathan Weiguo Zhang , Artur Kolics
IPC分类号： C23C18/16 , H01L21/288 , B05C5/00 , B05C11/00
CPC分类号： C23C18/1676 , C23C18/1628 , C23C18/163 , C23C18/1632 , C23C18/168 , C23C18/1682 , H01L21/288
摘要： An apparatus of the invention has a closable chamber that can be sealed and is capable of withstanding an increased pressure and high temperature. The chamber contains a substrate holder that can be rotated around a vertical axis, and an edge-grip mechanism inside the substrate holder. The deposition chamber has several inlet ports for the supply of various process liquids, such as deposition solutions, DI water for rinsing, etc., and a port for the supply of a gas under pressure. The apparatus is also provided with reservoirs and tanks for processing liquids and gases, as well as with a solution heater and a control system for controlling temperature and pressure in the chamber. The heater can be located outside the working chamber or built into the substrate holder, or both heaters can be used simultaneously. Uniform deposition is achieved by carrying out the deposition process under pressure and under temperature slightly below the boiling point of the solution. The solution can be supplied from above via a shower head formed in the cover, or through the bottom of the chamber. Rinsing or other auxiliary solutions are supplied via a radially moveable chemical dispensing arm that can be arranged above the substrate parallel thereto.

4. 发明授权

US06902605B2 Activation-free electroless solution for deposition of cobalt and method for deposition of cobalt capping/passivation layer on copper 有权
标题翻译：用于沉积钴的无活化无电解液和用于在铜上沉积钴覆盖/钝化层的方法
公开(公告)号：US06902605B2
公开(公告)日：2005-06-07
申请号：US10379692
申请日：2003-03-06
申请人： Artur Kolics , Nicolai Petrov , Chiu Ting , Igor Ivanov
发明人： Artur Kolics , Nicolai Petrov , Chiu Ting , Igor Ivanov
IPC分类号： C23C18/36 , C23C18/50 , C23C18/34 , B05D1/18
CPC分类号： H01L21/288 , C23C18/36 , C23C18/50 , H01L21/76849
摘要： The present invention relates to compositions and a method for electroless formation of alkaline-metal-free coatings on the basis of cobalt and composition of cobalt with tungsten and phosphorus, which have high resistance to oxidation and stability of electrical characteristics, when the Co—Cu system layer is used in IC chips. The composition of the electroless solution contains more than one reducing agents, one of which can catalyze the initial electroless deposition layer of cobalt on copper (called initiator), while the other maintains deposition of cobalt on the aforementioned initial layer as the process is continued. Small amount (100-5000 ppm) of elements from the initiator also builds into the electroless film, which is expected to further improve the barrier properties of the resultant film compared to the deposition bath without initiator. Such coating may find application in semiconductor manufacturing where properties of deposited films and controllability of the composition and physical and chemical characteristics of the deposited films may be critically important.
摘要翻译：本发明涉及组合物和无碱形成无碱金属的涂层的方法，其中钴和钴与钨和磷的组成具有很高的耐氧化性和电特性的稳定性，当Co-Cu 系统层用于IC芯片。无电溶液的组成包含多于一种还原剂，其中之一可以催化铜上的钴的初始无电沉积层（称为引发剂），而另一种还原剂继续在上述初始层上沉积钴。来自引发剂的少量（100-5000ppm）元素也构成化学镀膜，预期与无引发剂的沉积浴相比，可以进一步提高所得膜的阻隔性能。这种涂层可以应用于半导体制造中，其中沉积膜的性质和组成的可控性以及沉积膜的物理和化学特性可能是至关重要的。

5. 发明申请

US20050221015A1 Apparatus and method for electroless deposition of materials on semiconductor substrates 有权
标题翻译：在半导体衬底上无电沉积材料的装置和方法
公开(公告)号：US20050221015A1
公开(公告)日：2005-10-06
申请号：US11138531
申请日：2005-05-26
申请人： Igor Ivanov , Jonathan Zhang , Artur Kolics
发明人： Igor Ivanov , Jonathan Zhang , Artur Kolics
IPC分类号： C23C18/16 , H01L21/288 , C25D3/56
CPC分类号： C23C18/1676 , C23C18/1628 , C23C18/163 , C23C18/1632 , C23C18/168 , C23C18/1682 , H01L21/288
摘要： An apparatus of the invention has a closable chamber that can be sealed and is capable of withstanding an increased pressure and high temperature. The chamber contains a substrate holder that can be rotated around a vertical axis, and an edge-grip mechanism inside the substrate holder. The deposition chamber has several inlet ports for the supply of various process liquids, such as deposition solutions, DI water for rinsing, etc., and a port for the supply of a gas under pressure. The apparatus is also provided with reservoirs and tanks for processing liquids and gases, as well as with a solution heater and a control system for controlling temperature and pressure in the chamber. The heater can be located outside the working chamber or built into the substrate holder, or both heaters can be used simultaneously. Uniform deposition is achieved by carrying out the deposition process under pressure and under temperature slightly below the boiling point of the solution. The solution can be supplied from above via a shower head formed in the cover, or through the bottom of the chamber. Rinsing or other auxiliary solutions are supplied via a radially moveable chemical dispensing arm that can be arranged above the substrate parallel thereto.
摘要翻译：本发明的装置具有一个能够被密封并能承受增加的压力和高温的封闭室。所述腔室包含能够围绕垂直轴线旋转的衬底保持器，以及衬底保持器内部的边缘抓握机构。沉积室具有用于供应各种处理液体的多个入口端口，例如沉积溶液，用于冲洗的去离子水等，以及用于在压力下供应气体的端口。该设备还设置有用于处理液体和气体的储存器和罐，以及用于控制室中的温度和压力的溶液加热器和控制系统。加热器可以位于工作室外部或内置于基板支架中，也可以同时使用两个加热器。通过在压力下和稍低于溶液沸点的温度下进行沉积工艺来实现均匀沉积。该解决方案可以从上面通过形成在盖中的淋浴喷头或者通过室的底部供应。冲洗或其它辅助溶液经由可平行于其上的衬底上方的可径向移动的化学分配臂供应。

6. 发明授权

US07780772B2 Electroless deposition chemical system limiting strongly adsorbed species 有权
标题翻译：化学沉积化学系统限制强吸附物种
公开(公告)号：US07780772B2
公开(公告)日：2010-08-24
申请号：US11563199
申请日：2006-11-25
申请人： Artur Kolics , Igor Ivanov
发明人： Artur Kolics , Igor Ivanov
IPC分类号： C23C18/31 , C23C18/34 , C23C18/40 , C23C18/44
CPC分类号： C23C18/42 , C23C18/31 , C23C18/32 , C23C18/38
摘要： An electroless deposition chemical system includes an electroless solution including a metal component, and a strongly adsorbed species component having a concentration less than a concentration of the metal component.
摘要翻译：无电沉积化学系统包括含有金属组分的无电溶液和浓度小于金属组分浓度的强吸附物质组分。

7. 发明申请

US20090288594A1 ELECTROLESS DEPOSITION CHEMICAL SYSTEM LIMITING STRONGLY ADSORBED SPECIES 有权
标题翻译：电沉积化学系统限制强烈吸附的物种
公开(公告)号：US20090288594A1
公开(公告)日：2009-11-26
申请号：US11563199
申请日：2006-11-25
申请人： Artur Kolics , Igor Ivanov
发明人： Artur Kolics , Igor Ivanov
IPC分类号： B05C3/02 , C09D5/00
CPC分类号： C23C18/42 , C23C18/31 , C23C18/32 , C23C18/38
摘要： An electroless deposition chemical system includes an electroless solution including a metal component, and a strongly adsorbed species component having a concentration less than a concentration of the metal component.
摘要翻译：无电沉积化学系统包括含有金属组分的无电溶液和浓度小于金属组分浓度的强吸附物质组分。

8. 发明授权

US09058975B2 Cleaning solution formulations for substrates 有权
标题翻译：基材清洗剂配方
公开(公告)号：US09058975B2
公开(公告)日：2015-06-16
申请号：US12205896
申请日：2008-09-07
申请人： Artur Kolics , Fritz Redeker
发明人： Artur Kolics , Fritz Redeker
IPC分类号： C09K13/04 , C11D7/32 , H01L21/02 , C09K13/00 , C11D7/16 , C11D7/26 , C11D7/34 , C11D11/00
CPC分类号： H01L21/02057 , C09K13/00 , C11D3/0073 , C11D3/0084 , C11D7/16 , C11D7/261 , C11D7/3281 , C11D7/34 , C11D11/0047
摘要： Presented is a cleaning solution according to one embodiment of the present invention that includes a corrosion inhibitor, a solubilizing agent, an oxygen scavenger, and a complexing agent also capable as a pH adjustor. Another embodiment of the present invention includes cleaning solutions that include a pH adjustor, an optional complexing agent, and a corrosion inhibitor. The cleaning solutions may have a solubilizing agent optionally present, may have a surfactant optionally present, and may have a dielectric etchant optionally present.
摘要翻译：提出了根据本发明的一个实施方案的清洁溶液，其包括腐蚀抑制剂，增溶剂，除氧剂和还可以作为pH调节剂的络合剂。本发明的另一个实施方案包括包括pH调节剂，任选的络合剂和腐蚀抑制剂的清洁溶液。清洁溶液可以具有任选存在的增溶剂，可以具有任选存在的表面活性剂，并且可以具有任选存在的电介质蚀刻剂。

9. 发明授权

US08895441B2 Methods and materials for anchoring gapfill metals 有权
标题翻译：锚定缝隙金属的方法和材料
公开(公告)号：US08895441B2
公开(公告)日：2014-11-25
申请号：US13404274
申请日：2012-02-24
申请人： Artur Kolics
发明人： Artur Kolics
IPC分类号： B32B15/04 , B32B3/30
CPC分类号： C23C18/1882 , B32B3/30 , B32B15/04 , C23C18/52 , H01L21/76831 , H01L21/76879 , Y10T428/12361 , Y10T428/12389 , Y10T428/24917
摘要： One aspect of the present invention includes a method of fabricating an electronic device. According to one embodiment, the method comprises providing a substrate having dielectric oxide surface areas adjacent to electrically conductive surface areas, chemically bonding an anchor compound with the dielectric oxide surface areas so as to form an anchor layer, initiating the growth of a metal using the electrically conductive surface areas and growing the metal so that the anchor layer also bonds with the metal. The anchor compound has at least one functional group capable of forming a chemical bond with the oxide surface and has at least one functional group capable of forming a chemical bond with the metal. Another aspect of the present invention is an electronic device. A third aspect of the present invention is a solution comprising the anchor compound.
摘要翻译：本发明的一个方面包括制造电子设备的方法。根据一个实施例，所述方法包括提供具有与导电表面区域相邻的电介质氧化物表面区域的基板，将锚固化合物与电介质氧化物表面区域化学结合，以形成锚定层，从而使用导电表面积并使金属生长，使得锚定层也与金属结合。锚化合物具有至少一个能够与氧化物表面形成化学键的官能团，并且具有至少一个能够与金属形成化学键的官能团。本发明的另一方面是电子设备。本发明的第三方面是包含锚化合物的溶液。

10. 发明授权

US08328919B2 Electroless deposition solutions and process control 失效
标题翻译：无电沉积解决方案和工艺控制
公开(公告)号：US08328919B2
公开(公告)日：2012-12-11
申请号：US12731115
申请日：2010-03-24
申请人： Artur Kolics
发明人： Artur Kolics
IPC分类号： C23C18/34 , C23C18/36 , C23C18/40 , C23C18/44
CPC分类号： H01L21/02697 , C09D5/24 , C23C18/1601 , C23C18/1617 , C23C18/34 , C23C18/50 , H01L21/288 , H01L21/76849 , H05K3/244
摘要： One embodiment of the present invention is a method of electroless deposition of cap layers for fabricating an integrated circuit. The method includes controlling the composition of an electroless deposition bath so as to substantially maintain the electroless deposition properties of the bath. Other embodiments of the present invention include electroless deposition solutions. Still another embodiment of the present invention is a composition used to recondition an electroless deposition bath.
摘要翻译：本发明的一个实施例是用于制造集成电路的盖层的无电沉积方法。该方法包括控制无电沉积浴的组成，以便基本保持浴的无电沉积性能。本发明的其它实施方案包括无电沉积溶液。本发明的另一个实施方案是用于重新形成无电沉积浴的组合物。

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